• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.339-342
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• 1998

Ferroelectric L $a_2$ $Ti_2$ $O_{7}$(LTO) thin films were prepared by chemical solution deposition processes. Acetylacetone was used as chelating agent and nitric acid was added in the stock solution to control hydrolysis and condensation reaction rate. The LTO thin films were spin-coated on Pt/Ti/ $SiO_2$/(100)Si and Pt/Zr $O_2$/ $SiO_2$/(100)Si substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. The role of acetylacetone in Ti iso-propoxide stabilization by possibly substituting $O^{i}$Pr ligand was studied by H-NMR. B site-rich impurity phase, i.e. L $a_4$ $Ti_{9}$ $O_{24}$, was found after annealing, where its appearance was dependent on process temperature indicating the possible reaction with substrate. Dielectric and other relevant electrical properties were measured and the results were compared between modified sol-gel and MOD processes.s.s.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.245-245
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• 2011

$BiFeO_3$ (BFO)박막에 전위금속 Pb와 Co를 각각 치환환 박막을 chemical solution deposition 방법으로 Pt/Ti/SiO2/Si(100) 기판위에 증착하였다. Bi 자리에 Pb와 Co를 20 at.% 치환하였으며, 치환된 $Bi_{0.8}Pb_{0.2}FeO_3$ (BPFO), $Bi_{0.8}Co_{0.2}FeO_3$ (BCFO) 박막의 구조적, 자기적 특성 변화를 BFO 박막과 비교하여 조사하였다. XRD 패턴을 분석한 결과 BPFO, BCFO 박막들은 모두 rhombohedrally distorted perovskite 구조였으며 불순물인 pyrochlore 상이 약하게 관측되었다. 치환이 이루어진 BPFO, BCFO 박막들의 자기 이력곡선은 안정된 포화곡선을 나타냈으며 BFO의 포화값(5 emu/$cm^3$)에 비해 크게 증가된 55 emu/$cm^3$, 35 emu/$cm^3$의 값을 나타냈다. 또한 보자력장(coercive field, Hc)값도 BFO의 500 Oe보다 크게 증가된 1,200 Oe, 800 Oe의 값을 보였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권3호
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• pp.132-138
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• 2003

We investigated the polarization retention characteristics of ferroelectric capacitors with $Pb(Zr,Ti)O_3$ (PZT) thin films which were fabricated by different deposition methods. In thermally-accelerated retention tests, PZT films which were prepared by a chemical solution deposition (CSD) method showed rapid decay of retained polarization charges as the thickness of the films decreased down to 100 nm, while the films which were grown by metal organic chemical vapor deposition (MOCVD) retained relatively large non-volatile charges at the corresponding thickness. We concluded that in the CSD-grown films, the thicker interfacial passive layer compared with the MOCVD-grown films had an unfavorable effect on retention behavior. We observed the existence of such interfacial layers by extrapolation of the total capacitance with thickness of the films and the capacitance of these layers was larger in MOCVD-grown films than in CSD-grown films. Due to incomplete compensation of surface polarization charges by the free charges in the metal electrodes, the interfacial field activated the space charges inside the interfacial layers and deposited them at the boundary between the ferroelectric layer and the interfacial layer. Such space charges built up an internal field inside the films, which interfered with domain wall motion, so that retention property at last became degraded. We observed less imprint which was a result of less internal field in MOCVD-grown films while large imprint was observed in CSD-grown films.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.591-596
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• 2006

Lead zirconate titanate(PZT) thin films have been attracting worldwide interests in exploring their potential properties [1-3] or the origins [4-6] of their excellent dielectic, ferroelectric and piezoelectric properties near the morphotropic phase boundary (MPB). PZT thin films are expected to apply to the memory devices, micro electro mechanical systems (MEMS), and display because of their superior ferroelectric, pyroelectric, piezoelectric and electron emission properties. In this study, high- performance piezoelectric PZT thin films for actuated mirror array and optical scanner were developed by controlling the several factors, such as molecular-designed precursor, seeding layer and the residual stress in films, by a chemical solution deposition (CSD).

