• 제목/요약/키워드: C-doped

검색결과 1,888건 처리시간 0.029초

암모니아수를 이용한 N-doped TiO2 제조 및 부식산의 광촉매 분해 (Synthesis of N-doped Titania using Ammonium Hydroxide and Photocatalytic Degradation of Humic Acid)

  • 조아영;남윤선;이동석
    • 산업기술연구
    • /
    • 제32권A호
    • /
    • pp.95-102
    • /
    • 2012
  • To advance luminance efficiency of Titania at visible range, N-doped $TiO_2$ was prepared by using ammonium hydroxide as a source of nitrogen. The photoactivities of the synthesized $TiO_2$ were evaluated on the basis of degradation of humic acid in aqueous solutions with different light sources, UV-C, UV-A and fluorescent lamp. As a result, at UV-C is high efficiency $UV_{254}$ decrease and TOC removal. In this study, the best synthetic conditions of N-doped $TiO_2$ were 5.0 M of ammonium hydroxide concentration and calcination temperature of $550^{\circ}C$. The degradation rate of humic acid as an evaluation of photoactivities of the catalysts were conducted with pH variation, decrease rate of molecular absorption, removal rate of total organic carbon and fluorescece evolution for humic acid solution. XRD and SEM were applied for analysis of surface analysis of the catalysts.

  • PDF

Growth of Er : $LiNbO_{3}$ single crystal thin film with high crystal quality by LPE method

  • Tong-Ik Shin;Hyun Lee;Joong-Won Shur;Byungyou Hong;Dae-Ho Yoon
    • 한국결정성장학회지
    • /
    • 제9권3호
    • /
    • pp.295-298
    • /
    • 1999
  • High quality of $Er_{2}O_{3}$ doped $LiNbO_{3}$ single crystal thin films were grown by the liquid phase epitaxial (LPE) method using $Er_{2}O_{3}$ doped at concentrations of 1,3, and 5 mol% respectively. After the growth of single crystal thin film, the crystallinity and the lattice mismatch along the c-axis between the film and the substrate was examined as a function of the variations of{{{{{Er}_{2}{O}_{3}}}}} dopant concentration using a X-ray double crystal technique. There was no lattice mismatch along the c-axis for the undoped film and those doped with 1 and 3 mol% of $Er_{2}O_{3}$. For 5 mol% of $Er_{2}O_{3}$ doped film, the lattice mismatch was $7.86{\times}10^{-4}$nm along the c-axis.

  • PDF

Cr-doped Y2O3-Al2O3계 붉은 안료의 합성과 적용 (Synthesis of Cr-doped Y2O3-Al2O3 Red Pigments and their Application)

  • 신경현;이병하
    • 한국세라믹학회지
    • /
    • 제45권8호
    • /
    • pp.453-458
    • /
    • 2008
  • New inorganic red pigments based on Cr-doped $Y_2O_3$ and $Al_2O_3$ were synthesized by solid state method and characterization of their pigments were characterized by using XRD, FT-IR, SEM and UV-Vis spectrophotometer. The single perovskite phase revealed at $1450^{\circ}C{\sim}1550^{\circ}C$ for 6 h due to using mineralizers. The color of pigment powders resulted out various red-shades depending on the compositions of used materials and temperatures. Glazed tiles painted with pigment powders showed red color in oxidation and reduction firing. The best red colour was obtained when the $Cr_2O_3$ was used 0.04 mole at $1450^{\circ}C$ for 6 h.

입자성장 억제제 VC/TaC가 첨가된 나노구조 WC-Co 초경 복합분말의 제조와 소결 특성 연구 (Synthesis and Sintering Behaviors of Nanostructured WC-Co Hardmetal Powders doped Grain Growth Inhibitors of VC/TaC)

  • 김병기;하국현;권대환;김진천
    • 한국분말재료학회지
    • /
    • 제9권4호
    • /
    • pp.273-279
    • /
    • 2002
  • In this study, the WC-10 wt.%Co nanopowders doped by grain growth inhibiter were produced by three different methods based on the spray conversion process. Agglomerated powders with homeogenous distribution of alloying elements and with internal particles of about 100-200 nm in diameter were synthesized. The microstructural changes and sintering behavior of hardmetal compacts were compared with doping method and sintering conditions. The microstructure of hardmetals was very sensitive to doping methods of inhibitor. Nanostructured WC-Co hardmetal powder compacts containing TaC/VC doped by chemical method instead of ball-milling shown superior sintering densification, and the microstructure maintained ultrafine scale with rounded WC particles.

