• Animal Bioscience
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• v.35 no.6
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• pp.791-803
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• 2022

Genome/gene-editing (GE) techniques, characterized by a low technological barrier, high efficiency, and broad application among organisms, are now being employed not only in medical science but also in agriculture/veterinary science. Different engineered CRISPR/Cas9s have been identified to expand the application of this technology. In pig production, GE is a precise new breeding technology (NBT), and promising outcomes in improving economic traits, such as growth, lean or healthy meat production, animal welfare, and disease resistance, have already been documented and reviewed. These promising achievements in porcine gene editing, including the Myostatin gene knockout (KO) in indigenous breeds to improve lean meat production, the uncoupling protein 1 (UCP1) gene knock-in to enhance piglet thermogenesis and survival under cold stress, the generation of GGTA1 and CMP-N-glycolylneuraminic acid hydroxylase (CMAH) gene double KO (dKO) pigs to produce healthy red meat, and the KO or deletion of exon 7 of the CD163 gene to confer resistance to porcine reproductive and respiratory syndrome virus infection, are described in the present article. Other related approaches for such purposes are also discussed. The current trend of global regulations or legislation for GE organisms is that they are exempted from classification as genetically modified organisms (GMOs) if no exogenes are integrated into the genome, according to product-based and not process-based methods. Moreover, an updated case study in the EU showed that current GMO legislation is not fit for purpose in term of NBTs, which contribute to the objectives of the EU's Green Deal and biodiversity strategies and even meet the United Nations' sustainable development goals for a more resilient and sustainable agri-food system. The GE pigs generated via NBT will be exempted from classification as GMOs, and their global valorization and commercialization can be foreseen.

• Explosives and Blasting
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• v.28 no.1
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• pp.71-75
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• 2010

A plan of construction of subsea tunnels connecting Korea-Japan and Korea-China have been discussing over the past several ten years. This paper were wrote about the present capacity of our engineer, the cooperation plan of politics and economy. Especially we examined and studied resolution method and technical problem in the construction of Sub-sea tunnel. In terms of excavation technology, Blasting and water resistance technology should be cared considering the status of rock such as fault in the deep sea. After of a construction work, it should be carefully designed and constructed for the fire and leakage management in Tunnel, It should be applied to High Construction Management Professional and Value Management(CVS) etc.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.402-409
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• 2013

An innovative application of voltage-contrast (VC) inspection allowed inline detection of NMOS leakage in dense SRAM cells is presented. Cell sizes of SRAM are continual to do the shrinkage with bit density promotion as semiconductor technology advanced, but the resulting challenges include not only development of smaller-scale devices, but also intra-devices isolation. The NMOS leakage caused by the underneath n+/P-well shorted to the adjacent PMOS/N-well was inspected by the proposed electron-beam (e-beam) scan in which VC images were compared during the in-line process step of post contact tungsten (W) CMP (Chemical Mechanical Planarization) instead of end-of-line electrical test, which has a long response time. A series of experiments based on the mechanism for improving the intra-well isolation was performed and verified by the inline VC inspection. An optimal process-integration condition involved to the tradeoff between the implant dosage and photo CD was carried out.

• Biotechnology and Bioprocess Engineering:BBE
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• v.6 no.1
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• pp.37-41
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• 2001

HPLC separation of ionic samples tends to be more complicated and difficult to understand than that of non-ionic compounds. On the other hand, band spacing is much more easily manipulated for ionic than for neutral samples. Ion-suppression RP-HPLC method was used with organic modifier and aqueous buffer solution. In this work, five mononucleotides of cytidine-5-monophosphate (5-CMP) disodium salt, uridine-5-monophosphate disodium salt (5-UMP), guanosine-5-monophosphate disodium salt (5-GMP), inosine-5-monophosphate disodium salt (5-IMP), and adenosine-5-monophosphate disodium salt (5-AMP) were examined. Acetic acid and sodium phosphate were used as buffers, and methanol as an organic modifier. A new relationship between the retention factor and the buffer concentration at a fixed modifier content (5% of methanol) could be expressed by following: K = (k(sub)-1 + k(sub)0 (k(sub)B/k(sub)S)/(1 + (k(sub)B/k(sub)S) C(sub)B(sup)a), where C(sub)B was the concentration of buffer. Using this relationship, the calculated values closely matched the experimental data. The derived relationship showed that as the buffer concentration increased, the retention factor approached a certain value, and this was buffer dependent.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.309-317
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• 2000

