• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.6
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• pp.525-535
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• 2004

In this paper, a two-phase DZRCD(Dual Zero Vector Modes RCD) technique is proposed to develope the problem of a conventional two-phase RCD-PWM (Random Centered Distribution PWM) which gives the power spectra of narrow band range in the high modulation index (M). In the proposed DZRCD technique, the zero vector $V_0$ is selected as $V_0$(111) for M$\geqq$0.8. Also, $V_0$ is selected as $V_0$(000) for the modulation indices < 0.8. For the unplementation of the proposed method, a 16-bit micro-controller Cl67 was used and the experiments were conducted with the 1.5kw induction motor under no load condition. The experimental results show that the voltage / current spectra is spread to a wide band range, and the switching noise of motor is reduced by the proposed method compared to the conventional random operation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.11
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• pp.1176-1183
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• 2003

In this paper, miniature voltage-controlled oscillator(VCO) for 1.6 ㎓ PCS band is designed and implemented using the LTCC technique. Circuit level design using commercial components is performed, and passive L, C elements embedded in LTCC substrate is optimized by simulation tools. Embedded passive components are modeled into equivalent circuits and their circuit parameters are extracted for circuit simulation. Utilizing the designed embedded passive elements and 21 layers LTCC substrate, VCO with 4.0${\times}$4.0${\times}$1.6 ㎣ dimensions is designed and fabricated. Developed VCO operates in 2.7 V with 8.5 ㎃ current consumption. The phase noise performance of VCO is below -112.61 ㏈c/㎐ at 100 ㎑ offset and harmonic suppression characteristics is measured above -30 ㏈.

• Journal of the Korean Ceramic Society
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• v.22 no.4
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• pp.26-32
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• 1985

The subcritical crack growth of sintered SiC is investigated under various corrosive atmospheres such as distilled water Murakami solution and saturated KOH solution. The KI-V diagrams are obtained by the load relaxation method and incremental displacement rate method using the double torsion technique. The obtained fracture mechanics parameters (n) of sintered SiC are 79 in Murakami solution and 39 in saturated KOH solution. These data indicate that the subcritical crack growth of sintered SiC is taking place in these two conditions and the stress-corrosion cracking is suggested to be the mechanism. With these KI-V diagrams the life of sintered SiC in these conditions is predicted.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.198-202
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• 2002

$HfO_2$films were grown on Si substrate in the temperature range $250~550^{\circ}C$ using metal organic chemical vapor deposition (MOCVD) technique for a gate dielectric. Hafnium tart-butoxide and Oxygen gas were used as precursors and N2 was used as carrier gas. Impurity distribution and film structure(including interfacial layer) were studied at the deposition temperature range between 25$0^{\circ}C$ and $550^{\circ}C$. The growth rate and impurty distribution decreased with increasing temperature. The electrical properties of $HfO_2$were investigated with C-V, 1-V method and showed it has a good properties as a gate dielectric.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.13-18
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• 2000

We have fabricated LB ultra-thin films of maleate system by LB technique and evaluated the deposited status of LB ultra-thin films by I-V characteristics such as capacitance. It was found that the thickness of LB ultra-thin per layer is $27~30[{\AA}]$ by XRD. And, we have known that the conductivity along the horizontal direction of LB ultra-thin films was about $10^{-8}[S/cm]$, it corresponds to the semiconducting materials. Also, the I-V characteristics along the vertical direction of LB ultra-thin films was dominated by Schottky type current, the activation energy obtained by current-temperature characteristics was about 0.84[eV] and the conductivity was about $10^{-14}[S/cm]$, it corresponds to the insulator. And, the anisotropic conduction mechanism of the LB ultra-thin films in vertical direction and horizontal direction is determined by the hydrophilic group and the hydrophobic group in LB ultra-thin films. The above results are applicable to the semiconductor devices such as switching device, which function at the molecular level.

