• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.5
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• pp.686-693
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• 2001

In this paper, a new carrier complex power series which represents nonlinear transfer function of high power amplifier is derived. Using this transfer function, the nonlinear transfer function of predistortive circuit for linearizing the distortion effect of a HPA(High Power Amplifier) is derived and fabricated. A measured gain and $P_{1dB}$ of the fabricated HPA in IMT-2000 basestation transmitting band are 34.06 dB and 35.4 dBm. The predistortive circuit using inverse carrier complex power series is fabricated and operated with HPA. The predistortive HPA improves C/I(Carrier to Intermodulation) ratio of HPA by 17.01 dB(@Pout=25.43 dBm/tone) with 2-tone at 2.1375 GHz and 2.1425 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.6A
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• pp.677-682
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• 2004

In this paper, A novel spatial power combiner with wideband printed dipole antennas and balanced amplifier is proposed. The wideband spatial power combiner is proposed to improve power capability and bandwidth by using balanced amplifier and wideband printed dipole antenna, respectively, The proposed 4${\times}$1 spatial power combiner with those components has the characteristics that the 3-dB bandwidth is 1.02 GHz (17 ％), and the effective isotropic power gain (EIPG) is 24.04 dB at 6 GHz. Also, power combining efficiency is 68.69％.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.8 s.99
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• pp.825-834
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• 2005

In this paper, a new signal canceller that input signals are equally group-delayed and cancelled each other is proposed and feedforward linearizing power amplifier that adopt the proposed signal cancellers is fabricated. Although the conventional signal canceller can't matches the phase and the group delay time of input signals simultaneously, the proposed signal canceller matches those simultaneously. Simultaneous matching of the phase and the group delay time can makes wideband signal cancellation. The main signal cancellation loop of the fabricated feedforward amplifier with the proposed signal cancellers cancel input signal more than 26.3 dB and the intermodulation distortion signal cancellation loop cancel more than 15.2 dB for 200 MHz bandwidth. And the proposed feedforward power amplifier improves C/I ratio by 20.8 dB with two tones at 2,115 MHz, 2,165 MHz, respectively.

• Journal of IKEEE
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• v.28 no.1
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• pp.33-37
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• 2024

In this paper, we report the design and the measurement of a X-band low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) using a 0.25 ㎛ gate length microstrip GaN-on-SiC high electron mobility transistor (HEMT) technology. The developed X-band GaN-based LNA MMIC achieves small signal gain of 22.75 dB ~ 25.14 dB and noise figure of 1.84 dB ~ 1.94 dB in the desired band of 9 GHz to 10 GHz. Input and output return loss values are -11.36 dB ~ -24.49 dB and -11.11 dB ~ -17.68 dB, respectively. The LNA MMIC can withstand 40 dBm (10 W) input power without performance degradation. The chip dimensions are 3.67 mm × 1.15 mm. The developed GaN-based LNA MMIC is applicable to various X-band applications.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.47 no.5
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• pp.388-396
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• 2019

This paper describes the RF(Radio Frequency) interference on the GNSS receiver due to the S-band signals transmitted from the transmitters in the Test Launch Vehicle, and analyzes the cause of the RF interference. Due to the S-band signals that have relatively high power levels compared with GNSS signals, an LNA(Low Noise Amplifier) in the active GNSS antenna was saturated, and the intermodulation signal within GNSS in-bands was produced in the LNA whenever two S-band signals were received from the GNSS antenna. For these reasons, the C/N0 of the satellite signals in the GNSS receiver was attenuated severely. The design of the LNA was changed in order to protect the RF interference due to the S-band signals and the suppression capability of the RF interference was confirmed in the new LNA through the comparison of the old LNA.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.4
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• pp.421-427
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• 2004

A low cost solution employing harmonic oscillation to the frequency synthesizer at 5.8 ㎓ is proposed. The proposed frequency synthesizer is composed of 2.9 ㎓ PLL chip, 2.9 ㎓ oscillator, and 5.8 ㎓ buffer amplifier The measured data shows a frequency Outing range of 290 ㎒, ranging from 5.65 to 5.94 ㎓ about 0.5 ㏈m of output power, and a phase noise of -107.67 ㏈c/㎐ at the 100 ㎑ offset frequency. All spurious signals including fundamental oscillation power(2.9 ㎓) are suppressed at least 15 ㏈c than the desired second harmonic signal.

• Journal of electromagnetic engineering and science
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• v.2 no.1
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• pp.22-27
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• 2002

This paper describes a SiGe HBT low noise amplifier (LNA) design for IMT-2000 mobile applications. This LNA is optimized for linearity in consideration of the out-of-band-termination capacitance. This LNA yields a noise figure of 1.2 dB, 16 dB gain, an input return loss of 11 dB, and an output return loss of 14.3 dB over the desired frequency range (2.11-2.17 GHz). When the RF input power is -2i dBm, the input third order intercept point (IIP3) of 8.415 dBm and the output third order intercept point (OIP3) of 24.415 dBm are achieved.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.5C
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• pp.496-499
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• 2002

In this paper, a phase shifter with shifting photonic bandgap(PBG) cell in linear feedforward amplifier is designed and fabricated in 5GHz wireless LAN band. Now a day, the phase shifter has been fabricated with hybrid type. In this paper, a portion of PBG cell is shifted for the tuning phase. The phase shift was achieved maximum 80o in our PBG structure. Shifting PBG cell has been applied in feedforward main loop to cancel the main two tone signal.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.4
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• pp.352-361
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• 2010

In this paper, a compact 20 W block-up-converter for C-band satellite communication is designed and implemented. The designed block up-converter consists of an intermediate frequency circuit, a mixer and local oscillator, a driver amplifier, a solid-state power amplifier, waveguide circuits, and a power supply module. To reduce the size of the block-up-converter, all circuits are assembled within an housing, so its dimension is just $21{\times}14{\times}11cm^3$. Especially, the waveguide filter and microstirp-to-waveguide transition are easily implemented using an housing. Also, to meet spurious and harmonics specification, various compact microstrip filters including an elliptic filter are integrated. Measurement results show that the developed block up-converter has good electrical performances: the output power of 43.7 dBm, the minimum gain of 65 dB, the gain flatness of ${\pm}1.84$, the IMD3 of -35 dBc, and the harmonic level of -105 dBc.

• ETRI Journal
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• v.42 no.6
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• pp.943-950
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• 2020

We propose 8.2-GHz band radar RFICs for an 8 × 8 phased-array frequency-modulated continuous-wave receiver developed using 65-nm CMOS technology. This receiver panel is constructed using a multichip solution comprising fabricated 2 × 2 low-noise amplifier phase-shifter (LNA-PS) chips and a 4ch RX front-end chip. The LNA-PS chip has a novel phase-shifter circuit for low-voltage operation, novel active single-to-differential/differential-to-single circuits, and a current-mode combiner to utilize a small area. The LNA-PS chip shows a power gain range of 5 dB to 20 dB per channel with gain control and a single-channel NF of 6.4 dB at maximum gain. The measured result of the chip shows 6-bit phase states with a 0.35° RMS phase error. The input P1 dB of the chip is approximately -27.5 dBm at high gain and is enough to cover the highest input power from the TX-to-RX leakage in the radar system. The gain range of the 4ch RX front-end chip is 9 dB to 30 dB per channel. The LNA-PS chip consumes 82 mA, and the 4ch RX front-end chip consumes 97 mA from a 1.2 V supply voltage. The chip sizes of the 2 × 2 LNA-PS and the 4ch RX front end are 2.39 mm × 1.3 mm and 2.42 mm × 1.62 mm, respectively.