[KSCI] Korea Science Citation Index Service

The Design of SiGe HBT LNA for IMT-2000 Mobile Application

Lee, Jei-Young (RFIC Center, Mission Technology Research Center, Kwangwoon University)
Lee, Geun-Ho (RFIC Center, Mission Technology Research Center, Kwangwoon University)
Niu, Guofu (Alabama Microelectronics Science and Technology Center, Auburn University, Al 36849, USA)
Cressler, John D. (Alabama Microelectronics Science and Technology Center, Auburn University, Al 36849, USA)
Kim, J.H. (RFIC Center, Mission Technology Research Center, Kwangwoon University)
Lee, J.C. (RFIC Center, Mission Technology Research Center, Kwangwoon University)
Lee, B. (RFIC Center, Mission Technology Research Center, Kwangwoon University)
Kim, N.Y. (RFIC Center, Mission Technology Research Center, Kwangwoon University)

Publication Information

Journal of electromagnetic engineering and science / v.2, no.1, 2002 , pp. 22-27 More about this Journal

Abstract

This paper describes a SiGe HBT low noise amplifier (LNA) design for IMT-2000 mobile applications. This LNA is optimized for linearity in consideration of the out-of-band-termination capacitance. This LNA yields a noise figure of 1.2 dB, 16 dB gain, an input return loss of 11 dB, and an output return loss of 14.3 dB over the desired frequency range (2.11-2.17 GHz). When the RF input power is -2i dBm, the input third order intercept point (IIP3) of 8.415 dBm and the output third order intercept point (OIP3) of 24.415 dBm are achieved.

Keywords

SiGe HBT; low noise amplifier; out-of-band-termination technique.;

Citations & Related Records

Reference

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