• Journal of the Korean Ceramic Society
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• v.40 no.3
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• pp.213-218
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• 2003

Band gap energies of SrTiO$_3$(STO) thin film on glass substrates were studied in terms of annealing temperature. The STO thin film was fabricated by our newly developed method based on the combination of the Self-Assembled Monolayer(SAM) technique and the Liquid Phase Deposition(LPD) method. The as-deposited film demonstrated a direct band gap energy of about 3.65 eV, which further increased to 3.73 eV and 3.78 eV by annealing at 40$0^{\circ}C$ and 50$0^{\circ}C$, respectively. The band gap energy saturated at about 3.70 eV for the crystallized film which was obtained by annealing at 600-$700^{\circ}C$. The relatively large band gap energies of our crystallized films were due to the presence of minor amorphous phase, grain boundaries and oxygen vacancies generated by annealing in air.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.442-450
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• 1999

In this paper, we have fabricated Langmuir-Blodgett(LB) films by LB technique and evaluated the deposited status of LB films by UV-vis absorbance. It was found thatthe thickness of LB films per a layer are $27~30[{\AA}]$ by ellipsometry. The responeses between LB films and organic gases were investigated using by I-V characteristics of LB films and F-R diagram of quartz crystal. The response orders between LB films and organic gases observed by I-V characteristics were as following ; chloroform, methanol, acetone and ethanol in the order of their short chain length. The response mechanism between LB films and organic gases observed by F-R diagram of quartz crystal could be modeled on adsorption at surface, penetration, desorption at surface and inside.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.6
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• pp.341-345
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• 2000

This paper analysed the induced electric field of human body under the 765 kV transmission line considering permittivity and conductivity. As permittivity of human body is very high as 106 at 60 Hz, special numerical computation technique is Surface Charge Method(SCM) for composite media with extremely different properties is applied to reduce calculation error of induced electric field inside the human body.

• Current Photovoltaic Research
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• v.4 no.4
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• pp.150-154
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• 2016

Mg and In co-doped ZnO (MIZO) thin films with transparent conducting characteristics were successfully prepared on glass substrates by RF magnetron sputtering technique. The Influence of different substrate temperature (from RT to $400^{\circ}C$) on the structural, morphological, electrical, and optical properties of MIZO thin films were investigated. The MIZO thin film prepared at the substrate temperature of $350^{\circ}C$ showed the best electrical characteristics in terms of the carrier concentration ($4.24{\times}10^{20}cm^{-3}$), charge carrier mobility ($5.01cm^2V^{-1}S^{-1}$), and a minimum resistivity ($1.24{\times}10^{-4}{\Omega}{\cdot}cm$). The average transmission of MIZO thin films in the visible range was over 80% and the absorption edges of MIZO thin films were very sharp. The bandgap energy of MIZO thin films becomes wider from 3.44 eV to 3.6 eV as the substrate temperature increased from RT to $350^{\circ}C$. However, Band gap energy of MIZO thin film was narrow at substrate temperature of $400^{\circ}C$.

• Journal of Environmental Science International
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• v.23 no.4
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• pp.715-722
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• 2014

Effects of coagulation types on flocculation were investigated by using a photometric dispersion analyzer (PDA) as an on-line monitoring technique in this study. Nakdong River water were used and alum and ferric chloride were used as coagulants. The aim of this study is to compare the coagulation characteristics of alum and ferric chloride by a photometric dispersion analyzer (PDA). Floc growing rates ($R_v$) in three different water temperatures ($4^{\circ}C$, $16^{\circ}C$ and $30^{\circ}C$) and coagulants doses (0.15 mM, 0.20 mM and 0.25 mM as Al, Fe) were measured. The floc growing rate ($R_v$) by alum was 1.8~2.8 times higher than that of ferric chloride during rapid mixing period, however, for 0.15 mM~0.25 mM coagulant doses the floc growing rate ($R_v$) by ferric chloride was 1.1~2.3 times higher than that of alum in the slow mixing period at $16^{\circ}C$ water temperature. Reasonable coagulant doses of alum and ferric chloride for turbidity removal were 0.1 mM (as Al) and 0.2 mM (as Fe), respectively, and the removal efficiency of those coagulant doses showed 94% for alum and 97% for ferric chloride. The appropriate coagulant dose of alum and ferric chloride for removing dissolved organic carbon (DOC) showed about 0.3 mM (as Al, Fe) and at this dosage, DOC removal efficiencies were 36% and 44%, and ferric chloride was superior to the alum for removal of the DOC in water.