• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.191-194
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• 1999

The balanced amplifier is a practical amplifier to, implement a broadband amplifier that has flat gain and good input and output VSWR. Three-stage amplifier design procedure usually divided into three partition satisfying the following requirements : low noise figure, high gain and high power output. FHX35LG HEMT device is used in the design can be obtained low noise figure at the first-stage, MGA82563 MMIC device is used in the design can be maintained high gain at the second-stage, and AHI MMIC device is used in the design can be required high power output at the third-stage. The results of three-stage balanced amplifier show that power gain is about 40㏈, noise figure is less than 1.2㏈ at operating frequency.

• 한국ITS학회 논문지
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• 제5권1호
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• pp.13-19
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• 2006

본 논문에서는 7 - 11 GHz 대역에서 동작하는 광대역 Microwave Power Module (MPM)을 설계하고 제작하였다. MPM 은 TWT (Traveling Wave Tube)와 SSA (Solid State Amplifier)로 구성되며, TWT와 SSA의 이득을 최적으로 배분하여 잡음지수를 줄일 수 있도록 설계하였다. Agilent사의 ADS (Advanced Design System)을 이용하여 SSA의 컴퓨터 모델링과 시뮬레이션을 수행 하였으며, 직렬 분포형 증폭기 구조를 이용하여 설계 및 제작하였다. 제작된 광대역 MPM은 7 - 11 GHz 대역에서 8.3 - 10.02 dB의 잡음 지수, 9 GHz에서 38.12 dBm의 출력 전력이 측정되었다.

• ETRI Journal
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• 제27권3호
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• pp.334-336
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• 2005

We improved the performance of the spectrum-sliced light source for wavelength-division-multiplexed passive optical networks by employing a Fabry-Perot laser diode(FP-LD). We found that the FP-LDs can suppress the intensity noise as significantly as using a gain-saturated semiconductor optical amplifier. The transmission characteristics were measured and analyzed in both conditions with and without employing an FP-LD.

• Journal of electromagnetic engineering and science
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• 제5권3호
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• pp.112-116
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• 2005

This paper presents a broadband two-stage low noise amplifier(LNA) operating from 3 to 10 GHz, designed with 0.18 ${\mu}m$ RF CMOS technology, The cascode feedback topology and broadband matching technique are used to achieve broadband performance and input/output matching characteristics. The proposed UWB LNA results in the low noise figure(NF) of 3.4 dB, input/output return loss($S_{11}/S_{22}$) of lower than -10 dB, and power gain of 14.5 dB with gain flatness of $\pm$1 -dB within the required bandwidth. The input-referred third-order intercept point($IIP_3$) and the input-referred 1-dB compression point($P_{ldB}$) are -7 dBm and -17 dBm, respectively.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2000년도 종합학술발표회 논문집 Vol.10 No.1
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• pp.197-201
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• 2000

In this paper, a MMIC(Monolithic Microwave Integrated Circuit) broadband drive amplifier for wireless communication system has designed using active feedback method. The MMIC brodband amplifier was designed using 0.5$\mu\textrm{m}$ MESFET of ETRI library. Simulation results show that gain is 22 dB, and gain flatness ${\pm}$1 dB. Maximum output power 15 dBm and noise figure 2.5 dB in bandwidth 500 MHz ～3.0 GHz. The MMIC Broadband amplifer's chip area is 14mm${\times}$1.4mm.

• Journal of electromagnetic engineering and science
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• 제16권1호
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• pp.52-56
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• 2016

This paper suggests a class-F power amplifier with split open-end stubs to provide a broadband high-efficiency operation. These stubs are designed to have wide bandwidth by splitting wide open-end stubs into narrower stubs connected in shunt in an output matching network for class-F operation. In contrast to conventional wideband class-F designs, which theoretically need a large number of matching lines, this method requires fewer transmission lines, resulting in a compact circuit implementation. In addition, the open-end stubs are designed with slant ends to achieve additional wide bandwidth. To verify the suggested design, a 10-W class-F power amplifier operating at 1.7 GHz was implemented using a commercial GaN transistor. The measurement results showed a peak drain efficiency of 82.1% and 750 MHz of bandwidth for an efficiency higher than 63%. Additionally, the maximum output power was 14.45 W at 1.7 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권1호
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• pp.42-46
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• 2003

In this paper, an MMIC broadband amplifier for wireless communication systems has been developed by using an active feedback method. This active feedback operates at much higher frequencies than a method by a spiral inductor feedback and its size is independent of the inductance value. The MMIC broadband amplifier was designed using a $0.5{\;}{\mutextrm{m}}$ MESFET library. The fabricated chip area was $1.4{\;}mm{\;}{\times}{\;}1.4{\;}mm. Measurement showed a gain of 18 dB with a gain flatness of ${\pm}3$ dB in a 1.5 GHz~3.5 GHz band. The maximum output power and the minimum noise figure were 14 dBm and 2.5 dB in the same band, respectively.

• Journal of electromagnetic engineering and science
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• 제16권3호
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• pp.143-149
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• 2016

This work presents a method used for designing a broadband class-E power amplifier that combines the two techniques of a nonlinear shunt capacitance and a low quality factor of a series resonator. The nonlinear shunt capacitance theory accurately extracts the value of class-E components. In addition, the quality factor of the series resonator was considered to obtain a wide bandwidth for the power amplifiers. The purpose of using this method was to produce a simple topology and a high efficiency, which are two outstanding features of a class-E power amplifier. The experimental results show that a design was created using from a 130 to 180 MHz frequency with a bandwidth of 32% and a peak measured power added efficiency of 84.8%. This prototype uses an MRF282SR1 MOSFET transistor at a 3-W output power level. Furthermore, a summary of the experimental results compared with other high-efficiency articles is provided to validate the advantages of this method.

• Journal of the Optical Society of Korea
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• 제13권3호
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• pp.316-320
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• 2009

A novel broadband wavelength-swept Raman laser was used to implement Fourier-domain mode locked (FDML) swept-source optical coherence tomography (SS-OCT). Instead of a conventional semiconductor optical amplifier, this study used broadband optical fiber Raman amplification, over 50 nm centered around 1545 nm, using a multi-wavelength optical pumping scheme, which was implemented with the four laser diodes at the center wavelengths of 1425, 1435, 1455 and 1465 nm, respectively, and the maximum operating power of 150 mW each. The operating swept frequency of the laser was determined to 16.7 kHz from the FDML condition of 12 km optical fiber in the ring cavity. The OCT images were obtained using the novel broadband wavelengthswept Raman laser source.

• 한국통신학회논문지
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• 제15권1호
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• pp.51-57
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• 1990

입, 출력 정합단에 타원여파기와 보조회로를 첨가하여 광대역증폭기의 마이크로파 집적회로(MIC)를 설계한다. 이 증폭기를 해석하기 위하여 GaAS MESFET의 입, 출력회로를 단방향성 등가회로로 변환한다. 입,출력 임피던스는 타원여파기로 정합하여 집적회로화 한다. 실험결과는 4~8GHz의 주파수내역에서 이득 10.5dB, 최대 정재파비 2.1:1 및 최대 잡음지수 2.5dB의 특성을 보인다.