• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.448-454
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• 2008

The purpose of this paper is to discuss the fabrication of $\beta$-PVDF($\beta$-Polyvinylidene fluoride, ${\beta}-PVF_2$) organic thin films through the vapor deposition method and to investigate the piezoelectric properties of the organic thin films produced. Vapor deposition was performed under the following conditions : the temperature of evaporator, the applied electric field and the pressure of reaction chamber were $270^{\circ}C$, 142.4 kV/cm and $2.0{\times}10^{-5}Torr$, respectively. The results showed that the amount of $\beta$-form PVDF increased from 72 % to 95.5 % with an increase in the substrate temperature. In the case of a sensor response characteristic by varying the force moment from $1.372{\times}10^{-5}N{\cdot}m$ to $39.2{\times}10^{-5}N{\cdot}m$, the output voltage increased from 1.39V to 7.04V.

• Journal of Auto-vehicle Safety Association
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• v.14 no.3
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• pp.48-59
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• 2022

A V2X system can be a candidate as a means to increase the stability of autonomous vehicles. In particular, in order to implement a Level 4 or higher autonomous driving system, the application of the V2X system is essential. Wireless communication technologies applicable to the V2X system include WAVE and C-V2X. Currently, the V2X service most used by autonomous driving systems is a service that provides signal phase and timing information and since real-time characteristic is a very important, verification of this service must be done. In this paper, we measured the time delay characteristics for providing signal phase and timing information using WAVE and LTE communication, and proposed a TOD-based signal phase and timing information generation method without using V2X communication system. To analyze the time delay characteristics, RTT (Round Trip Time) was measured as a result of the measurement. Average RTT using WAVE communication was 5.84ms and was 104.15ms with LTE communication. As a result of measuring the error between the signal phase and timing information generated based on TOD and the actual traffic light state, it was measured to be -0.284~3.784sec.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.1-7
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• 2006

An on chip voltage down converter (VDC) using the self temperature-compensation techniques is proposed. At a different gate bias voltage, PMOSFET shows different source to drain current characteristic according to the temperature variation. The proposed VDC can reduce its temperature dependency by the source to drain current ratio of two PMOSFET with different gate bias respectively. Proposed circuit is fabricated in Dongbu-anam $0.18{\mu}m$ CMOS process and experimental results show its temperature dependency of $-0.49mV/^{\circ}C$ and external supply dependency of 6mV/V. Total current consumption is only $1.1{\mu}A@2.5V$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1090-1095
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• 2008

The SiOCH films that low dielectric interlayer dielectric materials were deposited on p-type Si(100) substrates through the dissociation of BTMSM precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. SiOCH thin films were annealed at $450^{\circ}C$ for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed even greater reductions of the maximum capacitance and the dielectric constant of the SiOCH samples, owing to reductions of surface charge density. we confirmed this result with derivative of C-V characteristic, leakage current density. The maximum capacitance and leakage current density were respectively decreased about 4 pF, 60% after annealing. The average of low-k value is approximatly 2.07 after annealing.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.2
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• pp.327-331
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• 2009

Nano-porous $TiO_2$ powder was fabricated using Acetylene black, applied photo voltaic device based on the Dye-sensitized Solar Cells (DSCs) was investigated experimentally. $TiO_2$-powder was fabricated using Ti-isopropoxide and 2-propanol by sol-gel combustion method. For cases of variable Acetylene black, characteristic of porosity, size of particle and crystallite of obtained $TiO_2$ nano-powder was investigated. The photovoltaic efficiency of the prepared DSCs was measured using $TiO_2$ film which prepared on each different heat treatment temperature($400^{\circ}C{\sim}700^{\circ}C$) with paste of $TiO_2$ powder. The porosity and size of particle of $TiO_2$ powder made with Acetylene black 0.4g was influenced significantly effect to DSCs characteristic. Heat treatment at $500^{\circ}C$ makes the better photovoltaic efficiency which 5.02%($J_{sc}=11.79mA/cm^2$, $V_{oc}=0.73V$, ff=0.58). The sol-gel combustion method was useful to DSCs fabrication.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.2
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• pp.322-326
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• 2009

