• Title/Summary/Keyword: C-FLIP

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Temperature Measurement of Flip Chip Joints with Peripheral Array of Solder Bumps (페리퍼럴어레이 플립칩의 온도 분포 특성)

  • Cho Bon-Goo;Lee Taek-Yeong;Lee Jongwon;Kim Jun-Ki;Kim Gangbeom
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.3 s.36
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    • pp.243-251
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    • 2005
  • The distribution of temperature of flip chipped device with peripheral solder bump array was measured with variables, such as the locations and geometries of heater, the size of device, the size of passivation opening. The highest temperature was measured with the larger device, $3.0(mm)\times3.0(mm)$, which has the smallest heater at the center of device and the circular passivation opening. For 2 (watts) power input, the device shows the highest temperature of about $110(^{\circ}C)$. In contrast, the smaller device, $1.5(mm)\times1.8(mm)$, shows that of $90(^{\circ}C)$. In addition to the size effect, the increase of passivation opening size decreased the maximum temperature by about $10(^{\circ}C)$. From the measurement, the temperature of device could be controlled with the size and geometry of heater, the size of device and the size and geometry of passivation opening.

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A Study on the Optimization of Heat Dissipation in Flip-chip Package (플립칩 패키지의 열소산 최적화 연구)

  • Park, Chul Gyun;Lee, Tae Ho;Lee, Tae Kyoung;Jeong, Myung Yung
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.3
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    • pp.75-80
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    • 2013
  • According to advance of electronic packaging technology, electronic package becomes smaller. Miniaturization of package causes the temperature rise of package. This can degrade life of electronic device and generate the failure of electronic system. In this study, we proposed a new semi-embedded structure with micro pattern for maximizing heat dissipation. A proposed structure showed the characteristics which have maximum temperature lower than $20^{\circ}C$ compared with conventional structure. And also, in view of thermal stress and strain, our structure showed a remarkably low value compared with other ones. We expect that the new structure proposed in this work can be applied to an flip-chip package of the future.

BUMPLESS FLIP CHIP PACKAGE FOR COST/PERFORMANCE DRIVEN DEVICES

  • Lin, Charles W.C.;Chiang, Sam C.L.;Yang, T.K.Andrew
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2002.09a
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    • pp.219-225
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    • 2002
  • This paper presents a novel "bumpless flip chip package"for cost! performance driven devices. Using the conventional electroplating and etching processes, this package enables the production of fine pitch BGA up to 256 I/O with single layer routing. An array of circuitry down to $25-50{\mu}{\textrm}{m}$ line/space is fabricated to fan-in and fan-out of the bond pads without using bumps or substrate. Various types of joint methods can be applied to connect the fine trace and the bond pad directly. The resin-filled terminal provides excellent compliancy between package and the assembled board. More interestingly, the thin film routing is similar to wafer level packaging whereas the fan-out feature enables high lead count devices to be accommodated in the BGA format. Details of the design concepts and processing technology for this novel package are discussed. Trade offs to meet various cost or performance goals for selected applications are suggested. Finally, the importance of design integration early in the technology development cycle with die-level and system-level design teams is highlighted as critical to an optimal design for performance and cost.

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Interconnection Process and Electrical Properties of the Interconnection Joints for 3D Stack Package with $75{\mu}m$ Cu Via ($75{\mu}m$ Cu via가 형성된 3D 스택 패키지용 interconnection 공정 및 접합부의 전기적 특성)

  • Lee Kwang-Yong;Oh Teck-Su;Won Hye-Jin;Lee Jae-Ho;Oh Tae-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.2 s.35
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    • pp.111-119
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    • 2005
  • Stack specimen with three dimensional interconnection structure through Cu via of $75{\mu}m$ diameter, $90{\mu}m$ height and $150{\mu}m$ pitch was successfully fabricated using subsequent processes of via hole formation with Deep RIE (reactive ion etching), Cu via filling with pulse-reverse electroplating, Si thinning with CMP, photolithography, metal film sputtering, Cu/Sn bump formation, and flip chip bonding. Contact resistance of Cu/Sn bump and Cu via resistance could be determined ken the slope of the daisy chain resistance vs the number of bump joints of the flip chip specimen containing Cu via. When flip- chip bonded at $270^{\circ}C$ for 2 minutes, the contact resistance of the Cu/Sn bump joints of $100{\times}100{\mu}m$ size was 6.7m$\Omega$ and the Cu via resistance of $75{\mu}m$ diameter, $90{\mu}m$ height was 2.3m$\Omega$.

