• Journal of Convergence for Information Technology
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• v.8 no.5
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• pp.95-100
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• 2018

The metal oxide/graphene nanocomposites are promising functional materials for high capacitive electrode material of secondary batteries, and high sensitive material of high performance gas sensors. In this study, vanadium dioxide($VO_2$) nanostructrures were grown on CVD graphene which was synthesized on Cu foil by thermal CVD, and exfoliated graphene which was exfoliated from highly oriented pyrolytic graphite(HOPG) using a vapor transport method. As results, $VO_2$ nanostructures on CVD graphene were grown preferential growth on abundant functional groups of graphene grain boundaries. The functional groups are served to nucleation site of $VO_2$ nanostructures. On the other hand, 2D & 3D $VO_2$ nanostructures were grown on exfoliated graphene due to uniformly distributed functional groups on exfoliated graphene surface. The characteristics of morphology controlled growth of $VO_2$/graphene nanocomposites would be applied to fabrication process for high capacitive electrode materials of secondary batteries, and high sensitive materials of gas sensors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.262-262
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• 2010

To investigate the effect of the amount of hydrogen on CVD grown-graphene, the flow rate of hydrogen was changed, while other process parameters were kept constant during CVD synthesis. Substrate which consists of 300nm-nickel/$SiO_2$/Si substrate, and methane gas mixed with hydrogen and argon were used for CVD growth. Graphene was synthesized at $950^{\circ}C$. The thickness and the defect of graphene were analyzed using raman spectroscopy. The synthesized graphene shows non-uniform and more defective below a certain amount of hydrogen.

• Journal of the Korean Ceramic Society
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• v.56 no.5
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• pp.506-512
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• 2019

Although graphene has been successfully grown in large scale via chemical vapor deposition (CVD), it is still questionable whether the mechanical properties of CVD graphene are equivalent to those of exfoliated graphene. In addition, there has been an issue regarding how the tilt angle of the grain boundary (GB) affects the strength of graphene. We investigate the mechanical properties of CVD graphene with nanoindentation from atomic force microscopy and transmission electron microscopy. Surprisingly, the samples with GB angles of 10° and 26° yielded similar fracture stresses of ~ 80 and ~ 79 GPa, respectively. Even for samples with GB exhibiting a wider range, from 0° to 30°, only a slightly wider fracture stress range (~ 50 to ~ 90 GPa) was measured, regardless of tilt angle. The results are contrary to previous studies that have reported that GBs with a larger tilt angle yield stronger graphene film. Such a lack of angle dependence of GB can be attributed to irregular and well-stitched GB structures.

• Composites Research
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• v.36 no.5
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• pp.342-348
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• 2023

There has been increasing demand for real-time monitoring of body and ambient temperatures using wearable devices. Graphene-based thermistors have been developed for high-performance flexible temperature sensors. In this study, the temperature coefficient of resistance (TCR) of monolayer graphene was controlled by coating polyethylenimine (PEI) on graphene surfaces to enhance its temperature-sensing performances. Monolayer graphene grown by chemical vapor deposition (CVD) was wet-transferred onto a target substrate. To facilitate the interfacial doping by PEI, the hydrophobic graphene surface was altered to be hydrophilic by oxygen plasma treatments while minimizing defect generation. The effect of PEI doping on graphene was confirmed using a back-gated field-effect transistor (FET). The CVD-grown monolayer graphene coated with PEI exhibited an improved TCR of -0.49(±0.03) %/K in a temperature range of 30~50℃.

• Composites Research
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• v.36 no.5
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• pp.377-382
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• 2023

To enhance the performance of graphene-based devices, it is of great importance to better understand the interfacial interaction of graphene with its underlying substrates. In this study, the adhesion energy of monolayer graphene placed on dielectric substrates was characterized using mode I fracture tests. Large-area monolayer graphene was synthesized on copper foil using chemical vapor deposition (CVD) with methane and hydrogen. The synthesized graphene was placed on target dielectric substrates using polymer-assisted wet transfer technique. The monolayer graphene placed on a substrate was mechanically delaminated from the dielectric substrate by mode I fracture tests using double cantilever beam configuration. The obtained force-displacement curves were analyzed to estimate the adhesion energies, showing 1.13 ± 0.12 J/m² for silicon dioxide and 2.90 ± 0.08 J/m² for silicon nitride. This work provides the quantitative measurement of the interfacial interactions of CVD-grown graphene with dielectric substrates.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.248-248
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• 2012

Synthesis graphene on Cu substrate by plasma-enhanced chemical vapor deposition (PE-CVD) is investigated and its quality's affection factors are discussed in this work. Compared with the graphene synthesized at high temperature in chemical vapor deposition (CVD), the low-temperature graphene film by PE-CVD has relatively low quality with many defects. However, the advantage of low-temperature is also obvious that low melting point materials will be available to synthesize graphene as substrate. In this study, the temperature will be kept constant in $400^{\circ}C$ and the graphene was grown in plasma environment with changing the plasma power, the flow rate of precursors, and the distance between plasma generator coil and substrates. Then, we investigate the effect of temperature and the influence of process variables to graphene film's quality and characterize the film properties with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.659-659
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• 2013

Recently, graphene has been intensively studied due to the fascinating physical, chemical and electrical properties. It shows high carrier mobility, high current density, and high thermal conductivity compare with conventional semiconductor materials even it has single atomic thickness. Especially, since graphene has fantastic electrical properties many researchers are believed that graphene will be replacing Si based technology. In order to realize it, we need to prepare the large and uniform graphene. Chemical vapor deposition (CVD) method is the most promising technique for synthesizing large and uniform graphene. Unfortunately, CVD method requires transfer process from metal catalyst. In transfer process, supporting polymer film (Such as poly (methyl methacrylate)) is widely used for protecting graphene. After transfer process, polymer layer is removed by organic solvents. However, it is impossible to remove it completely. These organic residues on graphene surface induce quality degradation of graphene since it disturbs movement of electrons. Thus, in order to get an intrinsic property of graphene completely remove of the organic residues is the most important. Here, we introduce modified wet graphene transfer method without PMMA. First of all, we grow the graphene from Cu foil using CVD method. And then, we deposited several metal films on graphene for transfer layer instead of PMMA. Finally, we fabricate graphene FET devices. Our approaches show low defect density and non-organic residues in comparison with PMMA coated graphene through Raman spectroscopy, SEM and AFM. In addition, clean graphene FET shows intrinsic electrical characteristic and high carrier mobility.

• Journal of Sensor Science and Technology
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• v.25 no.4
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• pp.275-279
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• 2016

Chemical vapor deposited (CVD) polycrystalline graphene is widely used for various sensor application because of its extremely large surface-to-volume ratio. The electrical properties of CVD-graphene is significantly affected by the grain size and boundaries (GGBs), but evaluation of GGB of continuous monolayer graphene is difficult. Although several evaluation methods such as tunneling electron microscopy, confocal Raman, UV/ozone-oxidation are typically used, they still have issues in evaluation efficiency and accuracy. In this paper, we suggest an improved evaluation method for precise and simple GGB evaluation which is based on UV/ozone-oxidation and chemical etching process. Using this method, we could observe clear GGBs of CVD-graphene layers grown by different process conditions and statistically evaluate average grain sizes varying from $1.69{\sim}4.43{\mu}m$. This evaluation method can be used for analyzing the correlation between the electrical properties and grain size of CVD-graphene, which is essential for the development of graphene-based sensor devices.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.16.2-16.2
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• 2011

Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.