• Title/Summary/Keyword: C-V characteristic

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Assessing Nitrogen and Phosphorus in Excreta from Grower-finisher Pigs Fed Prevalent Rations in Vietnam

  • Vu, T.K.V.;Sommer, G.S.;Vu, C.C.;Jorgensen, H.
    • Asian-Australasian Journal of Animal Sciences
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    • v.23 no.2
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    • pp.279-286
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    • 2010
  • Livestock production in Vietnam is, as in most Asian countries, increasing rapidly and changing into specialized highly intensified operations. The volume of animal excreta generated exceeds the capacity of the operation land base and cannot be utilized efficiently. As a consequence, there is a loss of plant nutrients from livestock farms that causes environmental pollution. This study carried out a feed and excretion experiment measuring fecal characteristic, daily fecal production, daily nitrogen and phosphorous excretion from grower-finisher pigs fed prevalent rations in Vietnam. Furthermore, equations for assessing the excretion were tested, which can be used in farm models for optimal recycling of manure while focusing on reducing pollution. The results indicated that fecal production and nutrient excretion were affected by the different rations tested. This study showed that five selected equations for predicting excretion from grower-finisher pigs in Danish conditions can also be used with precision in Vietnamese pig farming systems. The equations have been proven valid and can, therefore, be used as a much needed tool for assessing fecal production and nitrogen in excreta on pig farms. The study also showed that about 12% of nitrogen excreted was emitted during housing. Waste water contains more than half of the nitrogen excreted, mainly in ammonium form which has a high potential for gaseous emission.

The Design and Implementation of a Control System for TCSC in the KERI Analog Power Simulator

  • Jeon, Jin-Hong;Kim, Kwang-Su;Kim, Ji-Won;Oh, Tae-Kyoo
    • KIEE International Transactions on Power Engineering
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    • v.4A no.3
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    • pp.129-133
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    • 2004
  • This paper deals with the design and implementation of a TCSC (Thyristor Controlled Series Capacitor) simulator, which is a module for an analog type power system simulator. Principally, it presents configuration of controller hardware/software and its experimental results. An analog type power system simulator consists of numerous power system components, such as various types of generator models, scale-downed transmission line modules, transformer models, switches and FACTS (Flexible AC Transmission System) devices. It has been utilized for the verification of the control algorithm and the study of system characteristics analysis. This TCSC simulator is designed for 50% line compensation rate and considered for damping resister characteristic analysis. Its power rate is three phase 380V 20kVA. For hardware extendibility, its controller is designed with VMEBUS and its main CPU is TMS320C32 DSP (Digital Signal Processor). For real time control and communications, its controller is applied to the RTOS (Real Time Operation System) for multi-tasking. This RTOS is uC/OS-II. The experimental results of capacitive mode and inductive mode operations verify the fundamental operations of the TCSC.

Study on the Characteristic Analysis and the Design of the IGBT Structure with Trap Injection for Improved Switching Characteristics (트랩 주입의 구조적 설계에 따른 LIGBT의 전기적 특성 개선에 관한 연구)

  • Gang, Lee-Gu;Chu, Gyo-Hyeok;Kim, Sang-Sik;Seong, Man-Yeong
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.8
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    • pp.463-467
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    • 2000
  • In this paper, the new LIGBT structures with trap injection are proposed to improve switching characteristics of the conventional SOI LIGBT. The Simulations are performed in order to investigate the effects of the positiion, whidth and concentration of trap injection region with a reduced minority carrier lifetime using 2D device simulator MEDICI. Their electrical characteristics are analyzed and the optimum design parameters are extracted. As a result of simulation, the turn off time for the model A with the trap injection is $0.78\mus$. These results indicate the improvement of about 2 times compared with the conventional SOI LIGBT because trap injection prevents minority carriers which is stored in the n-drift region during turn off switching. The latching current is $1.5\times10^{-4}A/\mum$ and forward blocking voltage is 168V which are superior to those of conventional structure. It is shown that the trap injection is very effective to reduce the turn off time with a little increasing of on-state voltage drop if its design and process parameters are optimized.

