• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.7
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• pp.1303-1310
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• 2016

In this paper, electrocardiogram (ECG) analog front end with supply voltage of 0.5V has been designed and verified by measurements of fabricated chip. ECG is composed of instrument amplifier, 6th order gm-C low pass filter and variable gain amplifier. The instrument amplifier is designed to have gain of 34.8dB and the 6th order gm-C low pass filter is designed to obtain the cutoff frequency of 400Hz. The operational transconductance amplifier of the low pass filter utilizes body-driven differential input stage for low voltage operation. The variable gain amplifier is designed to have gain of 6.1~26.4dB. The electrocardiogram analog front end are fabricated in TSMC $0.18{\mu}m$ CMOS process with chip size of $858{\mu}m{\times}580{\mu}m$. Measurements of the fabricated chip is done not to saturate the gain of ECG by changing the external resistor and measured gain of 28.7dB and cutoff frequency of 0.5 - 630Hz are obtained using the supply voltage of 0.5V.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.11
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• pp.1566-1573
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• 2016

This paper presents a beam-forming receiver with polyphase In-phase/Quadrature-phase (I/Q) network for airborne communication. In beam-forming receiver, the insertion loss (IL) difference between input path increases the receiver noise figure (NF). The major element for generating IL difference is the impedance variation of phase shifter. In order to maintain a constant IL in every phase, this paper propose a lossless polyphase I/Q network based beam-forming receiver. The proposed lossless polyphase I/Q network has low Q-factor and high impedance for drive back-end VGA (Variable gain amplifier) block with low insertion loss. The 2-stage VGA controls in-phase and quadrature-phase amplitude level for vector summation. The proposed beam-forming receiver prototype is fabricated in TSMC $0.18{\mu}m$ CMOS process. The prototype cover the $360^{\circ}$ with $5.6^{\circ}$ LSB. The average RMS phase error and amplitude error is approximately $1.6^{\circ}$ and 0.3dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.9
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• pp.1747-1754
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• 2016

This paper presents a high accuracy and fast hybrid on-chip temperature sensor. The proposed temperature sensor combines a SAR type temperature sensor with a ${\Sigma}{\Delta}$ type temperature sensor. The SAR type temperature sensor has fast temperature searching time but it has more error than the ${\Sigma}{\Delta}$ type temperature sensor. The ${\Sigma}{\Delta}$ type temperature sensor is accurate but it is slower than the SAR type temperature sensor. The proposed temperature sensor uses both the SAR and ${\Sigma}{\Delta}$ type temperature sensors, so that the proposed temperature sensor has high accuracy and fast temperature searching. Also, the proposed temperature sensor includes a temperature error compensating circuit by storing the temperature errors in a memory circuit after chip fabrication. The proposed temperature sensor was fabricated in 3.3V CMOS $0.35{\mu}m$ process. Its temperature resolution, power consumption, and area are $0.15^{\circ}C$, $540{\mu}W$, and $1.2mm^2$, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.9
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• pp.1763-1770
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• 2016

This paper proposed hybrid converter to operate over a wide output load power. The switched-capacitor converter has a high efficiency at low load power and a low efficiency at high load power. On the contrary, the buck converter has a high efficiency at high load power and a low efficiency at low load power. The proposed hybrid converter has combination of the switched-capacitor converter and the buck converter. The switched-capacitor operates at low load power and buck converter operates at high load power, so that the hybrid converter is improved power efficiency at wide output load power. The hybrid converter was implemented with a $0.18{\mu}m$ CMOS process. The hybrid converter has a range of the load power between $50{\mu}W$and 100mW. The maximum power efficiencies are 93% and 77% at the buck converter and the switched-capacitor converter, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1250-1259
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• 2012

In this paper, a time-domain comparator is proposed for a successive approximation (SA) analog-to-digital converter (ADC) with a low power and high resolution. The proposed time-domain comparator consists of a voltage-controlled delay converter with a clock feed-through compensation circuit, a time amplifier, and binary phase detector. It has a small input capacitance and compensates the clock feed-through noise. To analyze the performance of the proposed time-domain comparator, two 1V 10-bit 200-kS/s SA ADCs with a different time-domain comparator are implemented by using 0.18-${\mu}m$ 1-poly 6-metal CMOS process. The measured SNDR of the implemented SA ADC is 56.27 dB for the analog input signal of 11.1 kHz, and the clock feed-through compensation circuit and time amplifier of the proposed time-domain comparator enhance the SNDR of about 6 dB. The power consumption and area of the implemented SA ADC are 10.39 ${\mu}W$ and 0.126 mm2, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.1
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• pp.16-22
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• 2008

We fabricated thermally-evaporated 10 nm-Ni/30 nm and 70 nm Poly-Si/200 nm-$SiO_2/Si$ structures to investigate the thermal stability of nickel silicides formed by rapid thermal annealing(RTA) of the temperature of $300{\sim}1100^{\circ}C$ for 40 seconds. We employed for a four-point tester, field emission scanning electron microscope(FE-SEM), transmission electron microscope(TEM), high resolution X-ray diffraction(HRIXRD), and scanning probe microscope(SPM) in order to examine the sheet resistance, in-plane microstructure, cross-sectional microstructure evolution, phase transformation, and surface roughness, respectively. The silicide on 30 nm polysilicon substrate was stable at temperature up to $900^{\circ}C$, while the one on 70 nm substrate showed the conventional $NiSi_2$ transformation temperature of $700^{\circ}C$. The HRXRD result also supported the existence of NiSi-phase up to $900^{\circ}C$ for the Ni silicide on the 30 nm polysilicon substrate. FE-SEM and TEM confirmed that 40 nm thick uniform silicide layer and island-like agglomerated silicide phase of $1{\mu}m$ pitch without residual polysilicon were formed on 30 nm polysilicon substrate at $700^{\circ}C\;and\;1000^{\circ}C$, respectively. All silicides were nonuniform and formed on top of the residual polysilicon for 70 nm polysilicon substrates. Through SPM analysis, we confirmed the surface roughness was below 17 nm, which implied the advantage on FUSI gate of CMOS process. Our results imply that we may tune the thermal stability of nickel monosilicide by reducing the height of polysilicon gate.