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Quercetin Potentiates TRAIL-induced Apoptosis in Human Colon KM12 Cells (사람 대장암 KMl2세포에서 quercetin 의한 TRAIL이 유도하는 세포사멸의 증가)

  • Park, Jun-Ik;Kim, Hak-Bong;Kim, Mi-Ju;Lee, Jae-Won;Bae, Jae-Ho;Park, Soo-Jung;Kim, Dong-Wan;Kang, Chi-Dug;Kim, Sun-Hee
    • Journal of Life Science
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    • v.19 no.9
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    • pp.1209-1217
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    • 2009
  • Many cancer cells are sensitive to the TNF-related apoptosis-inducing ligand (TRAIL)-induced apoptosis. However, some cancer cells show either partial or complete resistance to TRAIL. Human colon carcinoma KM12 cells have been shown to be insensitive to TRAIL-induced apoptosis. To overcome TRAIL resistance in KM12 cells, we targeted key anti-apoptotic molecules involved in the modulation of TRAIL resistance in the cells, and evaluated the effects of quercetin as a TRAIL sensitizer in the cells. We found that quercetin acted in synergy with TRAIL to enhance TRAIL-induced apoptosis in KM12 cells by the down-regulation of c-FLIP and DNA-PKcs/Akt and up-regulation of death receptors (DR4/DR5), which led to the enhancement of TRAIL-mediated activation of caspases and subsequent cleavage of PARP, as well as up-regulation of Bax. These findings suggest that the DNA-PKcs/Akt signaling pathway, as well as c-FLIP, play essential roles in regulating cells in the escape from TRAIL-induced apoptosis. Based on these results, this study provides a potential application of quercetin in combination with TRAIL in the treatment of human colon cancer.

Alternating Acquisition Technique for Quantification of in vitro Hyperpolarized [1-13C] Pyruvate Metabolism

  • Yang, Seungwook;Lee, Joonsung;Joe, Eunhae;Lee, Hansol;Song, Ho-Taek;Kim, Dong-Hyun
    • Investigative Magnetic Resonance Imaging
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    • v.20 no.1
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    • pp.53-60
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    • 2016
  • Purpose: To develop a technique for quantifying the $^{13}C$-metabolites by performing frequency-selective hyperpolarized $^{13}C$ magnetic resonance spectroscopy (MRS) in vitro which combines simple spectrally-selective excitation with spectrally interleaved acquisition. Methods: Numerical simulations were performed with varying noise level and $K_p$ values to compare the quantification accuracies of the proposed and the conventional methods. For in vitro experiments, a spectrally-selective excitation scheme was enabled by narrow-band radiofrequency (RF) excitation pulse implemented into a free-induction decay chemical shift imaging (FIDCSI) sequence. Experiments with LDH / NADH enzyme mixture were performed to validate the effectiveness of the proposed acquisition method. Also, a modified two-site exchange model was formulated for metabolism kinetics quantification with the proposed method. Results: From the simulation results, significant increase of the lactate peak signal to noise ratio (PSNR) was observed. Also, the quantified $K_p$ value from the dynamic curves were more accurate in the case of the proposed acquisition method compared to the conventional non-selective excitation scheme. In vitro experiment results were in good agreement with the simulation results, also displaying increased PSNR for lactate. Fitting results using the modified two-site exchange model also showed expected results in agreement with the simulations. Conclusion: A method for accurate quantification of hyperpolarized pyruvate and the downstream product focused on in vitro experiment was described. By using a narrow-band RF excitation pulse with alternating acquisition, different resonances were selectively excited with a different flip angle for increased PSNR while the hyperpolarized magnetization of the substrate can be minimally perturbed with a low flip angle. Baseline signals from neighboring resonances can be effectively suppressed to accurately quantify the metabolism kinetics.

