• Proceedings of the KWS Conference
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• 2005.11a
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• pp.195-197
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• 2005

An intermediate heat exchanger(IHX) is a key component in a next-generation VHTR with process heat applications such as hydrogen production and also for an indirect gas turbine system. Therefore, high temperature brazing with nickel-based filler metal(MBF-15) was carried out to study the joining characteristic(microstucture, joining strength) of nickel-based superalloy(Haynes 230) by vacuum brazing. The experimental brazing was carried out at the brazing process, an applied pressure of about 0.74Mpa and the three kinds of brazing temperatures were 1100, 1150, and $1190^{\circ}C$ with holding time 5 minute. It's joining phenomena were analyzed by optical microscopy and scanning electron microscopy with EPMA. The results of microstructure in the centre-line region of a joint brazed with MBF-15 show a typical ternary eutectic of v-nickel, nickel boride and chromium boride.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.193-196
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• 1999

Organic electroluminescent devices have attracted a great deal of attention due to thier potential application to full-color flat-panel displays. The 8-hydroxyquinollne Zinc(Znq$_2$) were synthesized successfully from zinc chloride(ZnCl$_2$) and zinc acetate(Zn(C$_2$H$_3$O$_3$)$_2$) as green omitting material. A double-layer ELD consist of an emitting layer of B-hydroxyquinoline Zinc(Znq$_2$) and a hole-transport layer of tai-phenylene diamine(TPD) derivatives sandwiched between an Aluminium(Al) and Indium-Tin-Oxide(ITO) electrodes omitted green light resulting from Znq$_2$. The electroluminescent devices (ELD) exhibited a maximum luminance of 1000cd/$\textrm{cm}^2$ at a driving voltage of 8V and a driving current density of 0.4mA/$\textrm{cm}^2$.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.77-81
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• 2010

The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering and effects of working pressure and oxygen contents on the electrical properties were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM for the 70mTorr. From the surface analysis (AFM), the number of crystal grain of AZO thin film increased as working pressure increased. The film deposited with 70mTorr of working pressure showed n-type semiconductor characteristic having suitable resistivity $-1.59{\times}10^{-2}{\Omega}cm$, carrier concentration $-10.1{\times}10^{19}cm^{-3}$, and mobility $-4.35cm^2V^{-1}s^{-1}$ while other films by 7 mTorr, 20 mTorr of working pressure closed to metallic films. The films including the oxygen represent stoichiometric composition similar to the oxide. The transmittance of the film was over 85% in the visible light range regardless of the changes in working pressure and oxygen contents.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.31.2-31.2
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• 2009

In this research, single walled carbon nano-tube film was manufactured with spray coating method on glass for application as transparent heat element. SWNTs solution to be used for spraying is obtained by dispersion of 0.01 wt% purified SWNTs in dimethylformamide (DMF) solution through ultrasonification and centrifugation. The transmittance and sheet resistance of SWNTs film were determined by the number of spray injection. Manufactured SWNTs film will have sheet resistance range of $200\;\Omega/\square-900\;\Omega/\square$ at transmittance range of 70-90 %. Heat generation characteristic of SWNTs film was measured by applying constant DC voltage of 15V. The result confirmed that SWNTs film with sheet resistance of $200\;\Omega/\square$ reaches surface temperature of $80^{\circ}C$ within several seconds. In addition, PET coating film was coated on top of the SWNTs film by using laminator in order to solve weak adhesive property of the spray coated SWNTs film on the substrate as well as to maintain its electrical and optical properties.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.15-18
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• 2003

