• Title/Summary/Keyword: CMOS IC

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A Study on the IC, Implementation of High Speed Multiplier for Real Time Digital Signal Processing (실시간 디지털 신호 처리용 고속 MULTIPLIER 단일칩화에 관한 연구)

  • 문대철;차균현
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.15 no.7
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    • pp.628-637
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    • 1990
  • In this paper we present on architecture for a high sppeed CMOS multiplier which can be used for real-time digital signal processing. And a synthesis method for designing highly parallel algorithms in VLSI is presented. A parallel multiplier design based on the modified Booth's algorithms and Ling's algorthm. This paper addresses the design of multiplier capable of accpting data in 2's complement notation and coefficients in 2's complement notation. Multiplier consists of an interative array of sequential cells, and are well suited to VLSI implementation as a results of their modularity and regularity. Booth's decoders can be fully tested using a relatively small number af test vector.

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Digital Controller Candidate for Point-of-load Synchronous Buck Converter in Tri-mode Mechanism

  • Xiu, Li-Mei;Zhang, Wei-Ping;Li, Bo;Liu, Yuan-Sheng
    • Journal of Power Electronics
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    • v.14 no.4
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    • pp.796-805
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    • 2014
  • A digital controller with a low-power approach for point-of-load synchronous buck converters is discussed and compared with its analog counterpart to confirm its feasibility for system integration. The tri-mode digital controller IC in $0.35{\mu}m$ CMOS process is presented to demonstrate solutions that include a PID, quarter PID, and robust RST compensators. These compensators address the steady-state, stand-by, and transient modes according to the system operating point. An idle-tone free condition for ${\Sigma}-{\Delta}$ DPWM reduces the inherent tone noise under DC-excitation. Compared with that of the traditional approach, this condition generates a quasi-pure modulation signal. Experimental results verify the closed-loop performances and confirm the power-saving mechanism of the proposed controller.

Built-In Self-Test of DAC using CMOS Structure (CMOS 구조를 이용한 DAC의 자체 테스트 기법에 관한 연구)

  • Cho, Sung-Chan;Kim, In-Soo;Min, Hyoung-Bok
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1862-1863
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    • 2007
  • Testing the analog/mixed-signal circuitry of a mixed-signal IC has become a difficult task. Offset error, gain error, Non-monotonic behavior, Differential Non-linearity(DNL) error, Integral Non-linearity(INL) error are important specifications used as test parameters for DAC. In this paper, we propose an efficient BIST structure for DAC testing. The proposed BIST adds the circuit which uses the capacitor and op-amp, and accomplishes a test.

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CMOS Front-End for a 5 GHz Wireless LAN Receiver (5 GHz 무선랜용 수신기의 설계)

  • Lee, Hye-Young;Yu, Sang-Dae;Lee, Ju-Sang
    • Proceedings of the KIEE Conference
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    • 2003.11c
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    • pp.894-897
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    • 2003
  • Recently, the rapid growth of mobile radio system has led to an increasing demand of low-cost high performance communication IC's. In this paper, we have designed RF front end for wireless LAN receiver employ zero-IF architecture. A low-noise amplifier (LNA) and double-balanced mixer is included in a front end. The zero-IF architecture is easy to integrate and good for low power consumption, so that is coincided to requirement of wireless LAN. But the zero-IF architecture has a serious problem of large offset. Image-reject mixer is a good structure to solve offset problem. Using offset compensation circuit is good structure, too. The front end is implemented in 0.25 ${\mu}m$ CMOS technology. The front end has a noise figure of 5.6 dB, a power consumption of 16 mW and total gain of 22 dB.

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A Cell-Network Type SC DC-DC Converter with Large Current Output

  • Eguchi, Kei;Ueno, Fumio;Zhu, Hongbing;Tabata, Toru;Tanoue, Takashi
    • Proceedings of the IEEK Conference
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    • 2002.07b
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    • pp.1121-1124
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    • 2002
  • In this paper, an IC realization of a cell-network type SC DC-DC converter is reported. To achieve small and low-cost realization, the converter is designed by using a 1.2 $\mu\textrm{m}$ CMOS technology. The CMOS implemented converter will be useful as a building block of various mobile equipments since step-up and step-down voltages can be provided at one time. Concerning the proposed DC-DC converter, SPICE simulatiorls are performed to investigate the characteristics of the circuit. The SPICE simulations show that, the efficiency of the simulated circuit is more than 95 %. From the layout design using a CAD tool, MAGIC, the VLSI chip is fabricated in the chip fabrication program of VLSI Design and Education Center(VDEC), the University of Tokyo with the collaboration by On-Semiconductor. The proposed circuit is integrable by a standard 1.2 $\mu\textrm{m}$ CMOS technology.

