• 한국세라믹학회지
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• 제42권2호
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• pp.104-109
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• 2005

PbO 완충층의 역할을 확인하기 위해, r.f. magnetron sputtering법을 이용하여 p-type (100) Si 기판 위에 $Pt/Pb_{1.1}Zr_{0.53}Ti_{0.47}O_{3}$와 PbO target으로 Pt/PZT/PbO/Si의 MFIS 구조를 제조하였다. MFIS 구조에 완충층으로 PbO를 삽입함으로써 PZT 박막의 결정성이 크게 향상되었고, 박막의 공정온도도 상당히 낮출 수 있었다. 그리고 XPS depth profile 분석 결과, PbO 증착시 기판온도가 PbO와 Si의 계면에서 Pb의 확산에 미치는 영향을 확인하였다. PbO 완충층을 삽입한 MFIS는 높은 메모리 윈도우와 낮은 누설전류 밀도를 가지는 추수한 전기적 특성을 나타내었다. 특히, 기판온도 $300^{\circ}C$에서 증착된 PbO를 삽입한 Pt/PZT(200nm, $400^{\circ}C)PbO(80nm)/Si$는 9V의 인가전압에서 2.OV의 가장 높은 메모리 윈도우 값을 나타내었다.

• 공업화학
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• 제34권2호
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• pp.161-169
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• 2023

본 연구는 allbanggae starch (ABS), polyvinyl alcohol (PVA), alginic acid (SA)를 이용하여 naproxen (NP) 각인 starch 기반 다층 바이오소재를 제조하고, 물리화학적 특성과 약물 방출 제어 효과를 조사하였다. 또한, FE-SEM과 FT-IR 분석에 의해 제조한 다층 바이오소재의 특성을 조사하였다. 약물 방출 제어 효과와 경피 약물 전달 시스템의 적용 가능성을 확인하기 위해 NP 각인 다층 바이오소재로부터 NP 방출 특성을 사람의 체온인 36.5 ℃에서 다양한 pH buffer solution과 인공 피부를 이용하여 확인하였다. NP는 낮은 pH보다 높은 pH에서 1.3배 더 빠른 방출을 나타냈고, single-layer 바이오소재에서보다 multi-layer 바이오소재에서 약 4.0배 느린 방출이 일어남을 확인하였다. 인공 피부 방출에서도 동일하게 single-layer 바이오소재보다 multi-layer 바이오소재에서 약 4.0배 더 느린 약물 방출 결과를 나타내었다. 또한, double-layer와 triple-layer 바이오소재 모두 12시간 동안 지속적으로 NP가 방출되었음을 확인 하였다. NP 방출 mechanism을 규명하기 위해 수학적 모델링에 적용하여 비교했을 때, pH buffer solution에서의 방출은 Fickian diffusion mechanism, 인공 피부 방출은 empirical mechanism에 적합한 것을 확인하였다.

• Current Photovoltaic Research
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• 제3권2호
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

• 한국전기전자재료학회논문지
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• 제30권10호
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• pp.625-630
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• 2017

ZnS was chemically deposited as a buffer layer alternative to CdS, for use as a Cd-free buffer layer in $Cu(In_{1-x}Ga_x)Se_2$ (CIGS) solar cells. The deposition of a thin film of ZnS was carried out by chemical bath deposition, following which the structural and optical properties of the ZnS layer were studied. For the experiments, zinc sulfate hepta-hydrate ($ZnSO_4{\cdot}7H_2O$), thiourea ($SC(NH_2)_2$), and ammonia ($NH_4OH$) were used as the reacting agents. The mole concentrations of $ZnSO_4$ and $SC(NH_2)_2$ were fixed at 0.03 M and 0.8 M, respectively, while that of ammonia, which acts as a complexing agent, was varied from 0.3 M to 3.5 M. By varying the mole concentration of ammonia, optimal values for parameters like optical transmission, deposition rate, and surface morphology were determined. For the fixed mole concentrations of $0.03M\;ZnSO_4{\cdot}7H_2O$ and $0.8M\;SC(NH_2)_2$, it was established that 3.0 M of ammonia could provide optimal values of the deposition rate (5.5 nm/min), average optical transmittance (81%), and energy band gap (3.81 eV), rendering the chemically deposited ZnS suitable for use as a Cd-free buffer layer in CIGS solar cells.

• 한국재료학회지
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• 제27권12호
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• pp.699-704
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• 2017

Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after $N_2$ plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, $N_2$ plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with $N_2$ plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from $Al_2O_3$ to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface $N_2$ plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.

