• Journal of the Korea Organic Resources Recycling Association
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• v.30 no.3
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• pp.5-12
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• 2022

This study suggests the effective recycling method of sludge waste from various industrial fields to synthesize uniform colloidal silica nanoparticles. In detail, polymers are removed from the sludge waste to attain sludge-extracted silica (s-SiO₂) micron-sized particles, and ammonia assisted sonication is applied to s-SiO₂, which has effectively extracted the silanol precursor. The nano-sized silica (n-SiO₂) particles are successfully synthesized by a typical sol-gel method using silanol precursor. Also, the yield amounts of n-SiO₂ are determined by the function of s-SiO₂ etching time. Finally, n-SiO₂-based slurry is synthesized for the practical CMP application. As a result, rough-surfaced semiconductor chip is successfully polished by the n-SiO₂-based slurry to exhibit the mirror-like clean surface. In this regard, sludge wastes are successfully prepared as valuable semicondutor grade materials.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.10
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• pp.156-162
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• 2002

There are many factors affecting the results of CMP (Chemical Mechanical Polishing). Among them, the temperature is related to the removal rate and WIWNU (Within Wafer Non-Uniformity). In other words, the removal rate is proportional to the temperature and the variation of temperature distribution on a pad affects the non-uniformity within a wafer. In the former case, the active chemistry improves the rate of chemical reaction and the removal rate becomes better. But, there are not many advanced studies. In the latter case, a kinematical analysis between work-piece and pad can be obtained. And such result analysed from the mechanical aspect can be directly related to the temperature distribution on a pad affecting WIWNU. Meanwhile, the temperature change affects the quantities of both slurry and pad. The change of a pH value of the slurry chemistry due to a temperature variation affects the surface state of an abrasive particle and hence the agglomeration of abrasives happens above the certain temperature. And the pH alteration also affects the zeta potential of a pad surface and therefore the electrical force between pad and abrasive changes. Such results could affect the removal rate and etc. Moreover, the temperature changes the 1st and 2nd elastic moduli of a pad which are closely related to the removal rate and the WIWNU.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.86-89
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• 2003

Chemical Mechanical Planarization(CMP) has been accepted as the most effective processes for ultra large scale integrated (ULSI) chip manufacturing. However, as the polishing process continues, pad pores get to be glazed by polishing residues, which hinder the supply of new slurry. And pad surface is ununiformly deformed as real contact distance. These defects make material removal rate(MRR) decrease with a number of polishied wafer. Also the desired within-chip planarity, within wafer non-uniformity(WIWNU) and wafer to wafer non-uniformity(WTWNU) arc unable to be achieved. So, pad conditioning in CMP Process is essential to overcome these defects. The eletroplated or brazed diamond conditioner is used as the conventional conditioning. And. allumina long fiber, the jet power of high pressure deionized water, vacuum compression. ultrasonic conditioner aided by cavitation effect and ceramic plate conditioner are once used or under investigation. But. these methods arc not sufficient for ununiformly deformed pad surface and the limits of conditioning effect. So this paper focuses on the characteristics of diamond conditioner which reopens glazed pores and removes ununiformly deformed pad away.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.139-144
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• 2011

CMP process is an essential element in the semiconductor product processes in Chemical Mechanical Polishing. Taken as a whole, CMP is one process, but concretely, it is a detail process which consists of polishing, cleaning, and so on. Especially, the polishing and cleaning are key points in the whole process. Polishing rate is the most important factor and is related with deposition of slurry in the polishing process. Each outlet velocities is the most important factors in cleaning process. And when the velocities are more uniform, the cleaning becomes more effective. In this research, based on these factors, we performed a numerical analysis for effective polishing and cleaning which can be applied to industrial field. Consequently, we figured out that more than one opened nozzle is more effective than one opened nozzle at the polishing pad in case of this research. And we confirmed that the revised models have the uniform velocity distribution more than the previous model of the cleaning nozzle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.231-234
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• 2004

