• The Journal of the Korea Contents Association
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• v.14 no.9
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• pp.45-53
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• 2014

In this study, we analyzed the next generation ITS (C-ITS) technology trends, focusing on the national and international C-ITS projects. Based on the promotion practices of developed countries, we pointed out the lack of linkages with the existing ITS infrastructure. As a way to overcome this problem, we proposed the three-direction to enable the existing ITS infrastructure corresponding to the C-ITS. First one is developing a technique to improve the performance of the existing ITS infrastructure and automate the performance management (Performance-enhanced ITS). Second, developing active sensors or fusion sensor which along with V2X communication technology implement of an active safety driving support system (Safety-enhanced ITS). Third, we need to develop a technology that generate the new advanced traffic data by integrating the collected data from existing ITS infrastructure and nomadic device (Cloud-ITS). By improving the function of the existing ITS infrastructure for adaptation to the new V2X communication environment, we enhanced the efficiency of maintenance performance and would maximize the benefit of the introduction of C-ITS.

• Journal of Internet of Things and Convergence
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• v.2 no.1
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• pp.35-40
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• 2016

One of the next generation of automotive V2V communication technology is a core technology for next-generation ITS as a technique used for communications between the vehicle. Looking at the existing V2V communication using the pseudonym certificate authentication service structure to meet the security requirements for privacy protection. Since the issuance of multiple certificates when needed authority in issuing and managing to use the pseudonym certificate issued once and it takes a lot of time. In this paper, we present the method utilizing a vehicle ID to meet the security requirements for the privacy protection without the use of a pseudonym certificate.

• Journal of the Korean Vacuum Society
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• v.2 no.1
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• pp.65-72
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• 1993

MgGa2-xInxSe4 single crystal을 bridgman technique로 성장시켰다. 성장된 단결정은 rhombohedral 구조를 가지고 있었으며, lattice constant는 a=3.950~4.070$\AA$, c=38.89~39.50$\AA$으로 주어졌고, 높은 photoconductivity를 가지고 있었다. 이 단결정의 energy gap은 2.20~1.90eV이었고, photoconductivity spectrum에 peak의 energy는 2.31~2.01eV로 주어졌으며, photoconductivity의 time constant는 0.24~0.34sec로 주어졌다.

• Journal of the Korean Society for Nondestructive Testing
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• v.13 no.2
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• pp.40-47
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• 1993

Composites composed of a precipitation harden 2124 alloy matrix reinforced by SiC whiskers, which are fabricated by powder metallugy, are suscepttible to fatigue damage due to the pile-up of moving dislocation and the microcrack initiation along SiC-Al interfaces, especially at the external surfaces of a body. The initial process, such as pile-up of dislocation or microcrack, that corresponds to the stage I during fatigue failure process are too small to be detected and characterized by conventional ultrasonic technique. This paper describes the applicability of an acoustic microscope with Line-Focus-Beam(LFB) lens of 225MHz to evaluate fatigue damage of SiC whiskers reinforced Al alloy. The specimens which were 6.6mm thick, 13mm wide, and 105mm long in the gage section were fatigued in tension-tension under load control. The velocity of leaky surface and leaky pseudosurface acoustic waves are obtained by FFT analysis technique from V(z) curve which is a record of output of piezoelectric transducer. These results are discussed with the change of number of fatigue cycles. The result obtained by acoustic microscope is compared with that by ultrasonic technique generated at 5MHz with conventional surface wave transducers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.743-749
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• 2002

A 1.5V 70㏈ 100MHz CMOS class-AB complementary operational amplifier is presented. For obtaining the high gain and the high unity gain frequency, the input stage of the amplifier is designed with rail-to-rail complementary differential pairs which are symmetrically parallel-connected with the NMOS and the PMOS differential input pairs, and the output stage is designed to the rail-to-rail class-AB output stage including the elementary shunt stage technique. With this design technique for output stage, the load dependence of the overall open loop gain is improved and the push-pull class-AB current control can be implemented in a simple way. The designed operational amplifier operates perfectly on the complementary mode with 180$^{\circ}$ phase conversion for 1.5V supply voltage, and shows the push-pull class-AB operation. In addition, the amplifier shows the DC open loop gain of 70.4 ㏈ and the unity gain frequency of 102 MHz for $C_{L=10㎊∥}$ $R_{L=1㏁}$ Parallel loads. When the resistive load $R_{L}$ is varied from 1 ㏁ to 1 ㏀, the DC open loop gain of the amplifier decreases by only 2.2 ㏈.a$, the DC open loop gain of the amplifier decreases by only 2.2 dB.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1025-1028
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• 2005

Microcrystalline Si (${\mu}c-Si$) TFTs were fabricated using a conventional bottom gate amorphous Si (a-Si) process. A unique ${\mu}c-Si$ deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the ${\mu}c-Si$ an $N_2$ plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of ${\mu}c-Si$ TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 ${\mu}A$ was achieved with $V_{data}$ of 10 V. After the simulation, a linear equation for the pixel current was suggested.

