• Title/Summary/Keyword: C-AFM

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Crystal Growth of 3C-SiC Using HMDS Gas Source (HMDS 가스원을 이용한 3C-SiC의 결정성장)

  • Sun, Ju-Hun;Chung, Yun-Sik;Chung, Gwiy-Sang;Nishino, Shigehiro
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.735-738
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    • 2002
  • Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

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Physical Characteristics of 3C-SiC Thin-films Grown on Si(100) Wafer (Si(100) 기판 위에 성장돈 3C-SiC 박막의 물리적 특성)

  • ;;Shigehiro Nishino
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.11
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    • pp.953-957
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    • 2002
  • Single crystal 3C-SiC (cubic silicon carbide) thin-films were deposited on Si(100) wafer up to the thickness of 4.3 ${\mu}{\textrm}{m}$ by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane; {CH$_{3}$$_{6}$ Si$_{2}$) at 135$0^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC film was 4.3 ${\mu}{\textrm}{m}$/hr. The 3C-SiC epitaxial film grown on Si(100) wafer was characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), RHEED (reflection high energy electron diffraction), XPS (X-ray photoelecron spectroscopy), and Raman scattering, respectively. Two distinct phonon modes of TO (transverse optical) near 796 $cm^{-1}$ / and LO (longitudinal optical) near 974$\pm$1 $cm^{-1}$ / of 3C-SiC were observed by Raman scattering measurement. The heteroepitaxially grown film was identified as the single crystal 3C-SiC phase by XRD spectra (2$\theta$=41.5。).).

Crystal Characteristics of 3C-SiC Thin-films Grown on 2 inch Si(100) wafer (2 inch Si(100)기판위에 성장된 3C-SiC 박막의 결정특성)

  • Chung, Su-Young;Chung, Yun-Sik;Ryu, Ji-Goo;Chung, Gwiy-Sang;Shigehiro, Nishino
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.452-455
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    • 2002
  • Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

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Crystal Characteristics of 3C-SiC Grown on Si(100) Wafers (Si(100)기판상에 성장된 3C-SiC의 결정 특성)

  • Chung, Yun-Sik;Ryu, Ji-Goo;Seon, Joo-Heon;Chung, Soo-Yong;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05a
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    • pp.30-34
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    • 2002
  • Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyldisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m$/hr. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

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Effect of 3C-SiC buffer layer on the characteristics of AlN films supttered on Si Substrates (3C-SiC 버퍼층이 Si 기판위에 스퍼터링된 AlN 막의 특성에 미치는 영향)

  • Ryu, Kyeong-Il;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.3-6
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    • 2009
  • Aluminum nitride (AIN) thin films were deposited on a polycrystalline 3C-SiC intermediate layer by a pulsed reactive magnetron sputtering system. Characteristics of the AIN/SiC heterostructures were investigated by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The columnar structure of AIN thin films was observed by FE-SEM. The surface roughness of AlN films on the 3C-SiC buffer layer was measured using AFM. The XRD pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum (FWHM) of the rocking curve near (002) reflections was $1.3^{\circ}$. The infrared absorbance spectrum indicated that the residual stress of AIN thin films grown on SiC buffer layers was nearly negligible. The 3C-SiC intermediate layers are promising for the realization of nitride based electronic and mechanical devices.

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Thermal and Surface Properties of PET/Nylon66/Clay Nanocomposites (PET/Nylon66/Clay 나노복합재료의 열적물성 및 표면특성)

  • Lee, Minho;Ku, Jahun;Min, Byung Hun;Kim, Jeong Ho
    • Applied Chemistry for Engineering
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    • v.22 no.5
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    • pp.490-494
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    • 2011
  • Nanocomposites of blends of polyethyleneterephthalate (PET) and polyamide66 (Nylon66) containing natural and organically modified montmorillonite clays (PM, $Cloisite^{(R)}$ 25A and 15A) were prepared by melt mixing. DSC results showed that the addition of clay changed the crystallization behavior of PET/Nylon66 nanocomposites. Clay C25A was observed to most significantly change the crystallization temperature than other clays in blends of PET and Nylon66, which may be caused by the difference in interaction with matrix polymers. AFM results also showed that the lowest value of surface roughness was observed for nanocomposites containing C25A indicating the smooth and relatively homogenous surface. Mechanical properties measurement showed the similar results. Contact angle was measured to study the difference in hydrophobicity. An increase in contact angle was observed for nanocomposites with C25A or C15A due to the increased hydrophobicity.

