• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 International Symposium
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• pp.253-257
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• 2003

The low temperature flip chip technique is applied to the package of the temperature-sensitive devices for LCD systems and image sensors since the high temperature process degrades the polymer materials in their devices. We will introduce the various low temperature flip chip bonding techniques; a conventional flip chip technique using eutectic Bi-Sn (mp: $138^{\circ}C$) or eutectic In-Ag (mp: $141^{\circ}C$) solders, a direct bump-to-bump bonding technique using solder bumps, and a low temperature bonding technique using low temperature solder pads.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.195-196
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• 2010

• Journal of Welding and Joining
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• 제29권1호
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• pp.52-58
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• 2011

In this paper, the direct bonding process between FPCB and HPCB was studied. By using an ultrasonic horn which is mounted on the ultrasonic bonding machine, it is alternatively possible to bond the gold pads attached on the FPCB and HPCB at room temperature without an adhesive like ACA or NCA. The process condition for obtaining more bonding strength than 0.6 Kgf, which is commercially required, was carried out as 40 kHz of frequency, 0.6 MPa of bonding pressure and 2 second of bonding time. The peel off test was performed for evaluating bonding strength which results in more than 0.8 Kgf.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.293-294
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• 2010

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1005-1008
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• 2003

We report a new FCOG (flip chip on glass) technique using solder bumps for display packaging applications. The In and Sn solder bumps of 40 ${\mu}m$ pitches were formed on Si and glass substrate. The In and Sn bumps were bonded at 125 at the pressure of 3 mN/bump. The metallurgical bonding was confirmed using cross-sectional SEM. The contact resistance of the solder joint was 65 $m{\Omega}$ which was much lower than that of the joint made using the conventional ACF bonding technique. We demonstrate that the new COG technique using solder bump to bump direct bonding can be applied to advanced LCDs that lead to require higher quality, better resolution, and lower power consumption.

• 한국정밀공학회지
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• 제32권9호
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• pp.799-805
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• 2015

The further development of information, communication and digital media technologies requires the use of advanced, miniaturized semiconductor chips that operate at a high frequency. Die bonding and wire bonding methods for semiconductor packaging have been replaced by direct attachment to the substrate after forming a bump on the chip. However, the height of the bump or ball is an important factor for defects during assembly. This paper proposes an algorithm to measure the height of the bumps or balls in semiconductor packaging with greater accuracy. The performance of the proposed algorithm is experimentally validated. Non-contact 3D measurements of a shiny round ball is quite difficult, and it is not easy to obtain accurate data. This paper thus proposes an optical method and technique to improve the measurement accuracy.

• 대한기계학회논문집A
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• 제36권4호
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• pp.395-403
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• 2012

오늘날 접합시 열에 의한 재료 손상과 접착제(ACA, NCA) 이용으로 부품간의 정렬이 문제가 되고있다. 따라서, 본 논문은 FPCB 와 HPCB 금속(Au) PAD를 직접 접합하였다. 이때 박막인 재료에 손상을 입히는 열, 부품간의 정렬에 문제가 되는 접착제(ACA, NCA)를 사용하지 않고 상온에서 접합을 하였다. 접합시 초음파 혼을 이용하여 접합을 하였으며, 초음파혼은 40kHz이다. 공정 조건은 접합압력 0.60MPa, 접합시간 0.5, 1.0, 1.5, 2.0sec이다. 또한, 산업에서 요구하는 접합강도는 필강도 테스트 결과값으로 0.60Kgf 이상이며, 본 실험에서는 접합강도가 0.80MPa 이상이 나왔다. 이로서, 열에 의한 재료 손상과, 접 착제(ACA, NCA)에 의한 정렬 문제를 해결하였다. 그리고 산업산업에서 바로 적용하고 생산할 수 있는 FPCB, HPCB 시료 제작을 하였다.

• 한국정보통신학회논문지
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• 제3권3호
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• pp.661-669
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• 1999

프로브 카드는 IC(integrated circuit) 칩을 테스트할 때, 테스트 시스템의 가장 중요한 부분의 하나이다. 본 연구는 다수의 반도체 칩을 동시에 테스트 할 수 있는 범프(bump)형 수직형 프로브 카드에 관한 것이다. 프로브는 범프 팁을 가지는 실리콘 캔틸레버로 구성되어 있다. 캔틸레버의 최적 크기를 결정하기 위하여 캔틸레버의 크기는 유한요소해석에 의하여 결정되었다. 프로브는 SDB웨이퍼를 사용하여 RIE, 등방성 에칭, 그리고 벌크 마이크로머시닝에 의하여 제조되었다. FEM에 의해 결정된 최적 크기로 제작된 프로브 카드는 범프의 높이가 30$\mum$, 캔틸레버의 두께가 $\mum$, 빔의 폭이 100 $\mum$, 길이가 400 $\mum$, 이었다. 제조된 프로브 카드의 접촉 테스트에서 측정된 접촉 저항은 $2 \Omega$ 미만이고, 2만회의 접촉동안 접촉 저항의 변화가 거의 없는 특성을 보였다. 따라서 20,000회 이상의 수명을 가질 수 있음을 알 수 있었다.