• E2M - 전기 전자와 첨단 소재
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• 제10권3호
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• pp.217-225
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• 1997

In this study, the PVDF organic thin film was fabricated by the physical vapor deposition method to be dry-process. The distance of heat source and substrate was 5[cm] and the temperature of substrate was 30[.deg. C], when the pressure had reached 2.0 x 10$^{-5}$ [Torr], the temperature of heat source was reached to 285[.deg. C] to heat at 6-8[.deg. C/min] rate, the shutter was opened and deposition was started. TG-DTA(Thermogravimetric-Differential Thermal Analysis) spectrum of PVDF pellets showed that endothermic peak arose at 170[.deg. C] and exothermic peak at 524[.deg. C], but that of thin PVDF film showed that endothermic peak arose at 145[.deg. C] and exothermic peak at 443[.deg C]. The current density was increased linearly with increasing voltage but increased nonlinearly with higher electric field than 250[kV/cm] and activation energy was about 0.667[eV] at the temperature of 30-90[.deg. C].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.88-91
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• 2000

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 200~500$[^{\circ}C]$. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100$[^{\circ}C]$ can be divided into four characteristic regions with different mechanism by the increasing current.

• 한국전기전자재료학회논문지
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• 제17권10호
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• pp.1100-1106
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• 2004

In this paper, we intend to make fringe-field switching (FFS) mode cell by the ion beam (IB) alignment method on the a-C：H thin film, to analyze electro-optical characteristics in this cell. We studied on the suitable inorganic thin film for fringe-field switching (FFS) cell and the aligning capabilities of nematic liquid crystal (NLC) using the alignment material of a-C：H thin film as working gas at 30 W rf bias condition. A high pretilt angle of about 5 $^{\circ}C$ by ion beam (IB) exposure on the a-C：H thin film surface was measured. Consequently, the high pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the a-C：H thin film surface as working gas at 30 W rf bias condition can be achieved. An excellent voltage-transmittance (V -T) and response time curve of the IE-aligned FFS-LCD was observed with oblique IB exposure on the a-C：H thin films. Also, AC V-T hysteresis characteristics of the IB-aligned FFS-LCD with IE exposure on the a-C：H thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide (PI) surface.

• 분석과학
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• 제7권4호
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• pp.493-504
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• 1994

Nb steel에 있어서의 석출물의 형상과 구조를 SEM, TEM과 XRD를 이용하여 연구하였고 추출물들의 정량분석을 ICP-AES를 사용하여 실시하였다. 석출물 추출 방법으로는 정전위 전해추출법을 사용하였고 전해액으로는 10% AA-methanol 용액과 15% Na-citrate 용액을 사용하여 비교하였다. 전해추출 전위는 10% AA-methanol 용액에서는 -100mV, 15% Na-citrate 용액에서는 -250mV로 선택하였고 이 전위에서 Nb 석출물을 분리하는 데 적당하였다. 추출 잔사 중의 $Fe_3C$의 크기는 $0.2{\sim}1.0{\mu}m$ 정도였고 Nb 탄질화물의 크기는 $0.003{\sim}0.1{\mu}m$ 정도였다. 0.1% C-0.007% Nb-0.004% N의 조성을 가진 강에서 Nb 석출물의 조성은 $NbC_{0.65}N_{0.2}$인 것으로 나타나 입방정계의 탄질화물인 것으로 판명되었다.

• 한국의학물리학회지:의학물리
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• 제13권1호
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• pp.27-31
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• 2002

6MeV 전자선의 output 인자를 결정하기 위해 간편하게 output 인자를 예측하는 수단인 1D(Dimension) 방법을 이용하였으며 그리고 1D 방법으로 결정된 output 인자를 개별적 beam cutout 하에서 직접 측정한 output 인자와 비교하여 1D 방법의 정확성을 분석하였다. 1D 방법은 정방형 field의 한 변과 항상 동일한 한 변을 갖는 사각형 field의 output 인자로서 규정되며, 임의의 사각형 field (X,Y)의 output은 1D output 인자의 곱으로 주어진다. 6MeV 전자선의 대단히 큰 정방형 field의 output은 1D 방법을 사용하면 실제보다 높은 값을 나타내지만 교정인자 CF=C.[(X-10)(Y-10)/$\mid$(X-10)(Y-10)$\mid^{1/2}]$를 적용하면 개별적 cutout하에 직접 측정된 output 인자와 잘 일치하였으며 그 오차 범위는 1% 이내였다.

• 한국세라믹학회지
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• 제29권8호
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• pp.587-592
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• 1992

Sheets of SiC-SiC whisker maxed matrix were prepared from the mixed slurry of SiC whisker and SiC matrix by the rolling method. With the increase of SiC whisker, the pore size, the porosity and the phosphoric acid absorbency of the matrix were increased, while the bubble pressure was decreased. The activation energy for the transfer of H+ ion was decreased with the increase of mixing ratio of SiC whisker to the SiC matrix from the measurement of hydrogen ion conductivity. The activation energy was evaluated as 0.25 eV when the mixing ratio of SiC whisker to the SiC matrix was 1 : 2 and the activation energy was 0.16 eV for the 2 : 1 matrix. It means that SiC whisker matrix contributes to attain a better microstructure for the diffusion of hydrogen ion. From the measurement of single cell performance of matrix with various mixing ratio, it is concluded that if SiC-SiC whisker maxed matrix has a sufficient bubble pressure to prevent the crossover of H2 gas, the current density of a fuel cell is increased with the increase of acid absorbency of the matrix. Current density was improved from 140 mA/$\textrm{cm}^2$ for 0.25 mm thickness of matrix to 170 mA/$\textrm{cm}^2$ for the 0.20 mm one at 700 mV.

