• Korean Journal of Materials Research
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• v.10 no.2
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• pp.160-165
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• 2000

We have investigated the electrical and diffusion barrier properties of MgO produced on the surface of Cu (Mg) alloy. Also the diffusion barrier property of the interfacial MgO between Cu alloy and $SiO_2$ has been examined. The results show that the $150\;{\AA}$-MgO layer on the surface remains stable up to $700^{\circ}C$, preventing the interdiffusion of C Cu and Si in Si/MgO/Cu(Mg) structure. It also has the breakdown voltage of 4.5V and leakage current density of $10^{-7}A/\textrm{cm}^2/$. In addition, the combined structure of $Si_3N4(100{\AA})/MgO(100{\AA})$ increases the breakdown voltage up to lOV and reduces the leakage current density to $8{\tiems}10^{-7}A/\textrm{cm}^2$. Furthermore, the interfacial MgO formed by the chemical reac­t tion of Mg and $SiO_2$ reduces the diffusion of copper into $SiO_2$ substrate. Consequently, Cu(Mg) alloy can be applied as a g gate electrode in TFT /LCDs, reducing the process steps.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.28-35
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• 1997

Effects of rapid thermal annealing on the characteristics of Cu films deposited from the (hfac)Cu(VTMS) precursor and on the barrier properties of TiN layers were studied. By the post-annealing, the electrical characteristics of Cu/TiN and the microstructures of Cu films were significantly changed. The properties of Cu films were more sensitive to the annealing temperature than the annealing time. Sheet resistance started to increase above $400^{\circ}C$, and the interreaction between Cu and Ti and the oxidation of Cu layer were observed above $600^{\circ}C$. The grain growth of Cu with the (111) preferred orientation was found to be most pronounced at $500^{\circ}C$. It revealed that the optimum annealing conditions for MOCVD-Cu/PVD-TiN structures to enhance the electrical characteristics without degradation of TiN barriers were in the range of $400^{\circ}C$.

• Journal of Powder Materials
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• v.11 no.2
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• pp.171-178
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• 2004

Effects of liquid phase and reinforcing particle morphology on the sintering of Al-6 wt％Cu-10 vol％ $Al_2O_3$ or SiC particles were studied in regards to densification, structure and transverse rupture properties. The Al-Cu liquid phase penetrated the boundaries between the aluminum matrix powders and the interfaces with reinforcing particles as well, indicating a good wettability to the powders. This enhanced the densification during sintering and the resulting strength and ductility. Since most of the copper added, however, was dissolved in the liquid phase and formed a brittle $CuAl_2$ phase upon cooling rather than alloyed with the aluminum matrix, the strengthening effect by the copper was not fully realized. Reinforcing particles of agglomerate type were found less suitable for the liquid phase sintering than solid type particles. $Al_2O_3$ and SiC particles protluced little difference on the sintering behavior but their size had a large effect. Repressing of the sintered composites increased density and bending properties but caused debonding at the matrix-particle interfaces and also fracturing of the particles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.535-536
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• 2005

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10 nm to 50 nm, we have obtained that the optimum CuPc layer thickness is around 40 nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$C_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc:$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL14004).

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.89-98
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• 2003

The electrical and mechanical properties of sputtered Cu(Mg) films are investigated for highly reliable interconnects. The roughness, adhesion, hardness and resistance to thermal stress of Cu(Mg) film annealed in vacuum at $400^{\circ}C$ for 30min were improved than those of pure Cu film. Moreover, the flat band voltage(V$_{F}$ ) shift in the Capacitance-Voltage(C-V) curve upon bias temperature stressing(BTS) was not observed and leakage currents of Cu(Mg) into $SiO_2$ were three times less than those of pure Cu. Because Mg was easy to react with oxide than Cu and Si after annealing, the Mg Oxide which formed at surface and interface served as a passivation layer as well.

