• 제목/요약/키워드: C-V characteristic

검색결과 428건 처리시간 0.033초

단결정 실리콘 태양전지 도핑 확산 공정에서 주입되는 $O_2$ 가스와 PSG 유무에 따른 특성 변화 (The Study on the Characteristic of Mono Crystalline Silicon Solar Cell with Change of $O_2$ Injection during Drive-in Process and PSG Removal)

  • 최성진;송희은;유권종;이희덕
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2011년도 춘계학술발표대회 논문집
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    • pp.105-110
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    • 2011
  • The doping procedure in crystalline silicon solar cell fabrication usually contains oxygen injection during drive-in process and removal of phosphorous silicate glass(PSG). In this paper, we studied the effect of oxygen injection and PSG on conversion efficiency of solar cell. The mono crystalline silicon wafers with $156{\times}156mm^2$, $200{\mu}m$, $0.5-3.0{\Omega}{\cdot}cm$ and p-type were used. After etching $7{\mu}m$ of the surface to form the pyramidal structure, the P(phosphorous) was injected into silicon wafer using diffusion furnace to make the emitter layer. After then, the silicon nitride was deposited by the PECVD with 80 nm thickness and 2.1 refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in 400-425-450-550-$880^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Solar cells with four different types were fabricated with/without oxygen injection and PSG removal. Solar cell that injected oxygen during the drive-in process and removed PSG after doping process showed the 17.9 % conversion efficiency which is best in this study. This solar cells showed $35.5mA/cm^2$ of the current density, 632 mV of the open circuit voltage and 79.5 % of the fill factor.

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잉크젯 프린팅된 은(Ag) 박막의 등온 열처리에 따른 미세조직과 전기 비저항 특성 평가 (Microstructure and Electrical Resistivity of Ink-Jet Printed Nanoparticle Silver Films under Isothermal Annealing)

  • 최수홍;정정규;김인영;정현철;정재우;주영창
    • 한국재료학회지
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    • 제17권9호
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    • pp.453-457
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    • 2007
  • Interest in use of ink-jet printing for pattern-on-demand fabrication of metal interconnects without complicated and wasteful etching process has been on rapid increase. However, ink-jet printing is a wet process and needs an additional thermal treatment such as an annealing process. Since a metal ink is a suspension containing metal nanoparticles and organic capping molecules to prevent aggregation of them, the microstructure of an ink-jet printed metal interconnect 'as dried' can be characterized as a stack of loosely packed nanoparticles. Therefore, during being treated thermally, an inkjet-printed interconnect is likely to evolve a characteristic microstructure, different from that of the conventionally vacuum-deposited metal films. Microstructure characteristics can significantly affect the corresponding electrical and mechanical properties. The characteristics of change in microstructure and electrical resistivity of inkjet-printed silver (Ag) films when annealed isothermally at a temperature between 170 and $240^{\circ}C$ were analyzed. The change in electrical resistivity was described using the first-order exponential decay kinetics. The corresponding activation energy of 0.44 eV was explained in terms of a thermally-activated mechanism, i.e., migration of point defects such as vacancy-oxygen pairs, rather than microstructure evolution such as grain growth or change in porosity.

Reovirus and Tumor Oncolysis

  • Kim, Man-Bok;Chung, Young-Hwa;Johnston, Randal N.
    • Journal of Microbiology
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    • 제45권3호
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    • pp.187-192
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    • 2007
  • REOviruses (Respiratory Enteric Orphan viruses) are ubiquitous, non-enveloped viruses containing 10 segments of double-stranded RNA (dsRNA) as their genome. They are common isolates of the respiratory and gastrointestinal tract of humans but are not associated with severe disease and are therefore considered relatively benign. An intriguing characteristic of reovirus is its innate oncolytic potential, which is linked to the transformed state of the cell. When immortalized cells are transfected in vitro with activated oncogenes such as Ras, Sos, v-erbB, or c-myc, they became susceptible to reovirus infection and subsequent cellular lysis, indicating that oncogene signaling pathways are exploited by reovirus. This observation has led to the use of the virus in clinical trials as an anti-cancer agent against oncogenic tumors. In addition to the exploitation of oncogene signaling, reovirus may further utilize host immune responses to enhance its antitumor activity in vivo due to its innate interferon induction ability. Reovirus is, however, not entirely benign to immunocompromised animal models. Reovirus causes so-called "black feet syndrome" in immunodeficient mice and can also harm neonatal animals. Because cancer patients often undergo immunosuppression due to heavy chemo/radiation-treatments or advanced tumor progression, this pathogenic response may be a hurdle in virus-based anticancer therapies. However, a genetically attenuated reovirus variant derived from persistent reovirus infection of cells in vitro is able to exert potent anti-tumor activity with significantly reduced viral pathogenesis in immunocompromised animals. Importantly, in this instance the attenuated, reovirus maintains its oncolytic potential while significantly reducing viral pathogenesis in vivo.

