• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.3
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• pp.261-264
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• 2005

The 90 nm gate pattern technology have been virtualized by employing the hard mask and the planarization of fate poly silicon. We fabricated 70nm poly-Si on $200 nm-SiO_2/p-Si(100)$ substrates using low pressure chemical vapor deposition (LPCVD) to investigate roughness evolution by varying rapid annealing temperatures. The samples were annealed at the temperatures of $700^{\circ}C\~1100^{\circ}C$ for 40 seconds with a rapid thermal annealer. The surface image and the surface roughness were measured by a field emission scanning electron microscopy (FESEM) and an atomic force microscopy (AFM), respectively. The poly silicon surface became more rough as temperature increased due to surface agglomeration. The optimum conditions of poly silicon planarization were achieved by annealed at $700^{\circ}C$ for 40 seconds.

• Journal of Korean Ophthalmic Optics Society
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• v.15 no.3
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• pp.207-212
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• 2010

Purpose: Rigid gas permeable (RGP) contact lenses, based on fluorosilicone acrylate, were treated with plasma in air. Methods: The chemical compositions were analyzed by using X-ray photoelectron spectroscopy (XPS), the surface morphology and roughness of RGP contact lenses were observed by using atomic force microscopy (AFM), and the wettability changes were estimated by wetting angle measurement. Results: As the contact lenses were treated by the plasma, the F contents decreased significantly, and the O and Si contents increased on the surface. The number of oxygen-containing hydrophilic radicals (C-O and Si-O) increased greatly, the hydrophobic surface decreased, and the wetting angle increased. But the C-O bonds created with exchange of the fluorine did not increase a wettability. The surface compositions were not remarkably changed for the 6 months after plasma treatment, but the wetting angle increased again. Conclusions: It was considered that the improved wettability of the RGP contact lenses of high fluorine content after plasma treatment was affected by the activation of surface, the increase of Si-O, and the decrease of hydrophobic surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.83-83
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• 2008

Metal-oxide-silicon-on-insulator (MOSOI) structures were fabricated to study the effect caused by reactive ion etching (RIE) and sacrificial oxidation process on silicon-on-insulator (SOI) layer. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measured C-V curves were compared to the numerical results from 2-dimensional (2-D) simulations. The measurements revealed that the profile of C-V curves significantly changes depending on the SOI surface condition of the MOSOI capacitors. The shift in the measured C-V curves, due to the difference of the fixed oxide charge ($Q_f$), together with the numerical simulation analysis and atomic force microscopy (AFM) analysis, allowed extracting the fixed oxide charges ($Q_f$) in the structures as well as 2-D carrier distribution profiles.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.8-12
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• 2005

Indium tin oxide(ITO) surface treated by Oxygen plasma has been in situ analyzed using XPS(X-ray Photoelectron Spectroscopy) and EDS(Energy Dispersive Spectroscopy), to investigate the relations between the properties of the ITO surface and the properties of OLED(Organic Light Emitting Diode). We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by AFM(Atomic Force Microscope). We fabricated OLED using substrate that was treated optimum ITO surface. The plasma treatment of the ITO surface lowered the operating voltage of the OLED. We have obtained an improvement of luminance and decrease of turn-on voltage.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.8
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• pp.371-375
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• 2001

We attempted to fabricate polyurethane derivatives (PU-CN, PU-DCM) LB films by using LB method. Also, we investigated the monolayer behavior at the air-water interface by surface pressure-area (${\pi}$-A) isotherms. The surface morphologies and the physicochemical properties of LB films were investigated by atomic force microscopy(AFM) and UV-vis spectroscopy, respectively. And, the electrical properties of polyurethane derivatives LB films were investigated by using the conductivity and the dielectric constant. In the surface morphologies, physicochemical and electrical properties of polyurethane derivatives LB films, the properties is different as to the polyurethane derivatives, it is considered that this phenomena could be described by the difference of lumophore pendant which was adhered at PU main chain.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.1-4
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• 2007

This paper discusses two approaches for pre-polishing optimization of oxide chemical mechanical planarization (CMP) that can be used as alternatives to the commonly applied dummy structure insertion in shallow trench isolation (STI) and replacement gate (RG) technologies: reverse nitride masking (RNM) and oxide etchback (OEB). Wafers have been produced using each optimization technique and CMP tests have been performed. Dishing, erosion and global planarity have been investigated with the help of conductive atomic force microscopy (C-AFM). The results demonstrate the effectiveness of both techniques which yield excellent planarity without dummy structure related performance degradation due to capacitive coupling.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.864-868
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• 2007

Effect of high-temperature annealing on morphology of fully coherent self-assembled InAs quantum dots' grown on Si (100) substrates at $450^{\circ}C$ by atmospheric pressure metalorganic chemical vapor deposition(APMOCVD) was investigated by atomic force microscopy(AFM). When the dots were annealed at 500 - 600$^{\circ}C$ for 15 sec - 60 min, there was no appreciable change in the dot density but the heights of the dots increased along with the reduction in the diameters. In segregation from the InAs quantum dots and/or from the 2-dimensional InAs wetting layer which was not transformed into quantum dots looked responsible for this change in the dot size. However the change rates remained almost same regardless of annealing time and temperature, which may indicate that the morphological change due to thermal annealing is done instantly when the dots are exposed to high temperature annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.291-291
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• 2010

The SBN ceramic thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at substrate temperature of 300[$^{\circ}C$]. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The crystallinity of SBN thin films were increased with increase of annealing temperature in the temperature range of 600~800[$^{\circ}C$]. the surface rougness showed about 20 [nm].

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.156-156
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• 2010

최근 휴대용전자기기의 급격한 수요증가로 인하여 고성능 저전력 비휘발성메모리에 대한 관심이 크게 증가되고 있다. 다양한 비휘발성 메모리중에 상변화메모리는 고집적성과 저전력등의 장점을 가져 현재 가장 유망한 차세대 비휘발성 메모리로 각광받고 있고 일부 상용화가 진행되고 있다. 현재 상변화 메모리의 주된 연구 방향은 sub-40nm 크기에서 물리적, 전기적, 열적 scaling down에 대한 내용이며 주로 새로운 상변화 물질을 개발하여 이러한 문제점을 극복하려고 연구가 진행되고 있다. 하지만 이러한 상변화 물질의 나노급 특성은 물리적, 전기적, 열적 특성이 복합적으로 나타나고 나노급 소자 제작이 어렵기때문에 많은 연구가 진행되지 못했다. 본 연구에서는 나노임프린트 리소그래피 기술과 c-AFM 기술을 통하여 다양한 나노급 상변화 물질의 물리적, 전기적, 열적 특성에 대해 연구를 진행하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.315-315
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• 2011

The ring formation and electronic properties of furan adsorbed on graphene layers grown on 6H-SiC(0001) has been investigated using atomic force microscopy (AFM), near edge X-ray absorption fine structure (NEXAFS) spectra for the C K-edge, and high resolution photoemission spectroscopy (HRPES). Moreover, we observed that furan molecules adsorbed on graphene could be used for chemical functionalization via the lone pair of electrons on the oxygen group, allowing chemical doping. We also found that furan spontaneously formed rings with one of three different bonding configurations and the electronic properties of the ring formed by furan on graphene can be described using by AFM, NEXAFS and HRPES, respectively.