• 한국산학기술학회논문지
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• 제15권6호
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• pp.4007-4012
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• 2014

Fumed Silica와 섬유상의 Ceramic Wool을 사용하여 경량의 무기복합재 샘플을 제조하기 위한 조건과 만들어진 샘플의 단열특성을 살펴보았다. 정량된 Fumed Silica 미세분말과 Ceramic Wool을 혼합한 반죽을 몰드에 넣고 상온에서 안정화시킨 후에 $150^{\circ}C$ 오븐에서 완전히 건조하여 샘플을 제작하였다. 소량의 PVA 계면접착제를 사용하지 않는 샘플에서는 Fumed Silica 조성비가 10-70wt% 사이에서 벌크밀도가 0.6-0.8 $g/cm^3$이었으며, 50wt% 이상의 샘플에서는 건조 수축으로 인한 크랙현상이 관찰되었다. 그러나 3wt%의 PVA를 사용한 샘플의 벌크밀도는 절반 정도로 크게 감소하면서도 기계적 특성과 단열성은 향상되었다. 만들어진 샘플들은 $800^{\circ}C$ 이상의 고온에서도 열크랙 없이 안정한 열적 특성을 보여주었으며, 샘플의 단열성은 Fumed Silica 조성비가 높아질수록 향상되는 것으로 나타났다. Fumed Silica 30wt%인 샘플의 열전도도는 $500^{\circ}C$에서 약 0.08 $W/m^{\circ}K$의 우수한 단열 특성을 보여 주었다.

• 한국재료학회지
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• 제19권4호
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• pp.220-223
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• 2009

Lithium dihydrogen phosphate ($LiH_2PO_4$) powder was purchased from Aldrich Chemical Co. From the scanning electron microscope (SEM) observation, these polycrystals have dimensions in the range of $25-250{\mu}m$. The electrical conductivity was measured at a measuring frequency of 1 kHz on heating polycrystalline lithium dihydrogen phosphate ($LiH_2PO_4$) from room temperature to 493 K. Two anomalies appeared at 451 K ($T_{p1}$) and 469 K ($T_{p2}$). The electrical conductivity reached the magnitude of the superprotonic phases: $3{\times}10^{-2}{\Omega}^{-1}cm^{-1}$ at 451 K ($T_{p1}$) and $1.2{\times}10{\Omega}^{-1}cm^{-1}$ at 469 K ($T_{p2}$). It is uncertain whether the superprotonic phase transformations are due to polymorphic transitions in the bulk, surface transitions, or chemical reactions (thermal decomposition) at the surface. Considering several previous thermal studies (differential scanning calorimetry and thermogravimetry), our experimental results seem to be related to the last case: chemical reactions (thermal decomposition) at the surface with the progressive solid-state polymerization.

• 한국결정성장학회지
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• 제20권6호
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• pp.249-253
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• 2010

A-자리 경함 perovskite $La_{1/3}NbO_3$ 단결정 시편을 제작하여 10~800 K 온도범위에서 유전특성을 조사하였다. 50 K와 650 K 부근에서 유전이상이 나타났으며, 고온영역(약 650 K)에서 유전상수의 thermal hysterisis가 크게 나타났다. 교류전도도 측정으로부터 560~690 K에서 입내 활성화 에너지는 0.43 eV로 가장 낮게 나타났다. 이들의 결과로부터 50 K 부근의 dielectric anomaly는 $Nb^{5+}$-이온의 antiparallel 변위에 기인한 것이며, 650 K 부근의 dielectric anomaly는 $La^{3+}$-이온의 재배열에 기인한 것으로 추측된다.

• Korea-Australia Rheology Journal
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• 제19권3호
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• pp.99-107
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• 2007

A nanofluid is a mixture of solid nanoparticles and a common base fluid. Nanofluids have shown great potential in improving the heat transfer properties of liquids. However, previous studies on the characteristics of nanofluids did not adequately explain the enhancement of heat transfer. This study examined the distribution of particles in a fluid and compared the mechanism for the enhancement of heat transfer in a nanofluid with that in a general microparticle suspension. A theoretical model was formulated with shear-induced particle migration, viscosity-induced particle migration, particle migration by Brownian motion, as well as the inertial migration of particles. The results of the simulation showed that there was no significant particle migration, with no change in particle concentration in the radial direction. A uniform particle concentration is very important in the heat transfer of a nanofluid. As the particle concentration and effective thermal conductivity at the wall region is lower than that of the bulk fluid, due to particle migration to the center of a microfluid, the addition of microparticles in a fluid does not affect the heat transfer properties of that fluid. However, in a nanofluid, particle migration to the center occurs quite slowly, and the particle migration flux is very small. Therefore, the effective thermal conductivity at the wall region increases with increasing addition of nanoparticles. This may be one reason why a nanofluid shows a good convective heat transfer performance.

• 한국분말재료학회지
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• 제17권2호
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• pp.107-112
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• 2010

Carbon-nanotube-embedded bismuth telluride (CNT/$Bi_2Te_3$) matrix composites were fabricated by a powder metallurgy process. Composite powders, whereby 5 vol.% of functionalized CNTs were homogeneously mixed with $Bi_2Te_3$ alloying powders, were successfully synthesized by using high-energy ball milling process. The powders were consolidated into bulk CNT/$Bi_2Te_3$ composites by spark plasma sintering process at $350^{\circ}C$ for 10 min. The fabricated composites showed the uniform mixing and homogeneous dispersion of CNTs in the $Bi_2Te_3$ matrix. Seebeck coefficient of CNT/$Bi_2Te_3$ composites reveals that the composite has n-type semiconducting characteristics with values ranging $-55\;{\mu}V/K$ to $-95\;{\mu}V/K$ with increasing temperature. Furthermore, the significant reduction in thermal conductivity has been clearly observed in the composites. The results showed that CNT addition to thermoelectric materials could be useful method to obtain high thermoelectric performance.