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An Integrated MIN Circuit Design of DTW PE for Speech Recognition (음성인식용 DTW PE의 IC화를 위한 MIN회로의 설계)

  • 정광재;문홍진;최규훈;김종교
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.15 no.8
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    • pp.639-647
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    • 1990
  • Dynamic time warp(DTW) needs for interative calculations and the design of PE cell suitable for the operations is very important. Accordingly, this paper aims at the real time recognition design which enables large dictionary hardware realization using DTW algorithm. The DTW PE cell is seperated into three large blocks. "MIN" is the one block for counting accumulated minimum distance, "ADD" block calculates these minimum distances, and "ABS" seeks for the absolute values to the total sum of local distances. We have accomplisehd circuit design and verification for the MIN blocks, and performed MIN layout and DRC(design rule check) using 3um CMOS N-Well rule base.ing 3um CMOS N-Well rule base.

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음성인식용 DTW PE의 IC화를 위한 ADD 및 ABS 회로의 설계

  • 정광재;문홍진;최규훈;김종교
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.15 no.8
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    • pp.648-658
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    • 1990
  • There are many methods for speed up counting in speech recongition. A multiple processing method is the one way to achieve the aim using systolic array. This arithmetic operation by the array is achieved pipelining skill. And the operation is multiprocessing by processing element(PE) that is incresing counting efficiencies. The DTW PE cell is seperated into three large blocks. "MIN" is the one block for counting accumulated minimum distance, "ADD" block calculated these minimum distances, and "ABS" seeks for the absolut values to the total sum of local distances. We have accomplished circuit design and verification about the "ADD" and "ABS" blocks, and performed total layout '||'&'||' DRC(design rule check) using 3um CMOS N-Well rule base.le check) using 3$\mu$m CMOS N-Well rule base.

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The dependence of NiSi for CMOS Technology on Surface Damage (CMOS 소자를 위한 NiSi의 surface damage 의존성)

  • Ji, Hee-Hwan;Bae, Mi-Suk;Lee, Hun-Jin;Oh, Soon-Young;Yun, Jang-Gn;Park, Sung-Hyung;Wang, Jin-Suk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.167-170
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    • 2002
  • The influence of Si surface damage on Ni-silicide with TiN Capping layer and the effect of $H_2$ anneal are characterized. Si surface is intentionally damaged using Ar Sputtering. The sheet resistance of NiSi formed on damaged silicon increased rapidly as Ar sputtering time increased. However, the thermal stability of Ni-Si on the damage silicon was more stable than that on at undamaged Si, which means that damaged region retards the formation of NiSi. It was shown that $H_2$ anneal and TiN capping is highly effective in reducing NiSi sheet resistance.

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CMOS true-time delay IC for wideband phased-array antenna

  • Kim, Jinhyun;Park, Jeongsoo;Kim, Jeong-Geun
    • ETRI Journal
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    • v.40 no.6
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    • pp.693-698
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    • 2018
  • This paper presents a true-time delay (TTD) using a commercial $0.13-{\mu}m$ CMOS process for wideband phased-array antennas without the beam squint. The proposed TTD consists of four wideband distributed gain amplifiers (WDGAs), a 7-bit TTD circuit, and a 6-bit digital step attenuator (DSA) circuit. The T-type attenuator with a low-pass filter and the WDGAs are implemented for a low insertion loss error between the reference and time-delay states, and has a flat gain performance. The overall gain and return losses are >7 dB and >10 dB, respectively, at 2 GHz-18 GHz. The maximum time delay of 198 ps with a 1.56-ps step and the maximum attenuation of 31.5 dB with a 0.5-dB step are achieved at 2 GHz-18 GHz. The RMS time-delay and amplitude errors are <3 ps and <1 dB, respectively, at 2 GHz-18 GHz. An output P1 dB of <-0.5 dBm is achieved at 2 GHz-18 GHz. The chip size is $3.3{\times}1.6mm^2$, including pads, and the DC power consumption is 370 mW for a 3.3-V supply voltage.

Compact 2.5 Gb/s Burst-Mode Receiver with Optimum APD Gain for XG-PON1 and GPON Applications

  • Kim, Jong-Deog;Le, Quan;Lee, Mun-Seob;Yoo, Hark;Lee, Dong-Soo;Park, Chang-Soo
    • ETRI Journal
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    • v.31 no.5
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    • pp.622-624
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    • 2009
  • This letter presents a compact 2.5 Gb/s burst-mode receiver using the first reported monolithic amplifier IC developed with 0.25 ${\mu}m$ SiGe BiCMOS technology. With optimum avalanche photodiode gain, the receiver module can obtain a fast response, high sensitivity and wide dynamic range, satisfying the overhead timing and various power specifications for a 2.5 Gb/s next-generation passive optical network (PON), as well as a legacy 1.25 Gb/s PON in the upstream.