• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.735-738
• /
• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

• 한국전기전자재료학회논문지
• /
• 제15권11호
• /
• pp.953-957
• /
• 2002

Single crystal 3C-SiC (cubic silicon carbide) thin-films were deposited on Si(100) wafer up to the thickness of 4.3 ${\mu}{\textrm}{m}$ by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane; ｛CH$_{3}$｝$_{6}$ Si$_{2}$) at 135$0^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC film was 4.3 ${\mu}{\textrm}{m}$/hr. The 3C-SiC epitaxial film grown on Si(100) wafer was characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), RHEED (reflection high energy electron diffraction), XPS (X-ray photoelecron spectroscopy), and Raman scattering, respectively. Two distinct phonon modes of TO (transverse optical) near 796 $cm^{-1}$ / and LO (longitudinal optical) near 974$\pm$1 $cm^{-1}$ / of 3C-SiC were observed by Raman scattering measurement. The heteroepitaxially grown film was identified as the single crystal 3C-SiC phase by XRD spectra (2$\theta$=41.5。).).

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
• /
• pp.452-455
• /
• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
• /
• pp.30-34
• /
• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyldisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m$/hr. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
• /
• pp.3-6
• /
• 2009

Aluminum nitride (AIN) thin films were deposited on a polycrystalline 3C-SiC intermediate layer by a pulsed reactive magnetron sputtering system. Characteristics of the AIN/SiC heterostructures were investigated by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The columnar structure of AIN thin films was observed by FE-SEM. The surface roughness of AlN films on the 3C-SiC buffer layer was measured using AFM. The XRD pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum (FWHM) of the rocking curve near (002) reflections was $1.3^{\circ}$. The infrared absorbance spectrum indicated that the residual stress of AIN thin films grown on SiC buffer layers was nearly negligible. The 3C-SiC intermediate layers are promising for the realization of nitride based electronic and mechanical devices.

• 공업화학
• /
• 제22권5호
• /
• pp.490-494
• /
• 2011

본 연구에서는 PET와 Nylon66의 블렌드에 몬모릴로나이트(PM) 또는 유기화제로 개질된 clay (Cloisite 25A 또는 15A)를 첨가하여 PET/Nylon66/clay 나노복합재료를 제조하였다. 나노복합재료는 용융삽입법을 이용하여 제조하였고 DSC 측정을 이용하여 분석한 결과 clay의 첨가로 인해 PET/Nylon66 블렌드의 결정화특성이 변화되는 것을 확인하였다. 특히 C25A가 PET/Nylon66 블렌드와의 상호작용이 가장 커서 결정화온도를 가장 크게 변화시키는 것으로 나타났다. 나노복합재료의 표면을 AFM으로 관찰한 결과에서도 C25A를 이용한 나노복합재료가 가장 표면의 굴곡이 적어서 상대적으로 표면이 균일한 것으로 나타났고 기계적 물성측정에서도 전반적으로 C25A를 이용한 나노복합재료가 우수한 물성을 나타내는 것으로 관찰되었다. 각 나노복합재료의 표면 극성도를 조사하기 위하여 접촉각 측정을 하였는데 유기화 정도가 클수록 표면의 접촉각이 커져서 극성이 낮아지는 것을 확인하였다.

• 한국토양비료학회지
• /
• 제36권5호
• /
• pp.263-271
• /
• 2003

$CO_2$ 가스 존재여부와 pH가 Pb(II)와 sodium dodecyl sulfonate(SDS, $C_{12}H_{25}SO_3Na$) 흡착에 따른 silca 표면의 특성 변화에 미치는 영향을 contact angle 과 AFM을 이용한 힘 측정을 통하여 살펴보았다. 대기와 접촉하여 $CO_2$가 용해되는 조건에서 Pb와 SDS가 $10^{-4}M$ 씩 들어 있는 혼합용액을 처리하였을 때, fused silica 표면의 contact angle은 $PbCO_3$의 침전 때문에 최대 $46^{\circ}$로 낮았다. 반면에 $N_2$ 개스를 불어넣는 $CO_2$ 부재조건에서는 $PbCO_3$의 침전이 없었기 때문에 contact angle이 최대 $90^{\circ}$로 크게 증가되었다. $CO_2$ 부재조건에서 pH에 따른 contact angle과 AFM에서 측정한 점착력($F_{ad}$) 변화 양상은 $PbOH^+$ 화학종 분포와 유사하였으므로, Pb(II)의 silica 표면 흡착형태는 $PbOH^+$ 로 판단되었다. 한편 contact angle 과 AFM 측정결과 모두 Pb 단독처리에서 소수성을 발현하였다. 이 결과는 현재까지의 알려진 이론으로 설명할 수 없었으며 이를 위하여 원자수준에서의 심도 깊은 연구가 필요하다고 판단되었다.

• Transactions on Electrical and Electronic Materials
• /
• 제14권4호
• /
• pp.165-171
• /
• 2013

Nanostructured pure a-C and nitrogen doped a-C: N thin films with small particle size of, ~50 nm were obtained by Aerosol-assisted CVD method from the natural precursor camphor oil. Five samples were prepared for the a-C and a-C: N respectively, with the deposition temperatures ranging from $400^{\circ}C$ to $600^{\circ}C$. At high temperature, the AFM clarifies an even smoother image, due to the increase of the energetic carbon ion bombardment at the surface of the thin film. An ohmic contact was acquired from the current-voltage solar simulator characterization. The higher conductivity of a-C: N, of ${\sim}{\times}10^{-2}Scm^{-1}$ is due to the decrease in defects since the spin density gap decrease with the nitrogen addition. Pure a-C exhibit absorption coefficient, ${\alpha}$ of $10^4cm^{-1}$, whereas for a-C:N, ${\alpha}$ is of $10^5cm^{-1}$. The high ${\sigma}$ value of a-C:N is due to the presence of more graphitic component ($sp^2$ carbon bonding) in the carbon films.

• 한국전기전자재료학회논문지
• /
• 제15권10호
• /
• pp.883-888
• /
• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
• /
• pp.387-390
• /
• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$