• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.895-900
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• 2000

In this paper, C-V characteristics based on the structure of GaAs MESFET’s has been proposed with wide range of applied voltages and temperatures. Small signal capacitance; gate-source and gate-drain capacitances are represented by analytical expressions which are classified into two different regions; linear and saturation regions with bias voltages. The expression contains two variables; the built-in voltage( $V_{vi}$ )and the depletion width(W). Submicron gate length MESFETs has been selected to prove the validity of the theoretical perdiction and shows good agreement with the experimental data over the wide range of applied voltages.

• Progress in Medical Physics
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• v.25 no.3
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• pp.185-192
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• 2014

The purpose of this study is to evaluate the results for the quality assurance through a statistical analysis on the output characteristics of linear accelerators belonging to Yeungnam University Medical Center by using the Shewhart-type chart, Exponentially weighted moving average chart (EWMA) chart, and process capability indices $C_p$ and $C_{pk}$. To achieve this, we used the output values measured using respective treatment devices (21EX, 21EX-S, and Novalis Tx) by medical physicists every month from September, 2012 to April, 2014. The output characteristics of treatment devices followed the IAEA TRS-398 guidelines, and the measurements included photon beams of 6 MV, 10 MV, and 15 MV and electron beams of 4 MeV, 6 MeV, 9 MeV, 12 MeV, 16MeV, and 20 MeV. The statistical analysis was done for the output characteristics measured, and was corrected every month. The width of control limit of weighting factors and measurement values were calculated as ${\lambda}=0.10$ and L=2.703, respectively; and the process capability indices $C_p$ and $C_{pk}$ were greater than or equal to 1 for all energies of the linear accelerators (21EX, 21EX-S, and Novalis Tx). Measured values of output doses with drastic and minor changes were found through the Shewhart-type chart and EWMA chart, respectively. The process capability indices $C_p$ and $C_{pk}$ of the treatment devices in our institution were, respectively, 2.384 and 2.136 for 21EX, 1.917 and 1.682 for 21EX-S, and 2.895 and 2.473 for Novalis Tx, proving that Novalis Tx has the most stable and accurate output characteristics.

• Journal of Environmental Health Sciences
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• v.29 no.2
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• pp.94-102
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• 2003

This study was carried out to investigated the distribution and characteristics of Vibrio spp. isolated from fish and shellfish, seawater and brackish water samples collected from Pohang, Uljin, Yeongduk and Gyeongju in Gyeongbuk Province from April 2000 to October 2000. Total 155 strains of genus Vibrio were isolated from 439 collected samples, and numbers of isolated strains of V. parahaemolyticus and V. vulnificus were 140 and 15, respectively. The isolation rate from the samples collected in Pohang was the highest as 41.5% (76 strains), and wat the highest as 71.4% (30 strains) in brackish water, and was the highest as 55.7% (34 strains) in August. And the optimal pH, temperature, and NaCl concentration for growth of V. parahaemolyticus and V. cholerae were 8.0, 3$0^{\circ}C$ and 2.0％, respectively. In a resistance test for environmental factors, heat and cold resistants of V. parahaemolyticus were higher than those of V. vulnificus, withstanding for 15 minutes at 6$0^{\circ}C$ and 6 days at -18$^{\circ}C$. The pH range for existence of V. parahaemolyticus and V. vulnificus were 4.5~l1.0 and 4.5~10.0, showing the similar resistance to pH. V. parahaemolyticus and V. vulnificus could grow in media containing up to 10.0% and 7.0% NaCl, respectively, Salt-tolerance of V. parahaemolyticus was higher than that of V. vulnificus. In an antibiotics sensitivity test against 16 strains of V. parahaemolyticus, twelve strains were resistant to ampicillin, eight strains were resistant to cephalothin. one strain was resistant to streptomycin, and one strain was resistant to ticarcillin.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.442-450
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• 1999

In this paper, we have fabricated Langmuir-Blodgett(LB) films by LB technique and evaluated the deposited status of LB films by UV-vis absorbance. It was found thatthe thickness of LB films per a layer are $27~30[{\AA}]$ by ellipsometry. The responeses between LB films and organic gases were investigated using by I-V characteristics of LB films and F-R diagram of quartz crystal. The response orders between LB films and organic gases observed by I-V characteristics were as following ; chloroform, methanol, acetone and ethanol in the order of their short chain length. The response mechanism between LB films and organic gases observed by F-R diagram of quartz crystal could be modeled on adsorption at surface, penetration, desorption at surface and inside.

