• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.46-50
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• 2005

BST thin films were etched with inductively coupled CF$_{4}$/(Cl$_{2}$+Ar) plasmas. The etch characteristics of BST thin films as a function of CF$_{4}$/(Cl$_{2}$+Ar) gas mixtures were analyzed using optical emission spectroscopy (OES) and Langmuir probe. The BST films in CF$_{4}$/Cl$_{2}$/Ar plasma is mainly etched by the formation of metal chlorides which depends on the emission intensity of the atomic Cl and the bombarding ion energy. The maximum etch rate of the BST thin films was 53.6 nm/min because small addition of CF$_{4}$ to the Cl$_{2}$/Ar mixture increased chemical and physical effect. A more fast etch rate of BST films can be obtained by increasing the DC bias and the RF power, and lowering the working pressure.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.119-119
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.169-169
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• 2002

• Journal of the Korean institute of surface engineering
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• v.34 no.1
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• pp.10-16
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• 2001

Recently plasma etching research has been focused on the metal surfaces in the nuclear industry. In this study, surface etching reaction of metallic Co and Mo, principal contaminants in the spent nuclear components, in CF$_4$/O$_2$, gas plasma has been experimentally investigated to look into the applicability and the effectiveness of the technique for the surface decontamination. Experimental variables are $CF_4$/$O_2$ ratio and substrate temperature between 29$0^{\circ}C$ and 38$0^{\circ}C$. Experimental results Show that the optimum gas composition is 80%CF$_4$-20%$O_2$ and the metallic Co and Mo are etched out well enough in the temperatures range. Cobalt starts to be etched above $350^{\circ}C$ and the etching rate increases with increasing substrate temperature. Maximum rate achieved at 38$0^{\circ}C$ under 220 W r.f. plasma power is 0.06 $\mu\textrm{m}$/min. On the other hand, the metallic Mo is etched easily even at low temperature and the reaction rate drastically increases as the substrate temperature goes up. Highest rate obtained under the same conditions is $1.9\mu\textrm{m}$/min. OES (Optical Emission Spectroscopy) analysis reveals that the intensities of F atom and CO molecule reach maximum at the optimum gas composition, which demonstrates that the principal reaction mechanism is fluorination and/or carbonyl reaction. It is confirmed, therefore, that dry processing technique using reactive plasma is quite feasible and applicable for the decontamination of surface-contaminated parts or equipments.

• Membrane Journal
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• v.20 no.2
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• pp.106-112
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• 2010

This study deals with the surface fluorination of poly(phenylene oxide) (PPO) with the direct contact of 100 ppm fluorine gas. To characterize the surface fluorinated membranes, the contac angle measurement, X-ray photoelectron microscopy analysis and the gas permeation experiments were performed. As the fluorination time increases, the hydrophobicity of membrane surfaces is increased by the surface characterization. In general, as expected, the overall gas permeability was reduced. Typically, the permeability reduction of 33% for nitrogen, 23% for oxygen and 3% for carbon dioxide were observed when the membranes were exposed in 100 ppm environment for 60 min., meanwhile the selectivity was increased from 3.92 to 4.47 for $O_2/N_2$ and 18.09 to 25.4 for $O_2/N_2$, respectively.

• Membrane Journal
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• v.22 no.1
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• pp.23-34
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• 2012

In this study, we investigated the permeation property of single gases ($N_2$, $O_2$, $SF_6$, $CF_4$ through hollow fiber polymeric membrane (PSF, PC, PI) as a function of pressure and temperature to decide operating condition for $SF_6$ gas separation process. The results showed the gas permeation varied differentlydepending on the properties of gases and membrane. When permeance of each gases was represented as a function of temperature and pressure in 3 dimensional space, the surface of permeance was shown approximately flat. Thus, we established permeance models with forms of first-and second-order polynomial. These two models showed high goodness of fit. This indicates that the two polynomial models have enough applicability to predict the gas separation process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.21-25
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• 2001

In this study, recovery of plasma etching· damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of $Cl_2/CF_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450 $\AA$/min at 30% additive Ar into $(Cl_2(80%)+CF_4 (20%))$ and 1100 $\AA$/min at 10% additive $O_2$ into $C(Cl_2(80%)+CF_4(20%))$. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of $Ti_xO_y$ is recovered by $O_2$ recombination during rapid thermal annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.21-25
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• 2001

In this study, recovery of plasma etching damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of Cl$_2$/CF$_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450$\AA$/min at 30% additive Ar into (Cl$_2$(80%)+CF$_4$ (20%)) and 1100$\AA$/min at 10% additive $O_2$ into C(Cl$_2$(80%)+CF$_4$ (20%)). In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of Ti$_{x}$O$_{y}$ is recovered by $O_2$ recombination during rapid thermal annealing process.s.s.

• Membrane Journal
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• v.20 no.3
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• pp.249-258
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• 2010

In this study, we tried to observe the permeation on the single $O_2$, $CF_4$ and $SF_6$ gas using a PSF (polysulfone), PC (tetra-bromo polycarbonate) and PI (polyimide) hollow fiber membranes. We also observed the permselectivity on the $O_2/SF_6$ and $CF_4/SF_6$. According to the results of single gases permeation for different pressures, PSF membrane has the highest $O_2$ permeation of 37.5 GPU and PC membrane has the highest $SF_6$ permeation of 2.7 GPU and the highest $CF_4$ permeation of 2.5 GPU at 1.1 MPa. According to the results of single gases permeation for different temperatures, PSF membrane has the highest permeation of $O_2$ at $45^{\circ}C$ and PC membrane has the highest permeation of $SF_6$ and $CF_4$ at $25^{\circ}C$. From the result of $O_2/SF_6$ and $CF_4/SF_6$ permselectivity for different pressures and temperature, the highest permeation and the lowest permselectivity were observed in the PSF and PC membrane. On the contrary, the lowest permeation and the highest permselectivity was observed in the PI membrane.

• Nuclear Engineering and Technology
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• v.35 no.6
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• pp.507-514
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• 2003

Recently dry decontamination/surface-cleaning technology using plasma etching has been focused in the nuclear industry. In this study, the applicability of this new dry processing technique are experimentally investigated by examining the etching reaction of $UO_2$, Co, and Mo in r.f. plasma with the etchant gas of $CF_4/O_2$ mixture. $UO_2$ is chosen as a representing material for uranium and TRU (TRans-Uranic) compounds while metallic Co and Mo are selected because they are the principal contaminants in the used metallic nuclear components such as valves and pipes made of stainless steel or inconel. Results show that in all cases maximum etching rate is achieved when the mole fraction of $UO_2\;in\;CF_4/O_2$ mixture gas is $20\%$, regardless of temperature and r.f. power. In case of $UO_2$, the highest etching reaction rate is greater than 1000 monolayers/min. at $370^{\circ}C$ under 150 W r.f. power which is equivalent to $0.4{\mu}m/min$. As for Co, etching reaction begins to take place significantly when the temperature exceeds $350^{\circ}C$. Maximum etching rate achieved at $380^{\circ}C\;is\;0.06{\mu}m/min$. Mo etching reaction takes place vigorously even at relatively low temperature and the reaction rate increases drastically with increasing temperature. Highest etching rate at $380^{\circ}C\;is\;1.9{\mu}m/min$. According to OES (Optical Emission Spectroscopy) and AES (Auger Electron Spectroscopy) analysis, primary reaction seems to be a fluorination reaction, but carbonyl compound formation reaction may assist the dominant reaction, especially in case of Co and Mo. Through this basic study, the feasibility and the applicability of plasma decontamination technique are demonstrated.