• Title/Summary/Keyword: C.V.A.

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The Design and implementation of LVC Integrated Architecture Technology building division-level L-V-C Interoperability Training System (사단급 L-V-C연동훈련체계 구축을 위한 LVC통합아키텍쳐기술 설계 및 구현)

  • Won, Kyoungchan;Koo, JaHwan;Lee, Hojun;Kim, Yong-Pil
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.22 no.5
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    • pp.334-342
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    • 2021
  • In Korea, the training is performed through independent environments without interoperability among L-V-C systems. In the L system, training for large units is limited due to civil complaints at the training grounds and road restrictions. The V system is insufficient in training related to tactical training, and the C system lacks practicality due to a lack of combat friction elements. To achieve synchronicity and integration training between upper and lower units, it is necessary to establish a system to ensure integrated training for each unit by interoperating the currently operating L, V, and C systems. The interoperability between the C-C system supports Korea-US Combined Exercise. On the other hand, the actual development of the training system through the interoperability of L, V, and C has not been made. Although efforts are being made to establish the L, V, and C system centering on the Army, the joint composite battlefield and LVC integrated architecture technology are not yet secured. Therefore, this paper proposes a new plan for the future training system by designing and implementing the LVC integrated architecture technology, which is the core technology that can build the L-V-C interoperability training system. In conclusion, a division-level L-V-C interoperability training system can be established in the future by securing the LVC integrated architecture technology.

Using Tabu Search for L(2,1)-coloring Problem of Graphs with Diameter 2 (Tabu Search를 이용한 지름이 2인 그래프에 대한 L(2,1)-coloring 문제 해결)

  • Kim, SoJeong;Kim, ChanSoo;Han, KeunHee
    • Journal of Digital Convergence
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    • v.20 no.2
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    • pp.345-351
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    • 2022
  • For simple undirected graph G=(V,E), L(2,1)-coloring of G is a nonnegative real-valued function f : V → [0,1,…,k] such that whenever vertices x and y are adjacent in G then |f(x)-f(y)|≥ 2 and whenever the distance between x and y is 2, |f(x)-f(y)|≥ 1. For a given L(2,1)-coloring c of graph G, the c-span is λ(c) = max{|c(v)-c(v)||u,v∈V}. L(2,1)-coloring number λ(G) = min{λ(c)} where the minimum is taken over all L(2,1)-coloring c of graph G. In this paper, based on Harary's Theorem, we use Tabu Search to figure out the existence of Hamiltonian Path in a complementary graph and confirmed that if λ(G) is equal to n(=|V|).

Dissolution Behaviors of Sericin in Cocoon Shell on the Fluorescence Colors (누에고치층의 형광색에 따른 Sericin의 용해성)

  • 손승종;남중희
    • Journal of Sericultural and Entomological Science
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    • v.30 no.1
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    • pp.33-39
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    • 1988
  • In the case of white cocoon, the fluorescence colors are classified as a yellowish fluorescence cocoon(Y.F.C.) and a violet fluorescence cocoon(V.F.C.) by exposing to ultra-violet ray. Accordingly, experiments were carried out to investigate the difference of sericin behaviors between Y.F.C. and V.F.C. by measuring the sericin solubility, surface tension and viscosity of the sericin solution. Also, the reelability of two different type of cocoons was investigated in the silk reeling process. The results were summarized as follows; 1. The sericin solubility of Y.F.C. shell is higher than that of V.F.C. shell with the dissolution temperature and time. It is shown that the sericin solubility curves of Y.F.c. and V.F.C. are similar in shape, but the difference of sericin solubility between Y.F.C. and V.F.C. is more significant at higher bath temperature. 2. The initial sericin dissolution curves of Y.F.C. and V.F.C. cocoon shell can be divided by four parts within the range of dissolving time from 5 minutes to 60 minutes. The initial dissolution velocity of Y.F.C. shell is faster than that of V.F.C. but the velocity difference is negligible after 30 minutes of dissolving time. 3. The gelation of V.F.C. sericin solution is faster than that of Y.F.C. at early stage(in the range of 15 minutes to 60 minutes). 4. In the silk reeling process, the reelability of Y.F.C. is better than that of V.F.C. with about 11%. This is mainly due to the higher sericin solubility in Y.F.C. followed by the fast dissolution velocity.

