• Proceedings of the Acoustical Society of Korea Conference
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• spring
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• pp.206-209
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• 1999

본 논문은 실제 해양에서 표적의 탐지거리 계산에 필요한 전달손실을 신속, 정확하게 계산하기 위해 가용한 모델을 확보하고, 확보된 모델의 검증을 통해 사용 가능한 범위에 대한 지침을 마련하고자 한다. 연구를 위해 확보된 모델은 포물선 방정식 모델의 RAM, 정상모드 모델의 KrakenC, 고속음장 모델의 OASES이다. 각 모델을 같은 환경에서 주파수를 변화시켜 가며 비교하였고 완전해를 제공하는 OASES를 기준으로 결과를 비교해 본 결과 KrakenC의 경우, 저주파에서 전달손실은 거의 일치하거나 2-3dB 정도의 차이를 보였고, ram의 경우는 KrakenC에 비하여 일치하는 정도가 훨씬 낮았다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.222-227
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• 2004

The sub-bitline (SBL) sensing voltage of a cell and total cell array can be measured by the method of SBL voltage evaluation method. The MOSAID tester can collect all SBL signals. The hierarchical bitline of unit cell array block is composed of the cell array of 2k rows and 128 columns, which is divided into 32 cell array sections. The unit cell array section is composed of the cell array of 64 rows and 128 columns. The average sensing voltage with 2Pr value of $5{\mu}C/cm^2$ and SBL capacitance of 40fF is about 700mV at 3.0V operation voltage. That is high compensation method for capacitor size degradation effect. Thus allowed minimum 2Pr value for high density Ferroelectric RAM (FeRAM) can move down to about less than $5{\mu}C/cm^2$.

• Nuclear Engineering and Technology
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• v.34 no.5
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• pp.468-481
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• 2002

There are 4 CANDU6 type reactors operating at Wolsong site. For fuelling operation of certain fuel channels (with flow less than 21.5 kg/s) a FARE flow Assist Ram Extension) device is used. During the refuelling operation, two remote controlled F/Ms (Fuelling Machines) are attached to a designated fuel channel and carry out refuelling job. The upstream F/M inserts new fuel bundles into the fuel channel while the downstream F/M discharges spent fuel bundles. In order to assist fuelling operation of channels that has lower coolant How rate, the FARE device is used instead of F/M C-ram to push the fuel bundle string. The FARE device is essentially a How restricting element that produces enough drag force to push the fuel bundle string toward downstream F/M. Channels that require the use of FARE device for refuelling are located along the outside perimeter of reactor. This paper presents the FARE device design feature, steady state hydraulic and operational characteristics and behavior of the device when coupled with fuel bundle string during fuelling operation. The study showed that the steady state performance of FARE device meets the design objective that was confirmed by downstream F/M C-ram force to be positive.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.3
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• pp.111-115
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• 2006

We investigated accelerated soft error rate(ASER) in 8M static random access memory(SRAM) cells. The effects on ASER by well structure, operational voltage, and cell transistor threshold voltage are examined. The ASER decreased exponentially with respect to operational voltage. The chips with buried nwell1 layer showed lower ASER than those either with normal well structure or with buried nwell1 + buried pwell structure. The ASER decreased as the ion implantation energy onto buried nwell1 changed from 1.5 MeV to 1.0 MeV. The lower viscosity of the capping layer also revealed lower ASER value. The decrease in the threshold voltage of driver or load transistor in SRAM cells caused the increase in the transistor on-current, resulting in lower ASER value. We confirmed that in order to obtain low ASER SRAM cells, it is necessary to also the buried nwell1 structure scheme and to fabricate the cell transistors with low threshold voltage and high on-current.

• Asian Pacific Journal of Cancer Prevention
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• v.15 no.22
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• pp.9973-9978
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• 2014