• 한국분말재료학회지
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• 제24권2호
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• pp.115-121
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• 2017

In this work, p-type Bi-Sb-Te alloys powders are prepared using gas atomization, a mass production powder preparation method involving rapid solidification. To study the effect of the sintering temperature on the microstructure and thermoelectric properties, gas-atomized powders are consolidated at different temperatures (623, 703, and 743 K) using spark plasma sintering. The crystal structures of the gas-atomized powders and sintered bulks are identified using an X-ray diffraction technique. Texture analysis by electron backscatter diffraction reveals that the grains are randomly oriented in the entire matrix, and no preferred orientation in any unique direction is observed. The hardness values decrease with increasing sintering temperature owing to a decrease in grain size. The conductivity increases gradually with increasing sintering temperature, whereas the Seebeck coefficient decreases owing to increases in the carrier mobility with grain size. The lowest thermal conductivity is obtained for the bulk sintered at a low temperature (603 K), mainly because of its fine-grained microstructure. A peak ZT of 1.06 is achieved for the sample sintered at 703 K owing to its moderate electrical conductivity and sustainable thermal conductivity.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.52-52
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• 2018

Only approximately 30% of fossil fuel energy is used; therefore, it is desirable to utilize the huge amounts of waste energy. Thermoelectric (TE) materials that convert heat into electrical power are a promising energy technology. The TE materials can be formed either as thin films or as bulk semiconductors. Generally, thin-film TE materials have low energy conversion rates due to their thinness compared to that in bulk. However, an advantage of a thin-film TE material is that the efficiency can be smartly engineered by controlling the nanostructure and composition. Especially nanostructured TE thin films are useful for mitigating heating problems in highly integrated microelectronic devices by accurately controlling the temperature. Hence, there is a rising interest in thin-film TE devices. These devices have been extensively investigated. It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (${\kappa}$) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (${\mu}$) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In-Zn-O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was measured to have poor ${\kappa}$ and high electrical conductivity compared to crystalline $In_2O_3:Sn$ (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in the transparent display devices.

• 전자통신동향분석
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• 제33권6호
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• pp.12-23
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• 2018

In this paper, we review the technical trends of diamond and gallium oxide ($Ga_2O_3$) semiconductor technologies among ultra-wide bandgap semiconductor technologies for harsh environments. Diamond exhibits some of the most extreme physical properties such as a wide bandgap, high breakdown field, high electron mobility, and high thermal conductivity, yet its practical use in harsh environments has been limited owing to its scarcity, expense, and small-sized substrate. In addition, the difficulty of n-type doping through ion implantation into diamond is an obstacle to the normally-off operation of transistors. $Ga_2O_3$ also has material properties such as a wide bandgap, high breakdown field, and high working temperature superior to that of silicon, gallium arsenide, gallium nitride, silicon carbide, and so on. In addition, $Ga_2O_3$ bulk crystal growth has developed dramatically. Although the bulk growth is still relatively immature, a 2-inch substrate can already be purchased, whereas 4- and 6-inch substrates are currently under development. Owing to the rapid development of $Ga_2O_3$ bulk and epitaxy growth, device results have quickly followed. We look briefly into diamond and $Ga_2O_3$ semiconductor devices and epitaxy results that can be applied to harsh environments.

• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 2004년도 봄 학술발표회 논문집
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• pp.127-134
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• 2004

In this paper, using an adjoint variable method, we develop a design sensitivity analysis (DSA) method applicable to heat conduction problems in steady state. Also, a topology design optimization method is developed using the developed DSA method. Design sensitivity expressions with respect to the thermal conductivity are derived. Since the already factorized system matrix is utilized to obtain the adjoint solution, the cost for the sensitivity computation is trivial. For the topology design optimization, the design variables are parameterized into normalized bulk material densities. The objective function and constraint are the thermal compliance of structures and allowable material volume, respectively. Through several numerical examples, the developed DSA method is verified to yield very accurate sensitivity results compared with finite difference ones, requiring less than 0.3% of CPU time far the finite differencing. Also, the topology optimization yields physical meaningful results.

• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 2005년도 춘계 학술발표회 논문집
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• pp.327-334
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• 2005

In this paper, using an adjoint variable method, we develop a design sensitivity analysis (DSA) method applicable to 3-Dimensional heat conduction problems in steady state. Also, a topology design optimization method is developed using the developed DSA method. Design sensitivity expressions with respect to the thermal conductivity are derived. Since the already factorized system matrix is utilized to obtain the adjoint solution, the cost for the sensitivity computation is trivial. For the topology design optimization, the design variables are parameterized into normalized bulk material densities. The objective function and constraint are the thermal compliance of structures and allowable material volume, respectively, Through several numerical examples, the developed DSA method is verified to yield efficiency and accurate sensitivity results compared with finite difference ones. Also, the topology optimization yields physical meaningful results.