• E2M - 전기 전자와 첨단 소재
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• 제7권5호
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• pp.383-388
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• 1994

Deep levels in semi-insulating GaAs were observed by thermally stimulated current(TSC) measurement In the temperature ranges of 100-300K Tl(E$\_$c/-0.18eV), T2(E$\_$c/-0.20eV), T3(E$\_$c/-0.31eV), T4(E$\_$c/-0.40eV), and T5(E$\_$c/-O.43eV) traps have been observed. The TI, T2, and T5 traps seem to be related to the V$\_$As/, V$\_$Ga/-complex, and As$\_$Ga/$\^$++/ respectively. T4 trap is considered with respect to V$\_$Ga/-V$\_$As/ complex.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2018년도 추계학술대회
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• pp.321-324
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• 2018

최근 차량과 모든 사물을 연결하는 V2X(Vehicle to Everything) 기술의 진화가 빨라지고 있다. 특히 이동통신망을 활용한 C-V2X(Cellular V2X) 기술과 이와 결합된 서비스가 빠르게 발전하고 있는 추세를 확인할 수 있다. 하지만 우리나라는 교통사고 부상자 긴급 구난(e-Call, emergency Call) 서비스 분야에서 발전한 통신 기술에 비해 상대적으로 미흡하다고 볼 수 있으며, 사고 후 골든아워 내 구조차량의 도착비율도 현저히 낮고, 보행자 사고 비율도 높은 편이다. 따라서 본 논문은 C-V2X 통신과 안드로이드 운영체제를 적용한 통신 아키텍처를 설계하였고, 이를 기반으로 한 V2N(Vehicle to Nomadic Device) 통신을 이용하여 기존 e-Call 서비스의 개선 방안을 제시하였다.

• 대한수학회지
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• 제52권1호
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• pp.1-21
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• 2015

C-domains are defined via class semigroups, and every C-domain is a Mori domain with nonzero conductor whose complete integral closure is a Krull domain with finite class group. In order to extend the concept of C-domains to rings with zero divisors, we study v-Marot rings as generalizations of ordinary Marot rings and investigate their theory of regular divisorial ideals. Based on this we establish a generalization of a result well-known for integral domains. Let R be a v-Marot Mori ring, $\hat{R}$ its complete integral closure, and suppose that the conductor f = (R : $\hat{R}$) is regular. If the residue class ring R/f and the class group C($\hat{R}$) are both finite, then R is a C-ring. Moreover, we study both v-Marot rings and C-rings under various ring extensions.

• 대한화학회지
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• 제14권4호
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• pp.321-326
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• 1970

The relation between the heating temperature and the V.C.P(Vacuum Condensing Point) at different degree of vacuum through the sublimatographic separation was studied where by ; (1) Anthracene and Anthraquinone, ${\alpha}$-Naphtol and ${\beta}$-Naphthol, o-Aminobenzoicacid and p-Aminobeenzoicacid were easily separated from each of its mixtures as shown in Figure9, 10 and 11, while tailings appeared appreciably. The results were in good agreement with those expected from the $t_k$-V.C.P curves in Figures 3,4,5,6,7 and 8. (2) The relation between the degree of vacuum and the V.C.P. of ${\alpha}$-Naphthol and Anthracene at different heating temperatures appeared as follows and are shown in Figures 12 and 13.

• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.587-592
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• 2010

We have fabricated schottky barrier diode (SBDs) using polar (c-plane) and non polar (a-, m-plane) n-type 6H-SiC wafers. Ni/SiC ohmic contact was accomplished on the backside of the SiC wafers by thermal evaporation and annealed for 20minutes at $950^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The specific contact resistance was $3.6{\times}10^{-4}{\Omega}cm^2$ after annealing at $950^{\circ}C$. The XRD results of the alloyed contact layer show that formation of $NiSi_2$ layer might be responsible for the ohmic contact. The active rectifying electrode was formed by the same thermal evaporation of Ni thin film on topside of the SiC wafers and annealed for 5 minutes at $500^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The electrical properties of SBDs have been characterized by means of I-V and C-V curves. The forward voltage drop is about 0.95 V, 0.8 V and 0.8 V for c-, a- and m-plane SiC SBDs respectively. The ideality factor (${\eta}$) of all SBDs have been calculated from log(I)-V plot. The values of ideality factor were 1.46, 1.46 and 1.61 for c-, a- and m-plane SiC SBDs, respectively. The schottky barrier height (SBH) of all SBDs have been calculated from C-V curve. The values of SBH were 1.37 eV, 1.09 eV and 1.02 eV for c-, a- and m-plane SiC SBDs, respectively.