• Journal of Broadcast Engineering
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• v.17 no.2
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• pp.374-387
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• 2012

In this paper, we implement a new hardware for finding the significant coefficients of a digital hologram and ciphering them using discrete wavelet packet transform (DWPT). Discrete wavelet transform (DWT) and packetization of subbands is used, and the adopted ciphering technique can encrypt the subbands with various robustness based on the level of the wavelet transform and the threshold of subband energy. The hologram encryption consists of two parts; the first is to process DWPT, and the second is to encrypt the coefficients. We propose a lifting based hardware architecture for fast DWPT and block ciphering system with multi-mode for the various types of encryption. The unit cell which calculates the repeated arithmetic with the same structure is proposed and then it is expanded to the lifting kernel hardware. The block ciphering system is configured with three block cipher, AES, SEED and 3DES and encrypt and decrypt data with minimal latency time(minimum 128 clocks, maximum 256 clock) in real time. The information of a digital hologram can be hided by encrypting 0.032% data of all. The implemented hardware used about 200K gates in $0.25{\mu}m$ CMOS library and was stably operated with 165MHz clock frequency in timing simulation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.11
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• pp.6-12
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• 2010

A sigma-delta modulator based class-D audio amplifier is presented. Parallel digital input is serialized to two-bit output by a fourth-order digital sigma-delta noise shaper. The output of the digital sigma-delta noise shaper is applied to a fourth-order analog sigma-delta modulator whose three-level output drives power switches. The pulse density modulated (PDM) output of the power switches is low-pass filtered by an LC-filter. The PDM output of the power switches is fed back to the input of the analog sigma-delta modulator. The first integrator of the analog sigma-delta modulator is a hybrid of continuous-time (CT) and switched-capacitor (SC) integrator. While the sampled input is applied to SC path, the continuous-time feedback signal is applied to CT path to suppress the noise of the PDM output. The class-D audio amplifier is fabricated in a standard $0.13-{\mu}m$ CMOS process and operates for the signal bandwidth from 100-Hz to 20-kHz. With 4-${\Omega}$ load, the maximum output power is 18.3-mW. The total harmonic distortion plus noise and dynamic range are 0.035-% and 80-dB, respectively. The modulator consumes 457-uW from 1.2-V power supply.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.4
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• pp.795-803
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• 2017

This paper describes a dual-standard cryptographic processor that efficiently integrates two block ciphers ARIA and AES into a unified hardware. The ARIA-AES crypto-processor was designed to support 128-b and 256-b key sizes, as well as four modes of operation including ECB, CBC, OFB, and CTR. Based on the common characteristics of ARIA and AES algorithms, our design was optimized by sharing hardware resources in substitution layer and in diffusion layer. It has on-the-fly key scheduler to process consecutive blocks of plaintext/ciphertext without reloading key. The ARIA-AES crypto-processor that was implemented with a $0.18{\mu}m$ CMOS cell library occupies 54,658 gate equivalents (GEs), and it can operate up to 95 MHz clock frequency. The estimated throughputs at 80 MHz clock frequency are 787 Mbps, 602 Mbps for ARIA with key size of 128-b, 256-b, respectively. In AES mode, it has throughputs of 930 Mbps, 682 Mbps for key size of 128-b, 256-b, respectively. The dual-standard crypto-processor was verified by FPGA implementation using Virtex5 device.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.1C
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• pp.102-110
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• 2004

In this paper, we propose a VLSI structure of real-time image compression and reconstruction processor using 2-D discrete wavelet transform and implement into a hardware which use minimal hardware resource using ASIC library. In the implemented hardware, Data path part consists of the DWT kernel for the wavelet transform and inverse transform, quantizer/dequantizer, the huffman encoder/huffman decoder, the adder/buffer for the inverse wavelet transform, and the interface modules for input/output. Control part consists of the programming register, the controller which decodes the instructions and generates the control signals, and the status register for indicating the internal state into the external of circuit. According to the programming condition, the designed circuit has the various selective output formats which are wavelet coefficient, quantization coefficient or index, and Huffman code in image compression mode, and Huffman decoding result, reconstructed quantization coefficient, and reconstructed wavelet coefficient in image reconstructed mode. The programming register has 16 stages and one instruction can be used for a horizontal(or vertical) filtering in a level. Since each register automatically operated in the right order, 4-level discrete wavelet transform can be executed by a programming. We synthesized the designed circuit with synthesis library of Hynix 0.35um CMOS fabrication using the synthesis tool, Synopsys and extracted the gate-level netlist. From the netlist, timing information was extracted using Vela tool. We executed the timing simulation with the extracted netlist and timing information using NC-Verilog tool. Also PNR and layout process was executed using Apollo tool. The Implemented hardware has about 50,000 gate sizes and stably operates in 80MHz clock frequency.