• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.22 no.11
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• pp.760-766
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• 2010

Excessive heat occurs during semiconductor manufacturing process. Thus, precise control of temperature is required to maintain constant chamber-temperature and also wafer-temperature in the chamber. Compared to an industrial chiller, semiconductor chiller's power consumption is very high due to its continuous operation for a year. Considering the high power consumption, it is necessary to develop an energy efficient chiller by optimizing operation control. Therefore, in this study, a semiconductor chiller is experimentally investigated to suggest energy-saving direction by conducting load change, temperature rise and fall and control precision experiments. The experimental study shows the cooling capacity of dual-channel chiller rises over 30% comparing to the conventional chiller. The time and power consumption in the temperature rising experiment are 43 minutes and 8.4 kWh, respectively. The control precision is the same as ${\pm}1^{\circ}C$ at $0^{\circ}C$ in any cases. However, it appears that the dual channel's control precision improves to ${\pm}0.5^{\circ}C$ when the setting temperature is over $30^{\circ}C$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.26-33
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• 2010

This paper presents a multi-channel capacitive touch sensing unit for SoC applications. This unit includes a simple common processing unit and switch array to detect the touch sensing input by capacitive-time(C-T) conversion method. This touch sensor ASIC is designed based on the Capacitive-Time(C-T) conversion method to have advantages of small current and chip area, and the minimum resolution of the unit is 41 fF per count with the built-in sensing oscillator, LDO regulator and $I^2C$ for no additional external components. This unit is implemented in 0.18 um CMOS process with dual supply voltage of 1.8 V and 3.3 V. The total power consumption of the unit is 60 uA and the area is 0.26 $mm^2$.

• Molecules and Cells
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• v.44 no.10
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• pp.758-769
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• 2021

Calcium homeostasis modulator 1 (CALHM1) is a membrane protein with four transmembrane helices that form an octameric ion channel with voltage-dependent activation. There are four conserved cysteine (Cys) residues in the extracellular domain that form two intramolecular disulfide bonds. We investigated the roles of C42-C127 and C44-C161 in human CALHM1 channel biogenesis and the ionic current (I_CALHM1). Replacing Cys with Ser or Ala abolished the membrane trafficking as well as I_CALHM1. Immunoblotting analysis revealed dithiothreitol-sensitive multimeric CALHM1, which was markedly reduced in C44S and C161S, but preserved in C42S and C127S. The mixed expression of C42S and wild-type did not show a dominant-negative effect. While the heteromeric assembly of CALHM1 and CALHM3 formed active ion channels, the co-expression of C42S and CALHM3 did not produce functional channels. Despite the critical structural role of the extracellular cysteine residues, a treatment with the membrane-impermeable reducing agent tris(2-carboxyethyl) phosphine (TCEP, 2 mM) did not affect I_CALHM1 for up to 30 min. Interestingly, incubation with TCEP (2 mM) for 2-6 h reduced both I_CALHM1 and the surface expression of CALHM1 in a time-dependent manner. We propose that the intramolecular disulfide bonds are essential for folding, oligomerization, trafficking and maintenance of CALHM1 in the plasma membrane, but dispensable for the voltage-dependent activation once expressed on the plasma membrane.

• Proceedings of the IEEK Conference
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• 2003.07a
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• pp.89-92
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• 2003

A geometrically uniform code in AWGN channel has strong symmetry properties such as a) the distance profiles form codewords On C to all other codewords are all the same, and b) all Voronoi regions of codewords in C have the same shape. Such properties make the word error probability of geometrically uniform codes be transparent to the transmitted codeword. In this paper, we extend the geometrically uniform codes in AWGN channel to the geometrical uniform codes in fading channel with multiple transmit antennas.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.5
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• pp.59-68
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• 1998

This paper proposes a neural network algorithm for a channel assignment in cellular mobile communications. The proposed algorithm is developed base on hopfield neural network in order to minimize the number of channel without a confliction between cells. To compare the performance of the proposed algorithm, we used seven benchmark problems selected from kunz's and funabiki's papers. Experimental results show that the convergence times are reduced form 27% to 66% compared with Kunz's and funabiki's algorithm and vonvergence rates are improved to 100%.

• Journal of the Korean Magnetic Resonance Society
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• v.11 no.2
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• pp.85-94
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• 2007

Vanilloid receptor I [transient receptor potential vanilloid subfamily member 1 (TRPV1), also known as VR1] is a non-selective cationic channel activated by noxious heat, vanilloids, and acid, thereby causing pain. VR1 possesses six transmembrane domain and N-and C-terminus cytosolic domains, and appears to be a homotetramer. We studied the structural properties of Cterminus of VR1 (VR1C) using CD and NMR spectroscopy. DPC micelles, with a zwitterionic surface, and SDS micelles, with a negatively charged surface, were used as a membrane mimetic model system. Both SDS and DPC micelles could increase the stability of helical structures and/or reduce the aggregation form of the VR1C. However, the structural changing mode of the VR1C induced by the SDS and DPC micelles was different. The changes according to the various pHs were also different in two micelles conditions. Because the net charges of the SDS and DPC micelles are negative and neutral, respectively, we anticipate that this difference might affect the structure of the VR1C by electrostatic interaction between the surface of the VR1C and phospholipids of the detergent micelles. Based on these similarity and dissimilarity of changing aspects of the VR1C, it is supposed that the VR1C probably has the real pI value near the pH 7. Generally, mild extracellular acidic pH ($6.5{\sim}6.8$) potentiates VRI channel activation by noxious heat and vanilloids, whereas acidic conditions directly activate the channel. The channel activation of the VRI might be related to the structural change of VR1C caused by pH (electrostatic interactions), especially near the pH 7. By measuring the $^1-^{15}N$ TROSY spectra of the VR1C, we could get more resolved and dispersed spectra at the low pH and/or detergent micelles conditions. We will try to do further NMR experiments in low pH with micelles conditions in order to get more information about the structure of VR1C.