• 대한수학회지
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• 제60권6호
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• pp.1137-1169
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• 2023

Let C be a curve and V → C an orthogonal vector bundle of rank r. For r ≤ 6, the structure of V can be described using tensor, symmetric and exterior products of bundles of lower rank, essentially due to the existence of exceptional isomorphisms between Spin(r, ℂ) and other groups for these r. We analyze these structures in detail, and in particular use them to describe moduli spaces of orthogonal bundles. Furthermore, the locus of isotropic vectors in V defines a quadric subfibration Q_V ⊂ ℙV . Using familiar results on quadrics of low dimension, we exhibit isomorphisms between isotropic Quot schemes of V and certain ordinary Quot schemes of line subbundles. In particular, for r ≤ 6 this gives a method for enumerating the isotropic subbundles of maximal degree of a general V , when there are finitely many.

• KSBB Journal
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• 제21권5호
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• pp.371-375
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• 2006

본 실험의 목적은 frontal analysis(FA)와 pluse input method(PIM) 방법으로 흡착분리공정에 있어서 중요한 전 단계의 하나인 등온흡착식을 결정하는데 있다. FA를 수행하기에 앞서 대상물질이었던 loxoprofen의 용해도를 측정하여 hexane/ethanol=95/5일 때 시료의 농도를 $0.2{\sim}3mg/ml$로 결정하고, pH조정을 위한 acetic acid는 0.5%로 결정하였다. 이동상의 주성분인 hexane의 조성이 증가함에 따라 용해도는 감소하였지만 분리도는 증가하는 경향을 확인하였다. 이런 용해도와 분리도 사이의 trade-off 또한 흡착분리과정에서의 조작변수가 될 수 있음을 의미한다. FA로 구한 이성분계 등온흡착식은 $$C_{S,re}=\frac{5.282C_{M,re}}{1+0.1412C_{M,re}+0.2139C_{M,ex}}$$, $$C_{S,ex}=\frac{6.413C_{M,ex}}{1+0.2139C_{M,ex}+0.1412C_{M,re}}$$로 결정하였고, PIM으로 구한 이성분계 등온흡착식은 $$C_{S,re}=\frac{5.245C_{M,re}}{1+0.1667C_{M,re}+0.2054C_{M,ex}}$$, $$C_{S,ex}=\frac{6.061C_{M,ex}}{1+0.2054C_{M,ex}+0.1667C_{M,re}}$$로 결정 하였다.

• 대한화학회지
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• 제13권2호
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• pp.121-129
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• 1969

n-Alkylamine hydrochlorides $C_nH_{2n+1}NH_3CI$에서 n=0에서 n=4 까지 이르는 低分子量 同族體의 apparent molal volume {\phi}\nu$ 및 partial molal volume $V^{\circ}$을 30$^{\circ}C$水溶液에서 測定하엿다 아민산의 濃度는 0.01M에서 0.3M까지 , 密度測定은 浮力法(Float method)를 適用하여 少數點 以下 5位까지 取하였다. 實驗結果 同族體의 分子量이 一定量 $CH_2$식 增加함에 따라 $V^{\circ}$값이 規則的인 差로서 增加한다는 事實이 觀測되었다. 또한 濃度增加함에 따른 {\phi}\nu$ 變化는 共通的으로 直選的이고 limiting slope는 positive이며 比較的 理論値에 가까왔다. 共通anion인 鹽素이온 $CI^-$의 partial molal volume, $V^{\circ}$$CI^-$은 18.6ml $mole^{-1}$으로 他硏究者들의 date와 大體的으로 一致하였다. {\phi}{\nu}$ 값의 變化로 보아 이온의 hydrophobic effect와 change effect는 거의 競合狀態이나 charge effect 곧 electrostriction effect가 優勢를 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.273-280
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• 2002

The stochiometric mix of evaporating materials for the CuGaTe$_2$ single crystal thin films was prepared from horizontal furnance. For extrapolation method of X-ray diffraction patterns for the CuGaTe$_2$ polycrystal, it was found tetragonal structure whose lattice constant a$\_$0/ and c$\_$0/ were 6.025 ${\AA}$ and 11.931 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaTe$_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 670 $^{\circ}C$ and 410 $^{\circ}C$ respective1y, and the thickness of the single crystal thin films is 2.1 $\mu\textrm{m}$. The crystalline structure of single crystalthin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of CuGaTe$_2$ single crystal thin films deduced from Hall data are 8.72${\times}$10$\^$23/㎥, 3.42${\times}$10$\^$-2/㎡/V$.$s at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the CuGaTe$_2$ single crystal thin film, we have found that the values of spin orbit coupling Δs.o and the crystal field splitting Δcr were 0.0791 eV and 0/2463eV at 10K, respectively. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0470eV and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be 0.0490eV, 0.00558eV, respectively.