Langasite is a promising new piezoelectric material for SAW filter application. Little was known until recently about the methods needed to mechanically polish and chemically polish/etch this material. In this experiment, polishing, slurry chemistry and chemical wet etching for langasite is described. Conventional quartz and LN ($LiNbO_3$) polishing methods did not produce satisfactory polished surfaces, and polishing with a colloidal silica slurries has shown to be most effective. The optimum condition was investigated by changing the slurry chemistry. As the planarization effect is very important in SAW filter applications, the examination of the effective particle number effect and the particle size effect was carried out. Z-cut langasite surface which had been polished with the colloidal silica slurries was etched in a variety of etchants. Conventional quartz etchants destroyed the polished surface. Other etchants formed a thin film on the surfaces. In this experiment, the reaction between langasite and a few etching solution was analysed. And an appropriate selective etchant solution for analyzing the defects was synthesized.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.68-68
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• 2011

As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

• Tribology and Lubricants
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• v.32 no.2
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• pp.61-66
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• 2016

Total thickness variation (TTV), BOW, and surface roughness are essential characteristics for high quality sapphire substrates. Many researchers have attempted to increase removal rate by controlling the key process parameters like pressure and velocity owing to the high cost of consumables in sapphire chemical mechanical polishing (CMP). In case of the pressure approach, increased pressure owing to higher deviation of pressure over the wafer leads to significant degradation of the TTV. In this study, the authors focused on reducing TTV under the high-pressure conditions. When the production equipment polishes multiple wafers attached on a carrier, higher loads seem to be concentrated around the leading edge of the head; this occurs because of frictional force generated by the combination of table rotation and the height of the gimbal of the polishing head. We believe the skewed pressure distribution during polishing to be the main reason of within-wafer non-uniformity (WIWNU). The insertion of a hub ring between the polishing head and substrate carrier helped reduce the pressure deviation. Adjusting the location of the hub ring enables tuning of the pressure distribution. The results indicated that the position of the hub ring strongly affected the removal profile, which confirmed that the position of the hub ring changes the pressure distribution. Furthermore, we analyzed the deformation of the head via finite element method (FEM) to verify the pressure non-uniformity over the contact area Based on experiment and FEM results, we determined the optimal position of hub ring for achieving uniform polishing of the substrate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.1
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• pp.51-56
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• 2018

To evaluate surface characteristics of AlN single crystal grown by physical vapor transport (PVT) method, chemical mechanical polishing (CMP) were performed with diamond slurry and $SiO_2$ slurry after mechanical polishing (MP), then the surface morphology and analysis of polishing characteristics of the slurry types were analyzed. To estimate how pH of slurry effects polishing process, pH of $SiO_2$ slurry was controlled, the results from estimating the effect of zeta potential and MRR (material removal rate) were compared in accordance with each pH via zeta potential analyzer. Eventually, surface roughness RMS (0.2 nm) could be derived with atomic force microscope (AFM).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.218-223
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• 2001

The chemical-mechanical polishing process was carried out for 2"-dia. sapphire wafer grown by horizontalBridgman method on the urethane lapping pad with the silica sol. The polished wafer shows the full-width at halfmaximum of 200~400 arcsec in double-crystal X-ray diffraction, indicating that the slicing, grinding and lapping processes before the polishing process affected the crystalline structural property of the wafer surface by the mechanical residual stress. For the inclusion of surface treatments after chemical-mechanical polishing such as the thermal annealing at the temperature of $1,200^{\circ}C$for 4 hrs. and chemical etching, the crystalline quality was sigdicantly enhanced with the reduced full-width at half maximum up to 8.3 arcsec.arcsec.

• Progress in Superconductivity
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• v.10 no.2
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• pp.103-107
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• 2009

$Bi_2Sr_2Ca_1Cu_2O_x$(BSCCO 2212) superconductors for current lead were fabricated by centrifugal melting process(CMP). BSCCO 2212 powder was melted at $1200^{\circ}\C$ in a resistance furnace using a Pt crucible and poured in a rotating cylindrical mold preheated at $550^{\circ}\C$ for 2 hour. The solidified BSCCO-2212 samples were heat-treated by partial melting process in oxygen atmosphere. The current-voltage curves at 77 K of the samples were obtained by transport measurement, and the microstructure was investigated by scanning electron microscope. The $J_c$ values at 77 K of the tubes partially melted at $840^{\circ}C,\;860^{\circ}C\;and\;880^{\circ}C$ were 492, 430 and 398 $A/cm^2$, respectively. It was observed that the plate-like grains in BSCCO 2212 tube was more developed in the sample heat-treated at $840^{\circ}C$. It was found that the critical current of the BSCCO 2212 samples was dependent on the partial melting schedule regarding the grain shape and size of the BSCCO 2212.