• Journal of the Korean Mathematical Society
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• v.37 no.2
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• pp.245-251
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• 2000

Assume that two boundaries of worm domains, which are parpametrizd by harmonic functions, are CR equivalent. Then we determine the Taylor expansion of CR equivalence mapping and get a relation of harmonic functions.

• Journal of the Korean Mathematical Society
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• v.40 no.4
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• pp.629-639
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• 2003

We give results describing behavior of regions of holomorphic extension of CR functions near boundary points of their domain of definition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.14-14
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• 2009

In this study, we investigated the effects of Cr dopant on the bulk trap level and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) using dielectric functions such as $Z^*$, $Y^*$, $M^*$, ${\varepsilon}^*$, and $tan{\delta}$. More than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states could be identified in ZBCr($ZnO-Bi_2O_3-Cr_2O_3$). The grain boundaries of ZBCr could be electrochemically divided into two types: sensitive to ambient oxygen and thus electrically active one and oxygen-insensitive and thus electrically inactive one.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.949-955
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• 2009

In this study, we investigated the effects of Cr dopant (1.0 at% $Cr_2O_3$ sintered at $1000^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and interface state levels of ZnO using dielectric functions ($Z^*$, $M^*$, $Y^*$, $\varepsilon^*$, and $tan{\delta}$), admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). For the identification of the bulk trap levels, we examine the zero-biased admittance spectroscopy and dielectric functions as a function of frequency and temperature. Impedance and electric modulus spectroscopy is a powerful technique to characterize grain boundaries of electronic ceramic materials as well. As a result, three kinds of bulk defect trap levels were found below the conduction band edge of ZnO in 1.0 at% Cr-doped ZnO (Cr-ZnO) as 0.11 eV, 0.21 eV, and 0.31 eV. The overlapped defect levels ($Zn^{..}_i$ and $V^{\cdot}_0$) in admittance spectra were successfully separated by the combination of dielectric function such as $M^*$, $\varepsilon^*$, and $tan{\delta}$. In Cr-ZnO, the interfacial state level was about 1.17 eV by IS and MS. Also we measured the resistance ($R_{gb}$) and capacitance ($C_{gb}$) of grain boundaries with temperature using impedance-modulus spectroscopy. It have discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z"-logf plots with temperature.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.2 s.58
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• pp.38-49
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• 2006

In order to increase the spectrum efficiency, recently, there is the number of studies for CR technology. For instance, IEEE 802.22 WRAN(Wireless Regional Area Network) WG considered the CR technology as a solution of WRAN system to serve the high speed internet service(1.5 Mbps down stream and 384 kbps up stream) in 100 km overall coverage and 54 MHz-746 MHz band. Basically, in MAC point of view, the WRAN system have been standardizing based on the IEEE 802.16 MAC layer features such as Data transmission method, QoS provision and Bandwidth request schemes. Additionally, the WRAN system further include CR nature functions such as incumbent user protection, self coexistence which would be importantly considered. Also, the inherent WRAN functions are added such as channel bonding and fractional bandwidth usage. This paper mainly explained frame structure, IU protection, self coexistence which are key functions of WRAN system. Finally, in this paper, we expressed a prospect of IEEE 802.22 WRAN standardization.

• Journal of the Korean Mathematical Society
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• v.40 no.4
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• pp.695-708
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• 2003

We study the existence of solutions for overdetermined PDE systems that admit prolongation to a complete system. We reduce the problem to a Pfaffian system on a submanifold of the jet space of unknown functions and then express the integrability conditions in terms of the coefficients of the original system. As possible applications we present some local problems in CR geometry: determining the CR embeddibility into spheres and the existence of infinitesimal CR automorphisms.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.368-373
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• 2010

In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.

