Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1999.05a
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- Pages.473-476
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- 1999
Electrical Properties of Cobalt Polycide Gate
코발트 폴리사이드 게이트의 전기적 특성
Abstract
PMOS capacitors with Ce-policide electrode were fabricated by the SADS method to study the effects of activation condition on the C-V characteristics. For the activation temperature of
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