The Cd$\_$1-x/Zn$\_$x/Te film was produced by thermal evaporation for the flat-panel X-ray detector. The crystal structure and the surface morphology of poly crystalline Cd$\_$1-x/Zn$\_$x/Te film were examined using XRD and SEM, respectively. The leakage current and X-ray sensitivity of the fabricated films were measured to analyze the X-ray response characteristic of Zn in a polycrystalline CdZnTe thin film. The leakage current and the output charge density of Cd$\_$0.7/Zn$\_$0.3/Te thin film were measured to 0.3 1nA/$\textrm{cm}^2$ and 260 pC/$\textrm{cm}^2$ at an applied voltage of 2.5 V/$\mu\textrm{m}$, respectively. Experimental results showed that the increase of Zn doping rates in Cd$\_$1-x/Zn$\_$x/Te detectors reduced the leakage current and improved the X-ray sensitivity significantly. The leakage current was drastically diminished by the formation of thin parylene layer in the Cd$\_$0.7/Zn$\_$0.3/Te detector.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1359-1360
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• 2006

lTO(Indium-Tin-Oxide) was used as anode material for OLED. Characteristics of ITO have great effect on efficiency of OLEDS(Organic light emitting diodes). ITO surface was treated by Nd:YAG laser in order to improve its chemical properties, wettability, adhesive property and to remove the surface contaminants while maintaining its original function. In this study, main purpose was to improve the efficiency of OLEDs by the ITO surface treatment: ITO surface was treated using a Nd:YAG(${\lambda}=266nm$, pulse) with a fixed power of 0.06[w] and various stage scanning velocities. Surface morphology of the ITO was investigated by AFM. Test OLEDs with surface treated ITO were fabricated by deposition of TPD (HTL), Ald3 (ETL/TML) and Al (cathode) thin films. Device performance of the OLEDs such as V-I-L was investigated using Source Measurement Unit (SMU: Keithly. Model 2400) and Luminance Measurement (TOPCON. BM-8).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.190-193
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• 2003

Sm-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on the Pt(111)/Ti/$SiO_2$/Si(100) substrates prepared by a sol-gel method. The effect on structural and electrical properties of PZT thin films measured according to the Sm content. Sm-doping altered significantly dielectric and ferroelectric properties. The remanent polarization and the coercive field decreased with the increasing Sm content. The dielectric constant and the dielectric loss of PZT thin films decreased with the increasing Sm content. At 100 kHz, the dielectric constant and the dielectric loss of. the 0.3 mol% of Sm-doped PZT thin film were 1200 and 0.12 respectively. The remanent polarization (2Pr) of the 0.3 mol% of Sm-doped PZT thin film was $52.13{\mu}C/cm^2$ and the coercive field was 94.01 kV/cm. The 0.3 mol% of Sm-doped PZT thin film showed an improved fatigue characteristic comparing to the undoped PZT thin film.

• Journal of the Korean Geosynthetics Society
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• v.16 no.2
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• pp.159-164
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• 2017

This paper presents the results of an investigation into the thermo-hydromechanical response of weathered granite soil. The effect of forced change temperature and relative humidity at the soil layer boundaries were monitored during heating. A series of load settlement test were performed on layers of compacted, unsatureated weathered granite soil with geosynthetic embedded at mid height before and after application of heat exchanger to the base of the soil layers. The results from this study indicated the potential for using embedded heat exchangers for the mechanical improvement of geotechnical systems incorporating weathered granite soil.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.51-54
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• 2003

Tb-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates prepared by a sol-gel method. Films have a Zr/Ti ratio of 60:40 and perovskite phase structure. The effect on the structural and electrical properties of films measured according to Tb content. Dielectric and ferroelectric properties of PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. At 100 kHz, the dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.24, respectively The remanent polarization(2Pr) of the 0.3 mol% Tb-doped PZT thin film was $61.4\;{\mu}C/cm^2$ and the coercive field was 61.9 kV/cm. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1252-1254
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• 2005

High Tc superconducting(HTS) model coil was prepared. Current-voltage(I-V) characteristic curves of model coil, sub-coils and joints were investigated at 77K and other some temperatures. Cooling system for characteristics measurement was made by using G-M cryocooler. At 77K, quench current(Iq) of model coil was 43.9A and the lowest Iq of sub-coils was 38.8A. At 55K, sub coil SP #06 was 106A. So, 100A was chosen as the operating current at 55K with margin. Joule heat of model coil was 0.65W at 100A, operating current and 58K. Joint resistances between sub-coils were about $70n{\Omega}$ at 77K and about $30n{\Omega}$ at 55K.