• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.188-191
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• 2003

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.24.2-24.2
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• 2011

Ru is used as a bottom electrode capacitor in dynamic random access memories (DRAMs) and ferroelectric random access memories (FRAMs). The surface of the Ru needs to be planarized which is usually done by chemical mechanical polishing (CMP). Ru CMP process requires chemical slurry consisting of abrasive particles and oxidizer. A slurry containing NaIO4 and alumina particles is already proposed for Ru CMP process. However, the stability of the slurry is critical in the CMP process since if the particles in the slurry get agglomerated it would leave scratches on the surface being planarized. Thus, in the present work, the stability behavior of the slurry using a suitable anionic polyelectrolyte is investigated. The parameters such as slurry pH, polyelectrolyte concentration, adsorption time and the sequence of addition of chemicals are optimized. The results show that the slurry is stable for longer time at an optimized condition. The polishing behavior of the Ru using the optimized slurry is also investigated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.41-44
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• 2003

As the device feature size is reduced to the deep sub-micron regime, the chemical mechanical polishing (CMP) technology is widely recognized as the most promising method to achieve the global planarization of the multilevel interconnection for ULSI applications. However, cost of ownership (COO) and cost of consumables (COC) were relatively increased because of expensive slurry. In this paper, the effects of different slurry composition on the oxide CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity. We prepared the various kinds of slurry. In order to save the costs of slurry, the original slurry was diluted by de-ionized water (DIW). And then, alunima abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry.

• Transactions on Electrical and Electronic Materials
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• 제7권4호
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• pp.163-166
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• 2006

The dishing and the erosion were evaluated on the tungsten CMP process with conventional and new developed slurry. The tungsten thin film was polished by orbital polishing equipment. Commercial pattern wafer was used for the evaluation. Both slurries were pre tested on the oxide region on the wafer surface and the removal rate was not different very much. At the pattern density examination, the erosion performance was increased at all processing condition due to the reduction of thickness loss in new slurry. However, the dishing thickness was not remarkably changed at high pattern density despite of the improvement at low pattern density. At the large pad area, the reduction of dishing thickness was clearly found at new tungsten slurry.

• 전기전자학회논문지
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• 제23권4호
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• pp.1175-1181
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• 2019

논문에서는 1:10으로 희석된 실리카 슬러리에 산화망간(MnO₂) 연마제를 첨가하여 재처리된 혼합연마제 슬러리(Mixed Abrasive Slurry; MAS)의 화학기계적연마(CMP) 특성을 연구하였다. 최적의 연마 성능을 갖는 슬러리를 설계하기 위해서는 높은 연마율, 하부층에 대한 적절한 연마선택비, 연마 후의 낮은 표면결함, 슬러리의 안정성 등을 얻어야 한다. 산화망간이 첨가된 MAS의 연마 성능은 연마율 및 비균일도와 같은 CMP 성능, 입도 분석, 표면 형상에 대해 평가하였다. 실험결과, 높은 연마율과 낮은 비균일도 측면에서 볼 때 원액 실리카 슬러리와 대등한 슬러리 특성을 얻을 수 있었다. 따라서 본 연구에서 제안하는 MnO₂-MAS를 사용하면 고가의 소모재인 슬러리를 절약하는데 매우 유용할 것이다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.85-86
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables arc relatively high because of expensive slurry. In this paper, in order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$, abrasives were added in the diluted silica slurry (DSS) in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry (MAS) for the oxide CMP application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.571-572
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• 2006

Tungsten CMP needs interconnect of semiconductor device ULSI chip and metal plug formation, CMP technology is essential indispensable method for local planarization. This Slurry development also for tungsten CMP is important, slurry of metal wiring material that is used present is depending real condition abroad. It is target that this research makes slurry of efficiency that overmatch slurry that is such than existing because focus and use colloidal silica by abrasive particle to internal production technology development. Compared selectivity of slurry that is developed with competitor slurry using 8" tungsten wafer and 8" oxide wafer in this experiment. And removal rate measures about density change of $H_2O_2$ and Fe particle. Also, corrosion potential and current density measure about Fe ion and Fe particle. As a result, selectivity find 83:1, and expressed similar removal rate and corrosion potential and current density value comparing with competitor slurry.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 추계 기술심포지움
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• pp.235-239
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• 2001

In recent years, as Chemical Mechanical Planarization(CMP) has been routinely utilized in integrated circuit(IC) fabrication, the consumption of slurry, main consumable in a CMP process, is greatly increased. Thus the reprocess of CMP slurries has been actively considered in the industry to reduce cost-of-consumable (COC). The main purpose of this study was to recycle the used oxide slurry using filters as a new method. As a result, Ultra Fine(UF) Filter could distinguish silica from the used oxide slurry and Reverse Osmosis(RO) Filter could distinguish Deionized(DI) Water and chemistry from chemistry solution. The tetraethylorthosilicate removal rate was almost the same as the number of recycle polishing was increased, when it was modified by slightly adding new SS-12 slurry. The microscratch didnt found as the number of recycle polishing was increased.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 제35회 춘계학술대회
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• pp.272-278
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• 2002

Recently, STI(Shallow Trench Isolation) process has attracted attention for high density of semiconductor device as a essential isolation technology. In this paper, the effect of pattern density, trench width and selectivity of slurry on dishing in STI CMP process was investigated by using specially designed isolation pattern. As trench width increased, the dishing tends to increase. At $20{\mu}m$ pattern size, the dishing was decreased with increasing pattern density Low selectivity slurry shows less dishing at over $160{\mu}m$ trench width, whereas high selectivity slurry shows less dishing at below $160{\mu}m$ trench width.

• 한국전기전자재료학회논문지
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• 제15권10호
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• pp.851-857
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• 2002

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi~level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40%. So, we focused how to reduce the consumption of raw slurry In this paper, we presented the pH changes of diluted slurry and pH control as a function of KOH contents. Also, the removal rates of slurry with different dilution ratio were investigated. Finally, the CMP characteristics were discussed as a function of silica (SiO$_2$) abrasive contents.