Background: Hypoxia inducible factor-1 alpha (HIF-$1{\alpha}$) is the key regulator of cellular responses to hypoxia and plays a central role in tumour growth. Presence of Single nucleotide polymorphisms (SNPs) in the critical regulatory domains of HIF-$1{\alpha}$ may result in the overexpression of the protein and subsequent changes in the expression of the downstream target genes. The aim of study was to investigate the association of three SNPs (g.C111A, g.C1772T and g.G1790A) of HIF-$1{\alpha}$ with the risk of breast cancer in North Indian sporadic breast cancer patients. Materials and Methods: A total of 400 subjects, including 200 healthy controls and 200 patients with breast cancer were recruited in this study. Genotypes were determined using polymerase chain reaction - restriction fragment length polymorphism (PCR-RFLP) method. Results: The CC and CA genotype frequency of HIF-$1{\alpha}$ g.C111A polymorphism was 100 vs 99% and 0 vs 1% in breast cancer patients and healthy controls respectively. The frequencies of CC, CT and TT genotype of g.C1772T polymorphism were 76 vs 74.5%, 19 vs 21% and 5 vs 4.5% in breast cancer patients and control individuals respectively. There was no significant difference in genotype and allele frequencies of HIF-$1{\alpha}$ g.C1772T polymorphism between cases and control individuals (p>0.05). For g.G1790A genotypes, all patients and controls had only GG genotype. Conclusions: The three HIF-$1{\alpha}$ polymorphisms (g.C111A, g.C1772T and g.G1790A) are not associated with breast cancer risk in North-West Indian patients.

• Journal of the Korean Mathematical Society
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• v.48 no.2
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• pp.341-365
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• 2011

In this paper, we establish general stratawise higher jet evaluation transversality of J-holomorphic curves for a generic choice of almost complex structures J (tame to a given symplectic manifold (M, $\omega$)). Using this transversality result, we prove that there exists a subset $\cal{J}^{ram}_{\omega}\;{\subset}\;\cal{J}_{\omega}$ of second category such that for every $J\;{\in}\;\cal{J}^{ram}_{\omega}$, the dimension of the moduli space of (somewhere injective) J-holomorphic curves with a given ramication prole goes down by 2n or 2(n - 1) depending on whether the ramication degree goes up by one or a new ramication point is created. We also derive that for each $J\;{\in}\;\cal{J}^{ram}_{\omega}$ there are only a finite number of ramication profiles of J-holomorphic curves in a given homology class $\beta\;{\in}\;H_2$(M; $\mathbb{Z}$) and provide an explicit upper bound on the number of ramication proles in terms of $c_1(\beta)$ and the genus g of the domain surface.

• Proceedings of the Korea Information Processing Society Conference
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• 2011.04a
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• pp.17-20
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• 2011

NAND 플래시 메모리 기반의 저장장치의 내부에는 Flash Translation Layer (FTL)이라는 소프트웨어가 사용되고 있다. FTL은 파일 시스템으로부터 요청되는 논리 주소를 플래시 메모리의 물리 주소로 변환하며 이를 위하여 사상 테이블을 사용한다. 일반적으로 사상 테이블의 빠른 접근을 위하여 사상 테이블은 저장장치 내부의 RAM에 유지한다. 최근 저장 공간의 용량이 커지게 되면서 사상 테이블로 인해 요구되는 RAM의 크기도 커지게 되어 사상 테이블을 플래시 메모리에 저장하고 일부만 RAM에 유지하는 캐싱 기법들이 연구되어 왔다. 본 논문에서는 SAT-c 라는 사상 테이블 캐싱 기법을 제안하고 캐시 교체 알고리즘들의 성능을 비교하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.400-403
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• 2016

The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).

• Journal of the Institute of Convergence Signal Processing
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• v.3 no.2
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• pp.83-88
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• 2002

In this paper, a POS interfacing and temperature compensable LPG dispensing control system(LDCS) has been developed. A LDCS includes a 16-bit 80C196 microprocessor, RAM, ROM, video driver, and programmable peripheral devices. Based on gas flow encoding pulse, temperature-voltage conversion values and apparatus calibration values, the LDCS controls the LPG dispensing quantity with switching on or off the solenoid valves. The temperature compensation is performed with a 10-bit A/D conversion and its range is from +7$0^{\circ}C$ to -3$0^{\circ}C$ with a 0.5$^{\circ}C$ resolution.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.102-107
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• 2007

This paper proposes a H.264/AVC entropy decoder without embedded processor nor memory fabrication process. Many researches on H.264/AVC entropy decoders require ROM or RAM fabrication process, which is difficult to be implemented in general digital logic fabrication process. Furthermore, many researches require embedded processors for bitstream manipulation, which increases area and power consumption. This papers proposes hardwired H.264/AVC entropy decoder without embedded processor, which improves data processing speed and reduces power consumption. Furthermore, its CAVLC decoder optimizes lookup table and internal buffer without embedded memory, which reduces hardware size and can be implemented in general digital logic fabrication process without ROM or RAM fabrication process. Designed entropy decoder was embedded in H.264/AVC video decoder, and it was verified to operate correctly in the system. Synthesized in TSMC 90nm fabrication process, its maximum operation frequency is 125MHz. It supports QCIF, CIF, and QVGA image format. Under slight modification of nC register and other blocks, it also support VGA image format.