• Journal of the Korean Society for Heat Treatment
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• v.22 no.5
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• pp.267-274
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• 2009

Titanium Chromium Nitrided (TiCrN) coatings were deposited on stainless steel 316 L and Si (100) wafer by inductively coupled plasma assisted D.C. magnetron sputtering at the various sputtering power on Cr target and $N_2/Ar$ gas ratio. Increasing the sputtering power of Cr target, XRD patterns were changed from TiCrN to nitride $Cr_2Ti$. The maximum hardness was $Hk_{3g}$ 3900 at $0.3\;N_2/Ar$ gas ratio. The thickness of the TiCrN films increased as the Cr target power increased, and it showed over $Hk_{5g}3100$ hardness at 100 W, 150 W. TiCrN films were deposited by the ICP assisted DC magnetron sputtering shown good wear resistance as the $N_2/Ar$ gas ratio was 0.1, 0.3.

• Korean Journal of Materials Research
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• v.8 no.11
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• pp.977-981
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• 1998

Controlling the wafer temperatures from 200 to$500^{\circ}C$, low resistive tungsten thin films used for VLSI metallization are deposited by PECVD method. Resistivities of plasma deposited tungsten thin films are very sensitive to the $H_2/WF_6 $ partial pressure ratios. Residual stress behaviors of the films as a function of plasma power density were also studied. At the power density under the $0.7W/\textrm{cm}^2$, residual stress of W film is about $2.4\times10^9dyne/\textrm{cm}^2$. When the power density is. however, increased from 1.8 to $2.7W/\textrm{cm}^2$, residual stress is suddenly increased from $8.1\times10^9$ to $1.24\times10^{10}dyne/\textrm{cm}^2$ ue to the ion or radical bombardment at high power density.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.39-46
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• 2003

Sn-Cu eutectic solder bump was fabricated by electroplating for flip chip and its characteristics were studied. A Si-wafer was used as a substrate and the UBM(Under Bump Metallization) of Al(400 nm)/Cu(300 nm)/Ni(400 nm)/Au(20 nm) was coated sequentially from the substrate to the top by an electron beam evaporator. The experimental results showed that the plating ratio of the Sn-Cu increased from 0.25 to 2.7 $\mu\textrm{m}$/min with the current density of 1 to 8 A/d$\m^2$. In this range of current density the plated Sn-Cu maintains its composition nearly constant level as Sn-0.9∼1.4 wt%/Cu. The solder bump of typical mushroom shape with its stem diameter of 120 $\mu\textrm{m}$ was formed through plating at 5 A/d$\m^2$ for 2 hrs. The mushroom bump changed its shape to the spherical type of 140 $\mu\textrm{m}$ diameter by air reflow at $260^{\circ}C$. The homogeneity of chemical composition for the solder bump was examined, and Sn content in the mushroom bump appears to be uneven. However, the Sn distributed more uniformly through an air reflow.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.200-200
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• 2012

We investigated a flexible transparent film using the spinning multi-walled carbon nanotubes (MWCNTs). Spin-capable MWCNTs on iron catalyzed on a SiO2 wafer was grown by chemical vapor deposition, which was performed at $780^{\circ}C$ using C2H2 and H2 gas. The average diameter and length of MWCNTs grown on the substrate were ~15 nm and $250{\sim}300{\mu}m$, respectively. The MWCNT sheets were produced by continuously pulling out from well-aligned MWCNTs on a substrate. The MWCNT sheet films were produced simply by direct coating on the flexible film or grass. The thickness of sheet film was remarkably decreased by alcohol spraying on the surface of sheet. The alcohol splay increased transmittance and decreased electrical resistance of MWCNT sheet films. Single and double sheets were produced with sheet resistance of ~699 and ${\sim}349{\Omega}/sq$, respectively, transmittance of 81~85 % and 67~72%, respectively. The MWCNT sheet films were heated through the application of direct current power. The flexible transparent heaters showed a rapid thermal response and uniform distribution of temperature. In addition, MWCNT yarns were prepared by spinning a bundle of MWCNTs from vertically super-aligned MWCNTs on a substrate, and field emission from the tip and side of the yarns was induced in a scanning electron microscope. We found that the field emission behavior from the tip of the yarn was better than the field emission from the side. The field emission turn-on voltages from the tip and side of MWCNT yarns were 1.6 and $1.7V/{\mu}m$, respectively, after the yarn was subjected to an aging process. Both the configuration of the tip end and the body of the yarn were changed remarkably during the field emission. We also performed the field emission of the sheet films. The sheet films showed the turn on voltage of ${\sim}1.45V/{\mu}m$ during the field emission.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.81.1-81.1
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• 2012