• 한국진공학회지
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• 제19권1호
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• pp.52-57
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• 2010

$BiFeO_3(BFO)/Pb(Zr_{0.52}Ti_{0.48})O_3$(PZT) bilayer와 multilayer의 다층구조를 만들어 전기적 특성을 측정하여 같은 두께의 BFO 단층박막과 비교해 보았다. BFO와 PZT 용액을 이용하였으며 chemical solution deposition 방법으로 Pt/Ti/$SiO_2$/Si(100) 기판위에 각 박막을 증착하였다. X-ray diffraction 분석을 통해 모든 박막이 다배향(multi-orientation) 페로브스카이트 (perovskite) 구조를 가졌음을 확인하였다. BFO/PZT Bilayer와 multilayer 박막들은 BFO 단층박막의 비해 누설전류 값이 500 kV/cm에서 약 4, 5차수 정도 감소했으며, 이로 인해 BFO/PZT 다층박막의 강유전체 특성이 크게 향상되었다. BFO/PZT multilayer 다층구조 박막의 경우 안정된 이력곡선(hysteresis loop)을 나타냈으며, 잔류 분극(remanent polarization)의 값은 $44.3{\mu}C/cm^2$이었으며, 항전계($2E_c$) 값은 681.4 kV/cm였다.

• Transactions on Electrical and Electronic Materials
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• 제13권5호
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• pp.241-244
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• 2012

Antimony doped tin oxide (ATO) thin films on glass substrate were prepared by the chemical solution deposition (CSD) method, using sol-gel solution synthesized by non-alkoxide precursors and the sol-gel route. The crystallinity and electrical properties of ATO thin films were investigated as a function of the annealing condition (both annealing environments and temperatures), and antimony (Sb) doping concentration. Electrical resistivity, carrier concentration, Hall mobility and optical transmittance of ATO thin films were improved by Sb doping up to 5~8 mol% and annealing in a low vacuum atmosphere, compared to the undoped tin oxide counterpart. 5 mol% Sb doped ATO film annealed at $550^{\circ}C$ in a low vacuum atmosphere showed the highest electrical properties, with electrical resistivity of about $8{\sim}10{\times}10^{-3}{\Omega}{\cdot}cm$, and optical transmittance of ~85% in the visible range. Our research demonstrates the feasibility of low-cost solution-processed transparent conductive oxide thin films, by controlling the appropriate doping concentration and annealing conditions.

• 한국초전도ㆍ저온공학회논문지
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• 제10권2호
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• pp.20-23
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• 2008

[ $La_2Zr_2O_7$] (LZO) buffer layers were deposited on biaxially textured Ni-W substrates by chemical solution deposition method (CSD). In this study, the effect of $B_2O_3$ addition on texture and surface roughness of LZO films was investigated. The alkoxide-based precursor solution was employed to synthesize the precursor solution of LZO and the solution was coated on biaxially textured Ni-W substrates and subsequently annealed at $900^{\circ}C$ for crystallization. The pure LZO film without $B_2O_3$ addition showed a (222) reflection in the X-ray diffraction (XRD) profile. The intensity of (222) reflection was enhanced and more rough surface was obtained after further repetition of coating. Contrary to this, the LZO film prepared by $B_2O_3$ added precursor solution shows well-developed (400) reflection peak in the XRD profile and excellent biaxial texture (${\Delta}{\theta}=4.3^{\circ}$, ${\Delta}{\phi}=6.8^{\circ}$). The surface roughness of LZO films were also improved by addition of $B_2O_3$ even after multicoating ($R_{rms}{\sim}3.1nm$). It was shown that the LZO film with smooth surface and biaxial texture was grown on the biaxially textured Ni-W substrates with addition of $B_2O_3$ in the precursor solution.