• Title/Summary/Keyword: CMOS 믹서

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Design of 77-GHz CMOS Mixer for Long Range Radar Application of Automotive Collision Avoidance (차량 충돌 방지 장거리 레이더용 77-GHz CMOS 믹서 설계)

  • Kim, Shin-Gon;Choi, Seong-Kyu;Kim, Cheol-Hwan;Sung, Myeong-U;Lim, Jae-Hwan;Rastegar, Habib;Choi, Geun-Ho;Ryu, Jee-Youl;Noh, Seok-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2014.05a
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    • pp.771-773
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    • 2014
  • 본 논문에서는 장거리 레이더용 차량 충돌 방지 77-GHz CMOS 믹서를 제안한다. 이러한 회로는 2볼트 전원전압에서 동작하며, 저 전압 전원 공급에서도 높은 변환 이득과 낮은 변환 손실 및 낮은 잡음지수를 가지도록 설계되어 있다. 제안한 회로는 TSMC $0.13{\mu}m$ 혼성신호/고주파 CMOS 공정($f_T/f_{MAX}=120/140GHz$)으로 설계하였다. 전체 칩 면적을 줄이기 위해 수동형 인덕터 대신 전송선(Transmission Line) 을 이용하였다. 본 논문에서 설계한 믹서는 약 5.2dB의 우수한 변환이득 특성과 2.1dBm의 우수한 IIP3 특성을 보였다.

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Design of Double Bond Down Converting Mixer Using Embeded Balun Type (발룬 내장형 이중대역 하향 변환 믹서 설계 및 제작)

  • Lee, Byung-Sun;Roh, Hee-Jung;Seo, Choon-Weon
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.22 no.6
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    • pp.141-147
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    • 2008
  • This paper describes the design of frequency down converting Mixer in the receiver to use compound semiconductor and CMOS product process. The basic theory and structure of frequency down converting Mixer is surveyed, and we design mixer circuit with active balun which use the compound semiconductor and CMOS process. This mixer convert a single ended signal to differential signal at input port of RF and LO instead of matching circuit to get dual band balanced mixer structure and characteristic broadband. This designed mixer has a conversion gain $-1{\sim}-6[dB]$ at $2{\sim}6[GHz]$ bandwidths. However, the simulation of the designed mixer with active balun has the result of a 7[dB] conversion gain for -2[dBm] LO input power and -10[dBm] input P1[dB] at 5.8[GHz].

A 3.3V 30mW 200MHz CMOS upconversion mixer using replica transconductance (복제 V-I 변환기를 이용한 3.3V 30mW 200MHz CMOS 업 컨버젼 믹서)

  • Kwon, Jong-Kee;Kim, Ook;Oh, Chang-Jun;Lee, Jong-Ryul;Song, Won-Chul;Kim, Kyung-Soo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.22 no.9
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    • pp.1941-1948
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    • 1997
  • In this paper, the power efficient linear upconversion mixer which is a functional circuit in transmit path of intermediate frequency(IF) part of Code Division Multiple (CDMA) cellular phone was explained. In generally, the low CMOS devices limits the implementation of upconversion mixer especially for lower loads. Using replica transconductor, the linear range is extended up to the limit. Thiscircuit was imprlemented using $0.8{\mu}\textrm{m}$ N-well CMOS technology with 2-poly/2-metal. The active area of chip is $0.53mm{\times}0.92mm$. The power consumption is 30mW with 3.3V suply voltage. The 1dB conpression characteristics is -27.3dB with $25{\Omega}$. load and being applied by 2-tone input signal. The mixer operates properly above 200MHz.

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Design of 24GHz CMOS Mixer with High Conversion and Low Power (고 변환이득 및 저 전력 24GHz CMOS 믹서 설계)

  • Kim, Shin-Gon;Choi, Seong-Kyu;Kim, Cheol-Hwan;Sung, Myeong-U;Rastegar, Habib;Choi, Geun-Ho;Ryu, Jee-Youl;Noh, Seok-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2014.10a
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    • pp.780-781
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    • 2014
  • 본 논문에서는 차량 추돌 방지 단거리 레이더용 고 변환이득 및 저전력 24GHz CMOS 믹서를 제안한다. 이러한 회로는 2볼트 전원전압에서 동작하며, 저 전압 전원 공급에서도 높은 변환 이득과 낮은 잡음지수를 가지도록 설계되어 있다. 제안한 회로는 TSMC $0.13{\mu}m$ 혼성신호/고주파 CMOS 공정($f_T/f_{MAX}=120/140GHz$)으로 설계하였다. 전체 칩 면적을 줄이기 위해 실제 수동형 인덕터 대신 전송선을 이용하였다. 제안한 회로는 최근 발표된 연구결과에 비해 가장 높은 10.96dB의 변환이득, 7.6dBm의 IIP3를 보였고, 가장 적은 5mW의 소비전력 및 $0.2{\times}0.2m^2$의 칩 크기 특성을 보였다.

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Design of 1.9GHz CMOS RF Up-conversion Mixer (1.9GHz CMOS RF Up-conversion 믹서 설계)

  • Choi, Jin-Young
    • Journal of IKEEE
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    • v.4 no.2 s.7
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    • pp.202-211
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    • 2000
  • Utilizing the circuit simulator SPICE, we designed a 1.9GHz CMOS up-conversion mixer and explained in detail the simulation procedures including device modeling for the circuit design. Since the measured characteristics of the chip fabricated using the $0.5{\mu}m$ standard CMOS process had shown a big deviation from the characteristics expected by the original simulations, we tried to figure out the proper reasons for the discrepancies. Simulations considering the discovered problems in the original simulations have shown the validity of the simulation method tried for the design. We have shown that the utilized standard CMOS process can be used for the implementation of the chip characteristics similar to those of the equivalent chip fabricated using the GaAs MESFET process.