DC 마그네트론 반응성 스퍼터링법에 의해서 제작된 TiO-N 박막의 구조 및 광학적특성에 관한 연구 (Studies on Structure and Optical Characteristics of TiO-N Thin Film Manufactured by DC Reactive Magnetron Sputtering Method)

  • 박장식;박상원;김태우;김성국;안원술
    • 한국표면공학회지
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    • 제37권6호
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    • pp.307-312
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    • 2004
  • Extensive efforts have been made in an attempt to utilize photocatalytic properties of $TiO_2$ in visible range. $TiO_2$ and TiO-N thin films were made by the DC reactive magnetron sputtering method at $300^{\circ}C$. Various gases (Ar, $O_2$ and $N_2$) were used and Ti target was impressed by 0.6 kW-5.8 kW power range. The hysteresis phenomenon of the $TiO_2$ thin film as a function of the discharge voltage characteristic was observed to be higher as applied power increases. That of TiO-N thin film was occurred at the 5.8 kW power. The cross section and surface roughness of thin films were observed by FE-SEM and AFM. Average surface roughness of TiO-N thin film was observed as $15.9\AA$ and that of $TiO_2$ as $13.2\AA$. The crystal phases of both $TiO_2$ and TiO-N thin films were found to be anatase structure. The atomic $\beta$-N (396 eV peak in N 1s XPS) was shown in the rutile crystal of TiO-N and was considered acting as the origin of wavelength shift to the visible light.

The effect of thermal anneal on luminescence and photovoltaic characteristics of B doped silicon-rich silicon-nitride thin films on n-type Si substrate

  • Seo, Se-Young;Kim, In-Yong;Hong, Seung-Hui;Kim, Kyung-Joong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.141-141
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    • 2010
  • The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

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지역별 프리쿨링 시스템의 에너지 절감 분석 (Analysis of Energy Reduction of Free Cooling System with Regions of South Korea)

  • 윤정인;손창효;최광환;백승문;허정호;김영민
    • 한국태양에너지학회 논문집
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    • 제34권3호
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    • pp.82-88
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    • 2014
  • Using low outdoor temperature, free cooling system is used in a data center or industrial air-conditioning for energy saving. Because use of IT equipment has increased in some office building recently, there is a growing trend towards using free cooing system. Free cooling system performance is influenced by outdoor temperature. Therefore the performance is different with regions. In this study, performance characteristic of free cooling system is analysed and energy reduction is compared with some regions. Selected regions are 4 cities; including Ulsan analyzed in preceding research, Seoul, ChunCheon and Daejeon. The Aspentech software HYSYS 8.0v was used to conduct the analysis of free cooling system based on temperature per hour of 4 cities in 2013, respectively. The main result is following as. Free cooing system in this study has energy saving effect when outdoor temperature below $7^{\circ}C$. Becuase temperature of Chuncheon is relatively low, using free cooling system can conserve most air-conditioning energy. Energy reduction amount of Seoul is 11%, Chuncheon is 17.5%, Deajeon is 15%, Ulsan is 14%. In case of large scale of air-conditioning, it is reasonable to use free cooling system although the system is used in Seoul.

빈티지 패션의 색채 특성에 관한 연구 - 2003~2008년 파리 프레타포르테 컬렉션을 중심으로 - (The Color Characteristics of Vintage Fashion - Focused on Paris Pr$\hat{e}$t-$\grave{a}$-Porter Collections, from 2003 to 2008 -)

  • 양정희;박혜원
    • 패션비즈니스
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    • 제14권1호
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    • pp.86-105
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    • 2010
  • Vintage fashion is a lot influenced by colors because an emotion is transmitted via images of "old feeling", "worn-out feeling" and "faded feeling" etc. Colors are visual sensation occurring at a time when lights stimulate an eye, which is a representative factor which humans first perceive when they touch objects. And colors in clothing function as a critical element which indicates an individual's impression and character as well as aesthetic sensation. In this study, I examined on the theoretical consideration and aesthetic characteristics via the previous literature on vintage fashion and colors. As an empirical study, I investigated on the colors of vintage fashion appearing in Pr$\hat{e}$t-$\grave{a}$-porter Collections, Paris from Spring/Summer, 2003 to Fall/Winter 2008. As a way for study, I investigated into the total 197 vintage fashion photos and calculated their RGB values by using photoshop. And I converted the values of the colors extracted into H V/C values by using Munsell Conversion Version 9.0.6 and analyzed on Munsell System of 10 Color Notation and the PCCS colors, classifying a color scheme by visual sensation measurement. The result of analyzing on the concept of vintage fashion and its color characteristics is as follows; Vintage fashion made an appearance the most in 2003 and 2004 and its colors appeared a lot in Y, YR, R and PB lines. Color tone concentrated on black and white, achromatic color and low chroma colors in a grayish line, chromatic color. Thus, the study found that colors suitable for a "worn-out", "faded" and "old" image are properly reflected in vintage fashion rather than a clear and bright background. In a color scheme, I found contrast color and same color appearing a lot, which gave an unharmonious feeling and a smack of the country. The study reveals that the color characteristic of vintage fashion is relatively diverse and complex in color, color tone or shade and color scheme, which shows a color trend which reflects a non-constructive and complex coordination characteristic instead of a standardized simple and clear image.