나노임프린트 리소그라피(Nano-Imprint Lithography, NIL) 기술은 기판위의 resin을 나노구조물이 각인된 스탬프로 눌러서 나노구조물을 형성하는 기술로, 경제적이고 효과적으로 나노구조물을 제작할 수 있는 기술이다. 그중에서도 UV 기반의 나노임프린트(UV-NIL) 기술은 resin을 투명한 스탬프로 누른뒤 UV로 경화시켜 나노구조물을 형성하는 기술로써 고온, 고압($140{\sim}180^{\circ}C$, 10~30bar)이 필요한 가열식 나노임프린트 기술에 비해 상온, 상압($20^{\circ}C$, 1bar)에서도 구조물 형성이 가능하여 다층구조 형성에 적합하다. 연속적인 임프린팅 공정에 의해 resin이 quarz 스탬프에 잔류하여 패터닝에 결함을 유발하게 되므로 오염물을 제거하기 위한 세정공정이 필요하다. 하지만 UV에 의해 경화된 resin은 cross-linking을 형성하여 화학적인 내성이 증가하게 되므로 제거하기가 어렵다. 현재는 resin 제거를 위한 세정공정으로 SPM($H_2SO_4/H_2O_2$) 세정이 사용되고 있는데 세정시간이 길고 세정 후에 입자 또는 황 잔유물이 남으며 많은 유해용액 사용의 문제점이 있어 효과적으로 resin을 제거할 세정공정이 필요한 상황이다. 본 연구에서는 친환경적인 UV 세정 및 오존수 세정공정을 적용하여 경화된 resin을 제거하는 연구를 진행하였다. 실험샘플은 약 100nm 두께의 resin을 증착한 $1.5cm{\times}1.5cm$ $SiO_2$ 쿠폰 wafer를 사용하였으며, UV 및 오존수의 처리시간을 달리하여 resin 제거효율을 평가하였다. ATR-FTIR 장비를 사용하여 시간에 따른 resin의 두께를 측정한 결과, UV 세정으로 100nm 높이의 resin중에 80nm의 bulk resin이 단시간에 제거가 되었고 나머지 20nm의 resin thin film은 오존수 세정으로 쉽게 제거되는 것을 확인 하였다. 또한 표면에 남은 resin residue와 particle을 제거하기 위해서 SC-1 세정을 진행하였고 contact angle과 optical microscope 장비를 사용하여 resin이 모두 제거된 것을 확인하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.6
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• pp.282-287
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• 2009

$Ni_xFe_{100-x}$ films with a thickness of about 100nm were deposited on Si(100) substrates at room temperature by a DC magnetron co-sputtering using Fe and Ni targets. Compositional, structural, electrical and magnetic properties of the films were investigated. $Ni_{67}Fe_{33}$, $Ni_{55}Fe_{45}$, $Ni_{50}Fe_{50}$, $Ni_{45}Fe_{55}$, $Ni_{40}Fe_{60}$ films are obtained by increasing the sputtering power of the Fe target. The films of x < 55 have BCC structure and show the phase transformation after annealing at the range of $300{\sim}450^{\circ}C$ for 2 h. On the other hand, the films of x < 50 have the mixed crystalline phases of BCC and FCC after the annealing treatment. The saturation magnetization was decreased initially by the phase transformation effect but then increased again after annealing at $450^{\circ}C$ due to the grain growth and crystallization of BCC phases.

• Korean Journal of Materials Research
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• v.29 no.5
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• pp.322-327
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• 2019

Hole carrier selective MoOx film is obtained by atomic layer deposition(ALD) using molybdenum hexacarbonyl[$Mo(CO)_6$] as precursor and ozone($O_3$) oxidant. The growth rate is about 0.036 nm/cycle at 200 g/Nm of ozone concentration and the thickness of interfacial oxide is about 2 nm. The measured band gap and work function of the MoOx film grown by ALD are 3.25 eV and 8 eV, respectively. X-ray photoelectron spectroscopy(XPS) result shows that the $Mo^{6+}$ state is dominant in the MoOx thin film. In the case of ALD-MoOx grown on Si wafer, the ozone concentration does not affect the passivation performance in the as-deposited state. But, the implied open-circuit voltage increases from $576^{\circ}C$ to $620^{\circ}C$ at 250 g/Nm after post-deposition annealing at $350^{\circ}C$ in a forming gas ambient. Instead of using a p-type amorphous silicon layer, high work function MoOx films as hole selective contact are applied for heterojunction silicon solar cells and the best efficiency yet recorded (21 %) is obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.1
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• pp.19-25
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• 2013

In this study, the mechanical properties of a Ti thin film are measured by a bulge test. In the bulge test, uniform pressure is applied to one side of the film. Measurement of the membrane deflection as a function of the applied pressure allows one to determine the mechanical properties of the film. Ti thin films with thicknesses of 1.0, 1.5, and $2.0{\mu}m$ were deposited on a Si wafer by using an RF magnetron sputtering system. These specimens were annealed at $600^{\circ}C$ for 150, 300, and 600 s to investigate the effect of temperature on the yield stress and mechanical properties of the Ti films. The elastic modulus, residual stress, and yield stress of these membranes are measured by a bulge test. The experimental results suggest that the yield stress is sensitive to the film thickness and annealing time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.240-244
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• 2011

The high cost of crystalline silicon solar cells has been considered as one of the major obstacles to their terrestrial applications. Spin on doping (SOD) is presented as a useful process for the manufacturing of low cost solar cells. Phosphorus (P509) was used as an n-type emitters of solar cells. N-type emitters were formed on p-type EFG ribbon Si wafers by using a SOD at different spin speed (1,000~4,000 rpm), diffusion temperatures ($800^{\circ}C{\sim}950^{\circ}C$), and diffusion time (5~30 min) in $N_2+O_2$ atmosphere. With optimum condition, we were able to achieve cell efficiency of 14.1%.