Sol-gel 법으로 제작한 Ga-doped ZnO 박막의 도핑 농도와 열처리 온도가 전기적 및 광학적 특성에 미치는 효과 (Effects of Doping Concentrations and Annealing Temperatures on the Electrical and Optical Properties of Ga-doped ZnO Thin Films by Sol-gel Method)

  • 강성준;정양희
    • 한국정보통신학회논문지
    • /
    • 제16권3호
    • /
    • pp.558-564
    • /
    • 2012
  • Sol-gel 법으로 Eagle 2000 유리 기판 위에 Ga 도핑 농도와 열처리 온도에 따른 GZO 박막을 제작하여, 전기적 및 광학적 특성을 조사하였다. 1 mol% Ga 이 도핑되고 $600^{\circ}C$에서 열처리한 GZO 박막에서 가장 우수한 (002) 배향성이 관찰되었다. Hall 측정 결과, Ga 도핑 농도가 증가함에 따라 segregation 효과로 인한 캐리어 농도의 감소와 비저항 값의 증가가 관찰되었다. 1 mol% Ga 이 도핑되고 $600^{\circ}C$에서 열처리한 GZO 박막에서 가장 큰 캐리어 농도($9.13{\times}10^{18}cm^{-3}$)와 가장 낮은 비저항 ($0.87{\Omega}cm$) 값을 나타내었다. 모든 박막은 가시광 영역에서 약 80 % 이상의 투과율을 보였으며, Ga 농도가 1 에서 4 mol% 로 증가함에 따라 에너지 밴드 갭이 좁아지는 Burstein-Moss 효과가 관찰되었다.

메탄 활성화반응에서 산화칼슘 촉매의 활성에 대한 망간과 칼륨의 첨가효과 (Effects of Mn- and K-addition on Catalytic Activity of Calcium Oxide for Methane Activation)

  • 박종식;공장일;전종호;이성한
    • 대한화학회지
    • /
    • 제42권6호
    • /
    • pp.618-628
    • /
    • 1998
  • 순수한 CaO, Mn-doped CaO, Mn/CaO, K/CaO 촉매를 제조하고 이들의 메탄 활성화반응에 대한 촉매활성을 600∼800$^{\circ}C$ 온도영역에서 실험하여 산화칼슘의 촉매활성에 대한 망간과 칼륨의 첨가효과를 조사하였다. 촉매의 특성을 조사하기 위하여 X-선 분말회절분석(XRD), X-선 광전자분석(XPS), 주사전자현미경분석(SEM), 시차열분석(DSC) 및 열무게분석(TG)을 실시하였다. 촉매반응은 직결 기체크로마토그래피를 이용한 단방향 흐름 반응기로서 이루어졌다. 표준반응조건은 $p(CH_4)/p(O_2)=250$ Torr/50 Torr이며 반응기체의 주입속도는 30mL/min, 그리고 He 희석기체와 함께 전체압력은 1 atm이였다. 실험한 촉매들 중에서 6.3 mol% Mn-doped CaO 촉매가 가장 우수한 $C_2$ 선택성을 보였으며 775$^{\circ}C$에서 $C_2$ 선택성과 $C_2$ 수율이 각각 43.2%와 8.0% 이었다. 적은 양의 망간을 도프한 산화칼슘 촉매들은 망간의 양이 증가함에 따라 $C_2$ 선택성이 향상되는 경향을 보였으나 많은 양의 망간([Mn]>6.3 mol%)을 도프한 촉매에서는 $C_2$ 선택성이 감소하는 경향을 보였다. 금속이온이 도프되지 않은 6 wt.% Mn/CaO와 6 wt.% K/CaO 촉매는 700$^{\circ}C$에서 각각 13.2%와 30.9%의 $C_2$ 선택성을 보여 담지효과는 Mn보다도 K가 훨씬 우수함을 보였다. CaO와 Mn-doped CaO 촉매의 전기전도도를 $10^{-3}∼10^{-1}\;atm$의 산소분압 영역에서 측정한 결과 모두 p형의 전기적 특성을 보였으며 도프한 망간의 농도가 증가함에 다라 전기전도도는 감소하는 경향을 보였다. 촉매표면에 생성된 틈새형 산소이온이 메탄을 활성화할 수 있음을 제안하였고 틈새형 사소이온의 생성을 고체화학적 관점에서 논의하였다.

