• Journal of The Korean Society of Inherited Metabolic disease
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• v.14 no.2
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• pp.174-177
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• 2014

Isolated methylmalonic acidemia (MMA) is a group of autosomal recessive inborn errors of metabolism caused by impaired activity of methylmalonyl-coenzyme A mutase (MCM). Mutations in the gene encoding MCM (MUT ) is the most common cause of isolated MMA. In this report, we identify an asymptomatic 15 days old female who had elevated C3-acylcarnitine (C3) in the newborn screening. Her serum homocysteine was normal and urine methylmalonic acid was increased that suggested isolated MMA. She was maintained on a low-protein diet and carnitine supplementation. At 3 months of age, she was still asymptomatic and had normal growth. We analyzed MUT gene mutations. Two heterozygote mutations in the MUT gene were identified including c.323G>A and c.1672+2T>C (IVS8(+2)T>C. Among these, c.1672+2T>C (IVS8(+2)T>C) have not been described previously.

• Bulletin of the Korean Chemical Society
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• v.23 no.6
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• pp.845-851
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• 2002

The synthesis of the intramolecular donor - stabilized silyl and germyl complexes of the type ($Cab^c.p) MMe_2X$ (2a:M=Si, X=Cl;2b;M= Ge, X=Cl;2e;M=Si,X=H) was achieved by the reaction of $LiCab^c,p$ (1) with $Me_2SiClX$ and $Me_2GeCl_2$ respectively. The intramolecular M←P interacion in 2a-2c is provided by $^1H$, $13^C.$, $31^P$ and $29^Si$ NMR spectroscopy. The salt elimination reactions of dichlorotetramethyldisilane and -digermane with 1 afforded the $bis(\sigma-carboranylphosphino)disilane$ and disgermane [$(Cab^C.P)MMe_2]_2(4a;M$ = Si;4b: M=Ge). The oxidative addition reaction of 4a-4b with $pd_2(dba)_3CHCl_3afforded$ the bis(silyl)-and bis(germyl)-palladium complexes. The chloro-bridged dipalladium complexes were obtained by the reaction of 2a-2b with $pd_2(dba)_3CHCl_3$ The crystal structures of 5a and 7b were determined by X-ray structural studies.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.229-238
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• 1996

The electromigration phenomena and the characterizations of the conductor lifetime (Time-To-Failure, TTF) in Al-1%Si thin film interconnections under D.C. and Pulsed D.C. conditions were investigated . Meander type test patterns were fabricated with the dimensions of 21080$mu \textrm{m}$ length, 3$\mu\textrm{m}$ width, 0.7$\mu\textrm{m}$ thickness and the 0.1$\mu\textrm{m}$/0.8$\mu\textrm{m}$($SiO_2$/PSG)dielectric overlayer. The current densities of $2 \times10^6 A/\textrm{cm}^2$ and $1 \times10^7 A/\textrm{cm}^2$ were stressed in Al-1%Si thin film interconnection s under a D.C. condition. The peak current densities of $2 \times10^6 A/\textrm{cm}^2$ and $1 \times10^7 A/\textrm{cm}^2$ were also applied under a Pulsed D.C. condition at frequencies of 200KHz, 800KHz, 1MHz, and 4MHz with the duty factor of 0.5. THe time-to-failure under a Pulsed D.C.($TTF_{pulsed D.C}$) was appeared to be larger than that under a D.C. condition. It was found that the TTF under both a D.C. and a Pulsed D.C. condition. It was found that the TTF under both a D.C. and a Pulsed D.C. condition largely depends upon the appiled current densities respectively . This can be explained by a relaxation mechanism view due to a duty cycle under a Pulsed D.C. related to the wave on off. The relaxation phenomena during the pulsed off period result in the decayof excess vacancies generated in the Al-1%Si thin film interconnections because of the electrical and mechanical stress gradient . Hillocks and voids formed by an electromigration were observed by using a SEM (Scanning Electron Microscopy).

