• Title/Summary/Keyword: C-doped $MgB_2$

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The superconductivity and pinning properties of Y2O3-doped GdBa2Cu3O7-δ films prepared by pulsed laser deposition

  • Oh, Won-Jae;Park, Insung;Yoo, Sang-Im
    • Progress in Superconductivity and Cryogenics
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    • v.20 no.4
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    • pp.41-45
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    • 2018
  • We have investigated the effect of $Y_2O_3$ nanoparticles on the pinning properties of $Y_2O_3$-doped $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) films. Both undoped and $Y_2O_3$-doped GdBCO films were grown on $CeO_2$-buffered MgO (100) single crystal substrates by pulsed laser deposition (PLD) using KrF (${\lambda}=248nm$) laser. The $Y_2O_3$ doping contents were controlled up to ~ 2.5 area% by varying the internal angles of $Y_2O_3$ sectors put on the top surface of GdBCO target. Compared with the $Gd_2O_3$-doped GdBCO films previously reported by our group [1], the $Y_2O_3$-doped GdBCO films exhibited less severe critical temperature ($T_c$) drop and thus slightly enhanced critical current densities ($J_c$) and pinning force densities ($F_p$) at 65 K for the applied field parallel to the c-axis of the GdBCO matrix (B//c) with increasing the doping content. Below 40 K, the in-field $J_c$ and $F_p$ values of all $Y_2O_3$-doped GdBCO films exhibited higher than those of undoped GdBCO film, suggesting that $Y_2O_3$ inclusions might act as effective pinning centers.

Luminescence behaviour of rare earth doped alkaline earth aluminates synthesized by combustion method (연소법에 의한 rare earth doped doped alkaline earth aluminates 형광체의 발광특성)

  • Jung, Young-Ho;Park, Jin-Won;Park, Jo-Yong;Khatkar, S.P.;Taxak, V.B.;Myung, Kwang-Shik;Han, Sang-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.581-584
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    • 2002
  • A new method for the preparation of lanthanide ions activated strontium aluminates phosphor by combustion method has been proposed. Combustion method consist of the redox reactions between the respective metal nitrates and urea in a preheated funace at $500^{\circ}C$. The luminescence behavior of the phosphor was studied and compared with corresponding phosphor prepared by conventional method. Effect of $Mg^{2+}$ ion concentration in strontium aluminate phosphor was investigated and the maximum luminescence of about $100cd/m^2$ was obtained. This method gave better brightness and small size to the phosphor than made by conventional method.

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Physical Property Change of the Gapless Semiconductor $PbPdO_2$ Thin Film by Ex-situ Annealing

  • Choo, S.M.;Park, S.M.;Lee, K.J.;Jo, Y.H.;Park, G.S.;Jung, M.H.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.371-372
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    • 2012
  • We have studied lead-based gapless semiconductors, $PbPdO_2$, which is very sensitive to external parameters such as temperature, pressure, electric field, etc[1]. We have fabricated pure $PbPdO_2$, Co- and Mn-doped $PbPdO_2$ thin films using the pulsed laser deposition. Because of the volatile element of Pb, it is very difficult to grow the films. Note that in case of $MgB_2$, Mg is also volatile element. So in order to enhance the quality of $MgB_2$, some experiments are carried out in annealing with Mg-rich atmosphere [2]. This annealing process with volatile element plays an important role in making smooth surface. Thus, we applied such process to our studies of $PbPdO_2$ thin films. As a result, we found the optimal condition of ex-situ annealing temperature ${\sim}650^{\circ}C$ and time ~12 hrs. The ex-situ annealing brought the extreme change of surface morphology of thin films. After ex-situ annealing with PbO-rich atmosphere, the grain size of thin film was almost 100 times enlarged for all the thin films and also the PbO impurity phase was smeared out. And from X-ray diffraction measurements, we determined highly crystallized phases after annealing. So, we measured electrical and magnetic properties. Because of reduced grain boundary, the resistivity of ex-situ annealed samples changed smaller than no ex-situ sample. And the carrier densities of thin films were decreased with ex-situ annealing time. In this case, oxygen vacancies were removed by ex-situ annealing. Furthermore, we will discuss the transport and magnetic properties in pure $PbPdO_2$, Co- and Mn-doped $PbPdO_2$ thin films in detail.