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Zinc Sulfide-selenium X-ray Detector for Digital Radiography

  • Park, Ji-Koon;Kang, Sang-Sik;Kim, Jae-Hyung;Mun, Chi-Woong;Nam, Sang-Hee
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.4
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    • pp.16-20
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    • 2002
  • The high bias voltage associated with the thick layer (typically 500-1000 ㎛) of selenium required to have an acceptable x-ray absorption in radiography and fluoroscopy applications may have some practical inconvenience. A hybrid x-ray detector with zinc sulfide-amorphous selenium structure has been developed to improve the x-ray sensitivity of a a-Se based flat-panel digital imaging detector. Photoluminescence(PL) characteristic of a ZnS:Ag phosphor layer showed a light emission peak centered at about 450 nm, which matches the sensitivity spectrum of selenium. The dark current of the hybrid detector showed similar characteristics with that of a a-Se detector. The x-ray sensitivity of hybrid and a-Se x-ray detector was 345 pC/㎠/mR and 295 pC/㎠/mR at an applied voltage of 10 V/㎛, respectively. The purpose of this study was to evaluate the pertinence of a solution using a thin selenium layer, as a photosensitive converter, with a thick coating of silver doped zinc sulfide phosphor.

An Inspection of Stability for Annealing SiOCH Thin Flim (SiOCH 박막의 열처리에 대한 안정성 검토)

  • Park, Yong-Heon;Kim, Min-Seok;Hwang, Chang-Su;Kim, Hong-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.1
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    • pp.41-46
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    • 2009
  • The low dielectric SiOCH films were deposited on p-type Si(100) substrates through the dissociation of BTMSM $(((CH_3)_3Si)_2CH_2)$ precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 to 60 sccm by 2 sccm step into reaction chamber but with the constant flow rate of 60 sccm $O_2$. SiOCH thin films were annealed at $450^{\circ}C$ for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed large reduction of the maximum capacitance yielding low dielectric constant owing to reductions of surface charge density. After exposure at room temperature and atmospheric pressure, dielectric constant of SiOCH films was totally increased. However, annealed SiOCH thin films were more stable than as-deposited SiOCH thin films for natural oxidation.

Structure and Electrical Properties of SiGe HBTs Designed with Bottom Collector and Single Metal Contact (Bottom Collector와 단일 금속층 구조로 설계된 SiGe HBT의 전기적 특성)

  • Choi, A.R.;Choi, S.S.;Yun, S.N.;Kim, S.H.;Seo, H.K.;Shim, K.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.187-187
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    • 2007
  • This paper presents the electrical properties of SiGe HBTs designed with bottom collector and single metal layer structure for RF power amplifier. Base layer was formed with graded-SiGe/Si structures and the collector place to the bottom of the device. Bottom collector and single metal layer structures could significantly simplify the fabrication process. We studied about the influence of SiGe base thickness, number of emitter fingers and temperature dependence (< $200^{\circ}C$) on electrical properties. The feasible application in 1~2GHz frequency from measured data $BV_{CEO}$ ~10V, $f_r$~14 GHz, ${\beta\simeq}110$, NF~1 dB using packaged SiGe HBTs. We will discuss the temperature dependent current flow through the e-b, b-c junctions to understand stability and performance of the device.

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Growth of CdSe thin films using Hot Wall Eptaxy method and their photoconductive properties (HWE에 의한 CdSe 박막의 성장과 광전도 특성)

  • You, Sang-Ha;Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.344-348
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    • 2004
  • The CdSe thin films wee grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are $600^{\circ}C\;and\;430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the timperature range 30K to 150K by impurity scatering and decreased in the temperature range 150K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^7$, the MAPD of 335mV, and the rise and decay time of 10ms and 9.5ms, respectively

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Chemical Interaction in Downstream Flows of SNG/Air Symmetric Premixed Counterflow Flame (SNG/Air 예혼합 대향류 대칭화염의 후류 유동장에서 화학적 상호작용)

  • KANG, YEONSE;LEE, KEEMAN
    • Transactions of the Korean hydrogen and new energy society
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    • v.29 no.6
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    • pp.668-679
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    • 2018
  • Experimental and numerical data were compared through a counterflow burner for the characteristic of basic flame about SNG- C11. In order to use the numerical mechanism accurately, the validation was carried out at strain rate ($a_g=30$, $120s^{-1}$) and the UCSD model showed satisfactory results. The effective Lewis number of the extinction boundary, and the behavior of extinction for the symmetric flames of the SNG-C11, could be explained through the trend of $Le_V$, and the flame of the extinction condition was inspected by the major species, key radicals and the chemical reaction paths. The interactions phenomenon in the merged flames has chemical reaction path for producing $HO_2$ were generated at stagnation point. It can be expected the one of major factors in interaction phenomenon.