• Proceedings of the SAREK Conference
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• 2008.11a
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• pp.215-220
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• 2008

A microchannel PCHE is manufactured by the two technologies of micro photo-etching and diffusion bonding. In this paper, heat transfer and pressure drop characteristics by applying various configuration for the flow channel in the microchannel PCHE is experimentally investigated. The flow channel configurations are designed three types such as straight, wavy and offset strip channels. The performance experiment of each configuration is performed for Reynolds numbers in ranges of $100{\sim}700$ under various flow conditions for the hot side and the Reynolds number of cold side is fixed at 350. The inlet temperatures of the hot side and cold side are conducted as $40^{\circ}C$ and $20^{\circ}C$, respectively. The heat transfer performance of wavy channel, which was similar to that of offset strip channel, was much higher than that of straight channel. The effectiveness of wavy channel and offset strip channel was evaluated as about $0.5{\sim}0.9$. The pressure drop of wavy channel was highest among configurations and that of offset strip channel was lower than that of straight channel because the round curved surface of each strip edge was reduced the pressure loss.

• Journal of IKEEE
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• v.27 no.4
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• pp.630-635
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• 2023

SiC is replacing the position of silicon in the power semiconductor field due to its superior resistance to adverse conditions such as high temperature and high voltage compared to silicon, which occupies the majority of existing industrial fields. In this paper, the gate of 4H-SiC Planar MOSFET, one of the power semiconductor devices, was formed with aluminium to make the contrast and parameter values consistent with polycrystalline Si gate, and the threshold voltage, breakdown voltage, and IV characteristics were studied by varying the channel doping concentration of SiC MOSFET.

• Journal of Microbiology and Biotechnology
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• v.14 no.3
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• pp.456-465
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• 2004

$K^+$ efflux through a certain type of $K^+$ channels causes the change of membrane potential and leads to cAMP synthesis in the transmembrane cell signaling for the initiation of sperm motility in the salmonid fishes. The addition of $Ca^{2+}$ conferred motility to the trout sperm that were immobilized by external $K^+$ and other alkaline metals, $Rb^+$ and $Cs^{2+}$, suggesting the participation of external $Ca^{2+}$ in the initiation of sperm motility. L-type $Ca^{2+}$ channel blockers such as nifedipine, nimodipine, and FS-2 inhibited the motility, but N-type $Ca^{2+}$ channel blocker, w-conotoxin MvIIA, did not. On the other hand, the membrane hyperpolarization and cAMP synthesis were suppressed by $Ca^{2+}$ channel blockers, nifedipine, and trifluoroperazine. Furthermore, these suppressions were relieved by the addition of $K^+$ ionophore, valinomycin. Inhibitors of calmodulin, such as W-7, trifluoperazine, and calrnidazol-C1, inhibited the sperm motility, membrane hyperpolarization, and cAMP synthesis. The results suggest that $Ca^{2+}$ influx through $Ca^{2+}$ channels that are sensitive to specific $Ca^{2+}$ channel blockers and calmodulin participate in the changes of membrane potential, leading to synthesis of cAMP in the cell signaling for the initiation of trout sperm motility.

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.132-138
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• 1991

A comparision was made on the influence of BPSG flow temperatures on the electrical properties in submicron CMOS DRAMs containing two BPSG layers. Three different combinations of BPSG flow temperature such as $850^{\circ}C/850^{\circ}C,\;850^{\circ}C/900^{\circ}C,\;and\;900^{\circ}C/900^{\circ}C$ were employed and analyzed in terms of threshold, breakdown and isolation voltage along with sheet resistance and contact resistance. In case of $900^{\circ}C/900^{\circ}C$ flow, the threshold voltage of NMOS was decreased rapidly in channel length less than $0.8\mu\textrm{m}$ with no noticeable change in PMOS and a drastic decrease in breakdown voltages of NMOS and PMOS was observed in channel length less than and equal to $0.7\mu\textrm{m}$ and $0.8\mu\textrm{m}$, respectively. Little changes in threshold and breakdown voltages of NMOS and PMOS, however, were shown down to channel length of $0.6\mu\textrm{m}$ in case of $850^{\circ}C/850^{\circ}C$ flow. The isolation voltage was increased with decreasing BPSG flow temperature. A significant increase in the sheet resistance and contact resistance was noticeable with decreasing BPSG flow temperature from $900^{\circ}C$ to $850^{\circ}C$. All these observations were rationalized in terms of dopant diffusion and activation upon BPSG flow temperature. Some suggestions for improving contact resistance were made.