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Design of a CMOS Base-Band Analog Receiver for Wireless Home Network (무선 홈 네트워크용 CMOS 베이스밴드 아날로그 수신단의 설계)

  • 최기원;송민규
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.2
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    • pp.111-116
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    • 2003
  • In this paper, a CMOS baseband analog receiver for wireless home network is discussed. It is composed of a Gilbert type mixer, an Elliptic 6th order 1ow pass filter, and a 6-bit A/D converter. The main role of the mixer is generating a mixed analog signal between the 200MHz output signal of CMOS RF stage and the 199MHz local oscillator. After the undesired high frequency component of the mixed signal comes out. Finally, the analog signal is converted into digital code at the 6-bit A/D converter, The proposed receiver is fabricated with 0.25${\mu}{\textrm}{m}$ 1-poly 5-metal CMOS technology, and the chip area is 200${\mu}{\textrm}{m}$ X1400${\mu}{\textrm}{m}$. the receiver consumes 130㎽ at 2.5V power supply.

A 1.8GHz Low Voltage CMOS RF Down-Conversion Mixer (1.8GHz 대역의 저전압용 CMOS RF하향변환 믹서 설계)

  • 김희진;이순섭;김수원
    • Proceedings of the IEEK Conference
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    • 2000.06e
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    • pp.61-64
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    • 2000
  • This paper describes a RF Down-Conversion Mixer for mobile communication systems. This circuit achieves low voltage operation and low power consumption by reducing stacked devices of conventional gilbert cell mixer. In order to reduce stacked devices, we use source-follower structure. The proposed RF Down-Conversion mixer operates up to 1.85GHz at 1.5V power supply with 0.25um CMOS technology and consumes 2.2mA.

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A 900 MHz ZigBee CMOS RF Transceiver Using Switchless Matching Network (무스위치 정합 네트워크를 이용한 900 MHz ZigBee CMOS RF 송수신기)

  • Jang, Won Il;Eo, Yun Seong;Park, Hyung Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.8
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    • pp.610-618
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    • 2017
  • This paper presents a 868/915 MHz CMOS RF transceiver for the ZigBee application. Using a switchless matching network, the off chip switch is removed to achieve the low cost RF transceiver, and by the elimination of the switch's insertion loss we can achieve the benefits for the RF receiver's noise figure and transmitter's power efficiency at the given output power. The receiver is composed of low-noise amplifier, mixer, and baseband analog(BBA) circuit. The transmitter is composed of BBA, mixer, and driver amplifier. And, the integer N type frequency synthesizer is designed. The proposed ZigBee RF full transceiver is implemented on the $0.18{\mu}m$ CMOS technology. Measurement results show that the maximum gain and the noise figure of the receiver are 97.6 dB and 6.8 dB, respectively. The receiver consumes 32 mA in the receiver mode and the transmitter 33 mA in the transmission mode.

Implementation of a CMOS RF Transceiver for 900MHz ZigBee Applications (ZigBee 응용을 위한 900MHz CMOS RF 송.수신기 구현)

  • Kwon, J.K.;Park, K.Y.;Choi, Woo-Young;Oh, W.S.
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.43 no.11 s.353
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    • pp.175-184
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    • 2006
  • In this paper, we describe a 900MHz CMOS RF transceiver using an ISM band for ZigBee applications. The architecture of the designed rx front-end, which consists of a low noise amplifier, a down-mixer, a programmable gain amplifier and a band pass filter. And the tx front-end, which consists of a band pass filter, a programmable gain amplifier, an up-mixer and a drive amplifier. A low-if topology is adapted for transceiver architecture, and the total current consumption is reduced by using a low power topology. Entire transceiver is verified by means of post-layout simulation and is implemented in 0.18um RF CMOS technology. The fabricated chip demonstrate the measured results of -92dBm minimum rx input level and 0dBm maximum tx output level. Entire power consumption is 32mW(@1.8VDD). Die area is $2.3mm{\times}2.5mm$ including ESD protection diode pads.

Design of 24GHz Mixer for Automotive Collision Avoidance Radar (차량 충돌 예방 레이더 시스템-온-칩용 24GHz 믹서 설계)

  • Kim, Cheol-Hwan;Kim, Shin-Gon;Lee, Jae-Hwan;Ryu, Jee-Youl;Noh, Seok-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.05a
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    • pp.766-767
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    • 2013
  • 본 논문에서는 차량 충돌 예방 레이더 시스템-온-칩용 24GHz 믹서(Mixer)를 제안한다. 이러한 회로는 24GHz의 동작주파수를 가지며, Gilbert 셀 구조로 구성된다. 이러한 회로는 TSMC $0.13{\mu}m$ 혼성신호/고주파 CMOS 공정 ($f_T/f_{MAX}=120/140GHz$)으로 설계되어 있다. 제안한 회로는 10.96dB의 변환이득으로 최근 발표된 연구결과 중 가장 우수한 수치를 보였다. 또한 7.62dBm의 우수한 IIP3의 특성과 -43.64dB의 입력/출력 반사손실 (S11/S22) 및 -49.3dB의 LO-RF간 격리 특성 (S12)으로 기존 연구결과 중 가장 우수한 결과를 각각 보였다.

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