• Korean Journal of Materials Research
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• v.14 no.4
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• pp.246-250
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• 2004

We have investigated the effects of boron added to Cu film on the Cu-Ti reaction and microstructural evolution of Cu(B) alloy film during annealing of Cu(B)/Ti/$SiO_2$/Si structure. The result were compared with those of Cu(B)/$SiO_2$ structure to identify the effects of Ti glue layers on the Boron behavior and the result grain growth of Cu(B) alloy. The vacuum annealing of Cu(B)/Ti/$SiO_2$ multilayer structure allowed the diffusion of B to the Ti surface and forming $TiB_2$ compounds at the interface. The formed $TiB_2$ can act as a excellent diffusion barrier against Cu-Ti interdiffusion up to $800^{\circ}C$. Also, the resistivity was decreased to $2.3\mu$$\Omega$-cm after annealing at $800^{\circ}C$. In addition, the presence of Ti underlayer promoted the growth Cu(l11)-oriented grains and allowed for normal growth of Cu(B) film. This is in contrast with abnormal growth of randomly oriented Cu grains occurring in Cu(B)/$SiO_2$ upon annealing. The Cu(B)/Ti/$SiO_2$ structure can be implemented as an advanced metallization because it exhibits the low resistivity, high thermal stability and excellent diffusion barrier property.

• Journal of the Korean Magnetics Society
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• v.3 no.2
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• pp.130-134
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• 1993

The magnetic properties of the amorphous $Fe_{73.5-X}Co_{X}Cu_{1}Nb_{3}Si_{13.5}B_{9}(x=2,\;4)$ alloys, fabricated by a single roll rapid quenching technique and annealed at $400~650^{\circ}C$, have been investigated. The optimum annealing temperature is $550^{\circ}C$ for the amorphous $Fe_{71.5}Co_{2}Cu_{1}Nb_{3}Si_{13.5}B_{9}$ alloy. The properties of the nanocrystalline $Fe_{71.5}Co_{2}Cu_{1}Nb_{3}Si_{13.5}B_{9}$ alloy show the relative permeability of $1.1{\times}10^{4}$ and the coercive force of 0.22 Oe at 1 kHz. When annealed at $600^{\circ}C$, the nanocrystalline $Fe_{69.5}Co_{4}Cu_{1}Nb_{3}Si_{13.5)B_{9}$ alloy shows the relative permeability of $1.0{\times}10^{4}$ and the coercive force of 0.19 Oe at 1 kHz. From the X-ray measurement, it is found that the remarkably improved soft magnetic properties are the effect of the formation of $\alpha$-Fe(Si) grain. By the results of FMR exper-imeIlt, the optimum annealing condition is just below temperature which the peak-to-peak line width of FMR spectrum increase rapidly.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.853-854
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• 2006

Warm compaction powder metallurgy was used to produce a $Ti_3SiC_2$ particulate reinforced Cu matrix composite. Fabrication parameters and warm compaction behaviors of Cu powder were studied. Based on the optimized fabrication parameters a Cu-based electrical contact material was prepared. Results showed that in expend of some electrical conductivity, addition of $Ti_3SiC_2$ particulate increased the hardness, wear resistivity and anti-friction ability of the sintered Cu-base material.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.124-124
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• 2002

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.955-962
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• 2002

The microstructure change of brazed $Si_3N_4$/Stainless steel 316 joint with Cu buffer layer were examined to clarify the effects of brazing process conditions such as brazing time and temperature on the mechanical properties and reliability of brazed joints. For the brazed joint above 900${\circ}C$, the Cu buffer layer was completely dissolved into brazing alloy and the thickness of reaction product formed at $Si_3N_4$/brazing alloy joint interface was abruptly increased, which could increase the amounts of residual stress developed in the joint. The fracture strength of brazed $Si_3N_4$/Stainless steel 316 joint with Cu buffer layer at 950${\circ}C$ was much reduced comparing to those of joints brazed at the lower temperature. But, it was found that the effects of brazing time was not critical on the mechanical properties as well as the reliability of $Si_3N_4$/Stainless steel 316 joint with Cu buffer layer brazed at the temperature below 900${\circ}C$.