• Electrical & Electronic Materials
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• v.7 no.5
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• pp.383-388
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• 1994

Deep levels in semi-insulating GaAs were observed by thermally stimulated current(TSC) measurement In the temperature ranges of 100-300K Tl(E$\_$c/-0.18eV), T2(E$\_$c/-0.20eV), T3(E$\_$c/-0.31eV), T4(E$\_$c/-0.40eV), and T5(E$\_$c/-O.43eV) traps have been observed. The TI, T2, and T5 traps seem to be related to the V$\_$As/, V$\_$Ga/-complex, and As$\_$Ga/$\^$++/ respectively. T4 trap is considered with respect to V$\_$Ga/-V$\_$As/ complex.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.10a
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• pp.321-324
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• 2018

Recently, the evolution of V2X (Vehicle to Everything) technology is accelerating. In particular, it can be seen that C-V2X (Cellular V2X) technology and services combined with mobile telecommunication network are developing rapidly. However, in Korea, e-Call and emergency communication services are inferior to the developed communication technologies and the proportion of vehicles arriving at Golden Hour is considerably low. Therefore, this paper designed the communication architecture with C-V2X and Android operating systems, and presented ways to improve existing e-Call services using V2N (Vehicle to Nomadic Device) communication based on it.

• Journal of the Korean Mathematical Society
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• v.52 no.1
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• pp.1-21
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• 2015

C-domains are defined via class semigroups, and every C-domain is a Mori domain with nonzero conductor whose complete integral closure is a Krull domain with finite class group. In order to extend the concept of C-domains to rings with zero divisors, we study v-Marot rings as generalizations of ordinary Marot rings and investigate their theory of regular divisorial ideals. Based on this we establish a generalization of a result well-known for integral domains. Let R be a v-Marot Mori ring, $\hat{R}$ its complete integral closure, and suppose that the conductor f = (R : $\hat{R}$) is regular. If the residue class ring R/f and the class group C($\hat{R}$) are both finite, then R is a C-ring. Moreover, we study both v-Marot rings and C-rings under various ring extensions.

• Journal of the Korean Chemical Society
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• v.14 no.4
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• pp.321-326
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• 1970

The relation between the heating temperature and the V.C.P(Vacuum Condensing Point) at different degree of vacuum through the sublimatographic separation was studied where by ; (1) Anthracene and Anthraquinone, ${\alpha}$-Naphtol and ${\beta}$-Naphthol, o-Aminobenzoicacid and p-Aminobeenzoicacid were easily separated from each of its mixtures as shown in Figure9, 10 and 11, while tailings appeared appreciably. The results were in good agreement with those expected from the $t_k$-V.C.P curves in Figures 3,4,5,6,7 and 8. (2) The relation between the degree of vacuum and the V.C.P. of ${\alpha}$-Naphthol and Anthracene at different heating temperatures appeared as follows and are shown in Figures 12 and 13.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.587-592
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• 2010

We have fabricated schottky barrier diode (SBDs) using polar (c-plane) and non polar (a-, m-plane) n-type 6H-SiC wafers. Ni/SiC ohmic contact was accomplished on the backside of the SiC wafers by thermal evaporation and annealed for 20minutes at $950^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The specific contact resistance was $3.6{\times}10^{-4}{\Omega}cm^2$ after annealing at $950^{\circ}C$. The XRD results of the alloyed contact layer show that formation of $NiSi_2$ layer might be responsible for the ohmic contact. The active rectifying electrode was formed by the same thermal evaporation of Ni thin film on topside of the SiC wafers and annealed for 5 minutes at $500^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The electrical properties of SBDs have been characterized by means of I-V and C-V curves. The forward voltage drop is about 0.95 V, 0.8 V and 0.8 V for c-, a- and m-plane SiC SBDs respectively. The ideality factor (${\eta}$) of all SBDs have been calculated from log(I)-V plot. The values of ideality factor were 1.46, 1.46 and 1.61 for c-, a- and m-plane SiC SBDs, respectively. The schottky barrier height (SBH) of all SBDs have been calculated from C-V curve. The values of SBH were 1.37 eV, 1.09 eV and 1.02 eV for c-, a- and m-plane SiC SBDs, respectively.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.333-340
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• 1996

The properties of TiN as a barrier against Cu diffusion ere studied by sheet resistance measurement, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and capacitance-voltage(C-V) measurement. The sensitivities of the various methods were compared. Specimens with Cu/TiN/Ti/SiO2/Si structure were prepared by various deposition techniques and annealed at various temperatures ranging from $500^{\circ}C$ to $800^{\circ}C$ in 10%H2/90%Ar ambient for hours. As the effectiveness of the barrier property of TiN against Cu diffusion was vanished, the irregular-shaped sports were observed and outdiffused Si were detected on the surface of the Cu thin film. The C-V characteristics of the MOS capacitors varied drastically with annealing temperatures. In C-V measurement, the inversion capacitance decreased at annealing temperature range from $500^{\circ}C$ to $700^{\circ}C$ and increased remarkably at $800^{\circ}C$. These variations may be due to the Cu diffusion through TiN into $SiO_2$ and Si.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.350-353
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• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• The Journal of Internal Korean Medicine
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• v.15 no.2
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• pp.148-162
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• 1994

A Literature study was done for identifying the effects of Bloodletting on C.V.A. The major results of the study were as follows. 1. The frequency of points of Bloodletting on C.V.A. were in order Twelve well point, Ship son, Gold SalivaJade Fluid, Paekoe, Chungchung, Sugu, Sosang, Taechu, Wijung, Kwanchung, etc. 2. The frequency of meridians of Bloodletting on C.V.A. were in order Extra-point, Tongmaek-kyong, Su-gworum-Shimpo-Kyong, Susoyang-Samcho-Kyong, Sutaeum-Pye-Kyong, Choktaeyang-Panggwang-Kyong. ete. 3. The frequency of the site of points of Bloodletting on C.V.A. were in order four extremities, face, neck and head, etc. 4. The effects of Bloodletting on C.V.A. is clear away heat and alleviate pain, therapy for waking up a patient from unconsciousness, dredge the meridian passage, expel wind-evil and promote blood circulation, emergency treatment for collapse, etc, 5. The effects of Bloodletting on the early stage of C.V.A. were wake up the patient from unconsciousness by clearing away the heat and The effects of Bloodletting on sequence of C.V.A. were dredge the meridian passage, 6. The frequency of points and meridians of Bloodletting on Hemiplegia were in order Twelve well point, Kyonjong, Extra-point, Chok soyang-Tam-Kyong, etc. 7. The frequency of points and meridians of Bloodletting on Aphasia were in order Gold Saliva Jade Fluid, Amun, Extra-point, Tongmaek-Kyong, etc. 8. The frequency of points and meridians of Bloodletting on Quadriplegia were in order Ship son, Twelve well point, Koktaek, Wijung, Extra-point, Chok soyang-Tam-Kyong, etc. 9, The frequency of points and meridians of Bloodletting on Vertigo were in order Four Gods Cleverness, Tuyu. Chanjuk, Paekoe, Taeyang, Extra-point, Yang-Kyong, etc. 10. The frequency of points and meridians of Bloodletting on Headache were in order Taeyang, Paekoe, Taechu, Extra-point, Tongmaek-Kyong, Yang-Kyong, etc. 11. The points and meridians of Bloodletting on Bells palsy were Chichang, Hyopko in Yangmyong-Kyong.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.10-13
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• 2006

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-Sic/SOI pressure sensor presents a high-sensitivity and excel lent temperature stability.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.93-93
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• 1996