• Carbon letters
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• v.2 no.2
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• pp.99-104
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• 2001

Partial mesophase (PM) pitch precursor was prepared from fluidized catalytic cracking-decant oils (FCC-DO) by chemical reaction in the presence of $Br_2$. The PM pitch heated-treatment at $420^{\circ}C$ for 9 h exhibited the softening point of $297^{\circ}C$ with 23% yield, and 55% anisotropic content. The PM pitch precursor was melt-spun through circular nozzle by pressurized $N_2$, stabilized at $310^{\circ}C$, carbonized at $700^{\circ}C$, $1000^{\circ}C$, and $1200^{\circ}C$. The enough stabilization introduced 16.4% of the oxygen approximately. The stacking height ($L_{c002}$) and interlayer spacing ($d_{002}$) of the as-spun fibers were 4.58 nm and $3.45{\AA}$ and the value became minimum and maximum at $700^{\circ}C$ respectively in the carbonization procedure. The tensile strength increased with an increase in the heat treatment temperature exhibiting highest value of 750 MPa at $1200^{\circ}C$ carbonization.

• Korean Journal of Microbiology
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• v.35 no.3
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• pp.205-210
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• 1999

16brio cholerne is an important pathogenic organism that causes dimhea in human beings. V ciaoleroe KNIH002 was isolated from patients suffering with dian.heal disease in Korea. From Southern hybridization using the amplified PCR product of 307 bp as a probe. which was obtained from PCR reaction using primer detecting cholera toxin gene, we have found that the c b gene located in 4.5-kb fragmenl double digested with Pstl and BgllI of the chromosome. Therefore, we made mini-libraries of the isolate using PstI and Bgm restriction endonuclease and pBluescript SKU(+) vector. As a result. we cloned 4.5-kb PstI-BglII fragment containing the c a gene encoding a cholera toxin from the constructed mini-libraries of V olzolerae KNlH002 by colony hybridization using the same probes. This recombinant plasmid was named pCTX75. E. coii XL1- Blue harboring pCTX75 showed the cytotoxicity on Chinese Hamster Ovary cells. From the sequencing of he cloned recombinant plasmid, we confinned that it has virulence gene cassette consisting of ace, zot, ctx.4 and cf"~B gene. The ace and zot genes were composed of 291 hp and 1.200 bp with ATG initiation codon and TGA lennination codon, respectively. Nucleotide sequence of the ace gene exhibited 100% identity with that of V cholera E7946 El Tor Ogawa strains. But, nucleolide and amino acid sequence comparison of the zot gene exhibited 99% and 98.8% identity with that of V cholerae 395 Classical Ogawa stram, respectively. Specially. the Ala-100, Ala-272 and Ala-281 sites of Zoi polypeptide presented in V choleme 395 Classical Ogawa strain are replaced by Val in V cholerae KNIH002.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2009.05a
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• pp.155-158
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• 2009

This study was investigated to know the thermal decomposition and measure the reaction time and temperature by EIDS cook-off test for the propellant ingredients and 2 kinds of HTPE propellants. The thermal analysis of the propellant ingredients used in this study showed that the thermal stability of these materials decreases in the following order : AP > HTPE > AN > BuNENA. In addition, propellant HTPE 002 containing AN showed that an endothermic process at around $125^{\circ}C$ corresponding to the solid`solid phase change($II{\rightarrow}I$) of AN was followed by the exothermic process due to decomposition of BuNENA/AN until $200^{\circ}C$. HTPE 001 and HTPE 001 reacted at around $250^{\circ}C$ and $152^{\circ}C$ each other, and the temperature of them sharply increased at $115^{\circ}C$ from EIDS slow cook-off tests.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.3
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• pp.691-698
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• 2010

In this study Al-doped ZnO (AZO) thin films have been fabricated on Eagle 2000 glass substrates at various substrate temperature ($100{\sim}500^{\circ}C$) and working pressure (10 ~ 40 mTorr) by RF magnetron sputtering in order to investigate the structural, electrical, and optical properties of the AZO thin films. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The AZO thin films, which were deposited at $T=300^{\circ}C$ for 10 mTorr, shows the highest (002) orientation, and the full width at half maximum (FWHM) of the (002) diffraction peak is $0.42^{\circ}$. The lowest resistivity ($2.64{\times}10^{-3}\;{\Omega}cm$) with the highest cartier concentration ($5.29{\times}10^{20}\;cm^{-3}$) and a Hall mobility of ($6.23\;cm^2/Vs$) are obtained in the AZO thin films deposited at $T=300^{\circ}C$ for 10 mTorr. The optical transmittance in the visible region is approximately 80%, regardless of process conditions. The optical band-gap depends on the Al doping level as the substrate temperature increases and the working pressure decrease. The optical band-gap widening is proportional to cartier concentration due to the Burstein-Moss effect.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.8
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• pp.319-324
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• 2003