• Korean Journal of Plant Resources
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• v.19 no.6
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• pp.665-669
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• 2006

Somatic embryos do not survive at exposure to liquid nitrogen temperatures without cryoprotective treatments. A simplified technique which simultaneously induces and cryoprotects embryogenic calli using plant vitrification solution 2 (PVS2) followed by dehydration was developed for the cryopreservation of Soap berry genetic resources. Vitrification is a way of removing the moisture in vegetation through PVS2. The PVS2 vitrification solution consisted of 30% glycerol (w/v), 15% ethylene glycol (w/v), 15% Dimethylsulfoxide (w/v) in B5 medium containing 0.4M sucrose. Two tests were done. The one was to eliminate moisture at $0^{\circ}C$ and the other at $25^{\circ}C$. In both cases the best results came out at a vitrification time of $10{\sim}20$ minutes. It was also found that the survival rate was higher at $0^{\circ}C$ than at $25^{\circ}C$. In particular, the survival rate reached more than 80%. Water-damaged embryos turned brown and stoped growth, but energetic embryos took on a milky hue and show a very vigorous growth rate. Successful cryopreservation of somatic embryos of soapberry can be used to establish in vitro genebanks for long-term conservation of Soapberry genetic resources to complement field genebanks and other in vitro methods already being used.

• Transactions on Electrical and Electronic Materials
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• v.5 no.2
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• pp.71-75
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• 2004

This paper proposes a new bandgap reference (BGR) circuit which takes advantage of a cascode current mirror biasing to reduce the V$\_$ref/ variation, and sizing technique, which utilizes two related ratio numbers k and N, to reduce the PNP BJT area. The proposed BGR is designed and fabricated on a test chip with a goal to provide a reference voltage to the 10 bit A/D(4-4-4 pipeline architecture) converter of the CMOS Active Pixel Sensor (APS) imager to be used in X-ray imaging. The basic temperature variation effect on V$\_$ref/ of the BGR has a maximum delta of 6 mV over the temperature range of 25$^{\circ}C$ to 70$^{\circ}C$. To verify that the proposed BGR has radiation hardness for the X-ray imaging application, total ionization dose (TID) effect under Co-60 exposure conditions has been evaluated. The measured V$\_$ref/ variation under the radiation condition has a maximum delta of 33 mV over the range of 0 krad to 100 krad. For the given voltage, temperature, and radiation, the BGR has been satisfied well within the requirement of the target 10 bit A/D converter.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.219-226
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• 2000

Amorphous Ge20As20Se60 chalcogenide thin films were prepared by spin coating technique from mixed solutions of As40Se60 and Ge40Se60 dissolved in ethylenediamine. Films were prepared at a roating speed of 3500 rpm and spinning time was 10 second and heat-treateed at 27$0^{\circ}C$ for 1 hour. The resulting film thickness and RMS roughness were approximately 340 nm and 15$\AA$. Photostructure changes were investigated with 514.5nm Ar+ laser irradiation and heat-treatment. After Ar+ laser irradiation, transmittance and transmission efficiency decreased respectively up to 24.9% at 2.43 eV and 67.5% at 3.27 eV, and absorption edge shifted toward long wavelength. Optical bandgap changed from 2.03 to 1.83 eV, and absoprtion coefficient and absorption efficiency increased up to 0.33$\times$105cm-1 at 3.37eV and 88.3% at 1.31 eV, respectively. These photodarkening state were recovered reversibly by heat-treatment at 27$0^{\circ}C$ for 1 hour. Photodarkening and thermal bleaching effects by laser irradiation and heat-treatment revealed reversible amorphous-to-amorphous transition varying only coordination number.

• Korean Journal of Materials Research
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• v.18 no.1
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• pp.22-25
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• 2008

In this study, calcium titanate $(CaTiO_3)$ gel was prepared by mixing calcium nitrate and titanium isopropoxide in 2-methoxy-ethanol. $CaTiO_3$ gel was single-layer coated on Ti-6Al-4V using a sol-gel dip-coating technique. The coating was calcined at $750^{\circ}C$ in air by utilizing a very slow heating rate of $2^{\circ}C/min$. The crystalline phases of the coating were characterized by x-ray diffraction using a slow scan rate of $1^{\circ}/min$. The morphology of the coating was analyzed by scanning electron microscopy. The corrosion behavior of Ti-6Al-4V samples coated with $CaTiO_3$ films were tested in an artificial saliva solution by potentiodynamic polarization and were quantified by the Tafel extrapolation method. The electrochemical parameters showed a considerable increase in the corrosion resistance for the $CaTiO_3$-coated Ti-6Al-4V samples compared to bare substrates.