Study on the Scap-cure Behavior of Adhesive for Flip-chip Bonding (플립칩 본딩용 접착제의 속경화 거동 연구)

  • Lee, Jun-Sik;Min, Kyung-Eun;Kim, Mok-Sun;Lee, Chang-Woo;Kim, Jun-Ki
    • Proceedings of the KWS Conference
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    • 2010.05a
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    • pp.78-78
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    • 2010
  • 모바일 정보통신기기를 중심으로 패키지의 초소형화, 고집적화를 위해 플립칩 공법의 적용이 증가되고 있고 있으며 접속피치의 미세화에 따라 솔더 및 언더필을 사용하는 C4 공법보다 ACA(Anisotropic Conductive Adhesive), NCA (Non-conductive Adhesive) 등의 접착제를 이용하는 칩본딩 공법에 대한 요구가 증가하고 있다. 특히, NCA 공법의 경우 산업 현장의 대량생산에 대응하기 위해서는 접착제의 속경화 특성이 요구되어 진다. 일반적으로 접착제의 경화거동은 DSC(Differential Scanning Calorimeter)를 사용해 확인하지만, 수초 이내에 경화되는 접착제의 경우는 적용되기 어렵다. 본 연구에서는 이러한 전자패키지용 접착제의 속경화 거동을 효과적으로 평가할 수 있는 방법을 조사 하였다. 실험에서 사용된 접착제는 에폭시계 레진 기반에 이미다졸계 경화제를 사용한 기본적인 포뮬레이션을 사용하였고, 경화시간은 160^{\circ}C에서 1분 이내에 경화되는 특성을 가지고 있다. 경화 거동을 확인하기 위해서 isothermal DSC와 DEA(Dielectric Analysis)의 두가지 방법을 사용해 비교하였다. 두 실험 방법 모두 $160^{\circ}C$를 유지하며 경화 거동을 확인하였고, DoC(Degree of Cure)의 측정오차를 비교 분석하였다. DEA는 이온 모빌리티 변화에 따른 유전손실율을 측정하는 방법으로 80~90% 이후의 경화도는 측정되지 않았지만, 수초 이내에 경화되는 속경화 특성을 평가하기에 적합한 것으로 확인되었다.

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Formation of Sn-Cu Solder Bump by Electroplating for Flip Chip (플립칩용 Sn-Cu 전해도금 솔더 범프의 형성 연구)

  • 정석원;강경인;정재필;주운홍
    • Journal of the Microelectronics and Packaging Society
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    • v.10 no.4
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    • pp.39-46
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    • 2003
  • Sn-Cu eutectic solder bump was fabricated by electroplating for flip chip and its characteristics were studied. A Si-wafer was used as a substrate and the UBM(Under Bump Metallization) of Al(400 nm)/Cu(300 nm)/Ni(400 nm)/Au(20 nm) was coated sequentially from the substrate to the top by an electron beam evaporator. The experimental results showed that the plating ratio of the Sn-Cu increased from 0.25 to 2.7 $\mu\textrm{m}$/min with the current density of 1 to 8 A/d$\m^2$. In this range of current density the plated Sn-Cu maintains its composition nearly constant level as Sn-0.9∼1.4 wt%/Cu. The solder bump of typical mushroom shape with its stem diameter of 120 $\mu\textrm{m}$ was formed through plating at 5 A/d$\m^2$ for 2 hrs. The mushroom bump changed its shape to the spherical type of 140 $\mu\textrm{m}$ diameter by air reflow at $260^{\circ}C$. The homogeneity of chemical composition for the solder bump was examined, and Sn content in the mushroom bump appears to be uneven. However, the Sn distributed more uniformly through an air reflow.

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