• Proceedings of the KIEE Conference
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• 2006.11a
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• pp.198-200
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• 2006

This paper presents a development of an educational simulator of particle swarm optimization (PSO) and application for solving the test functions and economic dispatch (ED) problems with nonsmooth cost functions. A particle swarm optimization is one of the most powerful methods for solving global optimization problems. It is a population-based search algorithm and searches in parallel using a group of particles similar to other AI-based heuristic optimization techniques. In developed simulator, lecturers and students can select the functions for simulation and set the parameters that have an influence on PSO performance. To improve searching capability for ED problems, a crossover operation is proposed to the position update of each individual (CR-PSO). To verify the feasibility of CR-PSO method, numerical studies have been performed for two different sample systems. The proposed CR-PSO method outperforms other algorithms in solving ED problems.

• Research in Community and Public Health Nursing
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• v.24 no.4
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• pp.427-437
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• 2013

Purpose: This study was conducted to test effects of a cognition activation program on ADL, cognitive functions, depression, and QOL in the institutionalized elderly. Methods: The subjects were 40 elders who were admitted to a nursing home, with 20 of them in the experimental group and the other 20 in the control group. Data were collected from September 1 to December 17, 2012. The experimental group participated in a 12 week intervention program. ADL, cognitive functions, depression, and QOL were measured before and after the intervention. Data were analyzed by t-test and regression analysis of the SPSS and AMOS programs. Results: ADL (t=2.468, p=.017), depression (t=-2.625, p=012), and QOL (t=2.428, p=.020) were more significantly improved in the experimental group than in the control group, but there were no statistical differences in cognitive function between the two groups. Cognitive functions had positive effects on ADL (CR=-2.263, p=.024) and depression affected QOL (CR=-7.248, p<.001). Conclusion: The intervention program had positive effects on ADL, depression, and QOL except cognition. Cognitive functions of elders dramatically decrease after age 85, and it takes too much time to improve it. Therefore the program for the improvement of cognitive functions should be provided as early as possible.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.16-16
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• 2009

ZnO($Zn_{1+x}O$)는 n-type 반도성 세라믹스로 우수한 전기적, 광학적, 화학적 특성을 갖고 있어 바리스터, 투명 전도막, 화학 및 바이오 센서, UV light emitter 등 다양한 용도로 사용되고 있다. 또한 ZnO에 각종 천이 금속 산화물을 일정량 첨가함에 따라 발생하는 결함준위와 입계 특성의 변화에 대한 연구가 활발히 진행되고 있다. 다양한 천이 금속 산화물의 첨가에 따른 전기적 광학적 특성의 변화에 대한 결과들이 많이 보고되고 있지만 서로 상충되거나 해석상 다소 어려운 것으로 알려져 있다. 따라서 본 연구에서는 ZnO에 $Cr_2O_3$를 2.0 at% 첨가하여 Cr 첨가에 따른 ZnO의 결함준위와 입계 특성 변화에 대하여 각종 유전함수($Z^*$, $Y^*$, $M^*$, $\varepsilon^*$, and $tan{\delta}$)를 이용하여 고찰하였다 ZnO에 Cr을 첨가할 경우 결함 중 장범위 쿨롱 인력에 의한 결함(0.13~0.18 eV)이 ~100K 영역에서 나타났으며, ZnO 내 결함 중 대표적인 $Zn_j$와 $V_o$는 서로 겹쳐서 나타났다. 이들 중첩된 결함에 대하여 각종 유전함수를 이용할 경우 서로 분리해 낼 수 있는 강점이 있음을 논하였다. 또한 각 결함준위가 강는 정전용랑(C)과 저항(R)을 impedance-modulus spectroscopy를 이용하여 구한 결과, 소결온도가 높아질수록 정전용량은 증가하였으며, 측정온도가 놓아질수록 높아지는 경향을 나타내었다. 입계의 정전용량은 소결온도가 높아질수록 높아 지지만 측정온도가 높아질수록 낮아지는 경향을 나타내었다. 각 저항값은 소결온도 및 측정온도가 높아질수록 지수적으로 감소하였다. 또한 분포함수를 이용하여 입계 안정성에 대하여 고찰하였다.