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.396-400
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• 2003

A new synthesis process for nano laminating Ti$_3$SiC$_2$ has been developed using TiCx (x=0.67) and Si powder as starting materials by a reaction hot pressing. Bulk Ti$_3$SiC$_2$ was fabricated using a green body consisting of TiCx and Si by a hot pressing under the pressures of 25 MPa at 1420-1550 $^{\circ}C$ for 90 min. The synthesized Ti$_3$SiC$_2$ was consisting of only TiCx and Ti$_3$SiC$_2$. The relative density of sintered bulk Ti$_3$SiC$_2$ was increased as the hot pressing temperature was increased, which was mainly due to the increase in TiCx contents in synthesized Ti$_3$SiC$_2$. The synthesized Ti$_3$SiC$_2$ bulk was consisted of nano sized lamella structure of 20-100 nm in thickness. It was found that TiCx particles in Ti$_3$SiC$_2$ would increase the 3-point bending strength of synthesized Ti$_3$SiC$_2$ bulk. The maximum 3-P. bending strength of synthesized Ti$_3$SiC$_2$ bulk was more than 800 MPa. The Vickers hardness of synthesized Ti$_3$SiC$_2$bulk was as low as 5 Gpa, which was decreased with the indentation load. The quasi-plastic deformation behaviors were observed around indentation mark on Ti$_3$SiC$_2$.

• Journal of IKEEE
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• v.25 no.1
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• pp.1-9
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• 2021

In this paper, a 4H-SiC UMOSFET was studied which is suitable for high voltage and high current applications. In general, SiO2 is a material most commonly used as a gate dielectric material in SiC MOSFETs. However, since the dielectric constant value is 2.5 times lower than 4H-SiC, it suffers a high electric field and has poor characteristics in the SiO2/SiC junction. Therefore, the static characteristics of a device with high-k material as a gate dielectric and a device with SiO2 were compared using TCAD simulation. The results show BV decreased, VTH decreased, gm increased, and Ron decreased. Especially when the temperature is 300K, the Ron of Al2O3 and HfO2 decreases by 66.29% and 69.49%. and at 600K, Ron decreases by 39.71% and 49.88%, respectively. Thus, Al2O3 and HfO2 are suitable as gate dielectric materials for high voltage SiC MOSFET.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.217-222
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• 2010

Zirconium diboride (ZrB2) and mixed diboride of (Zr0.7Ta0.3)B2 containing 30 vol.% silicon carbide (SiC) composites were prepared by hot-pressing at $1800^{\circ}C$. XRD analysis identified the high crystalline metal diboride-SiC composites at $1800^{\circ}C$. The TaB2 addition to ZrB2-SiC showed a slight peak shift to a higher angle of 2-theta of ZrB2, which confirmed the presence of a homogeneous solid solution. Elastic modulus, hardness and fracture toughness were slightly increased by addition of TaB2. A volatility diagram was calculated to understand the oxidation behavior. Oxidation behavior was investigated at $1500^{\circ}C$ under ambient and low oxygen partial pressure (pO2~10-8 Pa). In an ambient environment, the TaB2 addition to the ZrB2-SiC improved the oxidation resistance over entire range of evaluated temperatures by formation of a less porous oxide layer beneath the surface SiO2. Exposure of metal boride-SiC at low pO2 resulted in active oxidation of SiC due to the high vapor pressure of SiO (g), and, as a result, it produced a porous surface layer. The depth variations of the oxidized layer were measured by SEM. In the ZrB2-SiC composite, the thickness of the reaction layer linearly increased as a function of time and showed active oxidation kinetics. The TaB2 addition to the ZrB2-SiC composite showed improved oxidation resistance with slight deviation from the linearity in depth variation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.487-490
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• 2010

This paper describes the elecrtical and optical characteristics of $N_2$ doped porous 3C-SiC films. Polycrystalline 3C-SiC thin films are anodized by $HF+C_2H_5OH$ solution with UV-LED exposure. The growth of in-situ doped 3C-SiC thin films on p-type Si (100) wafers is carried out by using APCVD (atmospheric pressure chemical vapor deposition) with a single-precursor of HMDS (hexamethyildisilane: $Si_2(CH_3)_6)$. 0 ~ 40 sccm $N_2$ was used for doping. After the growth of doped 3C-SiC, porous 3C-SiC is formed by anodization with $7.1\;mA/cm^2$ current density for anodization time of 60 sec. The average pore diameter is about 30 nm, and etched area is increased with $N_2$ doping rate. These results are attributed to the decrease of crystallinity by $N_2$ doping. Mobility is dramatically decreased in porous 3C-SiC. The band gaps of polycrystalline 3C-SiC films and doped porous 3C-SiC are 2.5 eV and 2.7 eV, respectively.

