• JSTS:Journal of Semiconductor Technology and Science
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• 제14권6호
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• pp.760-767
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• 2014

This paper describes a high-radix crossbar switch design with low latency and power dissipation for Network-on-Chip (NoC) applications. The reduction in latency and power is achieved by employing a folded-clos topology, implementing the switch organized as three stages of low-radix switches connected in cascade. In addition, to facilitate the uniform placement of wires among the sub-switch stages, this paper proposes a Mux-Matrix-Mux structure, which implements the first and third switch stages as multiplexer-based crossbars and the second stage as a matrix-type crossbar. The proposed 256-radix, 8-bit crossbar switch designed in a 65nm CMOS has the simulated power dissipation of 1.92-W and worst-case propagation delay of 0.991-ns while operating at 1.2-V supply and 500-MHz frequency. Compared with the state-of-the-art designs in literature, the proposed crossbar switch achieves the best energy-delay-area efficiency of $0.73-fJ/cycle{\cdot}ns{\cdot}{\lambda}^2$.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 통신소사이어티 추계학술대회논문집
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• pp.32-36
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• 2003

In this work, we have designed a fully integrated 2.4GHz LC-tuned voltage-controlled oscillator (VCO) with multiple tuning inputs for a 0.25-$\mu\textrm{m}$ standard CMOS process. The design of voltage-controlled oscillator is based on an LC-resonator with a spiral inductor of octagonal type and pMOS-varactors. Only two metal layer have been used in the designed inductor. The frequency tuning is achieved by using parallel pMOS transistors as varactors and back-gate tuned pMOS transistors in an active region. Coarse tuning is achieved by using 3-bit pMOS-varactors and fine tuning is performed by using back-gate tuned pMOS transistors in the active region. When 3-bit digital and analog inputs are applied to the designed circuits, voltage-controlled oscillator shows the tuning feature of frequency range between 2.3 GHz and 2.64 GHz. At the power supply voltage of 2.5 V, phase noise is -128dBc/Hz at 3MHz offset from the carrier. Total power dissipation is 7.5 mW.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• 한국멀티미디어학회논문지
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• 제13권7호
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• pp.943-949
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• 2010

본 논문은 하드웨어 곱셈 연산을 최적화하여 리프팅 기반의 9/7 웨이블릿 필터의 개선된 VLSI의 구조를 제안한다. 제안한 구조는 범용 곱셈기를 사용하는 기존의 리프팅 기반의 웨이블릿 필터와 비교하여 화질의 열화 없이 보다 적은 로직과 전력소모를 갖는다. 본 논문은 Pattern search 기반의 Lefevre 알고리즘을 이용하여 하드웨어 구조를 개선한다. 제안한 구조는 범용의 곱셈기를 단순한 shift-add 연산으로 대체하여 하드웨어 구현을 단순하게 하고 계산 속도를 빠르게 한다. 제안한 구조와 기존의 구조를 Verilog HDL을 이용하여 구현하고 비교 실험하였다. 두 구조는 0.18um 디지털 CMOS 공정의 스탠다드 셀을 이용하여 합성된다. 제안한 구조는 200MHz의 합성 타겟 클록 주파수에서 기존의 구조에 비해 면적, 전력소모와 최대 지연시간이 각각 약 51%, 43%와 30%로 감소하였다. 구현 결과를 통해 제안한 구조가 범용의 곱셈기 블록을 사용한 기존의 구조보다 스탠다드 셀을 이용한 ASIC 구현에 보다 적합하다는 것을 보여준다.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.285-296
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• 2005

Reduced pressure chemical vapor deposition technology has been used to study SiGe heterostructure epitaxy and device issues, including SiGe relaxed buffers, proper control of Ge component and crystalline defects, two dimensional delta doping, and their influence on electrical properties of devices. From experiments, 2D profiles of B and P presented FWHM of 5 nm and 20 nm, respectively, and doses in 5×10/sup 11/ ∼ 3×10/sup 14/ ㎝/sup -2/ range. The results could be employed to fabricate SiGe/Si heterostructure field effect transistors with both Schottky contact and MOS structure for gate electrodes. I-V characteristics of 2D P-doped HFETs revealed normal behavior except the detrimental effect of crystalline defects created at SiGe/Si interfaces due to stress relaxation. On the contrary, sharp B-doping technology resulted in significant improvement in DC performance by 20-30 ％ in transconductance and short channel effect of SiGe HMOS. High peak concentration and mobility in 2D-doped SiGe heterostructures accompanied by remarkable improvements of electrical property illustrate feasible use for nano-sale FETs and integrated circuits for radio frequency wireless communication in particular.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.7-10
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• 2003

Samsung SDI has developed a full color 5.0" WVGA AMOLED display with top emission and a super fine pitch of 0.1365mm(l86ppi), the world's highest resolution OLED display ever reported to date. Scan driver circuits and demux circuit were integrated into the display panel, using low temperature poly-Si TFT CMOS technology, and data driver circuit were mounted using COG chips. Peak luminescence was greater than 300cd/ $m^2$ with power consumption of 500mW with 30% of the pixels on illuminated.