Effects of pH and the Existence of CO2 Gas on the Silica Surface Characteristics at Silica/Pb(II) Solution Interface (CO2 가스의 존재 여부와 용액의 pH가 Silica/Pb(II) 용액 계면에서 Silica 표면의 특성에 미치는 영향)

  • Lee, Sang-Eun
    • Korean Journal of Soil Science and Fertilizer
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    • v.36 no.5
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    • pp.263-271
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    • 2003
  • Effects of the existence of $CO_2$ gas and pH on the silica surface characteristics at silica/Pb(II) and sodium dodecyl sulfonate (SDS, $C_{12}H_{25}SO_3Na$) solution interface were studied. The hydrophobic characteristics of silica surface was delineated by contact angle measurement and surface force measurement using atomic force microscopy (AFM). In $CO_2$ free condition provided by purging $N_2$ gas, the contact angle of fused silica surface in $10^{-4}M$ Pb(II) and SDS solution increased greatly up to $90^{\circ}$ compared with $40^{\circ}$ in atmospheric condition. It was due to the precipitation of $PbCO_3$ in atmospheric condition. In $CO_2$ free condition the change of contact angle and adhesion force ($F_{ad}$) in AFM, affected by pH change, was similar to the distribution of $PbOH^+$ ion in speciation diagram corresponding to $10^{-4}M$ total Pb(II). Therefore, it was convinced that the $PbOH^+$ ion among Pb(II) species would be the main adsorbing type on silica surface. Both of contact angle measurement and surface force measurement using AFM showed that the Pb only treatment made the silica surface hydrophobic. However, it could not be explained theoretically by current knowledge, and required further study in atomic level to solve the problem.

Nitrogen Incorporation of Nanostructured Amorphous Carbon Thin Films by Aerosol-Assisted Chemical Vapor Deposition

  • Fadzilah, A.N.;Dayana, K.;Rusop, M.
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.4
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    • pp.165-171
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    • 2013
  • Nanostructured pure a-C and nitrogen doped a-C: N thin films with small particle size of, ~50 nm were obtained by Aerosol-assisted CVD method from the natural precursor camphor oil. Five samples were prepared for the a-C and a-C: N respectively, with the deposition temperatures ranging from $400^{\circ}C$ to $600^{\circ}C$. At high temperature, the AFM clarifies an even smoother image, due to the increase of the energetic carbon ion bombardment at the surface of the thin film. An ohmic contact was acquired from the current-voltage solar simulator characterization. The higher conductivity of a-C: N, of ${\sim}{\times}10^{-2}Scm^{-1}$ is due to the decrease in defects since the spin density gap decrease with the nitrogen addition. Pure a-C exhibit absorption coefficient, ${\alpha}$ of $10^4cm^{-1}$, whereas for a-C:N, ${\alpha}$ is of $10^5cm^{-1}$. The high ${\sigma}$ value of a-C:N is due to the presence of more graphitic component ($sp^2$ carbon bonding) in the carbon films.

A Study on Pre-bonding of 3C-SiC Wafers using CVD Oxide (CVD 절연막을 이용한 3C-SiC 기판의 초기직접접합에 관한 연구)

  • ;;Shigehiro Nishino
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.10
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    • pp.883-888
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    • 2002
  • SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.

Direct Bonding Characteristics of 2 inch 3C-SiC Wafers for MEMS in Hash Environments (극한환경 MEMS용 2 inch 3C-SiC 기판의 직접접합 특성)

  • Chung, Yun-Sik;Ryu, Ji-Goo;Kim, Kyu-Hyun;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.387-390
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    • 2002
  • SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

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