• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.12
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• pp.13-22
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• 1998

In this paper, we propose a high-performance BICS(built-in current sensor) which is fabricated in 0.8${\mu}{\textrm}{m}$ single-poly two-metal process for IDDQ testing of CMOS VLSI circuit. The CUT(circuit under test) is 4-bit full adder with a bridging fault. Using two nMOSs that have different size, two bridging faults that have different resistance values are injected in the CUT. And controlling a gate node, we experimented various fault effects. The proposed BICS detects the faulty current at the end of the clock period, therefore it can test a CUT that has a much longer critical propagation delay time and larger area than conventional BICSs. As expected in the HSPICE simulation, experimental results of fabricated chip demonstrated that the proposed BICS can exactly detect bridging faults in the circuit.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.55-60
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• 2007

This paper presents a compact double resolution scheme for the optical angle sensor based on 1-dimensional CMOS photodiode pixel array. All the pixels are divided into the even pixel and the odd pixel groups. The winner take all circuit is provided for each group. The proposed interpolation scheme increases the resolution by 2 from the winner addresses and winner values. The interpolation scheme can be implemented without any additional pixels or winner take all circuits and require only a comparator and a XOR gate. The proposed pixel array chip that has 336 photodiode pixels with $5.6{\mu}m$ pitch was fabricated with $0.35{\mu}m$ CMOS process and was assembled with a $50{\mu}m$ slit to form an angle sensor. The measured resolution is $0.1{\circ}$ with the proposed interpolation. The chip consumes 35mW and provides 8k samples per second.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.11
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• pp.834-841
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• 2018

A power amplifier for subgigahertz short-range wireless communication using $0.18-{\mu}m$ CMOS technology is presented. It is designed as a differential structure to form easily a virtual ground node, to increase output power, and to design a cascode structure to prevent breakdown. The transistor gate width was determined to maximize the output power and power-added efficiency(PAE), and the balun was optimized through electromagnetic simulation to minimize the loss caused by the matching network. This power amplifier had a gain of more than 49.5 dB, a saturation power of 26.7 dBm, a peak PAE of 20.7 % in the frequency range of 860 to 960 MHz, and a chip size of $2.14mm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.55-55
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• 2001

개의 N과 P채널 EEPROM을 이용하여 A/D 변환기를 설계하였다. 프로그래밍 모드에서 EEPROM의 선형적 저장능력을 관찰하기 위해 MOSIS의 1.2㎛ double-poly CMOS 공정을 이용하여 셀이 제작되었다. 그 결과 1.25V와 2V구간에서 10㎷ 미만의 오차 내에서 셀이 선형적으로 프로그램 되는 것을 보았다. 이러한 실험 결과를 이용하여 프로그램 가능한 A/D 변환기의 동작이 Hspice에서 시뮤레이션 되었으며, 그 결과 A/D 변환기가 37㎼의 전력을 소모하고 동작주파수는 333㎒ 정도인 것으로 관찰되었다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.1-1
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• 2001

2차원 소자 시뮬레이터를 사용하는 혼합모드 과도해석 방법을 제시하여, NMOS 트랜지스터를 ESD 보호용 소자로 사용하는 CMOS 칩에서의 충전소자모델(CDM) ESD 현상에 대한 분석을 시도하였다. 과도해석 결과의 분석을 통해 CDM 방전 경우 소자 파괴에 이르는 미케니즘에 대해 상세히 설명하였고 충전전기의 극성에 따른 방전 특성의 차이점도 비교 분석하였다. CDM 방전에서 가장 문제가 되는 입력버퍼의 게이트 산화막 파괴문제와 관련하여 배선저항 값의 변화에 의한 영향을 검토하였고, 입력버퍼회로 보호용 NMOS 트랜지스터의 추가에 의한 방전 특성의 변화에 대해 조사하였다.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.41-44
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• 2000

Ultra large scale integrated circuit(ULSI) & complementary metal oxide semiconductor(CMOS) circuits require gate electrode materials such as meta] silicides, titanium-silicide for gate oxides. Many previous authors have researched the improvements sub-micron gate oxide quality. However, little has been done on the electrical quality and reliability of ultra thin gates. In this research, we recommend novel shallow trench isolation structure and two step TiSi$_{2}$ formation for sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.947-950
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• 2003