• 한국초전도ㆍ저온공학회논문지
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• 제13권1호
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• pp.1-5
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• 2011

[ $CeO_2$ ]has been widely used for single buffer layer of coated conductor because of superior chemical and structural compatibility with $ReBa_2Cu_3O_{7-{\delta}}$(Re=Y, Nd, Sm, Gd, Dy, Ho, etc.). But, the surface of $CeO_2$ layer showed cracks because of the large difference in thermal expansion coefficient between metal substrate and deposited $CeO_2$ layer, when thickness of $CeO_2$ layer exceeds 100 nm on the biaxially textured Ni-3%W substrate. The deposition rate has been limited to be less than 6 $\AA$/sec in order to get a good epitaxy. In this research, we deposited $CeO_2$ single buffer layers on biaxially textured Ni-3%W substrate with 2-step process such as thin nucleation layer(>10 nm) with low deposition rate(3 $\AA$/sec) and thick homo epitaxial layer(>240 nm) with high deposition rate(30 $\AA$/sec). Effect of deposition temperature on degree of texture development was tested. Thick homo epitaxial $CeO_2$ layer with good texture without crack was obtained at $600^{\circ}C$, which has ${\Delta}{\phi}$ value of $6.2^{\circ}$, ${\Delta}{\omega}$ value of $4.3^{\circ}$ and average surface roughness(Ra) of 7.2 nm within $10{\mu}m{\times}10{\mu}m$ area. This result shows the possibility of preparing advanced Ni substrate with simplified architecture of single $CeO_2$ layer for low cost coated conductor.

• 한국자기학회지
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• 제14권5호
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• pp.192-195
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• 2004

본 연구는 [Pd(0.8 nm)/Co(0.8 nm)]$_{5}$FeMn(15 nm)구조의 다층박막을 dc마그네트론 스퍼터링 시스템을 이용하여 교환결합된 수직자기이방성에 대한 자기적 특성을 조사하였다. [Pd/Co]다층막과 FeMn 층 사이에 Pd층을 얇게 삽입함으로서 교환바이어스 세기(exchange biasing field : H$_{ex}$)가 127 Oe에서 145 Oe로 개선된 길과를 얻었다. 하지만 열적안정성 실험 결과 삽입층이 삽입 된 경우 삽입되지 않은 경우 보다 약 5$0^{\circ}C$낮은 20$0^{\circ}C$ 에서부터 감소하는 결과를 얻었다. 바닥층 물질에 따른 H$_{ex}$와 보자력 (coercivity : H$_{c}$)의 변화를 조사한 결과, H$_{ex}$는 바닥층이 Ta그리고 Pd인 경우, 각각 최대 127Oe, 169Oe를 얻었다. 반면, H$_{c}$는 바닥층이 Ta그리고 Pd층인 경우, 각각 최대 203 Oe, 453 Oe를 얻었다.

• 전자공학회논문지D
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• 제34D권8호
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• pp.80-86
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• 1997

H:LiNbO$_{3}$ optical modulator buffered by parylene layer, which has a merits in the bandwidth, power consumption and fabrication as compared with conventional SiO$_{2}$ buffered optical modulator, is proposed and analyzed. The dependences of velocity matching condition, charcteristics impedance, and driving voltage on dielectric constants, thickness of buffer layer, and electrode configurations are demonstrated with finite element calculation. And we performed the physical and chemical test of parylene buffer layer deposited on LiNbO$_{3}$ and under Au electrodes.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.162-163
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• 2013

Single-crystal InGaZnO (IGZO) thin films were spontaneously formed as periodic layered structure along the c-axis by thermal treatment at high temperature. when the IGZO superlattice were synthesized by sol-gel method, the effects of preferred growth orientations and the flatness of ZnO buffer layer were investigated. $InGaO_3(ZnO)_2$ superlattice were favorably formed on ZnO buffer layer with single preferred orientation. Futhermore, it showed relatively high Seebeck coefficient and power factor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.4-4
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• 2010

Single-crystalline IGZO (Indium-Gallium-Zinc oxide) was fabricated on c-sapphire substrate. Single crystal ZnO was used as a buffer layer, and post-annealing was treated in $900^{\circ}C$ for crystallization of IGZO. Crystallized IGZO formed superlattice structure spontaneously induced to c-axis direction by ZnO butTer layer, the composition of IGZO was varied by amount of ZnO. Crystallinity and composition of IGZO was analyzed by X-ray Diffraction and Transmission Electron Microscopy.