• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.226-230
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• 2018

Pure $BiFeO_3$ (BFO) and codoped $Bi_{0.9}A_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (A=Eu, Dy) thin films were prepared on Pt(111)/Ti/$SiO_2$/Si(100) substrates by chemical solution deposition. The remnant polarizations (2Pr) of the $Bi_{0.9}Eu_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BEFZO) and $Bi_{0.9}Dy_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BDFZO) thin films were about 36 and $26{\mu}C/cm^2$ at the maximum electric fields of 900 and 917 kV/cm, respectively, at 1 kHz. The codoped BEFZO and BDFZO thin films showed improved electrical properties, and leakage current densities of 3.68 and $1.21{\times}10^{-6}A/cm^2$, respectively, which were three orders of magnitude lower than that of the pure BFO film, at 100 kV/cm.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2265-2269
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• 2011

1 kV high-voltage GaN Schottky diode is realized using GaN-on-Si template by oxidizing Ni-Schottky contact. The Auger electron spectroscopy (AES) analysis revealed the formation of $NiO_x$ at the top of Schottky contact. The Schottky contact was changed to from Ni/Au to Ni/Ni-Au alloy/Au/$NiO_x$ by oxidation. Ni diffusion into AlGaN improves the Schottky interface and the trap-assisted tunneling current. In addition, the reverse leakage current and the isolation-leakage current are efficiently suppressed by oxidation. The isolation-leakage current was reduced about 3 orders of magnitudes. The reverse leakage current was also decreased from 2.44 A/$cm^2$ to 8.90 mA/$cm^2$ under -100 V-biased condition. The formed group-III oxides ($AlO_x$ and $GaO_x$) during the oxidation is thought to suppress the surface leakage current by passivating surface dangling bonds, N-vacancies and process damages.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2007.11a
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• pp.77-81
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• 2007

Pentacene was dissolved in N-methyspyrrolidone (NMP) and mixed with poly(3,4-ethylenedioxythiophene), poly(styrenesulfonate) (PEDOT:PSS). The solution color changed from deep purple to intense yellow. As the dissolution time increased, visible absorption decreased and ultraviolet (UV) absorption increased. PEDOT:PSS or Pentacene-PEDOT:PSS was spin-coated to control the layer thickness. Three-layered Schottky diodes consisting of Al, PEDOT:PSS or PEDOT:PSS-pentacene, and Au with thickness of 300nm, respectively, were fabricated. The current densities of $4.8{\mu}A/cm^2$ at 2.5MV/m and $660{\mu}A/cm^2$ at 1.9MV/m were obtained for the Au/PEDOT:PSS/Al and Au/Pentacene-PEDOT:PSS/Al Schottky diodes, respectively. The current density of the Schottky diode was enhanced by about two orders of magnitude by doping pentacene to PEDOT:PSS.

• Journal of Korean Society on Water Environment
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• v.30 no.1
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• pp.68-79
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• 2014

There are marked differences in climate condition between east-facing slopes and west-facing slopes in Mt. Seorak (1,708 m). This study was conducted to find out the differences of benthic macroinvertebrate communities between both slopes of Mt. Seorak. Quantitative (Surber net; $30cm{\times}30cm$, mesh: 1mm) and qualitative (Hand net; mesh: 1mm) samplings ware carried out seasonally in each site which had 100-meter-high difference from November 2010 to November 2011. Most of the survey sites showed sound environmental conditions because they were located in the protection area of the national park. The benthic macroinvertebrates collected from all survey sites were composed of 158 species, 62 families, 17 orders, 7 classes and 5 phyla. DCA (Detrended Correspondence Analysis) ordination based on the abundance of benthic mactoinvertebrates showed that altitude was a major factor governing the structure of benthic macroinvertebrate community. There was no significant difference of the communities between both slopes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.208-209
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• 2008

Ni/Ti/Al multilayer system was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Compared with conventional process using Ni, Ni/Ti/Al contact shows perfect ohmic behavior, and possesses much lower contact resistance of about $2.5\times10^{-4}\Omega{\cdot}cm^2$ after $930^{\circ}C$ RTA, which is about 2 orders of magnitude smaller than that of Ni contact. Contact resistance gradually increased as the RTA temperature was lowered in the range of 840 ~ $930^{\circ}C$, and about $3.4\times10^{-4}\Omega{\cdot}cm^2$ was obtained at the lowest RTA temperature of $840^{\circ}C$. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance.