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Effects of SiC Cluster on Mechanical Properties of the 2024A1/$SiC_p$ Composites (2024A1/$SiC_p$복합재료의 기계적특성에 미치는 SiC클러스터의 영향)

  • 김홍물;천병선
    • Journal of Powder Materials
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    • v.8 no.2
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    • pp.124-130
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    • 2001
  • A centrifugally atomized 2024A1/SiC/sub p/ composites were extruded to study effect of clusters on mechanical properties, and a model was proposed that the strength of MMCs would be estimated from the load transfer model approach that taken into consideration of the clusters. This model has been successfully utilized to predict the strength and fracture toughness of MMCs. The experimental and calculated results show coincidence and that the fracture toughness decreases with increasing the volume fraction of particles. On the basis of experimental observations, we suggest that the strength and fracture toughness of particle reinforced MMCs may be calculated from; σ/sub y/=σ/sub m/V/sub m/+σ/sub r/(V/sub r/-V/sub c)-σ/sub r/V/sub c/, K/sub IQ/=σ/sub Y/((3πt)((r/sub r//V/sub r/)(r/sub c//V/sub c/))/sup 1/2/)/sup 1/2/, respectively.

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A Study on the A.C.Breakdown Voltage-Temperature Characteristics for Air Insulated Power Installation (공기절연 전력설비를 위한 교류전로파괴전압-온도특성에 관한 연구)

  • 김상구;송현직;김영훈;이광식;이동인
    • The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.9 no.1
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    • pp.47-53
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    • 1995
  • In this paper, the characteristics of breakdown voltage($\textrm{V}_{Brms}$) -temperature(T) for air insulated power installation in flowing air with variation of T(30[$^{\circ}C$] -180[$^{\circ}C$]) are presented. To study these subjects, needle-to-needle gap in the circular pipe(inner diameter 5[cm]) are used. Also, theories of gas discharge and hydrodynamics in pipe were used to analysis for the characteristics. The $\textrm{V}_{Brms}$ is proportional to flow velocity. At high velocity, $\textrm{V}_{Brms}$ is described the saturation. At high T(180[$^{\circ}C$]), $\textrm{V}_{Brms}$ is about 4.7(kV] lower than low T(30[$^{\circ}C$]). The empirical equation obtained from this study is $\textrm{V}_{Brms}=A\times{Log[Re}+B$. Where A, B : Constant.

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Effects of V and C additions on the Thermal Expansion and Tensile Properties of a High Strength Invar Base Alloy (고강도 인바계 합금의 열팽창 및 인장 특성에 미치는 바나듐과 탄소 원소 첨가 영향)

  • Yun, A.C.;Yun, S.C.;Ha, T.K.;Song, J.H.;Lee, K.A.
    • Transactions of Materials Processing
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    • v.24 no.1
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    • pp.44-51
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    • 2015
  • The current study seeks to examine the effects of V and C additions on the mechanical and low thermal expansion properties of a high strength invar base alloy. The base alloy (Fe-36%Ni-0.9%Co-2.75%Mo-0.7Cr-0.23Mn-0.17Si-0.3%C, wt.%) contains $Mo_2C$ carbides, which form as the main precipitate. In contrast, alloys with additions of 0.4%V+0.3%C (alloy A) or 0.4%V+0.45%C (alloy B) contain $Mo_2C$+[V, Mo]C carbides. The average thermal expansion coefficients of these high strength invar based alloys were measured in the range of $5.16{\sim}5.43{\mu}m/m{\cdot}^{\circ}C$ for temperatures of $15{\sim}230^{\circ}C$. Moreover, alloy B showed lower thermal expansion coefficient than the other alloys in this temperature range. For the mechanical properties, the [V, Mo]C improved hardness and strengths(Y.S. and T.S.) of the high strength invar base alloy. T.S.(tensile strength) and Y.S.(yield strength) of hot forged alloy B specimen were measured at 844.6MPa and 518.0MPa, respectively. The tensile fractography of alloy B exhibited a ductile transgranular fracture mode and voids were initiated between the [V, Mo]C particles and the matrix. Superior properties of high strength and low thermal expansion coefficient can be obtained by [V, Mo]C precipitation in alloy B with the addition of 0.4%V and 0.45%C.

