• Title/Summary/Keyword: C-MEMS

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THe Novel Silicon MEMS Package for MMICS (초고추파 집적 회로를 위한 새로운 실리콘 MEMS 패키지)

  • Gwon, Yeong-Su;Lee, Hae-Yeong;Park, Jae-Yeong;Kim, Seong-A
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.6
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    • pp.271-277
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    • 2002
  • In this paper, a MEMS silicon package is newly designed, fabricated for HMIC, and characterized for microwave and millimeter-wave device applications. The proposed package is fabricated by using two high resistivity silicon substrates and surface/bulk micromachining technology. It has a good performance characteristic such as -20㏈ of $S_11$/ and -0.3㏈ of $S_21$ up to 20㎓, which is useful in microwave region. It has also better heat transfer characteristics than the commonly used ceramic package. Since the proposed silicon MEMS package is easy to fabricate and wafer level chip scale packaging is also possible, the production cost can be much lower than the ceramic package. Since it will be a promising low-cost package for mobile/wireless applications.

Direct Bonding of 3C-SiC Wafer for MEMS in Hash Environments (극한 환경 MEMS용 3C-SiC기판의 직접접합)

  • Chung, Yun-Sik;Lee, Jong-Chun;Chung, Gwiy-Sang
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.2020-2022
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    • 2002
  • SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS fileds because of its application possibility in harsh environements. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The PECVD oxide was characterized by XPS and AFM, respectively. The characteristics of bonded sample were measured under different bonding conditions of HF concentration and applied pressure, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/$cm^2{\sim}$ Max : 15.5 kgf/$cm^2$).

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Technical Overview of Optical MEMS in Information and Telecommunication (정보통신 광 MEMS 기술의 동향분석)

  • Pack, M.C.;Han, G.P.;Kim, Y.Y.;Sohn, Y.J.;Kim, T.Y.;Cho, K.I.
    • Electronics and Telecommunications Trends
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    • v.16 no.4 s.70
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    • pp.23-40
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    • 2001
  • 광 MEMS(Optical MEMS)는 미세 기계, 전자 및 광학기술이 조합하여 이루어지는 종합적인 기술분야로서 정보통신 핵심부품의 정밀화, 고성능화, 경량화 추세에 의해 그 중요성을 더해가고 있다. 본 논문은 정보통신 기술분야에 적용되고 있는 광 MEMS 기술에 대하여 살펴본 것으로, MEMS 시스템을 구성하고 있는 광학적 구성요소의 기술개발 현황, 신소재 및 새롭게 도출된 아이디어 등에 대하여 최신 연구동향을 중심으로 조사.분석하였다. 정보통신 기술의 발전에 따라 응용분야도 다양해지며 신소재의 출현에 따른 새로운 연구분야가 확대되는 등 광 MEMS 기술의 전반적인 기술추세에 대해 전망하였다.

Applications of MEMS Technology on Medicine & Biology (의료 및 생물학에 응용되는 MEMS기술)

  • Chang, J.K.;Chung, S.;Han, D.C.
    • Transactions of Materials Processing
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    • v.11 no.2
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    • pp.108-113
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    • 2002
  • The application fields of medicine and biology are spotlighted because of the increasing concentration of health and the abundance of life. MEMS is very good solution in this fields for the concept of point of care which makes systems more useful and spread wide. This paper shows the major fabrication schemes and application fields of microelectromechanical system specially in medicine and biology fields.

Wafer-Level MEMS Capping Process using Electrodeposition of Ni Cap and Debonding with SnBi Solder Layer (Ni 캡의 전기도금 및 SnBi 솔더 Debonding을 이용한 웨이퍼 레벨 MEMS Capping 공정)

  • Choi, J.Y.;Lee, J.H.;Moon, J.T.;Oh, T.S.
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.4
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    • pp.23-28
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    • 2009
  • We investigated the wafer-level MEMS capping process for which cavity formation in Si wafer was not required. Ni caps were formed by electrodeposition on 4" Si wafer and Ni rims of the Ni caps were bonded to the Cu rims of bottom Si wafer by using epoxy. Then, top Si wafer was debonded from the Ni cap structures by using SnBi layer of low melting temperature. As-evaporated SnBi layer was composed of double layers of Bi and Sn due to the large difference in vapor pressures of Bi and Sn. With keeping the as-evaporated SnBi layer at $150^{\circ}C$ for more than 15 sec, SnBi alloy composed of eutectic phase and Bi-rich $\beta$ phase was formed by interdiffusion of Sn and Bi. Debonding between top Si wafer and Ni cap structures was accomplished by melting of the SnBi layer at $150^{\circ}C$.

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A New LC Resonator Fabricated by MEMS Technique and its Application to Magnetic Sensor Device (MEMS 공정에 의한 LC-공진기형 자기센서의 제작과 응용)

  • Kim, Bong-Soo;Kim, Yong-Seok;Hwang, Myung-Joo;Lee, Hee-Bok
    • Journal of the Korean Magnetics Society
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    • v.17 no.3
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    • pp.141-146
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    • 2007
  • A new class of LC-resonator for micro magnetic sensor device was invented and fabricated by means of MEMS technique. The micro LC-resonator consists of a solenoidal micro-inductor with a bundle of soft magnetic microwire cores and a capacitor connected in parallel to the micro-inductor. The core magnetic material is a tiny glass coated $Co_{83.2}B_{3.3}Si_{5.9}Mn_{7.6}$ microwire fabricated by a glasscoated melt spinning technique. The core materials were annealed at various temperatures $150^{\circ}C,\;200^{\circ}C\;,250^{\circ}C\;,$ and $300^{\circ}C$ for 1 hour in a vacuum to improve soft magnetic properties. The solenoidal micro-inductors fabricated by MEMS technique were $500{\sim}1,000{\mu}m$ in length with $10{\sim}20$ turns. The changes of inductance as a function of external magnetic field in micro-inductors with properly annealed microwire cores were varied as much as 370%. Since the permeability of ultra soft magnetic microwire is changing rapidly as a function of external magnetic field. The inductance ratio as well as magnetoimpedance ratio (MIR) in a LC-resonator was varied drastically as a function of external magnetic field. The MIR curves can be tuned very precisely to obtain maximum sensitivity. A prototype magnetic sensor device consisting of the developed microinductors with a multivibrator circuit was test successfully.

