• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.12
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• pp.597-600
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• 2002

Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size and low cost, high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible suspended FBAR using surface micromachining. Membrane is composed $Si_3N_4SiO_2Si _3N_4$ multi layer and air gap is about 50${\mu}{\textrm}{m}$. Firstly, We perform one dimensional simulation applying transmission line theorem to verify resonance characteristic of the FBAR. Process of the FBAR is used MEMS technology. Fabricated FBAR resonate at 2.4GHz, $K^2_{eff}$ and Q are 4.1% and 1100.

• The Journal of Korea Robotics Society
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• v.2 no.3
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• pp.249-254
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• 2007

본 논문에서는 웨이퍼 레벨 밀봉 실장된 수직 운동 가속도 신호를 감지할 수 있는 초소형 Z축 가속도 센싱 엘리먼트를 제작하였다. 초소형 Z축 가속도 센싱 엘리먼트는 수직 방향의 정전용량 변화를 필요로 하기 때문에 단일 기판상에 수직 단차의 형성을 가능케 하는 확장된 희생 몸체 미세 가공 기술 (Extended Sacrificial Bulk Micromachining, ESBM) 을 이용하여 제작되었다. 확장된 희생 몸체 미세 가공 기술을 이용하면 정렬오차가 없이 상하부 양쪽에 수직 단차를 갖는 실리콘 구조물의 제작이 가능하다. 또한, MEMS 센싱 엘리먼트의 부유된 실리콘 구조물을 보호하기 위하여 웨이퍼 레벨 밀봉 실장 기술이 적용하여 고신뢰성, 고수율, 고성능의 Z축 가속도 센서를 제작하였다. 신호 처리 회로와 가속도 센서를 결합하여 Z축 가속도 센싱 시스템을 제작하였고 운동가속도 범위 10 g 이상, 정지 드리프트 17.3 mg 그리고 대역폭 60 Hz 이상의 성능을 나타내었다.

• Journal of Sensor Science and Technology
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• v.21 no.2
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• pp.121-126
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• 2012

Piezoresistive type contact force sensor array is fabricated by (111) Silicon bulk micromachining for continuous blood pressure monitoring. Length and width of the unit sensor structure is $200{\mu}m$ and $190{\mu}m$, respectively. The gap between sensing elements is only $10{\mu}m$. To achieve wafer level packaging, the sensor structure is capped by PDMS soft cap using wafer molding and bonding process with $10{\mu}m$ alignment precision. The resistance change over contact force was measured to verify the feasibility of the proposed sensor scheme. The maximum measurement range and resolution is 900 mm Hg and 0.57 mm Hg, respectively.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.3
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• pp.23-28
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.56-56
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• 2003

최근 정보통신 분야의 급격한 발달로 인하여 무선통신에 사용되는 주파수 영역 또한 계속 높아짐에 따라 대역통과 필터 소자의 삽입 손실, 소비 전력, 크기, MMIC화에 대한 많은 연구가 진행되고 있다 압전 현상을 이용한 박막형 공진기가 이러한 요구를 충족시키고, 현재의 SAW filter를 대체할 소자로 떠오르고 있다. 본 실험에서는 단결정 미세 구조를 만들 수 있고, 압전 효과 또한 우수하며, Surface Micromachining보다 비교적 제조 공정이 간단하고 선택적 에칭이 가능한 Bulk Micromachining을 이용하여 Si$_3$N$_4$ Membrane을 이용한 중심주파수 5.2GHz인 두께 진동모드 Film Bulk Acoustic Wave Resonator(FBAR)를 제작하고 공진기의 고주파 특성을 평가하였다. Membrane구조 형성을 위해 Backside면인 Si$_3$N$_4$, Si은 RIE(Reactive Ion Etching)와 선택적 에칭용액인 KOH로 각각 에칭하여 Membrane을 갖는 구조로 중심주파수 5.2GHz인 두께 진동모드 FBAR를 설계 및 제조하였다. 체적 탄성파 공진 현상은 r.f Magnetron Sputtering법으로 증착한 AIN 압전박막과 Mo전극으로부터 발생 가능하였다. 본 연구에서는 0.9$\mu\textrm{m}$-Si$_3$N$_4$ Membrane을 이용해 FBAR를 제작/평가하고, RIE을 통해 Membrane을 제거해 가면서 공진기의 특성 즉, Quality factor와 유효전기기계결합계수(K$_{eff}$) 및 S parameter특성을 비교 측정해 보았다. 측정해본 결과 Membrane Free일때가 훨씬더 공진 특성이 우수함을 볼 수 있다