AIN thin films are deposited on Si (100) and $SiO_2$/Si substrates by using an RF magnetron sputtering method and by changing the conditions of deposition variables, such as RF power, $N_2$/Ar flow ratio, and substrate temperature ($T_sub$). For all the deposited AIN films, XRD Peak patterns are monitored to examine the effect of deposition condition on the crystal orientation. Highly (002)-oriented AIN films are obtained at following nominal deposition conditions; RF Power : 350W, $N_2$/Ar ratio = 10/20, T$_{sub}$ : $250^{\circ}C$, and working pressure = 5mTorr, respectively. AIN-based SAW devices are fabricated using a lift-off method by varying the thickness of AIN layer. Insertion losses and side-lobe rejection levels of fabricated SAW devices are extracted from their frequency response characteristics, which are also compared in terms of AIN thickness and substrate. Relationships between the film properties of AIN films and the frequency responses of SAW devices are discussed. It is concluded from the experimental results that the (002)-preferred orientation as well as the surface roughness of AIN film may play a crucial role of determining the device performances of AIN-SAW devices.s.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.97-101
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• 2005

ZnO thin films were grown at different plume-substrate (P-S) angles of 90$^{\circ}$ (on-axis PLD), 45$^{\circ}$ and 0$^{\circ}$ (off-axis PLD) using pulsed laser deposition. The x-ray diffraction pattern exhibiting a dominant (002) and a minor (101) peak of ZnO indicates all films were strongly c-axis oriented. By observing of (002) peak, the FWHMs of ZnO (002) peaks decreased and c-axis lattice constant approached the value of bulk ZnO as P-S angle decreased. Whereas the carrier concentration of ZnO thin film deposited at P-S angle of 90$^{\circ}$ was ~ 10$^{19}$ /cm$^{3}$, the Hall measurement of ZnO thin films deposited at P-S angles of 0$^{\circ}$ and 45$^{\circ}$ was impossible due to the decrease of the carrier concentration by the improvement of stoichiometry and crystalline quality. By decreasing P-S angle, the grain size of the films and the UV intensity investigated by photoluminescence (PL) increased and UV peak position showed red shift. The improvement of properties in ZnO thin films deposited by off-axis technique was due to the decrease of repulsive force between a substrate and the particle in plume and the relaxation of supersaturation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.3-6
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• 2009

Aluminum nitride (AIN) thin films were deposited on a polycrystalline 3C-SiC intermediate layer by a pulsed reactive magnetron sputtering system. Characteristics of the AIN/SiC heterostructures were investigated by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The columnar structure of AIN thin films was observed by FE-SEM. The surface roughness of AlN films on the 3C-SiC buffer layer was measured using AFM. The XRD pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum (FWHM) of the rocking curve near (002) reflections was $1.3^{\circ}$. The infrared absorbance spectrum indicated that the residual stress of AIN thin films grown on SiC buffer layers was nearly negligible. The 3C-SiC intermediate layers are promising for the realization of nitride based electronic and mechanical devices.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.462-466
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• 2007

Aluminum nitride (AlN) thin films were deposited on Si substrates by using polycrystalline (poly) 3C-SiC buffer layers, in which the AlN film was grown by pulsed reactive magnetron sputtering. Characteristics of grown AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. The columnar structure of AlN thin films was observed by FE-SEM. X-ray diffraction pattern proved that the grown AlN film on 3C-SiC layers had highly (002) orientation with low value of FWHM (${\Theta}=1.3^{\circ}$) in the rocking curve around (002) reflections. These results were shown that almost free residual stress existed in the grown AlN film on 3C-SiC buffer layers from the infrared absorbance spectrum. Therefore, the presented results showed that AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• BMB Reports
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• v.30 no.1
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• pp.80-84
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• 1997

The synthesis and secretion of human angiogenin in E. coli by the natural leader sequence has been studied. We constructed a recombinant plasmid containing human angiogenin cDNA which encompassed all the coding region including leader sequence required for secretion. The recombinant plasmid was introduced into a suitable E. coli host. The angiogenin was detected in the culture medium and periplasm upon the induction of gene expression. The molecular weight of the secreted angiogenin was identical to that of authentic angiogenin purfied from human plasma when estimated by SDS-PAGE and immunoblotting. showing that the natural leader sequence was recognized and processed by the secretion machinery of E. coli. The angiogenin concentration in the culture medium reached a maximum within 2 h when expressed at $37^{\circ}C$ with 0.02~2 mM IPTG. In contrast, the expression level increased gradually over time up to 11 h at $23^{\circ}C$ with 0.002~2 mM IPTG and at $37^{\circ}C$ with 0.002 mM IPTG.

• Korean Journal of Crystallography
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• v.4 no.2
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• pp.92-99
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• 1993

ZnO thin films were depositsd by Plasma enhanced CVD (PUW) using Diethylzinc and N2O gas, and micro-structue of ZnO thin films were investigated ZnO thin films composed of micro-crystallites was deposited at the substrate of loot. However, highly c-axis oriented ZnO thin films were deposited on the glass substrates above 200℃. TEM analysis revealed that an epitaxial (002) ZnO thin film was deposited on c-plane sapphire substrate at the substrate temperature of 350℃, and More patterns showing partial dislocation were observed at the grain boundary.