  • PDF

The Root Cause of the Rate Performance Improvement After Metal Doping: A Case Study of LiFePO4

  • Park, Chang-Kyoo;Park, Sung-Bin;Park, Ji-Hun;Shin, Ho-Chul;Cho, Won-Il;Jang, Ho
    • Bulletin of the Korean Chemical Society
    • /
    • 제32권3호
    • /
    • pp.921-926
    • /
    • 2011
  • This study investigates a root cause of the improved rate performance of $LiFePO_4$ after metal doping to Fesites. This is because the metal doped $LiFePO_4$/C maintains its initial capacity at higher C-rates than undoped one. Using $LiFePO_4$/C and doped $LiFe_{0.97}M_{0.03}PO_4$/C (M=$Al^{3+}$, $Cr^{3+}$, $Zr^{4+}$), which are synthesized by a mechanochemical process followed by one-step heat treatment, the Li content before and after chemical delithiation in the $LiFePO_4$/C and the binding energy are compared using atomic absorption spectroscopy (AAS) and X-ray photoelectron spectroscopy (XPS). The results from AAS and XPS indicate that the low Li content of the metal doped $LiFePO_4$/C after chemical delithiation is attributed to the low binding energy induced by weak Li-O interactions. The improved capacity retention of the doped $LiFePO_4$/C at high discharge rates is, therefore, achieved by relatively low binding energy between Li and O ions, which leads to fast Li diffusivity.

PECVD에 의하여 제조된 Phosphorus-Doped ${\mu}c$-Si:H 박막의 특성 (Properties of Phosphorus Doped ${\mu}c$-Si:H Thin Films Prepared by PECVD)

  • 이정노;문대규;안병태;임호빈
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1992년도 추계학술대회 논문집
    • /
    • pp.22-27
    • /
    • 1992
  • Phosphorus doped hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin films were deposited by PECVD (Plasma Enhanced Chemical Vapour Deposition) method using 10.2% $SiH_4$ gas (diluted in Ar) and 308ppm $PH_3$ gas (diluted in Ar). The structural, optical and electrical properties of the films were investigated as a function of substrate temperature(15 to $400^{\circ}C$) and RF power(10 to 120W). The thin film deposited by varing substrate temperature had columnar structure and microcrystalline phase. The volume fraction of microcrystalline phase in the films deposited at RF power of 80W, increased with increasing substrate temperature up to $200^{\circ}C$, and then decreased with further increasing substrate temperature. Volume fraction of microcrystalline phase increased monotonously with increasing RF power at substrate temperature of $250^{\circ}C$. With increasing volume fraction of microcrystalline, electrical resistivity of films decreased to 0.274 ${\Omega}cm$.

  • PDF

스퍼터링 Mo 도핑 탄소박막의 특성과 유기박막트랜지스터의 게이트 전극으로 응용 (Characteristics of Sputtering Mo Doped Carbon Films and the Application as the Gate Electrode in Organic Thin Film Transistor)

  • 김영곤;박용섭
    • 한국전기전자재료학회논문지
    • /
    • 제30권1호
    • /
    • pp.23-26
    • /
    • 2017
  • Mo doped carbon (C:Mo) thin films were fabricated with various Mo target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the surface, structural, and electrical properties of C:Mo films were investigated. UBM sputtered C:Mo thin films exhibited smooth and uniform surfaces. However, the rms surface roughness of C:Mo films were increased with the increase of target power density. Also, the resistivity value of C:Mo film as electrical properties was decreased with the increase of target power density. From the performance of organic thin filml transistor using conductive C:Mo gate electrode, the carrier mobility, threshold voltage, and on/off ratio of drain current (Ion/Ioff) showed $0.16cm^2/V{\cdot}s$, -6.0 V, and $7.7{\times}10^4$, respectively.

도핑량에 따른 다공성 3C-SiC 박막의 전기 및 광학적 특성 (Electrical and optical characteristics of porous 3C-SiC thin films with dopants)

  • 김강산;정귀상
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
    • /
    • pp.27-27
    • /
    • 2010
  • This paper describes the electrical and optical characteristics of $N_2$ doped porous 3C-SiC films. Average pore diameter is about 30 nm and etched area was increased with $N_2$ doping rate. The mobility was dramatically decreased in porous 3C-SiC. The band gaps of polycrystalline 3C-SiC films and doped porous 3C-SiC were 2.5 eV and 2.7 eV, respectively.

  • PDF