• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.279-282
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• 1997

The propose of this study is research and improvement of LiNiO$_2$as cathode material for Lithium secondary batteries. LiNiO$_2$is prepared by heating LiOH . $H_2O$ and Ni(OH)$_2$(mole ratio 1 : 1) on various heat condition. In the result of XRD mesurement, all LiNiO$_2$prepared at this study showed hexagonal structure. In Cyclic Voltammetry, LiNiO$_2$is not conspicous about oxidation peak but oxidation curve change steeply over 3.8V and reduction peak discover at 3.6V. In discharge capacities, specific capacity is higher $O_2$than air when preliminary heated and 75$0^{\circ}C$ than $700^{\circ}C$, 80$0^{\circ}C$ when heated. Therefore, when preliminary heat at $650^{\circ}C$ $O_2$and heat at 75$0^{\circ}C$ carried out, discharge property is the best.

• Korean Journal of Materials Research
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• v.33 no.3
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• pp.106-114
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• 2023

The carbon concentration in the carburized steels was measured by electron probe microanalysis (EPMA) for a range of soluted carbon content in austenite from 0.1 to 1.2 wt%. This study demonstrates the problems in carbon quantitative analysis using the existing calibration curve derived from pure iron (0.008 wt%C) and graphite (99.98 wt%C) as standard specimens. In order to derive an improved calibration curve, carbon homogenization treatment was performed to produce a uniform Kα intensity in selected standard samples (AISI 8620, AISI 4140, AISI 1065, AISI 52100 steel). The trend of detection intensity was identified according to the analysis condition, such as accelerating voltage (10, 15, 30 keV), and beam current (20, 50 nA). The appropriate analysis conditions (15 keV, 20 nA) were derived. When the carbon concentration depth profile of the carburized specimen was measured for a short carburizing time using the improved calibration curve, it proved to be a more reliable and accurate analysis method compared to the conventional analysis method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.132-132
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• 2009

A 2D-simulation using a quantum model of silicon nanowire (SiNW) field-effect transistors (FETs) have been performed by the effective mass theory. We have investigated very close for real device analysis, so we used to the non-equilibrium Green's function (NEGF) and the density gradient of quantum model. We investigated I-V characteristics curve and C-V characteristics curve of the channel thickness from 5nm to 200nm. As a result of simulation, even higher drain current in SiNW using a quantum model was observed than in SiNW using a non-quantum model. The reason of higher drain current can be explained by the quantum confinement effect.

• Korean Journal of Materials Research
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• v.15 no.2
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• pp.139-142
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• 2005

[ $ZrO_2$ ] gate dielectric thin films were deposited by radio frequency (rf)-magnetron sputtering and its structure, surface morphology and electrical peoperties were studied. As the oxygen flow rate increases, the surface becomes smoother. The experimental results indicate that a high temperature annealing is desirable since it improves the electrical properties of the $ZrO_2$ gate dielectric thin films by decreasing the number of interfacial traps at the $ZrO_2/Si$ interface. The carrier transport mechanism is dominated by the thermionic emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.128-129
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• 2007

We fabricated seeded $SrBi_2Ta_2O_9$(SBT) thin films using seeding technique on the $LaZrO_x$ (LZO)/Si structure. To evaluate the ferroelectric properties of seeded SBT thin films, we investigated the crystalline phase, the surface morphology, the capacitance-voltage (C-V) curve and the current density-voltage (J-V) curve of seeded films and then compared with the physical and electrical properties of unseeded films. As the result of that, the characteristics of seeded and unseeded films have a slight difference. Therefore, the ferroelectric properties of seeded SBT thin films are not necessarily superior than unseeded films.

• Korean Journal of Materials Research
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• v.15 no.2
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• pp.79-84
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• 2005

The lowest activation temperature of a commercial vacuum getter reported so far in literature was about $400^{\circ}C$. Recently, $Ti_{0.3}Zr_{0.2}V_{0.5}$ alloy has been reported to exhibit the activation temperature lower than $200^{\circ}C$ when they are prepared as thin film. In this study, the alloy was prepared as bulk form and its activation temperature and hydrogen sorption properties were investigated in compliance with a standard method. The alloy powder was prepared by arc melting and subsequent HDH(Hydride-DeHydride) process. The activation temperature of the alloy was estimated from the ultimate pressure-temperature curve and located between $150^{\circ}C\;and\;200^{\circ}C$. The hydrogen sorption speed measured by an orifice method was 0.895 liter/sec which is comparable to thin film of same composition.

• The Korean Journal of Physiology
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• v.26 no.1
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• pp.15-25
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• 1992

In order to elucidate the properties of the background current whole cell patch clamp studies were performed in rabbit ventricular cells. Ramp pulses of ${\pm}80\;mV$ from holding potential of 40 mV(or 20 mV) at the speed of 0.8 V/sec were given every 30 sec(or 10 sec) and current-voltage diagrams(I-V curve) were obtained. For the activation of the background current isoprenaline, adenosine 3',5'-cyclic monophosphate(dBcAMP), guanosine 3',5'-cyclic monophosphate(cGMP), and $N^6$-2'-o-dibutyryladenosine 3',5'-cyclic monophosphate(dBcAMP) were applied after all known current systems were blocked with 2mM Ba, 1 mM Cd ,5 mM Ni, 10 ${\mu}M$ diltiazem, 10 ${\mu}m$ ouabain, and 20 mM tetraethylammonium(TEA). The conductance of background current in control was $0.65{\pm}0.69$ nS at 0 mV, its I-V curves was almost linear and reversed near 50 mV. When there was no taurine in pipette solution, isoprenaline hardly activated the background current but when taurine existed in pipette solution, isoprenaline activated the larger background current. Cyclic AMP or cyclic GMP alone had little effect on the activation of the background current, while cGMP potentiated cGMP effect. When the background current was activated with cGMP and cAMP, isoprenaline could not further increased the background current. The background current activated by isoprenaline depended on extracellular $Cl^-$ concentration and its reversal potential was shifted according to chloride equilibrium potential. The change of extracellular $Na+$ concentration had little effect on reversal potential of the background current activated by isoprenaline.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.737-738
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• 2007

• Bulletin of the Korean Space Science Society
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• 1995.04a
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• pp.12-12
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• 1995

No Abstract. See Full-text

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.587-592
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• 2010

We have fabricated schottky barrier diode (SBDs) using polar (c-plane) and non polar (a-, m-plane) n-type 6H-SiC wafers. Ni/SiC ohmic contact was accomplished on the backside of the SiC wafers by thermal evaporation and annealed for 20minutes at $950^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The specific contact resistance was $3.6{\times}10^{-4}{\Omega}cm^2$ after annealing at $950^{\circ}C$. The XRD results of the alloyed contact layer show that formation of $NiSi_2$ layer might be responsible for the ohmic contact. The active rectifying electrode was formed by the same thermal evaporation of Ni thin film on topside of the SiC wafers and annealed for 5 minutes at $500^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The electrical properties of SBDs have been characterized by means of I-V and C-V curves. The forward voltage drop is about 0.95 V, 0.8 V and 0.8 V for c-, a- and m-plane SiC SBDs respectively. The ideality factor (${\eta}$) of all SBDs have been calculated from log(I)-V plot. The values of ideality factor were 1.46, 1.46 and 1.61 for c-, a- and m-plane SiC SBDs, respectively. The schottky barrier height (SBH) of all SBDs have been calculated from C-V curve. The values of SBH were 1.37 eV, 1.09 eV and 1.02 eV for c-, a- and m-plane SiC SBDs, respectively.