Fabrications and Characterization of High Temperature, High Voltage Ni/6H-SiC and Ni/4H-SiC Schottky Barrier Diodes (고온, 고전압 Ni/4H-SiC 및 Ni/6H-SiC Schottky 다이오드의 제작 및 전기적 특성 연구)

  • Lee, Ho-Seung;Lee, Sang-Wuk;Shin, Dong-Hyuk;Park, Hyun-Chang;Jung, Woong
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.11
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    • pp.70-77
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    • 1998
  • Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

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The electrical properties of a Ti/SiC(4H) sehottky diode (Ti/SiC(4H) 쇼트키 장벽 다이오드의 전기적 특성)

  • 박국상;김정윤;이기암;장성주
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.3
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    • pp.487-493
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    • 1997
  • Ti/sic(4H) Schottky barrier diodes were fabricated. The donor concentration and the built-in potential obtained by capacitance-voltage(C-V) measurement was about $2.0{\times}10^{15}{\textrm}{cm}^{-3}$ and 0.65 V, respectively. The ideality factor of 1.07 was obtained from the slope of current-voltage(I-V) characteristics at low current density. The breakdown field under the reverse bias voltage was about $1.7{\times}10^3V/{\textrm}{cm}$ and was very high. The barrier height of Ti for SiC(4H) was 0.91 V, which was determined by the analysis of the saturation current-temperature and the C-V characteristics.

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C-V Characteristics of Porous Silicon Alcohol Sensors with the Semi-transparent Electrode (반투명 전극으로 된 다공질 실리콘 알코올 가스 센서의 C-V 특성)

  • 김성진;이상훈
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.1085-1088
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    • 2003
  • In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its I-V and C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/Oxidized porous silicon/porous silicon/Silicon/Al, where the silicon substrate is etched anisotropically to be prepared into a membrane shape. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator- semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

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Relationship between V/C and Accident Rate for Freeway Facility Sections (focused on Shingal-Ansan Freeway) (고속도로 시설물 구간의 교통혼잡도와 사고율의 관계 분석 (신갈-안산 고속도로를 중심으로))

  • Oh, Cheol;Chang, Jae-Nam;Chang, Myeong-Sun
    • Journal of Korean Society of Transportation
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    • v.17 no.2
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    • pp.21-27
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    • 1999
  • The objective of this study is to clarify the relationship between accident rate and V/C for freeway facility. The relationship can be used as a basic reference to predict and prevent traffic accident. The traffic volume and the number of accidents from 1992 to 1997 on Shingal-Ansan Freeway were analyzed in this study to clarify the relationship. Hourly accident rate and V/C were calculated for each facility sections : basic freeway section, tunnel section and toll gate section. The accident rate models consisting of an independent variable of V/C were established by repression analysis and compared with each other. The relationship between accident rates and V/C ratios represented U-shaped pattern for all sections. The result of this study indicates that accident rates are highest in the low hourly V/C range, decrease with increasing V/C ratio, and then increase as the V/C ratio increases. The accident rate of toll gate section is in general higher than that of other sections. Although the accident rate of tunnel section is higher than that of basic freeway section when V/C is above 0.67, there is no significant difference of accident rate between basic freeway and tunnel section when V/C is between 0.5 and 0.8. Basic freeway tunnel and toll gate section have the minimum accident rate when V/C is 0.78, 0.75 and 0.57 respectively.

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