• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.546-548
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• 2005

This paper proposes a unity power factor ZVT PWM single-phase rectifier. The ZVT soft switching are achieved by using a simple ZVT circuit, and the reduced conduction losses are achieved by employing a single-stage converter, instead of a typical double-stage converter composed of front end diode rectifier and cascaded boost rectifier. Furthermore, thanks to good features such as simple PWM control at constant frequency, low switch stress and low VAR rating of commutation circuits, it is suitable for high power applications. The principle of operation is explained in detail, and simulation results of the new converter are also included.

• Journal of Magnetics
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• v.16 no.2
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• pp.173-176
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• 2011

Fe-Cr alloys with different Cr contents were prepared by an arc melting technique. The alloys were isochronally aged in the range from $400^{\circ}C$ to $900^{\circ}C$ with $50^{\circ}C$ steps with a holding time of 100 hours. The ageing produced embrittlement in the alloys due to either the formation of a Cr-rich ${\alpha}'$ phase or a $\sigma$ phase at high temperatures. Magnetic Hysteresis Loop (MHL) and Micro-Vickers hardness were measured at each step to correlate the magnetic and mechanical properties. Coercivity and hardness of the alloys were increased and remanence decreased up to 500-$550^{\circ}C$ due to formation of a Cr-rich ${\alpha}'$ phase. Beyond 500-$550^{\circ}C$ range, the coercivity and hardness decreased and remanence increased due to the coarsening or dissolution of the Cr-rich ${\alpha}'$ phase. In the Fe-48% Cr alloy, formation of the $\sigma$ phase at $700^{\circ}C$ reduced the maximum induction of the alloy significantly.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.1
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• pp.6-10
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• 2007

The a-plane GaN layer on r-plane $Al_2O_3$ substrate is grown by mixed-source hydride vapor phase epitaxy (HVPE). The GaN/InGaN heterostructure is performed by selective area growth (SAG) method. The heterostructure consists of a flown over mixed-sourec are used as gallium (or indium) and nitrogen sources. The gas flow rates of HCl and $NH_3$ are maintained at 10 sccm and 500 sccm, respectively. The temperatures of GaN source zone is $650^{\circ}C$. In case of InGaN, the temperature of source zone is $900^{\circ}C$. The grown temperatures of GaN and InGaN layer are $820^{\circ}C\;and\;850^{\circ}C$, respectively. The EL (electroluminescence) peak of GaN/InGaN heterostructure is at nearly 460 nm and the FWHM (full width at half maximum) is 0.67 eV. These results are demonstrated that the heterostructure of III-nitrides on r-plane sapphire can be successfully grown by mixed-source HVPE with multi-sliding boat system.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.839-844
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• 2014

The gas-phase radical-radical reaction $O(^3P)$ + $C_2H_5$ (ethyl) ${\rightarrow}$ $H(^2S)$ + $CH_3CHO$(acetaldehyde) was investigated by applying a combination of vacuum-ultraviolet laser-induced fluorescence spectroscopy in a crossed beam configuration and ab initio calculations. The two radical reactants $O(^3P)$ and $C_2H_5$ were respectively produced by photolysis of $NO_2$ and supersonic flash pyrolysis of the synthesized precursor azoethane. Doppler profile analysis of the nascent H-atom products in the Lyman-${\alpha}$ region revealed that the average translational energy of the products and the average fraction of the total available energy released as translational energy were $5.01{\pm}0.72kcalmol^{-1}$ and 6.1%, respectively. The empirical data combined with CBS-QB3 level ab initio theory and statistical calculations demonstrated that the title exchange reaction is a major channel and proceeds via an addition-elimination mechanism through the formation of a short-lived, dynamical addition complex on the doublet potential energy surface. On the basis of systematic comparison with several exchange reactions of hydrocarbon radicals, the observed small kinetic energy release can be explained in terms of the loose transition state with a product-like geometry and a small reverse activation barrier along the reaction coordinate.

• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.6
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• pp.536-543
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• 2004

Slotless Permanent Magnet Brushless DC Motor(PM BLDC) with the characteristics of high speed and power density has been more widely used In Industrial and factory machine. Generally, PM BLDC meter is necessary that the three Hall-lCs evenly be distributed around the stator circumference in case of the 3 phase motor. The Hall-ICs are set up in PM BLDC Motor to detect the main flux from the rotor. therefore the output signal from Hall-ICs is used to drive a power transistor to control the stator winding current. However, instead of using three Hall-ICs, if it used only one Hall-IC, we can estimate information of the others phase in sequence through a rotor This paper identified the characteristics and performance by using one Hall-IC with the 3-phase, 2-pole, 6-slot PM BLDC motor.

• Proceedings of the Korean Magnestics Society Conference
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• 1993.11a
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• pp.34-34
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• 1993

• Microbiology and Biotechnology Letters
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• v.15 no.2
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• pp.122-128
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• 1987

Lipases from Candida rogosa and Rhizopus arrhizus were immobilized by entrapment with photo-crosslinkable resin prepolymer for the study of fat splitting and interesterification in isooctane-two phase system. Dioctylsulfosuccinate was selected as the most suitable surfactant during the immobilization. Lipase entrapped with hydrophobic photo-crosslinkable resin prepolymer(ENTP-3000) exhibited the highest activity, whereas lipase entrapped with hydrophilic gel(ENT-4000) was more stable in organic solvent. As the degree of hydrophobicity of the immobilization matrix was increased, Vm(app) of the lipase entrapped was increased, but Km(app) was approximately constant. While the optimum pH of the lipases entrapped on hydrophilic gel (ENT-4000) were around pH 7.0 for Candida lipase and Rhizopus lipase, the reaction rate of the lipases entrapped on hydrophobic gel were less dependent on pH variations for short reaction time. However, for longer reaction time, the lipnses from C. rugosa and R. arrhizus entrapped on hydrophobic gel yielded maximum rate at pH 6.0 and 6.5, respectively, Entrapment method endowed the lipase with thermal stability.

• Proceedings of the KSME Conference
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• 2000.04b
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• pp.347-352
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• 2000

The pressure drop characteristics of R-22 and R-410A(a mixture of 50wt% R-32 and 50wt% R-125) flowing in a small diameter tube with 1.77[mm] inner diameter and 3.14[mm] outer diameter was investigated experimentally. the mass fluxes of refrigerants are ranged from 450 to $1050[kg/(m^2{\cdot}s)]$ and the qualites are varied from 0.05 to 0.95. The main experimental results were summarized as follows; The single-phase liquid friction factors for small diameter tubes are higher than those predicted by the Blasius equation. In case of two-phase flow, the pressure gradient of the small diameter tube increases with increasing mass velocity and vapor quality. The experimental data are not well correlated by predictions which were proposed for the large diameter tube.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.246-249
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• 1995

This paper proposed a partial resonant swtiching three-phase high power factor converter using a lossless snubber. The proposed converter has a merit of simple controlled circuit because tile input current control discontinuously. And it is improve to input power factor that the snubber capacitor's energy regenerate to the AC source side. This topology is reduced a current/voltage stresses of resonant devices in addition to a partial resonant strategy. The result of simulations with the proposed topology included in this paper.

• Proceedings of the KIEE Conference
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• 1995.07a
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• pp.212-215
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• 1995

In this paper, The characteristic of Harmonic spectrum is studied for generally used three-phase diode rectifier. and filter design criteria is showen in the sense of THD, DPF, and PF. As the becoming of Automative and informative era, the demand of critical and stable control becomes more and more important. But much EMI emissions are generated for more critical and stable control in power electronic system these EMI emissions can be measured using LISN(Line Impedance Stabilization Network). So we are to investigate the behavior of Conducted EMI emission in Diode Rectifiers using LISN in frequency domain.