• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.45-48
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• 2003

The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on tungsten passivation layer in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we investigated the effects of oxidizer on W-CMP process with three different kinds of oxidizers, such as $H_2O_2$, $Fe(NO_3)_3$, and $KIO_3$. In order to compare the removal rate and non-uniformity of three oxidizers, we used alumina-based slurry of pH 4. According to the CMP tests, three oxidizers showed different removal mechanism on tungsten surface. Also, the microstructures of surface layer by AFM image were greatly influenced by the slurry chemical, composition of oxidizers. The difference in removal rate and roughness of tungsten surface are believed to caused by modification in the mechanical behavior of $Al_2O_3$ abrasive particles in CMP slurry. Our stabilized slurries can be used a guideline and promising method for improved W-CMP process.

• 동아시아식생활학회지
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• 제18권6호
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• pp.1022-1031
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• 2008

감귤 분말을 첨가한 파운드케이크의 특성을 분석하기 위하여 감귤 분말의 일반 성분과 품질 특성 결과는 다음과 같았다. 감귤 분말의 수분 함량은 13.72%, 조단백질 함량은 5.22%, 조지방 함량은 1.31%, 조회분 함량은 1.94%로 나타났다. 파운드케이크의 수분 함량은 대조군이 28.87%, 감귤 분말$5{\sim}20%$ 첨가구가 $28.75{\sim}29.62%$로, 수분 함량의 차이가 없었고, 대조구에 비하여 조단백질, 조지방 함량은 감소하였고, 조회분 함량은 증가하였으며, 조지방 함량에서만 유의적인 차이가 있었다(p<0.05). 감귤 분말을 첨가한 Amylograpm 호화 특성 중 호화 개시 온도는 감귤 분말 첨가량이 증가할수록 높게 나타났고, 최고 점도는 대조군이 686.00 B.U.로 가장 높았으며, 감귤 분말 20% 첨가구는 401.00 B.U.로 감귤분말 첨가량이 증가할수록 낮게 나타났다. Breakdown은 감귤분말 10% 첨가까지는 증가했으나 그 이상의 첨가량에서는 감소하였으며, setback 값은 감귤 분말 첨가량이 증가할수록 감소하는 특징을 나타내었다. 색도 측정 결과 감귤 분말 첨가량이 증가할수록 L값은 감소하였고 a값과 b값은 증가하였다. 조직감은 대조구에 비하여 감귤 분말 첨가량이 증가할수록 견고성은 높게 나타났고, 부착성과 응집성, 탄력성은 낮았으며 시료간에 유의한 차이가 있었다. 관능검사 결과, 색깔, 입안의 느낌, 부푼 정도 및 질감에 대한 기호도는 대조구에서 가장 높았고, 맛, 향미 및 전체적인 선호도에서는 감귤분말 10% 첨가구에서 가장 높게 나타났다. pH는 저장 기간이 경과할수록 모든 시료구에서 pH가 낮아졌으며, 대조구보다 감귤 분말 첨가구가 더 낮게 나타났다. 적정 산도는 10째부터 급격히 증가하였고 감귤 분말 첨가량이 많을수록 변화의 폭이 컸다. 저장 중 색도의 변화는 저장 기간이 경과함에 따라 모든 시료구에서 L값, a, 값, b값은 감소되었다. 저장 중 조직감은 견고성, 부착성, 점착성 및 씹힘성은 저장 기간이 길어질수록 증가하였고, 탄력성과 응집성은 감소하는 경향을 나타내었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권3호
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• pp.128-132
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• 2004

The perovskite ferroelectric materials of the PZT, SBT and BST series will attract much attention for application to ULSI devices. Among these materials, the BST ($Ba_0.6$$Sr_0.4$/$TiO_3$) is widely considered the most promising for use as an insulator in the capacitors of DRAMS beyond 1 Gbit and high density FRAMS. Especially, BST thin films have a good thermal-chemical stability, insulating effect and variety of Phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the surface characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.55-56
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• 2006

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ($Ba_{0.6}Sr_{0.4}TiO_3$), PZT ($Pb_{1.1}(Zr_{0.52}TiO_{0.48})O_3$) and BTO ($BaTiO_3$) ferroelectric film are fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of BST, PZT, BTO films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 A
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• pp.601-602
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry(MAS). In order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$,$CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 D
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• pp.2233-2234
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry(MAS). In order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$, $CeO_2$,and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 D
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• pp.2235-2236
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry(MAS). In order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$, $CeO_2$,and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.161-161
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• 2008

The oxide film of silicon wafer has been mainly polished by fumed silica, colloidal silica or ceria slurry. Because colloidal silica slurry is uniform and highly dispersed composed of spherical shape particles, by which the oxide film polished remains to be less scratched in finishing polishing process. Even though the uniformity and spherical shape is advantage for reducing the scratch, it may also be the factor to decrease the removal rate. We have studied the correlation of silica abrasive particles and CMP characteristics by varying pH, down force, and table rotation rate in polishing. It was found that the CMP polishing is dependent on the morphology, aggregation, and the surface property of the silica particles.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2000년도 춘계학술대회 논문집
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• pp.854-857
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• 2000

Chemical Mechanical Polishing(CMP) has been accepted as one of the essential processes for VLSI fabrication. However, as the polishing process continues, pad pores get to be glazed by polishing residues, which hinder the supply of new slurry. This defect makes removal rate decrease with a number of polished wafer and the desired within-chip planarity, within wafer and wafer-to-wafer nonuniformity are unable to be achieved. So, pad conditioning is essential to overcome this defect. The eletroplated diamond grit disk is used as the conventional conditioner, And alumina long fiber, the .jet power of high pressure deionized water and vacuum compression are under investigation. But, these methods have the defects like scratches on wafer surface by out of diamond grits, subsidences of pad pores by over-conditioning, and the limits of conditioning effect. To improve these conditioning methods. this paper presents the Characteristics of Ultrasonic conditioning aided by cavitation.

• 대한기계학회논문집A
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• 제33권3호
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• pp.196-200
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• 2009

Lithium niobate ($LN:LiNbO_3$) is a compound of niobium, lithium and oxygen. The characteristics of LN are piezoelectricity, ferroelectricity and photoelectricity, and which is widely used in surface acoustic wave (SAW). To manufacture LN devices, the LN surface should be a smooth surface and defect-free because of optical property, but the LN material is processed difficult b traditional processes such as grinding and mechanical polishing (MP) because of its brittleness. To decrease defects, chemical mechanical polishing (CMP) was applied to the LN wafer. In this study, the suitable parameters such as down force and relative velocity, were investigated for the LN CMP process To improve roughness, the LN CMP was performed using the parameters that were the highest removal rate among process parameters. And, evaluation of optical property was performed by the optical reflectance.