• 한국진공학회지
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• 제5권4호
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• pp.333-340
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• 1996

Cu 확산방지막으로서의 Tin의 특성을 면저항 특정, X선 회절 분석, SEM, AES, capacitance-voltage(C-V) 측정에 의하여 평가하고, Cu의 확산을 민감하게 알아내는 정도를 특성 평가 방법간에 비교하였다. 여러 가지 증착방법에 의하여 Cu/TiN/Ti/SiO2/Si 구조의 다층 박막시편을 제작하였으며, 이 시편을 10% H2/90% Ar분위기, 열처리 온도 500~$800{\circ}C$ 범위에서 2시간 동안 열처리하였다. TiN의 Cu 확산방지 효과가 소멸된 경우 Cu 박막 표면에서 불규칙한 모양의 spot을 관찰할 수 있었으며 outdiffusion된 Si를 검출할 수 있었다. MOS capacitor의 C-V 특성은 열처리 온도에 따라 급격하게 변화하였다. C-V 측정에서 inversion capacitance는 열처리 온도 500~$700^{\circ}C$범위에서 열처리 온도가 높아질수록 감소하다가 $800^{\circ}C$에서 크게 증가하였으며, 이러한 특성의 변화는 TiN을 통해서 $SiO_2$와 Si내로 확산된 Cu에 의하여 발생되는 것으로 생각된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.350-353
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• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• 대한한방내과학회지
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• 제15권2호
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• pp.148-162
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• 1994

A Literature study was done for identifying the effects of Bloodletting on C.V.A. The major results of the study were as follows. 1. The frequency of points of Bloodletting on C.V.A. were in order Twelve well point, Ship son, Gold SalivaJade Fluid, Paekoe, Chungchung, Sugu, Sosang, Taechu, Wijung, Kwanchung, etc. 2. The frequency of meridians of Bloodletting on C.V.A. were in order Extra-point, Tongmaek-kyong, Su-gworum-Shimpo-Kyong, Susoyang-Samcho-Kyong, Sutaeum-Pye-Kyong, Choktaeyang-Panggwang-Kyong. ete. 3. The frequency of the site of points of Bloodletting on C.V.A. were in order four extremities, face, neck and head, etc. 4. The effects of Bloodletting on C.V.A. is clear away heat and alleviate pain, therapy for waking up a patient from unconsciousness, dredge the meridian passage, expel wind-evil and promote blood circulation, emergency treatment for collapse, etc, 5. The effects of Bloodletting on the early stage of C.V.A. were wake up the patient from unconsciousness by clearing away the heat and The effects of Bloodletting on sequence of C.V.A. were dredge the meridian passage, 6. The frequency of points and meridians of Bloodletting on Hemiplegia were in order Twelve well point, Kyonjong, Extra-point, Chok soyang-Tam-Kyong, etc. 7. The frequency of points and meridians of Bloodletting on Aphasia were in order Gold Saliva Jade Fluid, Amun, Extra-point, Tongmaek-Kyong, etc. 8. The frequency of points and meridians of Bloodletting on Quadriplegia were in order Ship son, Twelve well point, Koktaek, Wijung, Extra-point, Chok soyang-Tam-Kyong, etc. 9, The frequency of points and meridians of Bloodletting on Vertigo were in order Four Gods Cleverness, Tuyu. Chanjuk, Paekoe, Taeyang, Extra-point, Yang-Kyong, etc. 10. The frequency of points and meridians of Bloodletting on Headache were in order Taeyang, Paekoe, Taechu, Extra-point, Tongmaek-Kyong, Yang-Kyong, etc. 11. The points and meridians of Bloodletting on Bells palsy were Chichang, Hyopko in Yangmyong-Kyong.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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• pp.10-13
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• 2006

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-Sic/SOI pressure sensor presents a high-sensitivity and excel lent temperature stability.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제11회 학술발표회 논문개요집
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• pp.93-93
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• 1996