• Journal of Welding and Joining
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• v.18 no.2
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• pp.86-94
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• 2000

This study was performed to investigate types and formation mechanism of cracks in two Al alloy welds, A5083 and A7N01 spot-welded by pulse Nd : YAG laser, using SEM, EPMA and Micro-XRD. In the weld zone, three types of crack were observed : center line crack({TEX}$C_{C}${/TEX}), diagonal crack({TEX}$C_{D}${/TEX}), and U shape crack({TEX}$C_{U}${/TEX}). Also, HAZ crack({TEX}$C_{H}${/TEX}) was observed in the HAZ region, furthermore, mixing crack({TEX}$C_{M}${/TEX}) consisting of diagonal crack and HAZ crack was observed. White film was formed at th hot crack region in the fractured surface after it was immersed to 10% NaOH water. In the case of A5083 alloy, white films in {TEX}$C_{C}${/TEX} crack and {TEX}$C_{D}${/TEX} crack region were composed of low melting phases, {TEX}$Fe_{2}SiAl_{8}${/TEX} and eutectic phases, $Mg_2$Al$_3$ and $Mg_2$Si. Such films observed $CuAl_2$, {TEX}$Mg_{32}(Al,Zn)_{3}${/TEX}, MgZn$_2$, $Al_2$CuMg and $Mg_2$Si were observed in the whitely etched films near {TEX}$C_{C}${/TEX} crack and {TEX}$C_{D}${/TEX} crack regions. The formation of liquid films was due to the segregation of Mg, Si, Fe in the case of A5083 alloy and Zn, Mg, Cu, Sim in the case of A7N01 alloy, respectively. The {TEX}$C_{C}${/TEX} and {TEX}$C_{D}${/TEX} cracks were regarded as a result of the occurrence of tensile strain during the welding process. The formation of {TEX}$C_{M}${/TEX} crack is likely to be due to the presence of liquid film at the grain boundary near the fusion line in the base metal as well as in the weld fusion zone during solidification. The {TEX}$C_{U}${/TEX} crack is considered a result of the collapsed keyhole through incomplete closure during rapid solidification.

• Kyungpook Mathematical Journal
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• v.48 no.2
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• pp.287-302
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• 2008

The vertex set of a digraph D is denoted by V (D). A c-partite tournament is an orientation of a complete c-partite graph. A digraph D is called cycle complementary if there exist two vertex disjoint cycles $C_1$ and $C_2$ such that V(D) = $V(C_1)\;{\cup}\;V(C_2)$, and a multipartite tournament D is called weakly cycle complementary if there exist two vertex disjoint cycles $C_1$ and $C_2$ such that $V(C_1)\;{\cup}\;V(C_2)$ contains vertices of all partite sets of D. The problem of complementary cycles in 2-connected tournaments was completely solved by Reid [4] in 1985 and Z. Song [5] in 1993. They proved that every 2-connected tournament T on at least 8 vertices has complementary cycles of length t and ${\mid}V(T)\mid$ - t for all $3\;{\leq}\;t\;{\leq}\;{\mid}V(T)\mid/2$. Recently, Volkmann [8] proved that each regular multipartite tournament D of order ${\mid}V(D)\mid\;\geq\;8$ is cycle complementary. In this article, we analyze multipartite tournaments that are weakly cycle complementary. Especially, we will characterize all 3-connected c-partite tournaments with $c\;\geq\;3$ that are weakly cycle complementary.

• Journal of the Korean Chemical Society
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• v.22 no.3
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• pp.158-163
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• 1978

The four 1,1-disubstituted 2-vinylcyclopropanes, 1,1-diphenyl-2-vinylcyclopropane (1a), 1,1-dicyano-2-vinylcyclopropane(1b), ethyl 1-cyano-2-vinylcyclopropanecarboxylate(1c), and diethyl 2-vinylcyclopropane-1,1-dicarboxylate(1d) rearranged below $300{\circ}C$ to the corresponding 4,4-disubstituted cyclopentenes, 4,4-diphenylcyclopentene(2a), 3-cyclopentene-1,1-dicarboxylate(2d). Diphenpyl derivative 1a rearranged almost quantitatively to 4,4-diphenylcyclopentene(2a) at the temperature of $250{\circ}C$. Although dicyano derivative 1b in solution underwent the thermal rearrangement at rather low temperature of $170{\circ}C$, the other vinylcyclopropanes, 1c and 1d, in solution rearranged thermally above $220{\circ}C$. In the thermal reaction of 1b, 1c, and 1d considerable amounts of polymers 3 were also produced. Also detected product was the ring-opened diene, ethyl 2-cyano-2,4-hexadienoate(4), in case of the pyrolysis of 1c. The observed facile rearrangement of disubstituted vinylcyclopropanes was explained by the radical stabilization effect of substituents on the diradical intermediates 5.