• Tribology and Lubricants
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• v.22 no.3
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• pp.127-130
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• 2006

DLC (Diamond Like Carbon) films show very desirable surface interactions with high hardness, low friction coefficient, and good wear-resistance properties. The friction behavior of hydrogenated DLC film is dependent on tribological environment, especially surrounding temperature. In this work, the tribological behaviors of DLC (Diamond-like carbon) films, prepared by the radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method, were studied in elevated temperatures. The ball-on-disk tests with DLC films on steel specimens were conducted at a sliding speed of 60 rpm, a load of 10N, and surrounding various temperatures of $25^{\circ}C,\;40^{\circ}C,\;55^{\circ}C\;and\;75^{\circ}C$. The results show considerable dependency of DLC tribological parameters on temperature. The friction coefficient decreased as the surrounding temperature increased. After tests the wear tracks of hydrogenated DLC film were analyzed by optical microscope, scanning electron spectroscopy (SEM) and Raman spectroscopy. The surface roughness and 3-D images of wear track were also obtained by an atomic force microscope (AFM).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.47-52
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• 2009

We studied the electrical characteristics of low-k SiOCH interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1 sccm step with the constant flow rate of 60 sccm $O_2$ in process chamber. The vibrational groups of SiOCH thin films were analyzed by FT!IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. The heat treatment on SiOCH thin films reduced the FTIR absorption intensity of the Si-O-$CH_3$ bonding group and Si-$CH_3$ bonding group but increased the intensity of Si-O-Si(C) bonding group. The SiOCH ILD films could have low dielectric constant $k\;{\simeq}\;2$ and also be reduced further by decreasing the $CH_3$ group density and increasing Si-O-Si(C) group density through annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.51-54
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• 2000

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin films were prepared on Pt/Ti/SiO$_2$/Si substrate by RF magnetron sputtering method. We investigated effect of deposition conditions (especially RF input power) on structural properties of BST thin films. Deposit conditions of BST films were set working gas ratio, Ar:O$_2$= 70 : 30, working pressure 10mTorr, and RF input power 25W, 50W, 75W and 100W. Post-annealing using rapid thermal annealing(RTA) performed at 45$0^{\circ}C$, 55$0^{\circ}C$, $650^{\circ}C$, and 75$0^{\circ}C$ in oxigen ambient for 60 sec, respectively. The structural properties of BST films on Pt/Ti/SiO$_2$/Si substrate analysed by X-ray diffraction(XRD).).).

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1485-1487
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• 1997

Platinum-Cobalt alloy thin films were deposited on $Al_2O_3$ substrates by co sputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on $Al_2O_3$ substrate by lift-off method and investigated the physical and electrical characteristics of these films under sputtering conditions (; the input power, working vacuum), annealing conditions (; temperature, time) and also after annealing these films. After the annealing treatment at $800^{\circ}C$ for 60min, the resistivity and sheet resistivity of Pt-Co thin films was $0.0302{\mu}{\Omega}{\cdot}cm$ and $0.1{\Omega}/{\square}$, respectively, and the TCR value of Pt-Co RTD was $3600ppm/^{\circ}C$ in the temperature range of $25{\sim}400^{\circ}C$. These results indicate that Pt-Co thin films have potential for the excellent RTD temperature sensors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.200-203
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• 2003

Ferroelectric europium-substitution $Bi_4Ti_3O_{12}$ thin films were fabricated by spin-coating onto a Pt/Ti/$SiO_2$/Si substrate. The $Bi_{3.25}Eu_{0.75}Ti_3O_{12}$ (BET) films have polycrystalline structure annealed at 700 C. We investigated that the influence of $Bi_4Ti_3O_{12}$ thin films by substituting for Bi ions with Bi ions using X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). From the XPS measurement, it was suggested that the stability of the metal-oxygen octahedral should be related to substitute for Bi ions with Eu ions at annealed $800^{\circ}C$. The BET thin films showed a large remanent polarization (2Pr) of $60.99C/cm^2$ at an applied voltage of 10 V. The BET thin films exhibited no significant degradation of switching charge at least up to $5{\times}10^9$ switching cycles at a frequency of 50 kHz.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2544-2546
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• 1998