본 논문에서는 고속 적외선 무선 데이터통신(IrDA) 에 사용되는 트랜스임피던스 증폭기(Transimpedance Amplifier)를 설계하였다. 트랜스임피던스 증폭기는 잡음을 최소화하기 위해 PMOS 차동 구조로 설계하였으며 입력과 출력의 피드백을 통해 주위의 빛에 의해 발생되는 photocurrent 에 의한 DC 옵셋을 제거하였다 또한 공통 게이트(CG)와 Regulated Cascode Circuit (RGC)을 추가하여 대역폭(Bandwidth)을 향상시켰다. 설계한 회로는 0.25 um CMOS 공정을 이용하였으며 트랜스임피던스 이득은 200 MHz의 대역폭에서 10 KΩ (80 dBΩ )이다. 전체 전력 소비는 18 mW이다.

• Proceedings of the Korea Multimedia Society Conference
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• 2002.05c
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• pp.44-48
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• 2002

본 논문에서는 한국형 디지털 서명 표준인 KCDSA에서 사용할 목적으로 개발된 국내 해쉬 함수 표준인 HAS-160 알고리즘을 VLSI 설계하였다. 하나의 단계연산을 하나의 클럭에 동작하고 단계연산의 핵심이 되는 4개의 직렬 2/sup 3/ 모듈러 가산기를 CSA(Carry Save Adder)로 구현하여 캐리 전파시간을 최소로 하고 HAS-160 해쉬 알고리즘의 특징인 메시지 추가생성을 사전에 계산하여 지연시간을 줄이는 설계를 하였다. 설계된 해쉬 프로세서를 0.25 urn CMOS 스탠다드 셀 라이브러리에서 합성한 결과 총 게이트 수는 약 21,000개이고 최대 지연 시간은 5.71 ns로 최대 동작주파수 약 175 MHz서 약 1,093 Mbps의 성능을 얻을 수 있었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.3
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• pp.479-485
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• 2006

The double gate(DG) MOSFET is a promising candidate to further extend the CMOS scaling and provide better control of short channel effect(SCE). DGMOSFETs, having ultra thin undoped Si channel for SCEs control, ale being validated for sub-20nm scaling. A novel analytical transport model for the subthreshold mode of DGMOSFETs is proposed in this paper. The model enables analysis of short channel effect such as the subthreshold swing(SS), the threshold voltage roil-off$({\Delta}V_{th})$ and the drain induced barrier lowering(DIBL). The proposed model includes the effects of thermionic emission and quantum tunneling of carriers through the source-drain barrier. An approximative solution of the 2D Poisson equation is used for the distribution of electric potential, and Wentzel-Kramers-Brillouin approximation is used for the tunneling probability. The new model is used to investigate the subthreshold characteristics of a double gate MOSFET having the gate length in the nanometer range $(5-20{\sim}nm)$ with ultra thin gate oxide and channel thickness. The model is verified by comparing the subthreshold swing and the threshold voltage roll-off with 2D numerical simulations. The proposed model is used to design contours for gate length, channel thickness, and gate oxide thickness.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.75-87
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• 2010

For two input-protection schemes suitable for RF ICs utilizing the thyristor and diode protection devices, which can be fabricated in standard CMOS processes, we attempt an in-depth comparison on HBM ESD robustness in terms of lattice heating inside protection devices and peak voltages developed across gate oxides in input buffers, based on DC, mixed-mode transient, and AC analyses utilizing a 2-dimensional device simulator. For this purpose, we construct an equivalent circuit for an input HBM test environment of a CMOS chip equipped with the input ESD protection circuits, which allows mixed-mode transient simulations for various HBM test modes. By executing mixed-mode simulations including up to six active protection devices in a circuit, we attempt a detailed analysis on the problems, which can occur in real tests. In the procedure, we suggest to a recipe to ease the bipolar trigger in the protection devices and figure out that oxide failure in internal circuits is determined by the junction breakdown voltage of the NMOS structure residing in the protection devices. We explain the characteristic differences of two protection schemes as an input ESD protection circuit for RF ICs, and suggest valuable guidelines relating design of the protection devices and circuits.