• Korean Journal of Microbiology
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• v.9 no.2
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• pp.47-54
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• 1971

This study is concerned to the microbial population and its effects in the fish paste products. Experimental results were summarized as following orders ; 1) The number of bacteria in accordance with raw materials and coocking site waas known to as ; Wheat flor - $7.0{\times}10^8$/gram , Brayed fish meat - $2.0{\times}10^7$/gram, Cooking table - $6.1{\times}10^6$/$1.54cm^2$Chopped fish meat -$4.1{\times}10^6$/gram, Wooden plate - $5.5{\times}10^5$/218.32cm, Sodium chloride - $8.8{\times}10^4$/gram, Wheat starch - $4.5{\times}10^4$/gram, Fish meat - $2.3{\times}10^4$/gram. However, there were a few bacterial numbers less than 300 per gram of raw materials, such as monosodium glutamate, tap water, sugar, saccharine and eggs. 2) Bacterial population in the raw materials might be changed according to the conditions of preservation. 3) When the heat tratment is used for the preservation, the thermal effects were rarely found at the interior part of fish paste products. Conduction of heat into the interior part dose not rise about $84^{\circ}C$ and the survival of bacteria could be possible under the condition. Therefore, cooking being used requires further studies. 4) Number of bacteria in the fish paste products sold in the market was higher on April and May than those on June. Especially on June, the number of bacteriz in the interior part were found higher than those in the exterior part of the products.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.383-387
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• 2002

N-channel metal-ferroelectric-insulator-semiconductor field-effect-transistors (MFISFET's) by using $SrBi_2Ta_2O_9$/Silicon Nitride/Si (100) structure were fabricated. The fabricated devices exhibit comfortable memory windows, fast switching speeds, good fatigue resistances, and long retention times that are suitable for advanced ferroelectric memory applications. The estimated switching time and polarization ($2P_r$) of the fabricated FET measured at applied electric field of 376 kV/cm were less than 50 ns and about 1.5 uC/$\textrm{cm}^2$, respectively. The magnitude of on/off ratio indicating the stored information performance was maintained more than 3 orders until 3 days at room temperature. The $I_DV_G$ characteristics before and after being subjected to $10^11$ cycles of fatigue at a frequency of 1 MHz remained almost the same except a little distortion in off state.

• Journal of the Korean Solar Energy Society
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• v.39 no.1
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• pp.33-40
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• 2019

Al-doped ZnO (AZO) thin films were synthesized on Si(100) wafers via plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) method using diethyl zinc (DEZ) and N-methylpyrrolidine alane (MPA) as precursors. Effects of Al/Zn mixing ratio, plasma power on the surface morphology, crystal structure, and electrical property were investigated with SEM, XRD and 4-point probe measurement respectively. Growth rate of the film decreased slightly with increasing the Al/Zn mixing ratio, however electrical property was enhanced and resistivity of the film decreased greatly about 2 orders from $9.5{\times}10^{-1}$ to $8.0{\times}10^{-3}{\Omega}cm$ when the Al/Zn mixing ratio varied from 0 to 9 mol%. XRD analysis showed that the grain size increased with increasing the Al/Zn mixing ratio. Growth rate and electrical property were enhanced in a mild plasma condition. Resistivity of AZO film decreased down to $7.0{\times}10^{-4}{\Omega}cm$ at an indirect plasma of 100 W condition which was enough value to use for the transparent conducting oxide (TCO) material.

• Journal of Korean Society of Forest Science
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• v.89 no.3
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• pp.287-296
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• 2000

This study was carried out to examine and compare the changes of inhabitation of soil microarthropoda after forest fire between different types of forest; i.e. the coniferous forest (Mt. Chocdae) and the broad-leaved forest (Samsinbong in Mt. Chiri). The individuals of soil microarthropoda found at the burned and unburned areas of Samsinbong and Mt. Chocdae were 12 orders in 5 classes, and individuals of Insecta and Arachnida 98% of them. In respect of classification groups, Collembola order was high at the burned and unburned areas of coniferous forest, while Acari order was high at the broad-leaved area. When classified by soil depth, the total number of soil microarthropoda individuals inhabiting at Samsinbong, the broad-leaved forest, was 25,342 and 37,350 at 1~5cm depth of burned and unburned areas respectively, while at 5~10cm depth the number turned out 9,722 and 15,906. Soil microarthropoda individuals of unburned area was 1.6 times higher than for the burned area. At the coniferous forest, the number marked 31,665 and 51,431, respectively for 1~5cm depth of burned and unburned area, and 10,189 and 13,202 for 5~10cm depth. Here also, the number for the unburned area was examined to be 1.4 times higher than for the burned area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.111-114
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• 1995

This paper describes the imidization of PAAS(polyamic acid alkylamine salts) Langmuir-Blodgett (LB) films and the electrical properties of PAAS and polyimide(PI) LB films, The imidization conditons were investigated by TGA(Thermal Gravi-tational Analysis). FT-IR and UV/ visible absorption spectra. A thermal imidiczation was peformed at 300$^{\circ}C$ for 1 hour. The electrical properties of the PAAS and polymide LB films were measured by current-voltate(L-V) characteristics It shows that the electrical condcutivity of PL LB films is about 10 $\^$-15/S/cm which is two orders of magnetiude lower than that of the PAAS LB films A Schottky effect was also observed in both films.