• Journal of the Optical Society of Korea
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• v.7 no.3
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• pp.160-164
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• 2003

Materials processing by ultrashort pulsed laser is actively being applied to micromachining technology due to its advantages with regard to non-thermal machining. In this study, materials processing with ultrashort pulses was studied by using the high repetition rate of a 800 nm Ti:sapphire regenerative amplifier. This revealed that the highly precise micromachining of metallic thin film and bulk glass with a minimal heat affected zone (HAZ) could be obtained by using near damage threshold energy. Grooves with diffraction limited sub-micrometer width were obtained with widths of 620 nm on Cr thin film and 800 nm on a soda-lime glass substrate. The machined patterns were investigated through SEM images. We also phenomenologically examined the influence of variations of parameters and proposed the optimal process conditions for microfabrication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.874-877
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• 2001

SOI(Silicon-On-Insulator) technology is proposed as an alternative to bulk silicon for MEMS(Micro Electro Mechanical System) manufacturing. In this paper, we fabricated the SOI wafer with uniform active layer thickness by silicon direct bonding and mechanical polishing processes. Specially-designed electrostatic bonding system is introduced which is available for vacuum packaging and silicon-glass wafer bonding for SOG(Silicon On Glass) wafer. We demonstrated thermopile sensor and RF resonator using the SOI wafer, which has the merits of simple process and uniform membrane fabrication.

• 제어로봇시스템학회:학술대회논문집
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• 1996.10b
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• pp.56-60
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• 1996

This paper presents the initial results of development of a inertial navigation grade silicon pendulous accelerometer. This effort focused on developing a bulk-micromachined silicon pendulum and designing a PI-servo controller. Performance data presented in this paper includes threshold, bias short term stability and nonlinearity of scale factor. This accelerometer developed is demonstrated the feasibility of meeting one-nautical-mile-per-hour accuracy.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.1547-1552
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• 2003

In this paper, we present a planar single-crystalline silicon x-axis micro-gyroscope fabricated with a perfectly aligned vertical actuation combs on one silicon wafer, using the extended SBM technology. The fabricated x-axis micro-gyroscope has the resolution of 0.1 deg/sec, the bandwidth of 100 Hz. These research results allow integrating 6 axes inertial measurement (3 accelerations and 3 angular rates) on the same silicon substrate using the same process for the first time.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.2187-2191
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• 2003

In this paper, a x/y-axis accelerometer is fabricated, using the SBM process on a <111> SOI wafer. This fabrication method solves the problem of the footing phenomenon in the conventional SOI process for improved manufacturability and performance. The roughened lower parts as well as the loose silicon fragments due to the footing phenomenon are removed by the alkaline lateral etching step of the SBM process. The fabricated accelerometer has a demodulated signal-to-noise ratio of 92 dB, when 40Hz, 5 g input acceleration is applied. The noise equivalent input acceleration resolution and bandwidth are $125.59\;{\mu}g$ and over 100 Hz, respectively. The acceleration random walk is $12.5\;{\mu}g/\sqrt{Hz}$. The output linearity is measured to be 1.2 % FSO(Full Scale Output) at 40 Hz, and the input range is over ${\pm}\;10g$.