• Transactions of Materials Processing
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• v.21 no.4
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• pp.221-227
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• 2012

The automotive and electronic industries have seriously considered the use of magnesium alloys because of their excellent properties such as strength to weight ratio, EMI shielding capability, etc. However, it is difficult to form magnesium alloys at room temperature because of the mechanical deformation related to twinning. Hence, magnesium alloys are normally formed at elevated temperatures. In this study, a temperature dependent constitutive model, the C-H/V model, for the magnesium alloy AZ31B sheet is proposed. A hardening law based on nonlinear kinematic and H/V(Hollomon/Voce) hardening model is used to properly characterize the Bauschinger effect and the stabilization of the flow stress. Material parameters were determined from a series of uni-axial cyclic experiments(C-T-C) with the temperature ranging between 150 and $250^{\circ}C$. The developed models are fit to experimental data and a comparison is made.

• Progress in Superconductivity and Cryogenics
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• v.4 no.1
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• pp.4-7
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• 2002

Samples of $Nb/Al-AlO_x/Nb$ tunnel junction with the size of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated by using self-aligning and reactive ion etching technique In the high quality samples, the $V_m$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density of $J_c: 500 A/cm^2 and the V_g$ value (the gap voltage) was 2.8 mV. For the higher $J_c$ sample, voltage fluctuation at the gap voltage was observed. The $V_m and J_c$ values for this sample were 8 mV and 900 A/cm$^2$, respectively. Also, the relationship between critical current density $J_c$ and specific normal conductance $G_s$ of the junctions with $J_c$ in the range of 28 A/cm$^2$~940 A/cm$^2$was investigated.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.87-92
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• 2006

The characteristic of interface layer and the effect of bias voltage on the microstructure of c-BN films were studied in the microwave plasma hot filament C.V.D process. c-BN films were deposited on a high speed steel(SKH-51) substrate by hot filament CVD technique assisted with a microwave plasma to develop a high performance of resistance coating tool. c-BN films were obtained at a gas pressure of 20 Torr, vias voltage of 300 V and substrate temperature of $800^{\circ}C$ in $B_2H_6-NH_3-H_2$ gas system. It was found that a thin layer of hexagonal boron nitride(h-BN) phase exists at the interface between c-BN layer and substrate.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.1020-1025
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• 1995

The Schottky barrier hieght(SBH) of Au/n-Si(100) were investigated by current-voltage(I-V) and capacitance voltage(C-V) measurement within a temperature range of l00K∼300K. The values of SBH at room temperature obtained from these two measurements were (0.79${\pm}$0.02)eV. The SBH obtained from the C-V measurement was temperature independent, while that obtained from the I-V measurement decreased linearly with decreasing temperature. This indicates that the Schottky diode has deviated from the thermionic emission theory at low-temperature, Thus, other current transport processes were considered and the contribution of recombination current was dominant at low temperature. We found that it leads to a lower SBH value. Thus, the conflicating results between C-V and I-V measurement were explained, C-V measurement is believed to yield mare reliable SBH values in present study since it is not affected by the current transport uncertainties.

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.18-21
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• 1991

청록색 영역에서 발진하는 XeF(C$\longrightarrow$A)엑사이머 레이저 여기용 2.56MeV 전자빔 가속기를 개발하였다. 대출력 전자빔 가속기는 $\pm$80kV로 충전하는 Marx Generator를 동축구조로 꾸밈으로서 낮은 임퍼던스와 인덕턴스를 유지할 수 있었고, 빠른 전압상승과 유사구형파 출력을 얻을 수 있었다. 본 연구에서는 대출력 전자빔가속기 (2.56 MeV, 2.2KJ)의 파라메터와 동작특성, 전압측정 등을 기술한다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.6
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• pp.890-898
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• 2001

4H-SiC(silicon carbide) MESFET large signal model was studied using modified Materka-Kacprzak large signal MESFET model. 4H-SiC MESFET device simulation have been conducted by Silvaco\`s 2D device simulator, ATLAS. The result is modeled using modified Materka large signal model. simulation and modeling results are -8 V pinch off voltage, under V$\_$GS/=0 V, V$\_$DS/=25 V conditions, I$\_$DSS/=270 mA/mm, G$\_$m/=52.8 ms/mm were obtained. Through the power simulation 2 GHz, at the bias of V$\_$GS/-4 V md V$\_$DS/=25 V, 10 dB Gain, 34 dBm (1dB compression point)output porter, 7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.d.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3248-3252
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• 2012

Vibrio extracellular metalloprotease (vEP), secreted from Vibrio vulnificus, shows various proteolytic function such as prothrombin activation and fibrinolytic activities. Premature form of vEP has an N-terminal (nPP) and a C-terminal (C-ter100) region. The nPP and C-ter100 regions are autocleaved for the matured metalloprotease activity. It has been proposed that two regions play a key role in regulating enzymatic activity of vEP. Especially, C-ter100 has a regulatory function on proteolytic activity of vEP. C-ter100 domain has been cloned into the E. coli expression vectors, pET32a and pGEX 4T-1 with TEV protease cleavage site and purified using gel-filtration chromatography followed by affinity chromatography. To understand how C-ter100 modulates proteolytic activity of vEP, structural studies were performed by heteronuclar multi-dimensional NMR spectroscopy. Backbone $^1H$, $^{15}N$ and $^{13}C$ resonances were assigned by data from standard triple resonance and HCCH-TOCSY experiments. The secondary structures of vEP C-ter100 were determined by TALOS+ and CSI software based on hydrogen/deuterium exchange. NMR data show that C-ter100 of vEP forms a ${\beta}$-barrel structure consisting of eight ${\beta}$-strands.

• Journal of Auto-vehicle Safety Association
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• v.15 no.3
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• pp.34-42
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• 2023

Simulation-based virtual testing is known to be a major requirement for verifying the safety of autonomous driving functions. However, in the simulation environment, there is a difficulty in that all driving environments related to the autonomous driving system must be realistically modeled. In particular, C-ITS (Cooperative-Intelligent Transport Systems) is essential for urban autonomous driving of Lv.4, but the approach to modeling for C-ITS service in the MILS (Model in the Loop Simulation) environment is not yet clear. Therefore, this paper aims to deal with V2X (Vehicle to Everything) modeling methods to effectively apply C-ITS-based autonomous cooperative driving services in the MILS environment. First, major C-ITS services and use cases for autonomous cooperative driving are analyzed, and a modeling method of V2X signals for C-ITS service simulation is proposed. Based on the modeled V2X messages, the validity of the proposed approach is reviewed through simulations on the C-ITS service use case.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.63-63
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• 2009

In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to observe static DC characteristics, such as a threshold voltage ($V_{TH}$) and a figure of merit ($V_B^2/R_{SP,ON}$). To optimize the static DC characteristics, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. Design parameters are optimized using 2D numerical simulations and the 4H-SiC DMOSFET structure results in high figure of merit ($V_B^2/R_{SP,ON}$>~$340MW/cm^2$) for a power MOSFET in $V_B{\sim}1200V$ range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.236-236
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• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C - SiC thin film grown on Si substrates with thermal oxide layer using APCVD. Pd/poiy 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2\times10^{-3}\;A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about $400^{\circ}C$. According to $H_2$ concentrations, their barrier height($\Phi_{Bn}$) were changed 0.587 eV, 0.579 eV, 0.572 eV and 0.569 eV, respectively. the current was increased. Characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.