In this work, nanoporous $TiO_2$ powder was fabricated using Ketjen black, and applied in photovoltaic device based on the Dye-sensitized Solar Cells (DSCs). $TiO_2$ powder was fabricated using Ti-isopropoxide and 2-propanol by sol-gel combustion method. For added $0{\sim}2g$ variable of Ketjen black, characteristic of porosity, size of particle and crystallite of obtained $TiO_2$ nano powder was investigated. The photovoltaic efficiency of the prepared DSCs was measured using $TiO_2$ film which prepared on each different heat treatment temperature($100^{\circ}C{\sim}600^{\circ}C$) with paste of $TiO_2$ powder. The porosity and size in particle of $TiO_2$ powder made with Ketjen black Ig was influenced significantly effect to DSCs characteristic. Heat treatment at $500^{\circ}C$ makes the better photovoltaic efficiency which around 6.11%($J_{sc}=13.35mA/cm^2$, $V_{oc}=0.73V$, ff=0.63). The sol-gel combustion method was useful to DSCs fabrication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.291-294
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• 2003

The circuit substrate was made from the Low Temperature Cofired Ceramics(LTCC) that a $\varepsilon_\gamma$ was 7.8. Accumulated Varactor and the low noise transistor which were a Surface Mount Device-type element on LTCC substrate. Let passive element composed R, L, C with strip-line of three dimension in the multilayer substrate circuit inside, and one structure accumulate band-pass filter, resonator, a bias line, a matching circuit, and made it. Used Screen-Print process, and made Strip-line resonator. A design produced and multilayer-type VCO(Voltage Controlled Oscillator), and recognized a characteristic with the Spectrum Analyzer which was measurement equipment. Measured multilayer structure VCO is oscillation frequency 1292[MHz], oscillation output -28.38[dBm], hamonics characteristic -45[dBc] in control voltage 1.5[V], A phase noise is -68.22[dBc/Hz] in 100 KHz offset frequency. The oscillation frequency variable characteristic showed 30[MHz/V] characteristic, and consumption electric current is approximately 10[mA].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.88-91
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• 2000

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 200~500$[^{\circ}C]$. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100$[^{\circ}C]$ can be divided into four characteristic regions with different mechanism by the increasing current.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1008-1012
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• 1996

I-V, C-V characteristics of inverted staggered type hydrogenerated amorphous silicon thin film transistor(a-Si:H TFT) was studied and experimentally verified. The results show that the log-log plot of drain current increased by voltage increase. The saturated drain current of DC output characteristics increased at a fixed gate voltage. According to the increase of gate voltage, activation energy of electron and the increasing width of Id at high voltage were decreased. Id saturation current saturated at high Vd over 4.5V, Vg-ld hysteresis characteristic curves occurred between -15V and 15V of Vg. Hysteresis current decreased at low voltage of -15V and increased at high voltage of 15V.

• The Plant Pathology Journal
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• v.21 no.4
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• pp.361-368
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• 2005

A Korean isolate of Pepper mild mottle virus (PMMoV-Kr) was isolated from a diseased hot pepper plant and its biological and molecular properties were compared to that of PMMoV-J and PMMo V -So The genomic RNA of PMMoV-Kr consists of 6,356 nucleotides. The nucleotide and amino acid sequences identities of four viral proteins and two noncoding regions among PMMoV-Kr, PMMoV-S and PMMoV-J were $96.9\%\;to\;100.0\%\;and\;97.5\%\;to\;98.6\%$, respectively. Full-length cDNA amplicon of PMMoV-Kr was directly amplified by RT-PCR with a set of 5'-end primer anchoring T7 RNA promoter sequence and 3'-end virus-specific primer. Capped transcript RNAs from the full-length cDNA clone were highly infectious and caused characteristic symptoms of wild type PMMoV when mechanically inoculated to systemic host plants such as Nicotiana benthamiana and pepper plants.