Effect of Surface Treatments of Polycrystalline 3C-SiC Thin Films on Ohmic Contact for Extreme Environment MEMS Applications (극한 환경 MEMS용 옴익 접촉을 위한 다결정 3C-SiC 박막의 표면 처리 효과)

  • Chung, Gwiy-Sang;Ohn, Chang-Min
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.3
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    • pp.234-239
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    • 2007
  • This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.

Wafer Level Hermetic Sealing Characteristics of RF-MEMS Devices using Non-Conductive Epoxy (비전도성 에폭시를 사용한 RF-MEMS 소자의 웨이퍼 레벨 밀봉 실장 특성)

  • 박윤권;이덕중;박흥우;송인상;김정우;송기무;이윤희;김철주;주병권
    • Journal of the Microelectronics and Packaging Society
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    • v.8 no.4
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    • pp.11-15
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    • 2001
  • In this paper, hermetic sealing technology was studied for wafer level packaging of the RF-MEMS devices. With the flip-chip bonding method. this non-conductive B-stage epoxy sealing will be profit to the MEMS device sealing. It will be particularly profit to the RF-MEMS device sealing. B-stage epoxy can be cured by 2-step and hermetic sealing can be obtained. After defining 500 $\mu\textrm{m}$-width seal-lines on the glass cap substrate by screen printing, it was pre-baked at $90^{\circ}C$ for about 30 minutes. It was, then, aligned and bonded with device substrate followed by post-baked at $175^{\circ}C$ for about 30 minutes. By using this 2-step baking characteristic, the width and the height of the seal-line could be maintained during the sealing process. The height of the seal-line was controlled within $\pm$0.6 $\mu\textrm{m}$ in the 4 inches wafer and the bonding strength was measured to about 20MPa by pull test. The leak rate, that is sealing characteristic of the B-stage epoxy, was about $10^{-7}$ cc/sec from the leak test.

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Experimental Study on Performance of MEMS(Multi-Effect-Multi-Stage) Distiller for Solar Thermal Desalination (태양열 해수담수화를 위한 증발식 MEMS(Multi-Effect-Multi-Stage)담수기 성능 실험 연구)

  • Joo, Hong-Jin;Jeon, Yong-Han;Kwak, Hee-Youl
    • Journal of the Korean Solar Energy Society
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    • v.33 no.3
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    • pp.91-98
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    • 2013
  • In this study, we have carried out development and performance evaluation of optimized MEMS(Multi-Effect-Multi-Stage) fresh water generator with $7m^2/day$ for solar thermal desalination system. The developed MEMS was composed of high temperature part and low temperature part. This arrangement has the advantage of increasing the availability of solar thermal energy. The MEMS consists of 2 steam generators, 5 evaporators, and 1 condenser. Tubes of heat exchanger used for steam generators, evaporators and condenser were manufactured by corrugated tubes. The performance of the MEMS was tested through in-door experiments, using an electric heater as heat source. The experimental conditions for each parameters were $20^{\circ}C$ for sea water inlet temperature to condenser, $8.16m^2$ /hour sea water inlet volume flow rate, $70^{\circ}C$ for hot water inlet temperature to generator of high temperature part, 3.6 4.8, 6.0 $m^2/hour$ for hot water inlet volume flow rate. As a result, The developed MEMS was required about 85 kW heating source to produce $7m^2/day$ of fresh water. It was analyzed that the performance ratio of MEMS was about 2.6.

MEMS Pressure Sensor Technology and Industry Trends (MEMS 압력센서의 기술 및 산업동향)

  • Je, C.H.;Choi, C.A.;Lee, S.Q.;Yang, W.S.
    • Electronics and Telecommunications Trends
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    • v.30 no.6
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    • pp.21-30
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    • 2015
  • 압력센서란 두 물체 간의 상호 작용하는 힘의 크기를 나타내는 물리적 양을 측정하는 디바이스로서 힘의 전달 크기, 힘의 방향 등을 측정하는 데 매우 광범위하게 사용되고 있는 센서이다. 사용하는 분야는 의료, 자동차, 항공, 공업계측, 가전, 환경제어분야 등의 전반적 산업제품과 산업시설에 응용되고 있으며, 측정원리는 힘의 변화에 따른 재료의 변위, 변형, 진동수, 변화, 열전도율 변화 등을 이용하는 것으로 종전의 기계식 감지방법에서 현재는 센서장치의 소형화를 위하여 반도체소자 제작기술과 Micro Electro Mechanical System(MEMS)기술을 이용하는 초소형, 저전력형 센서개발로 계속 발전하고 있다. 본고에서 멤스(MEMS) 압력센서의 최근 제품 기술 개발과 시장 및 산업동향을 알아보고 향후 더욱더 확장될 압력센서제품 기술의 기초 정보를 제공하고자 한다.

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