난소 과자극증후군과 동반된 뇌바닥동맥 혈전증 (A Case of Basilar Arterial Thrombosis in Ovarian Hyperstimulation Syndrome)

  • 박준철;임수연;배진곤;김종인;이정호
    • Clinical and Experimental Reproductive Medicine
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    • 제35권1호
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    • pp.83-88
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    • 2008
  • 보조생식술 시행 후 혈전색전증의 발생은 매우 드물기는 하나 치명적인 합병증이다. 과배란 유도시 중증 난소 과자극 증후군은 $0.1{\sim}0.5%$에서 발생하며, 중증 난소 과자극증후군 환자의 128명 중 한 명에서 혈전색전증이 발생하는 것으로 알려져 있다. 발병기전으로는 과배란 유도에 따른 고에스트로젠 혈증에 의한 혈액응고인자의 변화, 혈관 투과성의 증가에 따른 혈액농축 및 순환혈액의 감소 등을 원인으로 추정하고 있으나 그 정확한 기전은 알려진 바가 없다. 또한 thrombophilia나, 혈전색전증의 과거력 및 가족력이 있는 경우 발병율이 증가한다. 혈전증의 발생 부위는 정맥이 67%이나, 33%는 동맥에 발병하며 주로 뇌동맥에 발생된다고 보고되었다. 본 예는 3년간의 이차성 불임을 주소로 내원하여 시험관 아기시술을 시행하였으며 hCG 투여 8일 후 난소 과자극증후군이 중등도로 발생하였다. hCG 투여 후 11일째 갑작스런 의식 소실 및 우측 상지의 운동장애가 발생하여 시행한 MRI상 뇌바닥동맥 (basilar a.) 혈전증으로 진단되었으며, 혈관내 혈전 용해술 및 풍선 확장술 시행후 재관류에 성공하였다. 시술 2일 후 의식 및 운동장애는 완전히 회복되었으며 시술 7일 후 말더듬증 역시 회복되어 후유장애 없이 건강한 상태이다. Thrombophilic study상 Protein S결핍 소견을 보였고, 또한 vWF-associated Ag.이 증가된 양상을 보였다. 지금까지 국내에서 난소 과자극증후군 이후에 발생한 뇌경색은 5예가 보고되었으며, 이중 4예에서 protein S deficiency 소견을 보였으므로 선별 검사로 유용할 것으로 사료된다. 저자 등은 3년간의 이차성 불임을 주소로 내원한 33세 환자에서 시험관 아기시술시 hCG 투여 11일째에 발생한 뇌바닥동맥 혈전증을 간단한 문헌 고찰과 함께 보고하는 바이다.

홍천 철-희토류광상 모암의 암석화학 (Petrochemistry of the Hongcheon Fe-REE ore deposit in the Hongcheon area, Korea)