The electrical and physical charateristics of Pt-Co alloy thin films on $Al_2O_3$ substrate, deposited by r.f cosputtering respectively, were analyzed with thickness of thin films ($1700{\sim}10000{\AA}$) and increasing annealing temperature ($800{\sim}1000^{\circ}C$). At input power of Pt : 4.4 W/$cm^2$, Co : 6.91 W/$cm^2$, working vacuum of 10 mTorr and annealing conditions of $1000^{\circ}C$) and 60 min, the resistivity and sheet resistivity of Pt-Co thin films with thickness of $3000{\AA}$ was $15{\mu}{\Omega}{\cdot}cm$ and 0.5 ${\Omega}/{\square}$, respectively. The TCR value of Pt-Co alloy thin films was measured with various thickness of thin films and annealing conditions. The optimum TCR value of 3850 ppm/$^{\circ}C$ in temperature range($200{\sim}400^{\circ}C$) is gained under conditions $3000{\AA}$ of thin films thickness and $1000^{\circ}C$ of annealing temperature. The thermal charateristics of Pt-Co micro heaters were analysed with Pt-Co RTD integrated on the same substrate. In the analysis of characteristics of Pt-Co micro heaters, the Pt-Co micro heaters with thickness of $3000{\AA}$ and annealing temperature of $1000^{\circ}C$ had a good linearity and temperature is up to $468.2^{\circ}C$ with 2.1 watts of the heating power.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1352-1354
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• 1998

$LiNbO_3$ transistor showed relatively stable characteristic, low interface trap density, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$ thin films grown directly on p-type Si(100) substrates by 13.56 MHz rf magnetron sputtering system for FRAM applications. To take advantage of low temperature requirement for growing films, we deposited $LiNbO_3$ films lower than $300 ^{\circ}C$. RTA(Rapid Thermal Anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60 sec. We learned from X-ray diffraction that the RTA annealed films were changed from amorphous to poly-crystalline $LiNbO_3$ which exhibited (012), (015), and (022) orientations. The I-V characteristics of $LiNbO_3$ films before and after anneal treatment showed that RTA improved the leakage current of films. The leakage current density of films decreased from $10^{-5}$ to $10^{-7} A/cm^2$ at room temperature measurement. Breakdown electric field of the films exhibited higher than 500 kV/cm. The C-V curves showed the clockwise hysteresis represents ferroelectric switching characteristics. From C-V curves, we calculated dielectric constant of thin film $LiNbO_3$ as 27.5 which is close to that of bulk value.

• Korean Journal of Materials Research
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• v.14 no.12
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• pp.840-845
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• 2004

Tin dioxide ($SnO_2$) thin films were prepared on Si(100) substrate by PE-ALD using the $DBDTA((CH_{3}CO_2)_{2}Sn[(CH_2)_{3}CH_3]_2)$ Precursor. The properties were studied as a function of source temperature, substrate temperature, and purging time. Scanning probe microscopic images at the source temperature $50^{\circ}C$ and the substrate temperature $300^{\circ}C$ shows lower roughness than those $40/60^{\circ}C$ source and $200/400^{\circ}C$ substrate temperature samples. The purging time for optimum process was 8sec and the deposition rate was about 1 nm per 10 cycles. The conductance of $SnO_2$ thin film showed a constant region in the range of $200^{\circ}C\;to\;500^{\circ}C$. The thin films deposited for 200 cycle show a better sensitivity to CO gas.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.45-50
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• 1998

Platinum-Cobalt alloy thin films were deposited on $Al_{2}O_{3}$ substrate by magnetron cosputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on the $Al_{2}O_{3}$ substrate by lift-off method and investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, annealing temperature and time, and also after annealing these films. The resistivity and sheet resistivity of these films were decreased with increasing the annealing temperature. At input power of Pt : $4.4\;W/cm^{2}$, Co : $6.91\;W/cm^{2}$, working vacuum of 10 mTorr and annealing conditions of $800^{\circ}C$ and 60 min, the resistivity and sheet resistivity of Pt-Co thin films was $15{\mu}{\Omega}{\cdot}cm$ and $0.5{\Omega}/{\square}$, respectively and the TCR value of Pt-Co alloy thin films with thickness of $3000{\AA}$ were $3740ppm/^{\circ}C$ in the temperature range of $25{\sim}600^{\circ}C$. These results indicate that Pt-Co alloy thin films have potentiality for the RTD temperature sensors.

• Korean Journal of Materials Research
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• v.2 no.5
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• pp.353-359
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• 1992

Thermal oxidation and plasma enhanced chemical vapor deposition of tantalum oxide thin films on p-type (100) Si substrates were studied to examine the dielectric nature of T$a_2O_5$ as a Al/T$a_2O_5$/p-Si capacitor. Microstructure and dielectric properties of the capacitors were investigated by XRD, AES, high frequency C-V analyzer, I-V meter and TEM. XRD analysis showed that the structure of T$a_2O_5$ films were amorphous, but the films were crystallized to hexagonal $\delta$-T$a_2O_5$ by 65$0^{\circ}C$ thermal oxidation treatment. It was found that the stoichiometry of the films was more or less close to 2 : 5. Leakage current density and relative dielectric constant of thermal oxidation T$a_2O_5$ film at 60$0^{\circ}C$ was 5.0${ imes}10^{-6}$/A/c$m^2 and 31.5, respectively. In the case of PECVD T$a_2O_5$film deposited at 0.47W/c$m^2 they were 2.5${ imes}10^{-5}$/A/$ extrm{cm}^2$ and 24.0, respectively. The morphology of the films and interfaces were investigated by TEM.