• 한국지능시스템학회:학술대회논문집
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• 한국퍼지및지능시스템학회 1993년도 Fifth International Fuzzy Systems Association World Congress 93
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• pp.975-976
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• 1993

This talk presents the overview of the author's research and development activities on fuzzy inference hardware. We involved it with two distinct approaches. The first approach is to use application specific integrated circuits (ASIC) technology. The fuzzy inference method is directly implemented in silicon. The second approach, which is in its preliminary stage, is to use more conventional microprocessor architecture. Here, we use a quantitative technique used by designer of reduced instruction set computer (RISC) to modify an architecture of a microprocessor. In the ASIC approach, we implemented the most widely used fuzzy inference mechanism directly on silicon. The mechanism is beaded on a max-min compositional rule of inference, and Mandami's method of fuzzy implication. The two VLSI fuzzy inference chips are designed, fabricated, and fully tested. Both used a full-custom CMOS technology. The second and more claborate chip was designed at the University of North Carolina(U C) in cooperation with MCNC. Both VLSI chips had muliple datapaths for rule digital fuzzy inference chips had multiple datapaths for rule evaluation, and they executed multiple fuzzy if-then rules in parallel. The AT & T chip is the first digital fuzzy inference chip in the world. It ran with a 20 MHz clock cycle and achieved an approximately 80.000 Fuzzy Logical inferences Per Second (FLIPS). It stored and executed 16 fuzzy if-then rules. Since it was designed as a proof of concept prototype chip, it had minimal amount of peripheral logic for system integration. UNC/MCNC chip consists of 688,131 transistors of which 476,160 are used for RAM memory. It ran with a 10 MHz clock cycle. The chip has a 3-staged pipeline and initiates a computation of new inference every 64 cycle. This chip achieved an approximately 160,000 FLIPS. The new architecture have the following important improvements from the AT & T chip: Programmable rule set memory (RAM). On-chip fuzzification operation by a table lookup method. On-chip defuzzification operation by a centroid method. Reconfigurable architecture for processing two rule formats. RAM/datapath redundancy for higher yield It can store and execute 51 if-then rule of the following format: IF A and B and C and D Then Do E, and Then Do F. With this format, the chip takes four inputs and produces two outputs. By software reconfiguration, it can store and execute 102 if-then rules of the following simpler format using the same datapath: IF A and B Then Do E. With this format the chip takes two inputs and produces one outputs. We have built two VME-bus board systems based on this chip for Oak Ridge National Laboratory (ORNL). The board is now installed in a robot at ORNL. Researchers uses this board for experiment in autonomous robot navigation. The Fuzzy Logic system board places the Fuzzy chip into a VMEbus environment. High level C language functions hide the operational details of the board from the applications programme . The programmer treats rule memories and fuzzification function memories as local structures passed as parameters to the C functions. ASIC fuzzy inference hardware is extremely fast, but they are limited in generality. Many aspects of the design are limited or fixed. We have proposed to designing a are limited or fixed. We have proposed to designing a fuzzy information processor as an application specific processor using a quantitative approach. The quantitative approach was developed by RISC designers. In effect, we are interested in evaluating the effectiveness of a specialized RISC processor for fuzzy information processing. As the first step, we measured the possible speed-up of a fuzzy inference program based on if-then rules by an introduction of specialized instructions, i.e., min and max instructions. The minimum and maximum operations are heavily used in fuzzy logic applications as fuzzy intersection and union. We performed measurements using a MIPS R3000 as a base micropro essor. The initial result is encouraging. We can achieve as high as a 2.5 increase in inference speed if the R3000 had min and max instructions. Also, they are useful for speeding up other fuzzy operations such as bounded product and bounded sum. The embedded processor's main task is to control some device or process. It usually runs a single or a embedded processer to create an embedded processor for fuzzy control is very effective. Table I shows the measured speed of the inference by a MIPS R3000 microprocessor, a fictitious MIPS R3000 microprocessor with min and max instructions, and a UNC/MCNC ASIC fuzzy inference chip. The software that used on microprocessors is a simulator of the ASIC chip. The first row is the computation time in seconds of 6000 inferences using 51 rules where each fuzzy set is represented by an array of 64 elements. The second row is the time required to perform a single inference. The last row is the fuzzy logical inferences per second (FLIPS) measured for ach device. There is a large gap in run time between the ASIC and software approaches even if we resort to a specialized fuzzy microprocessor. As for design time and cost, these two approaches represent two extremes. An ASIC approach is extremely expensive. It is, therefore, an important research topic to design a specialized computing architecture for fuzzy applications that falls between these two extremes both in run time and design time/cost. TABLEI INFERENCE TIME BY 51 RULES {{{{Time }}{{MIPS R3000 }}{{ASIC }}{{Regular }}{{With min/mix }}{{6000 inference 1 inference FLIPS }}{{125s 20.8ms 48 }}{{49s 8.2ms 122 }}{{0.0038s 6.4㎲ 156,250 }} }}