• 한국세라믹학회지
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• 제44권5호
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• pp.144-147
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• 2007

Calcium metaphosphate (CMP) nanofibers with a diameter of ${\sim}600nm$ were prepared using electrospun CMP/polyvinylpyrrolidone (PVP) fibers through a process of drying for 5 h in air followed by annealing for 1 h at $650^{\circ}C$ in a vacuum. The viscosity of the CMP/PVP precursor containing 0.15 g/ml of PVP was 76 cP. Thermal analysis results revealed that the fibers were crystallized at $569^{\circ}C$. The crystal phase of the as-annealed fiber was determined to be ${\delta}-CMP\;({\delta}-Ca(PO_3)_2)$. However, the morphology of the fibers changed from smooth and uniform (as-spun fibers) to linked-particle characteristics with a tubular form most likely due to the decomposition of the inner PVP matrix. It is expected that this large amount of available surface area has the potential to provide unusually high bioactivity and fast responses in clinical hard tissue applications.

• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.28-31
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• 2003

Copper CMP in terms of the effect of slurry chemicals (oxidizer, corrosion inhibitor, complexing agent) on the process characteristics has been performed. Corrosion inhibitors, benzotriazole (BTA) and tolytriazol (TTA) were used to control the removal rate and avoid isotropic etching. When complexing agent is added with H$_2$O$_2$ 2 wt% in the slurry, the corrosion rate was presented very well. In the case of complexing agent, it was estimated that the proper concentration is 1 wt%, because the addition of tartaric acid to alumina slurry causes low pH and the slurry dispersion stability become unstable. There was not much change of the removal rate. It was assumed that BTA 0.05 wt% is suitable. Most of all, it was appeared that BTA is possible to be replaced by TTA. TTA was distinguished for the effect among complexing agents.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 A
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• pp.603-604
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• 2006

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. According to the CMP removal rates and particle size distribution, and the micro- structures of surface layer as a function of oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_{2}O_3$ abrasive particles in CMP slurry.

• 한국철도학회논문집
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• 제9권2호
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• pp.222-229
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• 2006

Recently, the development of the paved track is required as a low-maintenance of conventional line. The main reason is that the line capacity and bearing of track are increased progressively. The important factors of paved track are stability and applicability. To be based on this subject, Cement Mortar Pouring(CMP) paved track is developed. CMP paved track is a kind of ballast reinforced track using the prepacked concrete technique. The most important thing to design the paved track is to optimize the track structure considering various conditions. Because construction environment is very limited, cost is expensive and it has very complicated behavior. On this paper, structural characteristics of the paved track are investigated using the 3D finite element analysis to verify the optimized structure of the CMP track.

• Tribology and Lubricants
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• 제15권1호
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• pp.90-97
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• 1999

Chemical-Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active, abrasive containing slurry. CU process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves tribology. The liquid slurry is trapped between the wafer (work piece) and pad (tooling) forming a lubricating film. For the first step to understand material removal rate of the CMP process, the lubricational analyses were done with commercial 100mm diameter silicon wafers to get nominal clearance of the slurry film, roll and pitch angle at the steady state. For this purpose, we calculate slurry pressure, resultant forces and moments at the steady state in the range of typical industrial polishing conditions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.358-359
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• 2005

Chemical mechanical polishing(CMP) process depends on a variety of variables. Especially, surface roughness of pad plays a key role in material removal in CMP in terms of transportation ability of pores and real contact area. The surface roughness is deteriorated with polishing time by applied pressure and relative velocity. In this reason, diamond conditioner has been used to maintain the roughness on the pad. The authors try to investigate the correlation between pad roughness and frictional behavior by comparing ex-situ conditioning with in-situ conditioning.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권11호
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• pp.551-555
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• 2004

In this paper, in order to reduce the high COO (cost of ownership) and COC (cost of consumables), we have collected the silica abrasive powders by filtering method after subsequent CMP (chemical mechanical polishing) process for the purpose of abrasives recycling. And then, we have studied the possibility of recycle of reused silica abrasive through the analysis of particle size distribution and FE-SEM (field emission-scanning electron microscope) measurements of abrasive powders. It was annealed the collected abrasive powders to promote the mechanical strength of reduced abrasion force. Finally, we compared the CMP characteristics between self-developed KOH-based silica abrasive slurry and original slurry. As our experimental results, we obtained the comparable rate of removal and good planarity with commercial products. Consequently we can expect the saving of high cost slurry.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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• pp.1269-1270
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• 2006

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. According to the CMP removal rates and particle size distribution, and the micro-structures of surface layer as a function of oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_2O_3$ abrasive particles in CMP slurry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.542-542
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• 2008

본 논문에서는 기존에 상용화된 슬러리에 비해 새로운 혼합 연마제 슬러리의 우수성을 입증하고, 최적화 된 공정기술을 연구의 기반으로 활용하고자 Silica slurry에 $CeO_2$ 연마제를 혼합하여, 어떠한 연마 특성을 나타내는지 알아보았고, AFM, EDX, XRD, TEM 분석을 통해 그 가능성을 비교 분석하였다.

• Transactions on Electrical and Electronic Materials
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• 제5권6호
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• pp.233-236
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• 2004

Copper metallization has been used in high-speed logic ULSI devices instead of the conventional aluminum alloy metallization. One of the key issues in copper CMP is the development of slurries that can provide high removal rates. In this study, the effects of slurry chemicals and pH for slurry dispersion stability on Cu CMP process characteristics have been performed. The experiments of copper slurries containing each different alumina and colloidal silica particles were evaluated for their selectivity of copper to TaN and $SiO_{2}$ films. Furthermore, the stability of copper slurries and pH are important parameters in many industries due to problems that can arise as a result of particle settling. So, it was also observed about several variables with various pH.