Manila clam, Ruditapes philippinarum Cathepsin D: Molecular analysis and immune response against brown ring disease causing Vibrio tapetis challenge

  • Menike, Udeni;Ariyasiri, Krishan;Choi, Jin-Young;Lee, Youngdeuk;Wickramaarachchi, W.D.N.;Premachandra, H.K.A.;Lee, Jehee;De Zoysa, Mahanama
    • The Korean Journal of Malacology
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    • v.29 no.2
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    • pp.155-161
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    • 2013
  • Cathepsins are lysosomal/cysteine proteases belong to papain family (C1 family) that is involved in intracellular protein degradation, antigen processing, hormone maturation, and immune responses. In this study, member of cathepsin family was identified from Manila clam (Mc-Cathepsin D) and investigated the immune response against brown ring disease (BRD) causing Vibrio tapetis challenge. The identified Mc-Cathepsin D gene encodes characteristic features typical for the cathepsin family including eukaryotic and viral aspartyl protease signature domain and two highly conserved active sites ($^{84}VVFDTGSSNLWV^{95}$ and $^{270}IADTGTSLLAG^{281}$). Moreover, MC-Cathepsin D shows higher identity values (-50-70%) and conserved amino acids with known cathepsin D members. Transcriptional results (by quantitative real-time RT-PCR) showed that Mc-Cathepsin D was expressed at higher levels in gills and hemocytes than mantle, adductor muscle, foot, and siphon. After the V. tapetis challenge under laboratory conditions, Mc-Cathepsin D mRNA was up-regulated in gills and hemocytes. Present study indicates that Mc-Cathepsin D is constitutively expressed in different tissues and potentially inducible when infecting BRD by V. tapetis. It is further suggesting that Mc-Cathepsin D may be involved in multiple role including immune response reactions against BRD.

The Action and Pacemaker Potential in the Frog Truncus Arteriosus (개구리 대동맥의 활동전압 및 Pacemaker 전압에 관한 연구)

  • Earm, Yung-E;Sung, Ho-Kyung
    • The Korean Journal of Physiology
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    • v.16 no.2
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    • pp.119-128
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    • 1982
  • The frog truncus arterious were studied with conventional glass microelectrode technique in order to elucidate the underlying mechanism of spontaneous pacemaker activity. The analyses were focussed on the ionic nature of pacemaker current by changing the concentrations of extracellular $K^+$ and, $Na^+$, or by using blockers of K- and Ca-current and chronotropic transmitters. 1) The action potential of the spontaneously active truncus arteriosus has some characteristic feature of maximal distolic potential ranged from -65 to -75 mV, resting potential from -45 to -50 mV and overshoot voltage about +30 mV, respectively. Duration of the action potential taken from rapid upstroke to maximal diastolic potential was about 600 msec. Usual discharge rate was $25{\sim}30/min$ at room temperature $(18{\sim}20^{\circ}C)$. 2) The sensitivity of the resting membrane potential to change extracellular potassium concentrations $(0{\sim}12\;mM)$ was relatively low. Transient hyperpolarization was appeared in the 12 mM K Ringer after 10 min exposure to 0 mM K and it could be related to Na-pump reactivation by high potassium. 3) Reduction of extracellular sodium concetrations diminished the amplitude and frequency of the action potential. In Ringer solution containing 30% Na (substituted by equimolar Tris), spontaneous activity stopped but reappeared as very slow and small action potential. There was no spotaneous activity in zero Na Ringer solution. 4) Caesium(10 mM), K-current blocker decreased the frequency of the action potential and also pacemaker depolarization. Manganese (2 mM) known to be Ca-current antagonist, blocked spontaneous activity completely. 5) Adrenaline and acetylcholine had no chronotropic effect. But adrenaline increased the duration of plateau phase and the magnitude of the action potential in the follower cell. It is concluded that K-, Na-and Ca-current components are involved in the genesis of spontaneous activity of the frog truncus arteriosus like cardiac pacemaker tissues. But the insensitivity of truncus arteriosus to adrenaline and acetylcholine indicates that there are some different control mechanisms of spontaneous rhythm in two tissues.

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