Chemical mechanical polishing(CMP) process was studied in terms of tribology in this paper. CMP performed by the down force and the relative motion of pad and wafer with the slurry is typically tribological system composed of friction, wear and lubrication. The piezoelectric quartz sensor for friction force measurement was installed and the friction force was detected during CMP process. Various coefficient of friction was attained and analyzed with the kind of pad, abrasive and the abrasive concentration. The lubrication regime is also classified with ${\eta}v/p(\eta,\;v\;and\;p;$ the viscosity, relative velocity and pressure). Especially, the co-relation not only between the friction force and the removal per unit distance but also between the coefficient of friction and within-wafer-nonuniformity was estimated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.1
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• pp.51-56
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• 2018

To evaluate surface characteristics of AlN single crystal grown by physical vapor transport (PVT) method, chemical mechanical polishing (CMP) were performed with diamond slurry and $SiO_2$ slurry after mechanical polishing (MP), then the surface morphology and analysis of polishing characteristics of the slurry types were analyzed. To estimate how pH of slurry effects polishing process, pH of $SiO_2$ slurry was controlled, the results from estimating the effect of zeta potential and MRR (material removal rate) were compared in accordance with each pH via zeta potential analyzer. Eventually, surface roughness RMS (0.2 nm) could be derived with atomic force microscope (AFM).

• Tribology and Lubricants
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• v.26 no.4
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• pp.219-223
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• 2010

Despite the increasing need of nanometer-scale accuracy in abrasive machining using ultrasmall particles such as abrasive jet and chemical mechanical polishing(CMP), the process mechanism is still unknown. Based on the background, research on the effects of various process parameters on the machined surface at abrasive machining was motivated and performed by using finite element analysis where the effect of slurry fluid flow involved. The effect of particle shape on the machined surface during particle-surface collision was discussed in this paper. The results from FEA simulation revealed that any damage or defect generation on machined surface by the impact may occur only if the particle has enough impact energy. Therefore, it could be concluded that generation of the defects and damage on the wafer surface after CMP process was mainly due to direct contact of the 3 bodies, i.e., pad-particle-wafer.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.1
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• pp.85-90
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• 2003

Removal rate and Within Wafer Non-Uniformity (WIWNU), the most critical issues in Chemical Mechanical Polish (CMP) process, are related to the pressure distribution, wafer shape, slurry flow, mechanical property of pad and etc. Among them, wafer warp generated by other various manufacturing process of wafer may induce the deviation of pressure distribution on the backside of wafer. In the convex shaped wafer the pressure onto the backside of wafer is higher than that of perfectly flat shaped wafer. Besides, such an added pressure is in proportion to the curvature of wafer. That is, the bigger the curvature of wafer becomes the higher the removal rate goes. And the WIWNU is known to be directly related to the pressure distribution on the wafer as well. In other words, the deviation of pressure distribution is in proportion to the WIWNU. In this paper, it is found that the wafer shape may be modified through heating the backside of it and thus properly changed pressure onto the backside of it may improve the WIWNU.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.65-65
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• 2003

Chemical mechanical polishing (CMP) is one of the most important processes in recent ULSI (Ultra Large Scale Integrated Circuit) manufacturing technology. Recently, ceria slurries with surfactant have recently been used in STI-CMP,[1] became they have high oxide-to-nitride removal selectivity and widen the processing margin The role of the abrasives, however, on the effect of planarization on STI-CMP is not yet clear. In this study, we investigated how the crystal characteristic affects the planarization efficiency of wafer surface with controlling crystallite size and poly crystalline abrasive size independently.

• KSTLE International Journal
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• v.5 no.1
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• pp.32-35
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• 2004

The purpose of this study is to investigate the effects of the structure and mechanical properties of laser-processed pads on their polishing behavior such as their removal rate and WIWNU (within wafer non-uniformity) during the chemical mechanical planarization (CMP) process. The holes on the pad acted as the reservoir of slurry particles and enhanced the removal rate. Without grooves, no effective removal of wafers was possible. When the length of the circular-type grooves was increased, higher removal rates and lower wafer non-uniformity were measured. The removal rate and non-uniformity linearly increased as the elastic modulus of the top pad increased. Higher removal rates and lower non-uniformity were measured as the hardness of the pad increased.