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Temperature dependence of optical energy gaps and thermodynamic function of $Zn_{4}SnSe_{6}$ and $Zn_{4}SnSe_{6}:Co^{2+}$ single crystals ($Zn_{4}SnSe_{6}$$Zn_{4}SnSe_{6}:Co^{2+}$ 단결정에서 광학적 에너지 띠 및 열역학적 함수의 온도의존성 연구)

  • Kim, D.T.;Kim, N.O.;Choi, Y.I.;Kim, B.C.;Kim, H.G.;Hyun, S.C.;Kim, B.I.;Song, C.I.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.08a
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    • pp.25-30
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    • 2002
  • The ternary semiconducting compounds of the $A_{4}BX_{6}$(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ single crystals were grown by the chemical transport reaction(CTR) method using iodine of $6mg/cm^{3}$ as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at $700^{\circ}C$ for the source aone and at $820^{\circ}C$ for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]

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Thick Film Type duster in Mg2SiO4/Glass composite ceramics for Anion Generation (Mg2SiO4/Glass Composite계 세라믹스를 이용한 음이온 발생용 후막형 클러스터)

  • Yeo, Dong-Hun;Shin, Hyo-Soon;Hong, Youn-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.2
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    • pp.118-123
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    • 2010
  • The eco-friendly technologies have been extended as matter of international concern due to various diseases and syndromes according to an environmental pollution. In this study, we have manufactured a ceramic cluster with thick film type for anion generation equipment which is maximized anion but minimized ozone contents generated. To develop the formulation of ceramic cluster, we conducted the $Mg_2SiO_4$ powders doped with 10 vol% glass frits as Na-Zn-B-O system and sintered at $1050^{\circ}C$ for 2 hours in air for starting materials and investigated the matching properties between the Ag-Pd electrode and the starting materials. The sintered sample for the composition of cluster has 6.7 of dielectric constant and 32 kV/mm of withstand voltage. The yield of anions was measured according to an electrode pattering, discharge gap between electrode, and thickness of electrode protective layer in the cluster of thick film type. We have manufactured the ceramic clusters with optimized thick film structure that have an anion over a hundred particles and the ozone of 0.6 ppb generated.

The Fabrication an dCharacteristic Analysis with Novel High Efficiency Organic Polymer Green Electroluminescence (새로운 고효울 유기 폴리머 녹색발광소자의 제작 및 특성 분석)

  • Oh, Hwan-Sool
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.12
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    • pp.1-7
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    • 2001
  • Single-layer polymer green electroluminescent devices were fabricated with novel material synthesis by using moleculely-dispersed TTA and NIDI into the polymer PC(B79) emitter layer doped with C6 fluorescent dye which has low operating voltage and high quantum efficiency. A EL cell structure of glass substrate/indium-tin-oxide/PC:TTA:NIDI:C6/Ca/Al was employed and compared with various low work function cathode electrodes Ca and Mg metals. By adjusting the concentration of the fluorescent dye C6, low turn-on voltage of 2.4V was obtained, maximum quantum efficiency of 0.52% at 0.08mole% has been improved by about a factor of ~50 times in comparison with the undoped cell. The PL and EL colors can't be turned by changing the concentration of the C6 dopant. PL emission peaking was obtained at 495nm and EL emission peaking at 520nm with FWHM ~70nm

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Fabrication of $Li_2B_4O_7$ Series Single-Crystal TLDs and their TL properties ($Li_2B_4O_7$ 계열 단결정 TLD 소자의 제작과 특성)

  • Park, Myeong-Hwan;Park, Kang-Soo
    • Journal of radiological science and technology
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    • v.28 no.1
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    • pp.1-7
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    • 2005
  • High-quality single crystals of pure $Li_2B_4O_7$ as well as $Li_2B_4O_7$ doped with Cu, Mn and Mg impurities (1.0mol%, respectively) have been grown from the melt of $Li_2CO_3+2B_2O_3$ by Czochralski method in platinum crucibles. To study the thermoluminescent properties, $Li_2B_4O_7$ series single crystal TLDs were made by cutting in the size of $4{\times}5{\times}1\;mm^3$. The glow curves show two or three peaks which can be easily deconvoluted. It is observed that room temperature($20{\sim}30^{\circ}C$) fadings of the dosimetric peaks of $Li_2B_4O_7$ series single crystal TLDs were about 10 % for 30 days. The relative photon energy response for $Li_2B_4O_7$ series single crystal TLDs were about 85 % when the responses were normalized to that measured with $^{60}Co\;(1.25\;MeV)\;{\gamma}-rays$. The measured data are in a good agreement with theoretical ones. The $Li_2B_4O_7$ series single crystal TLDs fabricated in this work can be used for monitoring personal and environmental radioactivity.

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