  • 박중권;이한영
    • 암석학회지
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    • 제12권3호
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    • pp.135-153
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    • 2003
  • 선캠브리아기 변성퇴적암류를 관입하고 있는 탄산염암에 배태하는 홍천 철-희토류 광상은 자철석, 안케라이트, 능철석, 마그네사이트, 스트론티아나이트 등의 다양한 탄산염광물과 모나자이트, 아지린휘석, Na가 섬석 및 황화광물들이 산출되어 이들 암석의 지화학적특성과 성인을 규명하고자 주 원소, 미량원소, 희토류원소 및 산소-탄소의 안정동위원소의 광물 및 암석화학연구가 이루어졌다. 각 원소(주원소, 미량원소, 희토류원소)들을 본 연구지역의 탄산염암과 유사한 철질 카보나타이트(ferro-carbonatite)와 비교하면 주 원소에서는 농집된 FeO와 결핍된 CaO가 관찰되며, $SiO_2$가 증가하면서 $TiO_2$$A1_2O_3$증가, CaO, FeO, MgO 및 $P_2O_{5}$의 약한 감소가 인지되나 분산되어 뚜렷한 경향은 아니다. 미량원소는 Nb, Zr 및 Zn이 철질 카보나타이트보다 결핍되어 나타나며, $SiO_2$의 증가에 따른 V 및 Ni의 증가, U 및 Rb의 미약한 증가가 확인되나 타 원소들은 분산되어 뚜렷한 경향을 나타내지 않는다. 희토류원소는 전희토류(TREE)함량이 매우 높고 La, Ce, Pr, Nd 및 Sm 같은 경희토류의 농집, 그리고 결핍된 중희토류로 인하여 높은 La/Lu 값을 보이고 있다. 안케라이트, 스트론티아나이트 및 전암의 산소 및 탄소 안정동위원소 결과는 본 암이 화성기원의 카보나타이트용융체에서 유래된 것으로 나타난다. 홍천 철-희토류 광상 탄산염암의 암석화학적 특성은 일반적인 철질 카보나타이트와는 차이가 있으며 러시아 Kovdor 및 핀랜드 Sokli 지역에서 산출되는 카보나타이트의 일종인 포스코라이트(phoscorite)의 암석화학성분과 매우 유사하다.

Annealed effect on the Optical and Electrical characteristic of a-IGZO thin films transistor.

  • 김종우;최원국;주병권;이전국
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2010년도 춘계학술발표대회
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    • pp.53.2-53.2
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    • 2010
  • 지금까지 능동 구동 디스플레이의 TFT backplane에 사용하고 있는 채널 물질로는 수소화된 비정질 실리콘(a-Si:H)과 저온 폴리실리콘(low temperature poly-Si)이 대표적이다. 수소화된 비정질 실리콘은 TFT-LCD 제조에 주로 사용되는 물질로 제조 공정이 비교적 간단하고 안정적이며, 생산 비용이 낮고, 소자 간 특성이 균일하여 대면적 디스플레이 제조에 유리하다. 그러나 a-Si:H TFT의 이동도(mobility)가 1 cm2/Vs이하로 낮아 Full HD 이상의 대화면, 고해상도, 고속 동작을 요구하는 UD(ultra definition)급 디스플레이를 개발하는데 있어 한계 상황에 다다르고 있다. 또한 광 누설 전류(photo leakage current)의 발생을 억제하기 위해서 화소의 개구율(aperture ratio)을 감소시켜야하므로 패널의 투과율이 저하되고, 게이트 전극에 지속적으로 바이어스를 인가 시 TFT의 문턱전압(threshold voltage)이 열화되는 문제점을 가지고 있다. 문제점을 극복하기 위한 대안으로 근래 투명 산화물 반도체(transparent oxide semiconductor)가 많은 관심을 얻고 있다. 투명 산화물 반도체는 3 eV 이상의 높은 밴드갭(band-gap)을 가지고 있어 광 흡수도가 낮아 투명하고, 광 누설 전류의 영향이 작아 화소 설계시 유리하다. 최근 다양한 조성의 산화물 반도체들이 TFT 채널 층으로의 적용을 목적으로 활발하게 연구되고 있으며 ZnO, SnO2, In2O3, IGO(indium-gallium oxide), a-ZTO(amorphous zinc-tin-oxide), a-IZO (amorphous indium-zinc oxide), a-IGZO(amorphous indium-galliumzinc oxide) 등이 그 예이다. 이들은 상온 또는 $200^{\circ}C$ 이하의 낮은 온도에서 PLD(pulsed laser deposition)나 스퍼터링(sputtering)과 같은 물리적 기상 증착법(physical vapor deposition)으로 손쉽게 증착이 가능하다. 특히 이중에서도 a-IGZO는 비정질임에도 불구하고 이동도가 $10\;cm2/V{\cdot}s$ 정도로 a-Si:H에 비해 월등히 높은 이동도를 나타낸다. 이와 같이 a-IGZO는 비정질이 가지는 균일한 특성과 양호한 이동도로 인하여 대화면, 고속, 고화질의 평판 디스플레이용 TFT 제작에 적합하고, 뿐만 아니라 공정 온도가 낮은 장점으로 인해 플렉시블 디스플레이(flexible display)의 backplane 소재로서도 연구되고 있다. 본 실험에서는 rf sputtering을 이용하여 증착한 a-IGZO 박막에 대하여 열처리 조건 변화에 따른 a-IGZO 박막들의 광학적, 전기적 특성변화를 살펴보았고, 이와 더불어 a-IGZO 박막을 TFT에 적용하여 소자의 특성을 분석함으로써, 열처리에 따른 Transfer Curve에서의 우리가 요구하는 Threshold Voltage(Vth)의 변화를 관찰하였다.

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