• Journal of ILASS-Korea
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• v.22 no.1
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• pp.29-35
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• 2017

This paper describes the effects of spray breakup model constants on spray and combustion characteristics in single cylinder compression engine. KIVA-3V code coupled with a CHEMKIN chemistry solver was used for numerical analysis. In this study, spray simulations and combustion simulations are studied simultaneously. Spray simulation was conducted in constant volume to reduce the effects of air-flow as swirl or tumble. The model validation was conducted and there are little difference between experiments and simulation, this differences were reasonable. In spray simulation, the effects of model constants on spray tip penetration, spray patter and SMD were studied. Furthermore, the analysis of effects of breakup variables on combustion and emissions characteristics was conducted. The results show the KH-RT breakup model constants affects spray and combustion characteristics strongly. Increasing KH model variable (B1) and RT model constants ($C_{\tau}$, $C_{RT}$) induced slower breakup time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.473-476
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• 1999

PMOS capacitors with Ce-policide electrode were fabricated by the SADS method to study the effects of activation condition on the C-V characteristics. For the activation temperature of $600^{\circ}C$ , the capacitor using CoSi$_2$ formed from Co/Ti bilayer as diffusion source showed excellent C-V properties and the increase in V$_{th}$ with the increasing activation time. But impurties into the oxide.e.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.789-794
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• 1986

The current-voltage characteristics of ion-implanted GaAs MESFET's have been simulated by using the velocity saturation model. Using this model, a MESFET with threshold voltage of -0.5V and transconductance of 460 mS/mm is designed. To implement high transconductance MESFET's, low energy ion-implantation (20 keV) and RTP(Rapid Thermal Process) activation ($575^{\circ}C$, 5sec) processes are required.

• Advances in nano research
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• v.12 no.1
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• pp.25-35
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• 2022

Within the framework of the density functional theory combined with the method of non-equilibrium Green's functions (DFT + NEGF), the features of electron transport in fullerene nanojunctions, which are «core-shell» nanoobjects made of a combination of fullerenes of different diameters C₂₀, C₈₀, C₁₈₀, placed between gold electrodes (in a nanogap), are studied. Their transmission spectra, the density of state, current-voltage characteristics and differential conductivity are determined. It was shown that in the energy range of -0.45-0.45 eV in the transmission spectrum of the "Au-C₁₈₀-Au" nanojunction appears a HOMO-LUMO gap with a width of 0.9 eV; when small-sized fullerenes C₂₀, C₈₀ are intercalation into the cavity C₁₈₀ the gap disappears, and a series of resonant structures are observed on their spectra. It has been established that distinct Coulomb steps appear on the current-voltage characteristics of the "Au-C₁₈₀-Au" nanojunction, but on the current-voltage characteristics "Au-C₈₀@C₁₈₀-Au", "Au-(C₂₀@C₈₀)@C₁₈₀-Au" these step structures are blurred due to a decrease in Coulomb energy. An increase in the number of Coulomb features on the dI/dV spectra of core-shell fullerene nanojunctions was revealed in comparison with nanojunctions based on fullerene C₆₀, which makes it possible to create high-speed single-electron devices on their basis. Models of single-electron transistors (SET) based on fullerene nanojunctions "Au-C₁₈₀-Au", "Au-C₈₀@C₁₈₀-Au" and "Au-(C₂₀@C₈₀)@C₁₈₀-Au" are considered. Their charge stability diagrams are analyzed and it is shown that SET based on C₈₀@C₁₈₀-, (C₂₀@C₈₀)@C₁₈₀- nanojunctions is output from the Coulomb blockade mode with the lowest drain-to-source voltage.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.342-344
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• 1995

Using piezoresistive effects of single-crystal and poly-crystalline silicon, pressure sensors of the same pattern were fabricated for comparison of temperature characteristics. Optimum size and aspect ratio of rectangular sensor diaphragm were calculated by FEM. For polsilicon pressure sensor, polysilicon resistors of Wheatstone bridge were deposited by LPCVD to be used in a wide' temperature range. Polysilicon pressure sensors showed more stable temperature characteristics than single-crysta1 silicon in the range of $-20\sim125[^{\circ}C]$. To get low TCO (Temperature Coefficient of Offset), below $\pm$3 [${\mu}V/V/^{\circ}C$], it is needed for each TCR of piezoresistors to have a deviation within $\pm25[ppm/^{\circ}C]$ less than $\pm500[ppm/^{\circ}C]$ of resistors for polysilicon pressure sensor can result in low TCS(Temperature Coefficient of Sensitivity) of -0.1[%FS/$^{\circ}C$].

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.333-340
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• 1996

The properties of TiN as a barrier against Cu diffusion ere studied by sheet resistance measurement, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and capacitance-voltage(C-V) measurement. The sensitivities of the various methods were compared. Specimens with Cu/TiN/Ti/SiO2/Si structure were prepared by various deposition techniques and annealed at various temperatures ranging from $500^{\circ}C$ to $800^{\circ}C$ in 10%H2/90%Ar ambient for hours. As the effectiveness of the barrier property of TiN against Cu diffusion was vanished, the irregular-shaped sports were observed and outdiffused Si were detected on the surface of the Cu thin film. The C-V characteristics of the MOS capacitors varied drastically with annealing temperatures. In C-V measurement, the inversion capacitance decreased at annealing temperature range from $500^{\circ}C$ to $700^{\circ}C$ and increased remarkably at $800^{\circ}C$. These variations may be due to the Cu diffusion through TiN into $SiO_2$ and Si.